7th Meeting of GMM Competence Group “Process control, Inspection and Analytics”
7th Meeting of GMM Competence Group
“Process control, Inspection and Analytics”
IHP has organized on 06.03.2008 the 7th Meeting of GMM Competence Group “Process control, Inspection and Analytics”. The aim of this GMM Competence Group is to establish an open discussion forum in order to facilitate ideas exchange between semiconductor industry, industrial and research equipment producers and research centres. The special focus of this year's event was “Surface analytics”. Scientists from established Semiconductor Fabs (Infineon, Qimonda, X-Fab, Philips, ATMEL, Siltronic), Research Centres (Fraunhofer, IHP) and equipment producers (Cameca, Ion-Tof ) covered in their presentations specific subjects of this topic. This one day meeting provided the participants with an overview of new challenges for surface analysis techniques represented by the continuous scaling to nano-devices. One of the main achievements was the feedback between equipment producers and users. The complexity of the discussed topic is reflected in the talks presented at this meeting:
• "SIMS profile near to surface, implants and thin layers: the first 5 nm"
Dr. Christoph Schnürer-Patschan, Cameca GmbH, Unterschleissheim
• "Shallow Probe: Semiconductor production control of doses and conformity of ultra
shallow implants and other thin layers"
Dr. Ulrich Ehrke, Cameca GmbH, Unterschleissheim
• "Optimization of surface wafer preparation for Hg-C(U) measurements
on epitactically grown Si -layers"
Dr. Johannes Baumgartl, Infineon Technologies Austria AG, Villach, Österreich
• "Characterization of Si and Ge surfaces with and without Self-Assembled Monolayers
using XPS, TXRF und AFM"
Prof. Dr. Bernd Kolbesen, Institut für Anorganische und Analytische Chemie, Universität
Frankfurt/Main
• "Detection and Quantification of thin layers using AES"
Dr. Jörg-Martin Batke, Dr. Rudolf Schaller, Dr. Günther Zoth, Infineon Technologies AG,
Regensburg
• "Röntgen spectrometry with Synchrotron radiation without standard samples"
Dr. Burkhard Beckhoff, Physikalisch-Technische Bundesanstalt, Berlin
• "The use of mechanical profilometry to CMP Process Control"
Wolfgang Höppner, Heike Silz, Sebastian Geisler, IHP GmbH, Frankfurt (Oder)
• "Basics and application of Time-of-Flight Secondary Ion Mass Spectrometry
(TOF-SIMS) in Microelectronics"
Dr. Markus Terhorst, ION-TOF GmbH, Münster
• "The use of TOF-SIMS and AES in surface analysis in a Semiconductor Fab"
Dr. Patrick Rostam-Khani, NXP Semiconductors, Nijmegen, Niederlande