Price List IHP Shuttle Services 2008

General Technology Description

SG25 is the basic 0.25μm CMOS process. It provides Nmos, Pmos, isolated Nmos and passive components such as poly resistors and MIM capacitors. In addition to the basic CMOS process 3 frontend options and 2 aluminum backend options are offered.

The standard backend option offers 3 thin metal layers and a TopMetal1 layer (fourth 2μm thick metal layer) and a MIM layer. Together with a high dielectric stack this enables increased RF passive component performance.

SG25H1 technology is a high performance BiCMOS technology. The bipolar module H1 is based on SiGe:C npn-HBTs with up to 190GHz transient frequencies and up to 220GHz oscillation frequencies.

SG25H2 technology is a high-performance complementary BiCMOS technology. The bipolar module H2 is based on high-performance SiGe:C npn-HBTs with similar performance as H1. Additionally, high-performance SiGe:C pnp-HBT with up to 90GHz transient frequencies and 120GHz oscillation frequencies are offered.

SG25H3 technology is a BiCMOS technology, too. The bipolar module H3 based on SiGe:C npn-HBT with up to 120GHz transient frequencies and up to 180GHz oscillation frequencies. Additionally, SiGe:C npn-HBTs with breakdown voltages (BVCE0) up to 7V are offered.

SGB25V is a 19-mask BiCMOS process which combines a 0.25μm CMOS core with 3 types of SiGe:C HBTs. The process offers a 4-layer Al-BEOL, including a MIM capacitor and a TopMeta1 leayer (2μm thick).

SGB25VD adds, by 2 mask steps, a complementary LDMOS module to the SGB25V process (nLDMOS up to 26V, pLDMOS up to 12V breakdown voltage).

SG13B technology has highest bipolar performance with up to 250GHz transient frequencies and up to 300GHz oscillation frequencies. The process offers a 4-layer Al-BEOL, including a MIM capacitor and a TopMetal1 layer (2μm thick). Thin metal layer are based on 130nm design rules. Additional CMOS devices with gate length bigger 0.3μm are available. The technology is compatible with a 130nm technology under development

at IHP.

Thick TopMetal2 module:

Optional an additional TopMetal2 (5th thick metal layer) is available for better performance of passive components such as inductors and transmission lines.

Price information 2008

¹ Available for SG25H1 / H2 / H3, SGB25V /VD, and SG13B technology.

Non Commercial Access

For non profit and educational institutions a discount of 25 % is offered via Europractice ( www.iis.fraunhofer.de/svasic/ep or www.europractice.imec.be ) and there is no minimum size requirement for all runs marked with x only.

MPW Schedule 2008

¹ Additional Run if customer request is more than 10mm² for this TAPE IN

² Early access run offered to selected customers

* Shipment 4 days later, ** Shipment 10 days later

A TopMetal2 option (3μm thick) is available for SG25H1 / H2 / H3, SGB25V /VD, and SG13B which takes 5 days longer until shipment

Information on Minimum Size per MPW Run

¹ CMOS without RF modules for testing digital parts

Offered in runs with SG25H1, SG25H2 and SG25H3

² Ask for special price if you need more than this area for one MPW run

Delivery

40 diced samples, E-test data including RF measurements. Thinning of samples between 300 µm and 370 µm.

Hot lots and additional dies are available upon request.

Engineering Runs

An engineering run consists of a separate mask set and the delivery of six wafers. Additional wafers are available upon request.

Volume Runs

A volume run consists of a separate mask set with reduced engineering costs and minimum wafer order. For detailed information contact IHP.

IHP's General Terms and Conditions apply.

For further information please contact:

Dr. Rene Scholz

IHP GmbH

Im Technologiepark 25

15236 Frankfurt (Oder)

Germany

Phone: +49 335 5625 647

Fax: +49 335 5625 327

Email: scholz@ihp-microelectronics.com