Selected Publications - 2007:
1) Atomic - vapour - deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications
M. Lukosius, Ch. Wenger, T. Schroeder, J. Dabrowski, R. Sorge, I. Costina, H.-J. Müssig, S. Pasko*, Ch. Lohe*
IHP Microelectronics, ImTechnologiepark 25, 15236, Frankfurt (Oder), Germany
* AIXTRON AG, Kackertstr. 15-17, 52072, Aachen, Germany
Microelectronic Engineering Vol. 84 2165 (2007)
Sr4Ta2O9 and HfO2 films were prepared on 200 mm TiN/Si(100) substrates by Atomic Vapour Deposition (AVD). Depositions were carried out within a thermal budget of CMOS back end of line. Electrical properties have been investigated in metal-insulator-metal capacitors after sputter deposition of Au top electrodes. Both Sr4Ta2O9 and HfO2 dielectrics show excellent electrical performances. Oxides possess high capacitance densities of 3.5 fF/µm2 (HfO2) and 4.5 fF/µm2 (Sr4Ta2O9) in combination with high voltage linearity (α<100ppm/V2). Sr4Ta2O9 MIM capacitors provide lower leakage currents at 2 V, while HfO2 MIMs offer higher operating voltage values for 10 years lifetime than Sr4Ta2O9 based capacitors. The dielectric breakdown fields of HfO2 (5.8 MV/cm) and Sr4Ta2O9 (3.2 MV/cm) were obtained from I(V) characteristics.