Selected Publications - 2008:
1) Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices
Ch. Wenger a, M. Lukosius a, I. Costina a, R. Sorge a, J. Dabrowski a, H.-J. Müssig a, S. Pasko b, Ch. Lohe b
a IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
b AIXTRON AG, Kackertstr. 15-17, 52072 Aachen, Germany
Microelectronic Engineering Vol. 85, p. 1762-1765 (2008)
HfO2 films were grown by atomic vapour deposition (AVD) on SiO2/Si (100) substrates. The positive shift of the flat band voltage of the HfO2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5 x 1012 cm-2. The interface trap charge density of HfO2/SiO2 stacks can be reduced to 3 x 1011 eV-1 cm-2 near mid gap, by forming gas annealing. The extracted work function of 4.7 eV preferred the use of TiN as metal gate for PMOS transistors. TiN/HfO2/SiO2 gate stacks were integrated into gate-last-formed MOSFET structures. The extracted maximum effective mobility of HfO2 based PMOS transistors is 56 cm2/Vs.
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