Selected Publications - 2005:
1) MIM capacitors using amorphous high-k PrTixOy dielectrics
Ch. Wenger, R. Sorge, T. Schroeder, A. U. Mane, G. Lippert, G. Lupina, J. Dabrowski, P. Zaumseil, and H.-J. Müssig
IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Microelectronic Engineering 80, 313-316 (2005).
Capacitor performance of amorphous PrTixOy dielectric films deposited on TiNx metal electrodes to form metal-insulator-metal (MIM) structures with Al top electrodes is demonstrated for the first time. The PrTixOy capacitors were fabricated within the temperature budget of back end processes. Preliminary data on the composition of the dielectric layers and the interaction of water with the films was obtained by X-ray photoelectron spectroscopy (XPS). The I(V) and C(V) device characteristics are discussed.