Overview >> 0.13 µm BiCMOS Technologies
The objective of the project is the development of a technology suitable for system-on-a-chip (SoC) solutions for wireless and broadband communication at highest data rates and highest transmission frequencies. The 130 nm BiCMOS process will be the platform for future technology research and for the investigation of new circuit and system concepts. Moreover, the technology will be available to research and development partners via the IHP prototyping service.
The integration of mm-wave RF circuits with highspeed, high-density digital blocks in next generation SiGe BiCMOS technologies is a key for cost-effective realizations of high-bandwidth communication systems. HBTs with cut-off frequencies above 200 GHz facilitate new applications such as wireless links in the 60 GHz band, fiber optics communication systems with data rates above 40 Gbps, and automotive radar at 77 GHz.
In 2006, the full-flow 130 nm BiCMOS process was realized for the first time. The technology provides two types of SiGe HBTs optimized for high frequencies and high breakdown voltages, respectively, and CMOS transistors with two gate oxide thicknesses for operating voltages of 1.2 V and 3.3 V.
New features of the HBT devices compared to previous generations are self-aligned base and emitter regions and minimal emitter widths of 120 nm. Cut-off frequencies fT and maximum oscillation frequencies fmax in the 250 to 300 GHz range were realized for the high-performance HBTs. The CMOS process was optimized for low-power applications. The 1.2 V NMOS and PMOS transistors exhibit off-currents of 50 pA/μm and on-currents of 440 μA/μm and 200 μA/μm, respectively.
An aluminum back-end-of-line with up to seven metal layers was developed. These include two metal layers with thicknesses of 2 μm and 3 μm facilitating the integration of passive components such as inductors, transformers, and transmission lines with high quality factors.
A first revision of the design kit for the 130 nm BiCMOS technology was developed in 2006. It is now used for designing benchmark circuits for the evaluation of the RF performance of the technology and digital CMOS libraries. The capability of the technology for VLSI circuit fabrication was demonstrated by first fully-functional 4 Mbit SRAM chips.