Overview >> Heteroepitaxy - Integration of functional semiconductor layers on the Si technology platform
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The Objective
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The integration of new functional semiconductor layers on the Si technology platform via heteroepitaxy is in the focus of the project to increase the performance and / or functionality of Silicon-based integrated circuits by future “system-on-chip (SoC)” solutions. Special emphasize is devoted to the fundamental solid state physics of heteroepitaxy processes. more
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IHP’s Contribution
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The IHP materials research department is a key player in the field of solid state physics research on the integration of functional semiconductor layers via lattice matched oxide heterostructures on Si substrates. The use of European 3rd generation Synchrotron radiation facilities is a key competence to perform state-of-the-art nanoscience studies.
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Funding
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The project is funded by DFG, SILTRONIC, ESRF, BESSY II & HASYLAB.
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Project Partners
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University of Bremen (Germany), University of Osnabrueck (Germany), Technical University of Dresden (Germany), Max-Planck Institute of Metal Physics Stuttgart (Germany), Brandenburg Technical University of Cottbus (Germany).
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