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   Technology Platform for Wireless and Broadband
       Communication

 


The goal of this program is to develop value-added technologies, preferably BiCMOS technologies, by the modular extension of industrial CMOS. The focal points in this program are technologies with high performance, low-cost technologies for system-on-chip, and the provision of technology access for internal and external designers.

 

The research towards high-performance technologies targets ultrafast SiGe HBTs, including complementary devices and new device concepts, for applications at frequencies of up to > 100 GHz.

 

The aim of the research for low-cost technologies is to develop BiCMOS technologies with ample performance and low manufacturing costs and to integrate additional modules such as RF LDMOS, Flash and passive devices.

 

IHP’s 0.25 µm and 0.13 µm BiCMOS technologies are available for designers in Europe and throughout the world.

 

A schedule for technological runs in the pilot line in Frankfurt (Oder) can can be found here.

 

Selected Projects of this Research Program




print version



09-02-10
EU project DOTFIVE presents circuits operating up to 650GHz at ISSCC in San Francisco, USA on February 11, 2010 (International Solid-State Circuits Conference).
The chips were designed at University of Wuppertal and fabricated using IHP SiGe technology with highest HBT performance developed within the frame of the project.
[more]


09-10-09
2009 IEEE International Electron Devices Meeting (IEDM)
Hilton Baltimore
Baltimore, MD
December 7 - 9, 2009 [more]


22-06-09
8th Workshop
High-Performance SiGe:C BiCMOS (September 16, 2009) and Tutorial IHP Design Kits (September 17-18, 2009)

[more]


07-04-09
LFoundry and IHP sign cooperation contract
LFoundry to license IHP’s world leading LDMOS process module [more]


[more news]