Overview >> 0.25 µm BiCMOS Technologies
| Goals |
(A) Stabilize SG25H2 process (B) Replace all DIF1 npn emitters by matched CVD3 emitters (C) Improve passivation module for all 0.25µm technologies (D) Freeze a “Value CBiCMOS” process |
| Motivation |
(A) SG25H2 technology will only be qualified on customer request. To be ready for this case, a further process stabilization is necessary. (B) DIF1 is already about 10 years under use and has to be replaced ASAP (C) There are indications, in particular from several HBT pressure cooker tests, that our current passivation module is not reliable enough (D) A frozen “Value CBiCMOS” is necessary for all further decisions with respect to this experimental process, including transfer, MPW use etc. |
| Milestones |
(A) Use 4 stabilization lots where two are regular MPW lots (through 2007) (B) SGB25VD ready (03/07); SG25H3 (07/07); SG25H1/H2 (10/07) (C) First split lot evaluation (02/07); Improved module ready (06/07) (D) Freezing integration concept (04/07); Freezing detail flow (06/07) |
| Definition of Success |
(A) SG25H2 provides HBT parameters and yield as well as a digital CMOS yield which are good or high enough for a qualification (B) All processes are available with CVD3-based npn-emitters, where the HBTs show, compared to the devices with “old” emitters, matched parameters and yield (C) Typical “HBT pressure cooker yield” is close to 100% (D) Proving a process flow where C-bipolar devices can be fabricated with parameters as reached in the feasibility study (IEDM2006) and with a yield as it is typical for the SGB25VD npn’s |