Selected Publications - 2006:
1) On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)
T. Schroeder, P. Zaumseil, G. Weidner, Ch. Wenger, J. Dabrowski, H.-J. Müssig, P. Storck*
IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
* SILTRONIC AG, PSF 1140, 84479 Burghausen, Germany
Journal of Applied Physics 99, 014101 (2006)
Twin-free epitaxial cubic (111) praseodymium sesquioxide films were prepared on Si(111) by hexagonal to cubic phase transition. Synchrotron radiation grazing incidence X-ray diffraction and Transmission electron microscopy were applied to characterize the phase transition and the film structure. As-deposited films grow in the (0001) oriented hexagonal high-temperature phase of praseodymium sesquioxide and match the in-plane symmetry of the substrate within 0.5% by aligning the <10-10> Pr2O3 along the <01-1> Si directions. In-situ X-ray diffraction studied deduce an activation energy of 2.2 eV for the hexagonal to cubic phase transition. Transmission electron microscopy shows that the phase transition is accompanied by an interface reaction at the oxide / Si(111) boundary. The cubic(111) low-temperature praseodymium sesquioxide phase alignes its [-1-12] in-plane directions along the [11-2] Si azimuth, resulting in a lattice misfit of 2.6 %. The 180° rotation of the cubic oxide lattice with respect to the Si substrate results from a stacking fault at the substrate / oxide boundary.
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