Technical Basis

The following tools are currently being used:

Thin Film Growth and Treatment Facilities

Molecular Beam Epitaxy (MBE), Molecular Organic Chemical Vapour Deposition (MO-CVD) and Rapid Thermal Annealing (RTA), Metallization Chamber

Spectroscopy

Micro-Raman-Spektroscopy, X-ray photoelectron spectroscopy (XPS), Ultraviolet photoelectron spectroscopy (UPS), Scanning Nanoprobe Auger electron spectroscopy (AES), Sputter-XPS, Time-of-flight Secondary Mass Ion Spectroscopy (Tof-SIMS), Dynamic SIMS, Synchrotron Radiation-XPS (Bessy II)

Diffraction

Low Energy Electron Diffraction (LEED), Reflection High Energy Electron Diffraction (RHEED) equipped with video registration, High Resolution X-ray Diffraction (HR-XRD), X-ray Reflectometry (XRR), Synchrotron Radiation Grazing Incidence X-ray diffraction (GI-XRD) (ESRF) (ANKA) (HasyLab)

Microscopy

Variable Temperature Scanning Tunneling Microscopy (VT-STM), Combined Scanning Tunnelling Microscopy (STM) and Atomic Force Microscopy (AFM), Photoelectron Emission Microscopy (PEEM), Transmission Electron Microscopy (TEM), Dual Focussed Ion Beam – Scanning Electron Microscope (Dual FIB SEM)

Electrical Characterization

Capacitance versus voltage (C-V), Current versus voltage (J-V), Variable temperature - current versus voltage & dielectric relaxation studies (VT-JV & VT-DR), Hall–Device, Charge Carriere Life Time Facility, Conductive AFM

Further methods are available upon request.