IHP presentations worldwide

         since January 2004

IEDM 2004, San Francisco, Dec. 12-15, 2004, USA

A Low-Parasitic Collector Construction for High-Speed SiGe:C HBTs

B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, T. Grabolla, U. Haak, W. Höppner, D. Knoll, B. Kuck, R. Kurps, K. Köpke, S. Marschmeyer, H.H. Richter, H. Rücker, P. Schley, D. Schmidt, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto

Integration of High-Performance SiGe:C HBTs with Thin-Film SOI CMOS

H. Rücker, B. Heinemann, R. Barth, D. Bolze, J. Drews, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, S. Marschmeyer, N. Mohapatra, H.H. Richter, P. Schley, D. Schmidt, B. Tillack, G. Weidner, D. Wolansky, H.-E. Wulf, Y. Yamamoto

IEEE Norchip 2004, Oslo, Nov. 8-9, 2004, Norway

A 1 GHz AGC Amplifier in BiCMOS with 3µm Settling-Time for 802.11a WLAN

K. Schmalz

Tag der Wissenschaft an der Europa-Universität Frankfurt (Oder), Nov. 10, 2004, Germany

Mikroelektronik - der großen Schritt in kleinste Welten (invited)

W. Mehr

Compound Semiconductor IC Symposium, Monterey, Oct. 23-28, 2004, USA

Advances in SiGe HBT Technology in Europe (invited)

H. Rücker, W. Winkler

Deutscher MBE-Workshop, Braunschweig, Oct. 12, 2004, Germany

Properties of Pr-silicate High-K Dielectrics Formed by Solid State Reaction Between Pr and SiO₂

G. Lupina

European Gallium Arsenide and other Compound Semiconductors Application Symposium 2004, Amsterdam, Oct. 11-12, 2004, Netherlands

Application of SiGe:C BiCMOS to Wireless and Radar (invited)

W. Winkler, B. Heinemann, D. Knoll

Fraunhofer Institut für Photonische Mikrosysteme, Dresden, Oct. 7, 2004, Germany

Si-basierte Lichtemitter für die On-chip-Datenübertragung (invited)

M. Kittler

SiGe: Materials, Processing and Devices: The 1st International Symposium, Honolulu, Oct. 03-08, 2004, Hawaii

Complementary SiGe BiCMOS (invited)

B. Heinemann, J. Drews, D. Knoll, R. Kurps, S. Marschmeyer, H. Rücker, W. Winkler, Y. Yamamoto

206^th Meeting of the Electrochemical Society, Honolulu, Oct. 03-08, 2004, Hawaii

Deposition Conditions and Post Treatment of High-k Praseodymium and Lanthanum Oxide Dielectrics

G. Lippert, J. Dabrowski, P. Formanek, V. Melnik, R. Sorge, Ch. Wenger, P. Zaumseil, H.-J. Müssig

Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband Communication, Frankfurt (Oder), September 30, 2004, Germany

SGB25VD Low Cost BiCMOS Approach

M. Methfessel

International Union of Radio Science, Landesausschuss in der Bundesrepublik Deutschland Kleinheubacher Tagung Miltenberg, Sept. 24, 2004, Germany

Analog Design Challenges in Ultrawide-Band Technology (invited)

B. Dietrich

Das Silicium-Zeitalter: Silicium für Mikroelektronik, Photvolatik und Photonik, Augustusburg, Sept. 23-25, 2004, Germany

Advances in SiGe HBT Technology in Europe

B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler, W. Mehr

Nitrogen in Thin Silicon Wafers Determined by Infrared Spectroscopy

V.D. Akhmetov, O. Lysytskiy, H. Richter

Mobile Computing und Medien Kommunikation im Internet, University Ulm, Sept. 23, 2004, Germany

A Location Aware Revocation Approach

D. Kulikowski, P. Langendörfer, K. Piotrowski

ESSDERC 2004, Leuven, Sept. 21-23, 2004, Belgium

Self-Consistent Characterization of Gate Controlled Diodes for CMOS Technology Monitoring

R. Sorge, P. Schley, K.-E. Ehwald

A Two Mask Complementary LDMOS Module Integrated in a 0.25 µm SiGe:C BiCMOS Platform

