Selected Publications - 2004:

1) First investigation of metal-insulator-metal (MIM) capacitor using Pr₂O₃ dielectrics

Ch. Wenger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert and H.-J. Müssig

IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Materials Science in Semiconductor Processing 7 (2004)

Metal-insulator-metal (MIM) capacitors with Pr₂O₃ as high-k material have been investigated for the first time. We varied the thickness of the Pr₂O₃ layers as well as the bottom electrode material. The layers are characterized using X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy.

The electrical characterization shows that Pr₂O₃ MIM capacitors can provide higher capacitance densities than Si₃N₄ MIM capacitors while still maintaining comparable voltage coefficients of capacitance. The Pr₂O₃ dielectric material seems to be suitable for use in silicon RF applications.

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