Overview >> NVM - Resistive Switching Dielectrics for non-volatile memory (NVM) applications
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The Objective
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The aim of the project is to increase the functionality of IHP 0.13µm BiCMOS technology by the integration of embedded non-volatile memory (NVM) devices based on the innovative resistive random access memory (RRAM) approach. Besides fundamental research issues to unveil the solid state physics of resistive switching phenomena in dielectrics, cleanroom technologies are developed to achieve the cost-effective integration of embedded NVM cells in form of back-end-of-line (BEOL) MIM structures. more
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IHP's Contribution
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The materials research department at IHP is a key player in the field of engineered dielectric films for applications in Silicon IC technology.
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Funding
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This project is funded by IHP and DFG.
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Project Partners
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IHP, University of Houston Texas, TU Berlin
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Selected Publications
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2007
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