IHP - Innovations for High Performance Microelectronics: High Frequency Device and Technology Development

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The IHP - Innovations for High Performance Microelectronics

invites applications for a position in

High Frequency Device and Technology Development
AZ 3103/07

The IHP consists of approximately 230 research staff, primarily in the area of wireless communications, including SiGe-based technologies, diagnostics, and materials research. We are working in a multidisciplinary environment, spanning materials, process technology, circuits, and systems. The IHP is housed in a state-of-the-art building 55 minutes from Berlin, with ultra-modern facilities. Our innovations are in worldwide demand.

We are seeking a candidate with a Master degree in Electrical Engineering or Physics in the field of High Frequency Device and Technology development. The main tasks will be the development of high frequency devices and its integration into Si technology.

The successful candidate will be highly motivated with good experimental and theoretical skills. Experience in semiconductor device physics and in one or more of the following fields would be an advantage: Silicon IC technology, process integration, electrical characterization.

The position offers a unique opportunity to work at the forefront of semiconductor technology in an upcoming new field. We offer a challenging, multinational environment, with excellent career prospects for highly motivated individuals. You will have the opportunity to establish an international reputation at the forefront of high tech. A PhD degree can be pursued and will be encouraged.

The position will be filled as quickly as possible. Salary will be paid according to the TV-L scale.

Please send your application letter/e-mail including CV, copies of (scanned) certificates, and addresses of at least two referees to:

Dr. Christel Quick

IHP GmbH

Im Technologiepark 25

15236 Frankfurt (Oder)

Germany

Phone: +49 335 5625 330

Fax: +49 335 5625 666

Email: quick@ihp-microelectronics.com

For further information please contact:

Prof. Bernd Tillack