IHP presentations worldwide
since January 2004
IEDM 2004, San Francisco, Dec. 12-15, 2004, USA
A Low-Parasitic Collector Construction for High-Speed SiGe:C HBTs
B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, T. Grabolla, U. Haak, W. Höppner, D. Knoll, B. Kuck, R. Kurps, K. Köpke, S. Marschmeyer, H.H. Richter, H. Rücker, P. Schley, D. Schmidt, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto
Integration of High-Performance SiGe:C HBTs with Thin-Film SOI CMOS
H. Rücker, B. Heinemann, R. Barth, D. Bolze, J. Drews, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, S. Marschmeyer, N. Mohapatra, H.H. Richter, P. Schley, D. Schmidt, B. Tillack, G. Weidner, D. Wolansky, H.-E. Wulf, Y. Yamamoto
IEEE Norchip 2004, Oslo, Nov. 8-9, 2004, Norway
A 1 GHz AGC Amplifier in BiCMOS with 3µm Settling-Time for 802.11a WLAN
K. Schmalz
Tag der Wissenschaft an der Europa-Universität Frankfurt (Oder), Nov. 10, 2004, Germany
Mikroelektronik - der großen Schritt in kleinste Welten (invited)
W. Mehr
Compound Semiconductor IC Symposium, Monterey, Oct. 23-28, 2004, USA
Advances in SiGe HBT Technology in Europe (invited)
H. Rücker, W. Winkler
Deutscher MBE-Workshop, Braunschweig, Oct. 12, 2004, Germany
Properties of Pr-silicate High-K Dielectrics Formed by Solid State Reaction Between Pr and SiO2
G. Lupina
European Gallium Arsenide and other Compound Semiconductors Application Symposium 2004, Amsterdam, Oct. 11-12, 2004, Netherlands
Application of SiGe:C BiCMOS to Wireless and Radar (invited)
W. Winkler, B. Heinemann, D. Knoll
Fraunhofer Institut für Photonische Mikrosysteme, Dresden, Oct. 7, 2004, Germany
Si-basierte Lichtemitter für die On-chip-Datenübertragung (invited)
M. Kittler
SiGe: Materials, Processing and Devices: The 1st International Symposium, Honolulu, Oct. 03-08, 2004, Hawaii
Complementary SiGe BiCMOS (invited)
B. Heinemann, J. Drews, D. Knoll, R. Kurps, S. Marschmeyer, H. Rücker, W. Winkler, Y. Yamamoto
206th Meeting of the Electrochemical Society, Honolulu, Oct. 03-08, 2004, Hawaii
Deposition Conditions and Post Treatment of High-k Praseodymium and Lanthanum Oxide Dielectrics
G. Lippert, J. Dabrowski, P. Formanek, V. Melnik, R. Sorge, Ch. Wenger, P. Zaumseil, H.-J. Müssig
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband Communication, Frankfurt (Oder), September 30, 2004, Germany
SGB25VD Low Cost BiCMOS Approach
D. Knoll
Integrated RF LDMOS
K.-E. Ehwald
Flash Integration
A. Fox
High-performance HBT Modules in BiCMOS
B. Heinemann
Reliability and Process Qualification
P. Zaumseil
Design Kit and MPW Service
R.F. Scholz
Modelling and RF Characterisation
B. Senapati
High-performance RF Circuits
W. Winkler
TCP / IP Processor for Wireless
M. Methfessel
International Union of Radio Science, Landesausschuss in der Bundesrepublik Deutschland Kleinheubacher Tagung Miltenberg, Sept. 24, 2004, Germany
Analog Design Challenges in Ultrawide-Band Technology (invited)
B. Dietrich
Das Silicium-Zeitalter: Silicium für Mikroelektronik, Photvolatik und Photonik, Augustusburg, Sept. 23-25, 2004, Germany
Advances in SiGe HBT Technology in Europe
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler, W. Mehr
Nitrogen in Thin Silicon Wafers Determined by Infrared Spectroscopy
V.D. Akhmetov, O. Lysytskiy, H. Richter
Mobile Computing und Medien Kommunikation im Internet, University Ulm, Sept. 23, 2004, Germany
A Location Aware Revocation Approach
D. Kulikowski, P. Langendörfer, K. Piotrowski