K.-E. Ehwald, A. Fischer, F. Fürnhammer, W. Winkler, B. Senapati, R. Barth, D. Bolze, B. Heinemann, D. Knoll, H. Rücker, D. Schmidt, I. Shevchenko, R. Sorge, H.-E Wulf

ESSCIRC 2004 - European Solid-State Circuits Conference, Leuven, Sept. 20-23, 2004, Belgium

60 GHz Transceiver Circuits in SiGe:C BiCMOS Technology

W. Winkler, J. Borngräber, F. Herzel, H. Gustat, B. Heinemann, F. Korndörfer

Lithography Workshop, Sept. 17-19, 2004, Pommelsbrunn, Germany

Determination of Optical Constants Using Swing Curves (invited)

J. Bauer, U. Haak, G. Drescher

2^nd International Workshop on Discrete-Event System Design, DESDes '04, Dychow, Sept. 15-17, 2004, Poland

The System Behavioral Model of IEEE 802.15.3 Mac Protocol - Design and Profiling

J. Ryman, D. Dietterle, K. Dombrowski, P. Bubacz

14^th International Conference on PATMOS 2004, Santorini, September 15-17, 2004, Greece

GALSification of IEEE 802.11a Baseband Processor

M. Krstic, E. Grass

10th Internat. Conf. on Extended Defects in Semiconductors EDS 2004, Moscow, Sept. 2004, Russia

Silicon-based Light Emission After Ion Implantation: Role of Defects and of Crystalline Perfection (invited)

M. Kittler

XTOP 2004, Prague, Sept.- 07-10, 2004, Czech Republic

A Complex X-Ray Characterization of Epitaxially Grown High-K Gate Dielectrics

P. Zaumseil, T. Schröder

EUROMICRO Symposium on Digital System Design, Rennes, Aug. 31- Sept., 03, 2004, France

Mapping of High-Level SDL Models to Efficient Implementations for TinyOS

D. Dietterle, J. Ryman, K. Dombrowski, R. Kraemer

North Eastern University, Boston, August 12, 2004, USA

PLASMA: A Location-, Privacy- and Energy-aware Middleware Platform (invited)

P. Langendörfer

4^th Workshop on Applications and Services in Wireless Networks, Boston, Aug. 09-11, 2004, USA

PLASMADS: Smart Mobiles Meet Intelligent Environments

P. Langendörfer, H. Maass, T. Falck

Energy Efficient Middleware Design in Support of User Privacy (invited)

P. Langendörfer

Ecole Centrale de Lyon, Laboratory of Electronical Engineering, Lyon, July 2004, France

Modern Synchrotron Radiation Grazing Incidence Diffraction Studies: The Example of Epitaxial Pr₂O₃ Layers on Si(001) and Si(111) (invited)

T. Schröder, H.-J. Müssig

Gordon Conference Defects in Semiconductors New London, July 2004

Direct Evidence of Internal Schottky Barriers at NiSi2 Precipitates in Si by Electron Holography

M. Kittler

UML/Java Workshop für Embedded und Real-time Systeme, TFH Berlin, July 29, 2004, Germany

Mobile Application Patterns - Real Time or Ubiquity? (invited)

J. deMeer

Workshop Advances in Modeling and Simulation of Semiconductor Devices, Berlin, July 12-16, 2004, Germany

BiCMOS Integration of High-Speed SiGe:C HBTs (invited)

B. Heinemann, H. Rücker

University of Hannover, Institute for Semiconductor Devices and Electronic Materials, July, 08, 2004, Germany

Atomic Level Control of SiGe Epitaxy and Doping (invited)

B. Tillack

DASIA 2004, Data Systems in Aerospace, Nice, June 28-July 01, 2004, France

Remote Operations: A Middleware and Distributed Systems Architecture for Satellite On-Board Wireless Communication

R. Kraemer, K. Dombrowski, D. Dietterle, P. Langendörfer, M. Methfessel

16^th International Vacuum Congress, Venice, June 28 - July 02, 2004, Italy

Dependence of Structural and Electrical Properties of Pr and La Oxides on Growth, Annealing and Storage Conditions

