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   Research of the Technology Department

 


The activities of the department Technology are focused on the research program "Technology Platform for Wireless and Broadband".

 

This program is focused on high performance and low cost technologies (mainly BiCMOS technologies) for embedded system applications, its implementation, and usage for innovative circuits and system designs.

 

The major directions of the research in this program are technologies with high performance for very high frequencies, low cost technologies for system-on-chip applications, and the provision of technology access for internal and external designers.

 

The research towards high-performance technologies targets high speed SiGe:C HBT´s, including complementary devices for applications at very high frequencies (above 60 GHz and more than 100 GHz).

 

The aim of the research for low-cost solutions is to develop cost effective BiCMOS technologies with additional modules such as RF LDMOS, Flash and passive devices for system-on-chip applications.

 

Access is provided to the 0.25 µm BiCMOS technologies currently available. Runs in IHP´s pilot line start on a regular basis.

 

A new 0.13 µm SiGe:C BiCMOS technology is under development.

 

Selected Projects of this Research Program




print version



06-05-08
7th Workshop
High-Performance SiGe:C BiCMOS (September 17, 2008) and Tutorial IHP Design Kits (September 18-19, 2008)

[more]


15-04-08
European Consortium to push the speed limit of silicon based transistor up to 0.5 TeraHertz[more]


25-03-08
7th Meeting of GMM Competence Group
“Process control, Inspection and Analytics”

IHP has organized on 06.03.2008 the ... [more]


16-11-07
IEEE International Electron Devices Meeting (IEDM 2007)
Washington, DC
December 10-12, 2007 [more]


04-09-07
6th Workshop
High-Performance SiGe BiCMOS (September 10, 2007) and Tutorial IHP Design Kits (September 11-12, 2007)

[more]


30-08-07
Long Term Research Cooperation Between Taiwanese National Nano Device Laboratories and IHP
Frankfurt (Oder)/Hsinchu, August 24th, 2007: Today the National Nano Device Laboratories located in ... [more]