ESSDERC 2004, Leuven, Sept. 21-23, 2004, Belgium
Self-Consistent Characterization of Gate Controlled Diodes for CMOS Technology Monitoring
R. Sorge, P. Schley, K.-E. Ehwald
A Two Mask Complementary LDMOS Module Integrated in a 0.25 µm SiGe:C BiCMOS Platform
K.-E. Ehwald, A. Fischer, F. Fürnhammer, W. Winkler, B. Senapati, R. Barth, D. Bolze, B. Heinemann, D. Knoll, H. Rücker, D. Schmidt, I. Shevchenko, R. Sorge, H.-E Wulf
ESSCIRC 2004 - European Solid-State Circuits Conference, Leuven, Sept. 20-23, 2004, Belgium
60 GHz Transceiver Circuits in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, F. Herzel, H. Gustat, B. Heinemann, F. Korndörfer
Lithography Workshop, Sept. 17-19, 2004, Pommelsbrunn, Germany
Determination of Optical Constants Using Swing Curves (invited)
J. Bauer, U. Haak, G. Drescher
2nd International Workshop on Discrete-Event System Design, DESDes '04, Dychow, Sept. 15-17, 2004, Poland
The System Behavioral Model of IEEE 802.15.3 Mac Protocol - Design and Profiling
J. Ryman, D. Dietterle, K. Dombrowski, P. Bubacz
14th International Conference on PATMOS 2004, Santorini, September 15-17, 2004, Greece
GALSification of IEEE 802.11a Baseband Processor
M. Krstic, E. Grass
10th Internat. Conf. on Extended Defects in Semiconductors EDS 2004, Moscow, Sept. 2004, Russia
Silicon-based Light Emission After Ion Implantation: Role of Defects and of Crystalline Perfection (invited)
M. Kittler
XTOP 2004, Prague, Sept.- 07-10, 2004, Czech Republic
A Complex X-Ray Characterization of Epitaxially Grown High-K Gate Dielectrics
P. Zaumseil, T. Schröder
EUROMICRO Symposium on Digital System Design, Rennes, Aug. 31- Sept., 03, 2004, France
Mapping of High-Level SDL Models to Efficient Implementations for TinyOS
D. Dietterle, J. Ryman, K. Dombrowski, R. Kraemer
North Eastern University, Boston, August 12, 2004, USA
PLASMA: A Location-, Privacy- and Energy-aware Middleware Platform (invited)
P. Langendörfer
4th Workshop on Applications and Services in Wireless Networks, Boston, Aug. 09-11, 2004, USA
PLASMADS: Smart Mobiles Meet Intelligent Environments
P. Langendörfer, H. Maass, T. Falck
Energy Efficient Middleware Design in Support of User Privacy (invited)
P. Langendörfer
Ecole Centrale de Lyon, Laboratory of Electronical Engineering, Lyon, July 2004, France
Modern Synchrotron Radiation Grazing Incidence Diffraction Studies: The Example of Epitaxial Pr2O3 Layers on Si(001) and Si(111) (invited)
T. Schröder, H.-J. Müssig
Gordon Conference Defects in Semiconductors New London, July 2004
Direct Evidence of Internal Schottky Barriers at NiSi2 Precipitates in Si by Electron Holography
M. Kittler
UML/Java Workshop für Embedded und Real-time Systeme, TFH Berlin, July 29, 2004, Germany
Mobile Application Patterns - Real Time or Ubiquity? (invited)
J. deMeer
Workshop Advances in Modeling and Simulation of Semiconductor Devices, Berlin, July 12-16, 2004, Germany
BiCMOS Integration of High-Speed SiGe:C HBTs (invited)
B. Heinemann, H. Rücker
University of Hannover, Institute for Semiconductor Devices and Electronic Materials, July, 08, 2004, Germany
Atomic Level Control of SiGe Epitaxy and Doping (invited)
B. Tillack
DASIA 2004, Data Systems in Aerospace, Nice, June 28-July 01, 2004, France
Remote Operations: A Middleware and Distributed Systems Architecture for Satellite On-Board Wireless Communication
R. Kraemer, K. Dombrowski, D. Dietterle, P. Langendörfer, M. Methfessel
16th International Vacuum Congress, Venice, June 28 - July 02, 2004, Italy
