Publications 2004
Published Papers | Invited Talks | Presentations | Reports | Books | Patents
Published Papers
(1)
Distribution and Properties of Oxide Precipitates in Annealed Nitrogen-doped 300 mm Si Wafers
V.D. Akhmetov, H. Richter, W. Seifert, O. Lysytskiy, R. Wahlich, T. Müller, M. Reiche
European Journal of Applied Physics 27, 159 (2004)
Spatial distribution and properties of oxide were examined in 300 mm nitrogen (N) doped CZ-Si. Experimentally grown materials with N ranging from 1013 cm-3 to 1015 cm-3 were studied by infrared light scattering tomography, scanning infrared microscopy, transmission electron microscopy and electron beam induced current. It was established that an increasing N content improves the uniformity of the radial distribution of precipitates in the bulk of the wafer, the density of precipitates reaching a level of 109 cm-3. The width of the denuded zone varies in the range from 15 µm to 70 µm depending on radial position and N doping level. Electron microscopy revealed lower oxide precipitate densities of about 105 to 108 cm-3. The results are interpreted in terms of existence of agglomerates of nanometer size precipitate nuclei and/or by the defect-induced strain relaxation around the precipitates.
(2)
Effects of Various Ci/Ti and Co/TiN Layer Stacks and the Silicide Rapid Thermal Process Conditions on Cobalt Silicide Formation
S. Buschbaum, O. Fursenko, D. Bolze, D. Wolansky, V. Melnik, J. Nieß, W. Lerch
Microelectronic Engineering 76, 311 (2004)
The effects of cap layer type (Ti or TiN) and its thickness, Co thickness and rapid thermal processing (RTP) temperature on cobalt silicide formation are investigated by a combination of electrical and optical measurements. Various Co/TiN and Co/Ti layer stacks (thicknesses 8-20 nm per layer) were deposited on (100) Si substrates. The first RTP step (RTP1) was performed by isochronal annealing at various temperatures between 400 and 600 °C for 30 s. It was observed that the temperature range for constant sheet resistance (Rs) values after the first RTP step (RTP1 process window) is smaller for the Co/TiN layer stacks than it is for the Co/Ti layer stacks. After the subsequent selective etch step the second RTP step (RTP2) was performed at 800 °C for 30 s. Rs after RTP2 strongly depends on the initial Co thickness and its uniformity for both systems if the RTP1 temperature was above 470 ° C. For the Co/TiN layer stacks the final Rs results are not influenced by the RTP1 temperature or its uniformity (above 470 °C). In this case silicidation is independent of the cap thickness. However, in the Co/Ti system the reactive Ti influences the silicidation process by reducing the amount of available Co in a manner that depends on the RTP1 temperature and the Ti cap thickness.
(3)
Aluminum Gettering in Photvoltaic Silicon
J. Chen, D. Yang, X. Wang, D. Que, M. Kittler
European Physical Journal Applied Physics 27, 119 (2004)
The effect of aluminum gettering on different silicon materials used for solar cells has been investigated by means of microwave photoconductivity decay ( µ -PCD) and electron beam induced current (EBIC). µ -PCD measurement revealed that the lifetime of multicrystalline silicon (mc-Si) with a lower initial lifetime could be increased by high temperature gettering (1000 °C), while that of mc-Si with a higher initial lifetime could not be increased, but was even degraded. EBTC results revealed that no significant improvement of diffusion length was observed in both contaminated and uncontaminated wafers, while 850 °C Al gettering was employed. It is concluded that both the initial material quality and the thermal treatment have influences on the effect of Al gettering. In addition, dislocations with bright EBlC contrast were discovered in annealed mc-Si wafers, the origin of which is discussed.
