Selected Publications - 2008:
1) Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications
G. Lupina, G. Kozłowski, J. Dabrowski, Ch. Wenger, P. Dudek, P. Zaumseil, G. Lippert, Ch. Walczyk, and H.-J. Müssig
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
APPLIED PHYSICS LETTERS 92, 062906 (2008)
(Received 18 December 2007; accepted 20 January 2008; published online 13 February 2008)
Thin BaHfO3 dielectric films were investigated in view of future dynamic random access memory applications. The dielectric layers were prepared by physical vapor codeposition of BaO and HfO2 onto metallic TiN substrates. Films deposited at 400 °C are amorphous, show low leakage [J(1 V)<10-8 A/cm2] at capacitance equivalent thicknesses (CETs) down to ~2 nm and a dielectric constant of ~23. Rapid thermal annealing of the amorphous BaHfO3 films induces crystallization in the cubic perovskite phase with a dielectric constant of ~38. This k value was observed for films as thin as 8 nm enabling CET value of ~0.9 nm. © 2008 American Institute of Physics. [DOI: 10.1063/1.2842426]
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