G. Lippert, J. Dabrowski, P. Formanek, V. Melnik, R. Sorge, Ch. Wenger, P. Zaumseil, H.-J. Müssig

Workshop of Dielectrics in Microelectronics 2004, Cork, June 28-30, 2004, Ireland

Electrical Properties of Praseodymium-Silicate Films for High-K Gate Applications

C. Wenger, J. Dabrowski, G. Lupina, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.-J. Müssig

4^th ACiD-WG Workshop, Turku, June 28-29, Finland

GALS Baseband Processor for WLAN

M. Krstic, E. Grass

Colloquium des Fachbereichs Informatik der Universität Passau, June 29, 2004, Germany

Mobile Nutzung von Sensornetzwerken auf der PLASMA-Plattform (invited)

J. deMeer, P. Langendörfer

Ringvorlesung des Instituts für Informatik und Gesellschaft der Universität Freiburg (Breisgau), June 28, 2004, Germany

Mobile Nutzung von Sensornetzwerken auf der PLASMA-Plattform (invited)

J. deMeer, P. Langendörfer

11^th International MIXDES Conference, Szczecin, June 24-26, 2004, Poland

VBIC Model for SiGe:C Bipolar Technology

B. Senapati, R.F. Scholz, D. Knoll, B. Heinemann, A. Chakravorty

HREDAMM, Zakopane, June 13-17, 2004, Poland

High Resolution X-Ray Characterization of SiGe:C Structures for High Frequency Microelectronics Applications (invited)

P. Zaumseil

63^rd ARFTG Conference (Automatic RF Techniques Group), Fort Worth, Texas, June 11, 2004, USA

Advanced Technique for Broadband On-Wafer RF Device Characterization

F. Korndörfer, R. F. Scholz, B. Senapati, A. Rumiantsev

The 7^th International Conference on Electronic Commerce Research - ICECR-7, Dallas, June 10-13, 2004, USA

Ensuring Anonymity in E-commerce Systems Using a Hidden Identity Approach: Discussion of Problems and Solutions

O. Maye, K. Piotrowski, P. Langendörfer, Z. Dyka

EUREKA MEDEA+ Board Paris, June 03, 2004, France

MEDman - Ubiquitous Medical Assistance

J. deMeer

GDR Meeting, Grenoble, June 2004, France

The Heteroepitaxial Systems Pr₂O₃ /Si(001) and Pr₂O₃ /Si(111): Structure and Strain in Rare Earth Oxide Epilayers on Si

T. Schröder, H.-J. Müssig

2^nd International Symposium on Fluctuations and Noise, Maspalomas, Gran Canaria, May 26-28, 2004, Spain

Jitter and Phase-Noise in Oscillators and Phase-locked Loops

F. Herzel, W. Winkler, J. Borngräber

High-Frequency Low-Noise Amplifiers and Low-Jitter Oscillators in SiGe:C BiCMOS Technology

W. Winkler, J. Borngräber, F. Herzel, B. Heinemann, R. Scholz

E-MRS Spring Meeting, Strasbourg, May 24-28, 2004, France

Are There Alternatives to Silicon Based Technology (invited)

W. Mehr

First Investigation of MIM Capacitors Using Pr₂O₃ Dielectrics

C. Wenger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.-J. Müssig

Solid State Reaction between Pr and SiO₂ Studied by Photoelectron Spectroscopy and ab initio Calculations

G. Lupina, J. Dabrowski, P. Formanek, D. Schmeißer, R. Sorge, C. Wenger, P. Zaumseil, H.-J. Müssig

A Grazing Incidence X-Ray Diffraction Study of Ultra-Thin Praseodymium Oxide Layers on Si (001): From Pseudomorphism to Bulk Behavior

T. Schröder, T.L. Lee, L. Libralesso, J. Zegenhagen, Ch. Wenger, P. Zaumseil, H.-J. Müssig

A Combined Synchrotron X-Ray Diffraction and STM Study of the Structural Properties of Ultra-Thin Pr₂O₃ Layers on Si(111)

T. Schröder, H.-J. Müssig

Silicon-based Light Emission after Ion Implantation

M. Kittler, T. Arguirov, A. Fischer, W. Seifert

2^nd International SiGe Technology and Device Meeting ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany

