IV   The IHP Project: Global and Local Integration via Buffer Heterostructures

The IHP project focuses on the integration of functional semiconductor layers on the Si material platform via oxide buffer layers by heteroepitaxy [10]. In the following, film deposition and materials science characterization techniques are briefly discussed:

1)   Film Deposition Techniques at IHP Materials Research Department

To pave the way from basic research studies to the level of prototypes in a cost-effective way, the following combination of film deposition techniques is applied at IHP:

a)   Molecular Beam Epitaxy (MBE): “Proof of Principle”

	Fig. 6: Three 4” chamber MBE facility at IHP Materials Research Department.

A 4” MBE system is installed at IHP Materials Research department. It is composed of separated oxide, SiGe and III-V chambers with a number of in-situ characterization tools (various RHEED systems, XPS & UPS). As MBE is a highly flexible research thin film deposition method, it is widely employed in the current project for “proof of principle” studies of innovative materials science approaches. In the course of these studies, special emphasize is devoted to develop a fundamental understanding of the solid state physics of heteroepitaxy processes. A DFG research project recently started to strengthen these basic research activities.

b)   Chemical Vapour Deposition Techniques CVD): “Prototyping”

As MBE is not mass production compatible in terms of Si-based microelectronics industry, prototype development requires the use of chemical vapour deposition thin film deposition techniques. The difficult task of CVD heteroepitaxy is only tackled for materials system which successfully passed the MBE based “proof of principle” – study before. For the purpose of prototyping, an 8” Aixtron Tricent AVD cluster tool is installed in the IHP cleanroom. It is composed of an oxide chamber, a semiconductor tool and a metallization module. Certainly, the location in IHP cleanroom sets up a favorable environment suitable for the local integration of hybrid devices in IHP 0.13 µm BiCMOS technology.

Fig. 7: 8” Aixtron Tricent AVD facility at IHP cleanroom.

2)   Film Characterization Techniques at IHP Materials Research Department

A wide range of film characterization techniques is employed by IHP materials scientist in the Heteroepitaxy project. This can be divided into laboratory – based equipment and 3^rd generation Synchrotron radiation facilites:

a)   Laboratory based equipment at IHP - Microelectronics

The laboratory based techniques cover materials science as well as electric characterization techniques. An overview of the technical infrastructure is available in the Internet under the link “Technical Basis” of the IHP Materials Research Department. Of special importance for a detailed structure characterization of the prepared heterostructures is the recently purchased Smart Lab diffractometer from Rigaku. Fig. 8 shows an image of the highly flexible diffractometer set-up which offers suitable geometries for carrying out a wide range of X-ray diffraction studies (Grazing Incidence X-ray diffraction mode, pole figure studies etc).

Fig. 8: Smart Lab diffractometer (Rigaku) for X-ray diffraction studies at IHP.

	Fig. 9: European Synchrotron Radiation Facility (ESRF) in Grenoble (France).

b)   3^rd Generation Synchrotron Radiation Facilities in Europe

A core competence of IHP materials scientist in the “Heteroepitaxy project” is the use of 3^rd generation Synchrotron radiation (SR) facilities. Due to the brilliance of SR beams, materials science studies at SR facilities provide unprecedented insights in materials on the nano-scale. Our colleagues regularly embark to Berlin`s Synchrotron “Bessy II” for photoelectron spectroscopy studies and to the Hamburg Synchrotron laboratory “Hasylab” as well as the “European Synchrotron Radiation Facility (ESRF)” in Grenoble for X-ray diffraction experiments. Fig. 9 shows an image of the impressive ESRF storage ring, operated at 6 GeV to provide users with highly brilliant and extremely coherent hard X-ray beams for high-resolution diffraction experiments.

Students and scientists who feel attracted by doing R & D work in our group on the integration of functional semiconductors on the Si material platform via heteroepitaxy are welcome to contact us for PhD, PostDoc as well as Guest Scientist stays at IHP-Microelectronic in Frankfurt (Oder), Germany.

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