References

[1] Rainer Waser, Nanoelectronics and Information Technology – Advanced Electronic Materials and Novel Devices 2^nd Edition, Wiley VCH, 2005.

[2] Takashi Hori, Gate Dielectrics and MOS ULSI – Principles, Technologies and Applications, Springer Series in Electronics and Photonics Volume 34,

     edited by I.P. Kaminow, W. Engl and T. Sugano, 1996.

[3] H.R. Huff and D.C. Gilmer, High Dielectric Constant Materials – VLSI MOSFET Applications, Springer Series in Advanced Microelectronics Vol. 16,

     2005.

[4] J.D. Cressler (Editor), Silicon Heterostructure Handbook, Taylor & Francis, 2006.

[5] Eugene A. Fitzgerald, Mat. Sci. Eng. B Vol. 124-125, p. 8 (2005)

[6] S. Cristoloveanu, and S.S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices, Kluwer Academic Publishers, 1995.

[7] G.K. Celler, S. Cristoloveanu, J. Appl. Phys. Vol. 93, p. 4955 (2003).

[8] G. Roelkens, J. v. Campenhout, J. Brouckaert, D. van Thourhout, R. Baets, P. Rojo Romeo, P. Regreny, A. Kazmierczak, C. Seassel, X. Letartre,

      G. Hollinger, J.M. Fedeli, L.D. Cioccio, & C. Lagahe-Blanchard, Materials Today, Vol. 10, p. 37 (2007).

[9] K. Benkendorfer, E. Menard, and J. Carr, Compound Semiconductor, Vol. 13, p. 16 (2007).

[10] Relva C. Buchanan, Ceramic Materials for Electronics, Marcel Dekker, 2004.

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