Selected Publications - 2006:
1) High quality Al2O3 / Pr2O3 / Al2O3 MIM capacitors for RF applications
Ch. Wenger, G. Lippert, R. Sorge, T. Schroeder, A.U. Mane, G. Lupina, J. Dabrowski,
P. Zaumseil, X. Fan, L. Oberbeck*, U. Schroeder*, and H.-J. Müssig
IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
* Infineon Technologies SC300 GmbH & Co. OHG, 01099 Dresden, Germany
IEEE Transactions on Electron Devices Vol. 53, 1937 (2006)
The electrical characteristics of layered Al2O3/Pr2O3/Al2O3 MIM capacitors for RF device applications are presented for the first time. This advanced dielectric layer system 4 nm Al2O3 / 8 nm Pr2O3 / 4 nm Al2O3 shows a high apacitance density of 5.7 fF/mm2, a low leakage current density of 5x10-9 A/cm2 at 1 V and an excellent dielectric loss behavior over the studied frequency range.