Dependence of Structural and Electrical Properties of Pr and La Oxides on Growth, Annealing and Storage Conditions
G. Lippert, J. Dabrowski, P. Formanek, V. Melnik, R. Sorge, Ch. Wenger, P. Zaumseil, H.-J. Müssig
Workshop of Dielectrics in Microelectronics 2004, Cork, June 28-30, 2004, Ireland
Electrical Properties of Praseodymium-Silicate Films for High-K Gate Applications
C. Wenger, J. Dabrowski, G. Lupina, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.-J. Müssig
4th ACiD-WG Workshop, Turku, June 28-29, Finland
GALS Baseband Processor for WLAN
M. Krstic, E. Grass
Colloquium des Fachbereichs Informatik der Universität Passau, June 29, 2004, Germany
Mobile Nutzung von Sensornetzwerken auf der PLASMA-Plattform (invited)
J. deMeer, P. Langendörfer
Ringvorlesung des Instituts für Informatik und Gesellschaft der Universität Freiburg (Breisgau), June 28, 2004, Germany
Mobile Nutzung von Sensornetzwerken auf der PLASMA-Plattform (invited)
J. deMeer, P. Langendörfer
11th International MIXDES Conference, Szczecin, June 24-26, 2004, Poland
VBIC Model for SiGe:C Bipolar Technology
B. Senapati, R.F. Scholz, D. Knoll, B. Heinemann, A. Chakravorty
HREDAMM, Zakopane, June 13-17, 2004, Poland
High Resolution X-Ray Characterization of SiGe:C Structures for High Frequency Microelectronics Applications (invited)
P. Zaumseil
63rd ARFTG Conference (Automatic RF Techniques Group), Fort Worth, Texas, June 11, 2004, USA
Advanced Technique for Broadband On-Wafer RF Device Characterization
F. Korndörfer, R. F. Scholz, B. Senapati, A. Rumiantsev
The 7th International Conference on Electronic Commerce Research - ICECR-7, Dallas, June 10-13, 2004, USA
Ensuring Anonymity in E-commerce Systems Using a Hidden Identity Approach: Discussion of Problems and Solutions
O. Maye, K. Piotrowski, P. Langendörfer, Z. Dyka
EUREKA MEDEA+ Board Paris, June 03, 2004, France
MEDman - Ubiquitous Medical Assistance
J. deMeer
GDR Meeting, Grenoble, June 2004, France
The Heteroepitaxial Systems Pr2O3 /Si(001) and Pr2O3 /Si(111): Structure and Strain in Rare Earth Oxide Epilayers on Si
T. Schröder, H.-J. Müssig
2nd International Symposium on Fluctuations and Noise, Maspalomas, Gran Canaria, May 26-28, 2004, Spain
Jitter and Phase-Noise in Oscillators and Phase-locked Loops
F. Herzel, W. Winkler, J. Borngräber
High-Frequency Low-Noise Amplifiers and Low-Jitter Oscillators in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, F. Herzel, B. Heinemann, R. Scholz
E-MRS Spring Meeting, Strasbourg, May 24-28, 2004, France
Are There Alternatives to Silicon Based Technology (invited)
W. Mehr
First Investigation of MIM Capacitors Using Pr2O3 Dielectrics
C. Wenger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.-J. Müssig
Solid State Reaction between Pr and SiO2 Studied by Photoelectron Spectroscopy and ab initio Calculations
G. Lupina, J. Dabrowski, P. Formanek, D. Schmeißer, R. Sorge, C. Wenger, P. Zaumseil, H.-J. Müssig
A Grazing Incidence X-Ray Diffraction Study of Ultra-Thin Praseodymium Oxide Layers on Si (001): From Pseudomorphism to Bulk Behavior
T. Schröder, T.L. Lee, L. Libralesso, J. Zegenhagen, Ch. Wenger, P. Zaumseil, H.-J. Müssig
A Combined Synchrotron X-Ray Diffraction and STM Study of the Structural Properties of Ultra-Thin Pr2O3 Layers on Si(111)
T. Schröder, H.-J. Müssig
Silicon-based Light Emission after Ion Implantation
M. Kittler, T. Arguirov, A. Fischer, W. Seifert
