Overview >>                      NVM - Resistive Switching Dielectrics for non-volatile memory (NVM) applications

 

The Objective The aim of the project is to increase the functionality of IHP 0.13µm BiCMOS technology by the integration of embedded non-volatile memory (NVM) devices based on the innovative resistive random access memory (RRAM) approach. Besides fundamental research issues to unveil the solid state physics of resistive switching phenomena in dielectrics, cleanroom technologies are developed to achieve the cost-effective integration of embedded NVM cells in form of back-end-of-line (BEOL) MIM structures.   more

IHP's Contribution The materials research department at IHP is a key player in the field of engineered dielectric films for applications in Silicon IC technology.

Funding This project is funded by IHP and DFG.

Project Partners IHP, University of Houston Texas, TU Berlin

Selected Publications 2007

Interesting Links www.fujitsu.com; www.imec.be; www.minatec.com

 

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