Selected Publications - 2006:

1) High quality Al₂O₃ / Pr₂O₃ / Al₂O₃ MIM capacitors for RF applications

Ch. Wenger, G. Lippert, R. Sorge, T. Schroeder, A.U. Mane, G. Lupina, J. Dabrowski,

P. Zaumseil, X. Fan, L. Oberbeck*, U. Schroeder*, and H.-J. Müssig

IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

* Infineon Technologies SC300 GmbH & Co. OHG, 01099 Dresden, Germany

IEEE Transactions on Electron Devices Vol. 53, 1937 (2006)

The electrical characteristics of layered Al₂O₃/Pr₂O₃/Al₂O₃ MIM capacitors for RF device applications are presented for the first time. This advanced dielectric layer system 4 nm Al₂O₃ / 8 nm Pr₂O₃ / 4 nm Al₂O₃ shows a high apacitance density of 5.7 fF/mm², a low leakage current density of 5x10^-9 A/cm² at 1 V and an excellent dielectric loss behavior over the studied frequency range.

PDF

back