2nd International SiGe Technology and Device Meeting ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
SiGe-HBT Design for High-Frequency Applications (invited)
H. Rücker, B. Heinemann, R. Barth, D. Knoll, P. Schley, R. Scholz, B. Tillack, W. Winkler
Spectroscopic Ellipsometry for In-Line Process Control of SiGe:C HBT Technology
O. Fursenko, J. Bauer, P. Zaumseil, D. Krüger, A. Goryachko, Y. Yamamoto, K. Köpke, B. Tillack
A 117 GHz LC-Oscillator in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, B. Heinemann
A DC - 10 GHz Amplifier with Digital Offset Correction
H. Gustat
Hahn Meitner Institute Berlin, April 2004, Germany
A Comparative SR-GIXRD, STM and LEED Study of the Structural Properties of Pr2O3 Epilayers on Si(001) and Si(111) (invited)
T. Schröder, H.-J. Müssig
STS Session: SiGe/SOI/Strained Si: from growth to device properties, International Congress Center Munich, April 21, 2004, Germany
High-Performance, Low-Cost SiGe:C BiCMOS Technology (invited)
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler
Semicon Europe 2004 , Munich, April 20-22, 2004, Germany
High-Performance, Low-Cost SiGe:C BiCMOS Technology (invited)
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler
MRS Spring Meeting, San Francisco, April 21-25, 2004 , USA
Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with Thermal SiO2
H.-J. Müssig, J. Dabrowski, C. Wenger, G. Lupina, R. Sorge, P. Formanek, P. Zaumseil, D. Schmeißer
Semicon Europe, Munich, April 20-22, 2004, Germany
High-Performance, Low-Cost SiGe:C BiCMOS Technology
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler
1st Workshop on Positioning, Navigation and Communication 2004, Hannover, March 26, 2004, Germany
Bluetooth Indoor Localization System
G. Fischer, B. Dietrich, F. Winkler
Applying Position Prediction as a Means for Performance-tuning in Location-aware Platforms
A. Post, P. Langendörfer, R. Kraemer
Sino-German Semiconductor Seminar III, Shanghai, March 22, 2004, China
A High Performance SiGe:C BiCMOS Technology with Complementary RF High Voltage LDMOS
W. Kissinger
Workshop Analogschaltungen, Freiburg, March 11-12, 2004, Germany
5 GHz Transceiver in a SiGe:C BiCMOS Technology
J. Klatt, N. Fiebig
Frühjahrstagung der DPG, Regensburg, March 8-12, 2004, Germany
First Investigations of MIM Capacitors Pr2O3 Dielectrics
C. Wenger
Structure and Thickness-dependent Lattice Parameters of Ultrathin Epitaxial Pr2O3 Films on Si(001) Studied by SR-GIXRD
T. Schröder, T.-L. Lee, J. Zegenhagen, C. Wenger, P. Zaumseil, H.-J. Müssig
3rd Workshop Ellipsometrie, Stuttgart, February 23-25, 2004, Germany
Optimization of Anti-reflective Coating PECVD SiOxNy for Lithography Application
O. Fursenko, J. Bauer, B. Kuck, A. Penkov
Bestimmung der optischen Eigenschaften des Fotoresists für die Fotolithographie-Wellenlängen durch Swingoptimierung
J. Bauer, U. Haak, G. Drescher
WWIC 2004, Frankfurt (Oder), February 05-07, 2004, Germany
High-Level Behavioral SDL Model for the IEEE 802.15.3. MAC Protocol
D. Dietterle, I. Babanskaja, K. Dombrowski, R. Kraemer
Photonics West 2004 - Optoelectronic Integration on Silicon, January 24-29, 2004, San Jose, USA
Silicon-based Light Emission After Ion Implantation
M. Kittler, T. Arguirov, W. Seifert
International Conference on Communications, Devices and Intelligent Systems, January 8-10, 2004, Kolkata, India
Macro Model of Power RF LDMOSFET
B. Senapati, K.-E. Ehwald, I. Shevchenko, R. Scholz, F. Fürnhammer
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