Low-Volume & Multi-Project Service
IHP offers research partners and customers access to its powerful SiGe:C BiCMOS technologies and special integrated RF modules.
The technologies are especially suited for applications in the higher GHz bands (e.g. for wireless, broadband, radar). They provide integrated HBTs with cut-off frequencies of up to 500 GHz and integrated LDMOS devices with breakdown voltages of up to 22 V, including complementary devices.
The following SiGe:C BiCMOS Technologies are available for
MPW & Prototyping
SG25H1: | A high-performance 0.25 µm technology with npn-HBTs up to fT/fmax= 180/220 GHz. |
SG25H3: | A 0.25 µm technology with a set of npn-HBTs ranging from a higher RF performance (fT/fmax= 110 GHz/180 GHz) to higher breakdown voltages up to 7 V. |
SGB25V: | A cost-effective technology with a set of npn-HBTs up to a breakdown voltage of 7 V. |
SG13S: | A high-performance 0.13 µm BiCMOS with npn-HBTs up to fT / fmax= 250/300 GHz, with 3.3 V I/O CMOS and 1.2 V logic CMOS. |
SG13G2: | A 0.13 µm BiCMOS technologies with same device portfolio as SG13S but much higher bipolar performance with fT/fmax = 300/500 GHz |
The backend offers 3 (SG13: 5) thin and 2 thick metal layers (TM1: 2 μm, TM2: 3 μm).
There is a schedule for the MPW & Prototyping runs.
A cadence-based mixed signal design kit is available. For high frequency designs an analogue Design Kit in ADS can be used. IHP’s reusable blocks and IPs for wireless and broadband are offered to support designs.
The following Modules are available
GD: | Additional integrated complementary RF LDMOS devices with nLDMOS up to 22 V, pLDMOS up to -16 V breakdown voltage and an isolated nLDMOS device. (available in SGB25V) |
H3P: | Additional pnp-HBTs with fT/fmax = 90/120 GHz for complementary bipolar applications. (available in SG25H3) |
RF-MEMS switch: | Additional capacitive MEMS switch devices for frequencies between 30 GHz to 100 GHz. (available in SG25H1 and SG25H3 technology) |
LBE: | The Localized Backside Etching module is offered to remove silicon locally to improve passive performance. (available in all technologies) |
Bipolar Section
SG25H1 | npn1 | npn2 |
AE | 0.21 x 0.84 µm2 | 0.18 x 0.84 µm2 |
Peak fmax | 190 GHz | 220 GHz |
Peak fT | 190 GHz | 180 GHz |
BVCE0 | 1.9 V | 1.9 V |
BVCB0 | 4.5 V | 4.5 V |
VA | 40 V | 40 V |
ß | 270 | 260 |
SG25H3 | High Performance | Medium Voltage | High Voltage | PNP |
AE | 0.22 x 0.84 µm2 | 0.22 x 2.24 µm2 | 0.22 x 2.24 µm2 | 0.21 x 0.84 µm2 |
Peak fmax | 180 GHz | 140 GHz | 80 GHz | 120 GHz |
Peak fT | 110 GHz | 45 GHz | 30 GHz | 90 GHz |
BVCE0 | 2.3 V | 5 V | >7 V | -2.5 V |
BVCB0 | 6.0 V | 15.5 V | 21.0 V | -4.0 V |
VA | 30 V | 30 V | 30 V | 30 V |
ß | 150 | 150 | 150 | 100 |
SGB25V | High Performance | Standard | High Voltage |
AE | 0.42 x 0.84 µm2 | 0.42 x 0.84 µm2 | 0.42 x 0.84 µm2 |
Peak fmax | 95 GHz | 90 GHz | 70 GHz |
Peak fT | 75 GHz | 45 GHz | 25 GHz |
BVCE0 | 2.4 V | 4.0 V | 7.0 V |
BVCB0 | >7 V | >15 V | >20 V |
VA | >50 V | >80 V | >100 V |
ß | 190 | 190 | 190 |
SG13S | npn13P | npn13V |
AE | 0.12 x 0.48 µm2 | 0.18 x 1.02 µm2 |
Peak fmax | 300 GHz | 120 GHz |
Peak fT | 250 GHz | 45 GHz |
BVCE0 | 1.7 V | 3.7 V |
BVCB0 | 5.0 V | 16 V |
ß | 900 | 600 |
CMOS Section
SG25H1/H3* | SG13S | |||
Core Supply Voltage | 2.5 V | 3.3 V | 1.2 V | |
nMOS | VTH | 0.6 V | 0.65 V | 0.49 V |
IOUT** | 540 µA/µm | 520 µA/µm | 500 µA/µm | |
IOFF | 3 pA/µm | 10 pA/µm | 500 pA/µm | |
pMOS | VTH | -0.56 V | -0.61 V | -0.42 V |
IOUT | -230 µA/µm | -220 µA/µm | -210 µA/µm | |
IOFF | -3 pA/µm | -10 pA/µm | -500 pA/µm | |
* Parameters for SGB25V are similar ** @ VG = 2.5 V | ||||
Passives Section
SG25H1/H3 | SG25V | SG13S | |
MIM Capacitor | 1 fF/µm2 | 1 fF/µm2 | 1.5 fF/µm2 |
N+ Poly Resistor | 210 Ω/ | 210 Ω/ | - |
P+ Poly Resistor | 280 Ω/ | 310 Ω/ | 250 Ω/ |
High Poly Resistor | 1600 Ω/ | 2000 Ω/ | 1300 Ω/ |
Varactor Cmax/Cmin | 3 | tbd. | tbd. |
Inductor Q@5 GHz | 18 (1 nH) | 18 (1 nH) | 18 (1 nH) |
Inductor Q@10 GHz | 20 (1 nH) | 20 (1 nH) | 20 (1 nH) |
Inductor Q@5 GHz | 37 (1 nH)* | 37 (1 nH)* | 37 (1 nH)* |
* with LBE | |||
GD-Module
| n-LDMOS | p-LDMOS | |
| NLD2GD22C | iNLD2GD13A**** | PLD2GD19B |
BVDSS* | 22 V | 15 V | -16 V |
VTH | 0.55 V | 0.6 V | -0.5 V |
IOUT** | 175 µA/µm | 200 µA/µm | -70 µA/µm |
RON | 4 Ωmm | 4 Ωmm | 12 Ωmm |
Peak fmax*** | 52 GHz | 50 GHz | 30 GHz |
Peak ft*** | 20 GHz | 28 GHz | 9 GHz |
*@50 pA/µm, **@VG = 1.5 V , ***@VDS= 4 V, ****substrate isolated | |||
RF MEMS switch module
Actuation voltage | 25 V |
Con/Coff | > 10 |
Switch time | < 10 µs |
Temperature | -30 – 125°C |
Isolation* | < 20 dB |
Insertion loss* | < 1dB |
Continuous power handling | 13 dB |
*@60 GHz | |
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