(4)
Assessing the Performance of Two-Dimensional Dopant Profiling Techniques
N. Duhayon, P. Eyben, M. Fouchier, T. Clarysse, W. Vandervorst, D. Alvarez, S. Schoemann, M. Ciappa, M. Stangoni, W. Fichtner, P. Formanek, M. Kittler, V. Raineri, F. Giannazzo, D. Goghero, Y. Rosenwaks, R. Shikler, S. Saraf, S. Sadewasser, N. Barreau, T. Glatzel, M. Verheijen, S.A.M. Mentink, M. von Sprekelsen, T. Maltezopoulos, R. Wiesendanger, L. Hellemans
Journal of Vacuum Science & Technology B 22(1), 385 (2004)
This article discusses the results obtained from an extensive comparison set up between nine different European laboratories using different two-dimensional (2D) dopant profiling techniques (SCM, SSRM, KPFM, SEM, and electron holography). This study was done within the framework of a European project (HERCULAS), which is focused on the improvement of 2D-profiling tools. Different structures (staircase calibration samples, bipolar transistor, junctions) were used. By comparing the results for the different techniques, more insight is achieved into their strong and weak points and progress is made for each of these techniques concerning sample preparation, dynamic range, junction delineation, modeling, and quantification. Similar results were achieved for similar techniques. However, when comparing the results achieved with different techniques differences are noted.
(5)
Electron Holography on Silicon Microstructures: A Comparison with Scanning Probe Techniques
P. Formanek, M. Kittler
Journal of Physics: Condensed Matter 16, 193 (2004)
Two-dimensional dopant profiling is being strongly demanded by the semiconductor industry, and several techniques have been developed in recent years. We compare the performance of electron holography in a transmission electron microscope with other microscopic techniques. The advantages of electron holography are the high spatial resolution of a few nanometres and the direct interpretability of the measured two-dimensional electrostatic potential requiring no simulation. We demonstrate the detection of a 0.5 monolayer of boron in silicon and silicon germanium. We image a 35 nm wide potential dip of 25 mV in a boron-doped specimen, corresponding to detection of a 2 * 10 17 B cm-3 dip between peaks of 2 * 1018 B cm-3. Moreover, we illustrate directly by electron holography the existence of a potential barrier at NiSi2 precipitates in silicon, which was predicted earlier by the electron-beam-induced current technique.
(6)
Development of Spectroscopic Ellipsometry as in-line Control for Co SALICIDE Process
O. Fursenko, J. Bauer, A. Goryachko, D. Bolze, P. Zaumseil, D. Krüger, D. Wolansky, E. Bugiel, B. Tillack
Thin Solid Films 450, 248 (2004)
This work is aimed at in-line thickness and composition analysis of Co silicides by spectroscopic ellipsometry (SE). The silicides were formed by a two-step rapid thermal annealing (RTA) in nitrogen at different temperatures from initial Co layers deposited on Si (100) substrates and capped by a protective layer of TiN. The optical constants of Co, CoSi and CoSi films 2 were calculated in the wavelength range of 240 x 800 nm, describing the optical dispersions by harmonic oscillator models. These models were applied for in-line thickness and composition control of the main steps of Co SALICIDE process. The effects of the first RTA temperature and initial Co thickness on formation of silicide phases and their thickness were evaluated. For phase identification, additional methods (sheet resistance, Auger electron spectroscopy and X-ray diffraction) were used. Finally , the suitability of SE for layer thickness uniformity evaluation was demonstrated for the main steps of Co SALICIDE process.
(7)
Raman Invesitgation of Stress and Phase Transformation Induced in Silicon by Identation at High Temperatures
S. Kouteva-Arguirova, V. Orlov, W. Seifert, J. Reif, H. Richter
European Physics Journal - Applied Physics 27(1-3), 279 (2004)
To study the material deterioration at and around the support contacts during processing of silicon wafers, we used Rockwell indentation at elevated temperatures as a model. Cz-silicon was subjected for 30 s to a load of 1.5 N, at temperatures between 70 °C and 660 °C. The resulting morphology was checked by scanning electron microscopy. Micro Raman spectroscopy was used to monitor residual stress and the occurrence of silicon polymorphs. We found strong compressive stress inside the indented area, with a dramatic drop and reversal to tensile stress at its boundary. The morphology shows a top hat profile, covered with a mesh of vein-like structures. Crystalline phases such as Si-III, Si-IV, Si-XII, and amorphous silicon are observed. Outside the spot, the situation depends strongly on the indentation temperature. Up to 400 °C the material appears practically unstressed, with a high density of relaxation cracks. At 500 °C and 600 °C a transition is found from strong tensile stress at the boundary to another region of compressive stress extending over more than 40 µm, associated with a significantly lower crack density. At still higher temperature (660 °C) the crack density tends to zero, and comparably weak stress seams to oscillate between compressive and tensile.
