Overview >> RF LDMOS Integration
| Goals | Demonstration of a modular low cost integration of Laterally Diffused MOS transistors (LDMOS), capable for RF and smart power (Vdd 42 V) applications, into a 0.25 µm CMOS/SiGe:C BICMOS technology platform. |
| Motivation | Complementary LDMOS transistors integrated into a base CMOS platform are key enablers for cost efficient SOC solutions including RF power amplifiers for wireless applications, highly integrated power management and high voltage IO circuits. Emerging multimedia applications require computing power with a mixed signal capability in order to manage diverse peripherals such as TFT-LCDs, lightings, cameras and audio parts. LDMOS devices with blocking voltages of 70 V are promising candidates for the emerging applications of the next generation 42V automotive power net. A high RF performance for the high voltage devices corresponds to a high slew rate of the power transistors in the output stage of DC/DC converter, which enables both a high efficiency and a very small inductivity capable for integrating into the same IC package. |
| Results | The complementary RF LDMOS modules developed require just two additional mask steps. Two extra mask steps are needed for integration of the high voltage PLDMOS and one mask step for the NLDMOS The isolating deep n-well of the high voltage PLDMOS is fabricated by a high energy P implantation (several MeVs). The DC and RF performance parameters of the devices obtained in test runs show values, which belong to the best in class. |
| Funding | This project is internally funded by the IHP. |