IHP - Innovations for High Performance Microelectronics: 0.25 µm SiGe:C BiCMOS

Multiproject Wafer (MPW) and Prototyping Service

IHP offers research partners and customers access to its powerful 0.25 µm SiGe BiCMOS technologies.

The technologies are especially suited for applications in the higher GHz bands (e.g. for wireless, broadband, radar). They provide integrated HBTs with cut-off frequencies of up to 220 GHz and integrated RF LDMOS devices with breakdown voltages of up to 33 V, including complementary devices.

The Following four technologies are available:

SG25H1:	A high-performance technology with npn-HBTs up to f_T/f_max= 180/220 GHz.
SG25H2:	A complementary high-performance technology with npn-HBTs similar to SG25H1 and additional pnp-HBTs with f_T/f_max= 90/120 GHz.
SG25H3:	A technology with a set of npn-HBTs, ranging from a high RF performance (f_T/f_max= 110 GHz/180 GHz) to higher breakdown voltages up to 7 V.
SGB25VD:	A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V. A distinctive feature of this technology is additional integrated complementary RF LDMOS devices with breakdown voltages up to 33 V.

From 2008 IHP will offer access to its next generation 0.13 µm BiCMOS technology. This technology will include integrated HBTs with cut-off frequencies of up to 300 GHz.

The schedule for MPW & Prototyping runs is available.

A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP’s reusable blocks and IPs for wireless and broadband are offered to support designs.

Technical key-parameters of the technologies offered for
MPW & Prototyping are:

1. High-Performance 0.25 µm SiGe BiCMOS (SG25H1)

Parameter	npn1	npn2
Bipolar Section
A_E	0.21 x 0.84 µm²	0.18 x 0.84 µm²
Peak f_max	190 GHz	220 GHz
Peak f_T	190 GHz	180 GHz
BV_CE0	1.9 V	1.9 V
BV_CB0	4.5 V	4.5 V
V_A	40 V	40 V
ß	200	200

2. Complementary High-Performance 0.25 µm SiGe BiCMOS (SG25H2)

Parameter	npn	pnp
Bipolar Section
A_E	0.21 x 0.84 µm²
Peak f_max	170 GHz	120 GHz
Peak f_T	170 GHz	90 GHz
BV_CE0	1.9 V	-2.5 V
BV_CB0	4.5 V	-4.0 V
V_A	40 V	30 V
ß	160	100

3. 0.25 µm SiGe BiCMOS with a set of npn-HBTs, ranging from high RF performance to

high breakdown voltages (SG25H3)

Parameter	High Performance 1	High Performance 2	Medium Voltage	High Voltage
Bipolar Section
A_E	0.22 x 0.84 µm²	0.42 x 0.84 µm²	0.22 x 2.24 µm²	0.22 x 2.24 µm²
Peak f_max	180 GHz	140 GHz	140 GHz	80 GHz
Peak f_T	110 GHz	120 GHz	45 GHz	30 GHz
BV_CE0	2.3 V	2.3 V	5 V	>7 V
BV_CB0	6.0 V	6.0 V	15.5 V	21.0 V
V_A	30 V
ß	150

4. 0.25 µm SiGe BiCMOS with High-Voltage Devices (SGB25VD)

Parameter	High Performance	Standard	High Voltage
Bipolar Section
A_E	0.42 x 0.84 µm²
Peak f_max	95 GHz	90 GHz	70 GHz
Peak f_T	75 GHz	45 GHz	25 GHz
BV_CE0	2.4 V	4.0 V	7.0 V
BV_CB0	>7 V	>15 V	>20 V
V_A	>50 V	>80 V	>100 V
ß	190

LDMOS Section
	n-LDMOS			p-LDMOS
	n-LDMOS 23	n-LDMOS 13	n-LDMOS I10****	p-LDMOS 8	p-LDMOS12
BV_DSS*	26 V	15 V	11.5 V	-10 V	-13.5 V
I_Dsat**	140 µA/µm (V_GS = 1.5 V)	140 µA/µm (V_GS = 1.5 V)	175 µA/µm (V_GS = 1.5 V)	85 µA/µm (V_GS = -1.5 V)	90 µA/µm (V_GS = -1.5 V)
I_leakage	< 15 pA/µm (V_DS= 20 V)	< 15 pA/µm (V_DS= 10 V)	< 15 pA/µm (V_DS = 8V)	< 50 pA/µm (V_DS= -8 V)	< 50 pA/µm (V_DS= -8 V)
R_ON	11 Ωmm	7 Ωmm	7.5 Ωmm	16 Ωmm	11.5 Ωmm
Peak f_max***	40 GHz	43 GHz	46 GHz	25 GHz	22 GHz
Peak f_T***	19 GHz	23 GHz	21 GHz	11 GHz	11 GHz
* : @100 pA/µm, : @ V_DS= 5 V , * : @ V_DS= 4 V, **** : substrate isolated
An additional n-LDMOS with BV_DSS of 33 V is available.

CMOS and Passives of 0.25 µm Technologies

Parameter	SG25H1 - H3	SGB25VD
CMOS Section (0.25 µm)
Core Supply Voltage	2.5 V
nMOS V_th	0.6 V
nMOS I_Dsat	540 µA/µm	570 µA/µm
nMOS I_off	3 pA/µm
pMOS V_th	-0.56 V	-0.51 V
pMOS I_Dsat	230 µA/µm	290 µA/µm
pMOS I_off	3 pA/µm
Passives
MIM Capacitor	1 fF/µm²
N⁺ Poly Resistor	210 Ω/⁯
P⁺ Poly Resistor	280 Ω/⁯	310 Ω/⁯
High Poly Resistor	1600 Ω/⁯	2000 Ω/⁯
Varactor C_max/C_min	3
Inductor Q@2.4 GHz	12 (1 nH), 6 (15 nH)
Inductor Q@5.8 GHz	16 (1 nH), 10 (2 nH)

5. An Additional 0.13 µm BiCMOS With the Following Scheduled Parameters Will be

Available From 2008

Parameter	npn13P	npn13V
Bipolar Section
A_E	0.12 x 0.48 µm²	0.12 x 0.48 µm²
Peak f_max	300 GHz	120 GHz
Peak f_T	250 GHz	45 GHz
BV_CE0	1.7 V	4 V
BV_CB0	5.5 V	16 V
ß	500	450

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