Overview >> Embedded Flash Memory Module integrated in a 0.25µm RF-SiGe:C BiCMOS platform.
| Goals | The goal of this project is the demonstration of a cost-effective process technology for integrating an embedded flash memory based on a low power tunnel writing concept into a 0.25µm, high-performance SiGe:C RF-BiCMOS process. |
| Motivation | A modular non-volatile-memory technology, embedded into an advanced RF-BiCMOS process, has significant potential for a range of important system-level applications. Most Si-foundries offer optional embedded flash modules for their (RF-) CMOS processes. For SiGe:C BiCMOS this is a consequent development, but which is not yet established. Main requirements are cost-effectiveness and low power consumption, particularly for use in mobile communication systems. Memories ranging from small to medium density are needed (from a few byte, e.g. for non-volatile registers, up to a few Mbit, e.g. for operation system storage). The overall advantages of such embedded memory integration are the added system functionality and a reduced total system cost. |
| Result | A process technology has been developed to integrate an embedded Flash memory into IHP’s 0.25µm SiGe:C SOC RF-BiCMOS technology platform. For CMOS compatibility a standard floating-gate approach was chosen. Fowler-Nordheim-tunneling is used as programming mechanism due to its intrinsic low power consumption. The developed integration scheme needs 4 additional mask steps on top of the baseline process flow to produce flash cells and high-voltage devices needed in the memories periphery. A first 1Mbit demonstrator memory has been developed, showing the feasibility of the process technology for these memory densities. |
| Funding | This project is funded by the IHP. |
| Project Partners | National Technical University of Kiev, Ukraine (CAD) |