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Baseband Processor for IEEE 802.11a Standard with embedded BIST
M. Krstic, K. Maharatna, A. Troya, E. Grass, U. Jagdhold
Facta Universitatis, Series: Electronics and Energetics 17, 231 (2004)
In this paper results of an IEEE 802.11a compliant low-power baseband processor implementation are presented. The detailed structure of the baseband processor and its constituent blocks is given. A design for testability strategy based on Built-In Self-Test (BIST) is proposed. Finally, implementational results and power estimation are reported.
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Characterization of Ge Gradients in SiGe HBTs by AES Depth Profile Simulation
D. Krüger, A. Penkov, Y. Yamamoto, A. Goryachko, B. Tillack
Applied Surface Science 224 (1-4), 51 (2004)
We show that AES depth profiling extended by a simple profile simulation technique allows characterization of details in the Ge concentration gradients for SiGe hetero-bipolar transistors (HBTs). Using the mixing-roughness-information depth (MRI) model to simulate the experimental data allows us to reveal concentration steps with a precision of about +or-2 at.% and small deviations from linear concentration gradients. The obtainable high lateral resolution of AES facilitates an application for process optimization and control in small microelectronic structures.
(10)
Diffusion and Segregation of Shallow As and Sb Junctions in Silicon
D. Krüger, H. Rücker, B. Heinemann, V. Melnik, R. Kurps, D. Bolze
Journal of Vacuum Science and Technology 22(1), 455 (2004)
The diffusion and segregation of Sb and As is investigated after low-energy implantation and annealing, both rapid thermal processing and furnace annealing. We demonstrate that the absence of transient enhanced diffusion effects for Sb facilitates the fabrication of significantly shallower junctions with less dopant segregation to the surface. It is shown that Sb implantation can be used to fabricate low-resistivity ultrashallow junctions suitable for source/drain extensions in n-type metal-oxide-semiconductor field effect transistors.
(11)
Oxide Formation During Ion Bombardement of Small Silicon Structures
D. Krüger, P. Formanek, E. Pippel, J. Woltersdorf, E. Bugiel, R. Kurps, G. Weidner
Journal of Vacuum Science and Technology B 22 (3), 1179 (2004)
The kinetics of high dose oxygen implantation and of surface sputtering in silicon are investigated by atomic force microscopy, transmission electron microscopy, transmission electron holography, and electron energy-loss spectroscopy. The implantation was performed into accurately defined submicrometer areas. The behavior of the erosion rate as a function of the implantation dose proved to be nonmonotonic. After native oxide sputtering, a period dominated by (i) implantation of oxygen and (ii) induced oxide formation with volume increase takes place, causing a maximum surface step around the bombarded area of about 1.1 to 1.3 nm at bombardment doses below 2*1016 O+ cm-2 . Subsequently, higher doses cause a sputtering of the surface with a sputter yield of about 0.32 Si atoms/O+. Electron holography revealed the double layer character of the implanted region, and electron energy-loss spectroscopy, especially near the relevant Si-L23 ionization edge, identified these two layers which are (i) amorphous silicon oxide and (ii) amorphized silicon. Electron energy-loss line scans show the oxygen distribution inside the implanted areas with a lateral resolution of about 1-2 nm. It was found that the interface between the oxidized layer and the amorphized silicon sharpens with increasing implantation dose.
(12)
Some Open Issues on Internetworking for the Next Generation
P. Langendörfer, V. Tsaoussidis
Computer Communications 27 (10), 908 (2004)
In this survey we focus on open issues of the wireless Internet. Our main intention is to elaborate what has to be done to integrate mobile devices in the Internet in such way that users do not experience any difference between wireless and fixed connections. We concentrate on the layers on top of IP, i.e. transport protocols, middleware platforms and applications. We provide an overview of existing solutions and a discussion of open issues and promising research directions is given for each of these fields.
(13)
Solid State Reaction between Pr and SiO2 Studied by Photoelectron Spectroscopy and ab initio Calculations
G. Lupina, J. