Dielectrics for future Si-based nanoelectronic device
technologies
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Scaling plus successful integration of new materials will be the primary means of Si-based microelectronics industry to pave the way from micro- to nanoelectronics [1]. Among the various materials classes discussed, the potential of engineered dielectric systems to provide cost-effective solutions to many materials problems in microelectronics is generally acknowledged [2]. This is due to the tremendous diversity of solid state phenomena encountered in complex oxide systems [3]. The successful integration of new functional thin-film dielectrics in conventional silicon (Si) processing technology would thus enable the manufacture of new devices of superior performance [4]. Some important examples of potential device applications are given in the top part of the figure. Before, however, the full potential of dielectric materials can be used to improve the performance of integrated circuits (IC`s), many fundamental scientific questions on the physics of thin dielectric films on Si need to be tackled. The middle part of the figure summarizes the fields where substantial research efforts are needed. For example, nowadays the control over the structure as well as the defect chemistry of dielectric films has become an important research goal for all scientists and process engineers working on the integration of dielectrics. For the long-term future, some “hot topics” in modern oxide physics (e.g. spintronics and orbitronics) could even trigger the development of new device concepts.
It is clear that materials research and development in nanotechnology requires the use of state-of-the art equipment. As many lab-based experimental methods are greatly limited, large-scale research facilites (Synchrotrons, Neutron sources etc.) will play an increasingly decisive role to successfully develop new functional materials systems in time. To fully exploit the potential of large scale research facilities in the field of technology - oriented materials science (e.g. research for highly integrated Si-based nanoelectronics), further developments concerning the infrastructure, machine and experimental end stations are needed. Some requirements are listed in the bottom part of the figure.
References
[1] Rainer Waser, Nanoelectronics and Information Technology – Advanced Electronic
Materials and Novel Devices 2nd Edition, Wiley VCH, 2005.
[2] Takashi Hori, Gate Dielectrics and MOS ULSI – Principles, Technologies and Applications,
Springer Series in Electronics and Photonics Volume 34, edited by I.P. Kaminow, W. Engl
and T. Sugano, 1996.
[3] Relva C. Buchanan, Ceramic Materials for Electronics, Marcel Dekker, 2004.
[4] H. Frohlich, Theory of Dielectrics 2nd Edition, Oxford at the Clarendon Press, 1958.
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