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Results
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Since 2000 we have successfully qualified a 0.25µm CMOS technology, the 0.25µm BiCMOS technology family SGC25A, B, C, the 0.25µm BiCMOS technology with high-voltage devices SGB25VD, and the new generation of 0.25µm BiCMOS technologies (SG25H1, H3). Typically, we divide our qualification activities into device stress tests for complex CMOS and bipolar structures and a series of intrinsic reliability tests. Qualification vehicles for the SG25H1 technology included a 1 Mbit SRAM (CMOS part) and a special designed bipolar test chip with ring oscillators and transistor arrays of different size. Typical device stress tests are: high temperature operation life test, temperature storage, temperature cycling, and pressure cooker tests. Intrinsic reliability tests are related to electromigration and stressmigration, time dependent dielectric breakdown, hot carrier injection, bipolar transistor tests with forward and reverse current stress, LDMOS and MIM capacitor characterization.
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