SiGe-HBT Design for High-Frequency Applications (invited)

H. Rücker, B. Heinemann, R. Barth, D. Knoll, P. Schley, R. Scholz, B. Tillack, W. Winkler

Spectroscopic Ellipsometry for In-Line Process Control of SiGe:C HBT Technology

O. Fursenko, J. Bauer, P. Zaumseil, D. Krüger, A. Goryachko, Y. Yamamoto, K. Köpke, B. Tillack

A 117 GHz LC-Oscillator in SiGe:C BiCMOS Technology

W. Winkler, J. Borngräber, B. Heinemann

A DC - 10 GHz Amplifier with Digital Offset Correction

H. Gustat

Hahn Meitner Institute Berlin, April 2004, Germany

A Comparative SR-GIXRD, STM and LEED Study of the Structural Properties of Pr₂O₃ Epilayers on Si(001) and Si(111) (invited)

T. Schröder, H.-J. Müssig

STS Session: SiGe/SOI/Strained Si: from growth to device properties, International Congress Center Munich, April 21, 2004, Germany

High-Performance, Low-Cost SiGe:C BiCMOS Technology (invited)

B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler

Semicon Europe 2004 , Munich, April 20-22, 2004, Germany

High-Performance, Low-Cost SiGe:C BiCMOS Technology (invited)

B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler

MRS Spring Meeting, San Francisco, April 21-25, 2004 , USA

Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with Thermal SiO₂

H.-J. Müssig, J. Dabrowski, C. Wenger, G. Lupina, R. Sorge, P. Formanek, P. Zaumseil, D. Schmeißer

Semicon Europe, Munich, April 20-22, 2004, Germany

High-Performance, Low-Cost SiGe:C BiCMOS Technology

B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler

1^st Workshop on Positioning, Navigation and Communication 2004, Hannover, March 26, 2004, Germany

Bluetooth Indoor Localization System

G. Fischer, B. Dietrich, F. Winkler

Applying Position Prediction as a Means for Performance-tuning in Location-aware Platforms

A. Post, P. Langendörfer, R. Kraemer

Sino-German Semiconductor Seminar III, Shanghai, March 22, 2004, China

A High Performance SiGe:C BiCMOS Technology with Complementary RF High Voltage LDMOS

W. Kissinger

Workshop Analogschaltungen, Freiburg, March 11-12, 2004, Germany

5 GHz Transceiver in a SiGe:C BiCMOS Technology

J. Klatt, N. Fiebig

Frühjahrstagung der DPG, Regensburg, March 8-12, 2004, Germany

First Investigations of MIM Capacitors Pr₂O₃ Dielectrics

C. Wenger

Structure and Thickness-dependent Lattice Parameters of Ultrathin Epitaxial Pr₂O₃ Films on Si(001) Studied by SR-GIXRD

T. Schröder, T.-L. Lee, J. Zegenhagen, C. Wenger, P. Zaumseil, H.-J. Müssig

3^rd Workshop Ellipsometrie, Stuttgart, February 23-25, 2004, Germany

Optimization of Anti-reflective Coating PECVD SiOxNy for Lithography Application

O. Fursenko, J. Bauer, B. Kuck, A. Penkov

Bestimmung der optischen Eigenschaften des Fotoresists für die Fotolithographie-Wellenlängen durch Swingoptimierung

J. Bauer, U. Haak, G. Drescher

WWIC 2004, Frankfurt (Oder), February 05-07, 2004, Germany

High-Level Behavioral SDL Model for the IEEE 802.15.3. MAC Protocol

D. Dietterle, I. Babanskaja, K. Dombrowski, R. Kraemer

Photonics West 2004 - Optoelectronic Integration on Silicon, January 24-29, 2004, San Jose, USA

Silicon-based Light Emission After Ion Implantation

M. Kittler, T. Arguirov, W. Seifert

International Conference on Communications, Devices and Intelligent Systems, January 8-10, 2004, Kolkata, India

Macro Model of Power RF LDMOSFET

B. Senapati, K.-E. Ehwald, I. Shevchenko, R. Scholz, F. Fürnhammer

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