Selected Publications - 2004:
1) Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr2O3 films on Si (001) studied by SR-GIXRD
T. Schroeder, T.-L. Lee*, J. Zegenhagen*, Ch. Wenger, P. Zaumseil and H.-J. Müssig
IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
* E.S.R.F., 6, Rue Jules Horowitz, 38043 Grenoble, France
Applied Physics Letters 85(7), 1229 (2004)
Pr2O3 grown heteroepitaxially on Si(001) is a promising candidate for applications as a high-k dielectric in future silicon-based microelectronic devices. The technologically important thickness range from 1 to 10 nm has been investigated by synchrotron radiation grazing incidence X-ray diffraction. The oxide film grows as cubic Pr2O3 phase with its (101) plane on the Si(001) substrate in form of two orthogonal rotation domains. Monitoring the evolution of the oxide unit cell lattice parameters as a function of film thickness from 1 to 10 nm, the transition from almost perfect pseudomorphism to bulk values is detected.
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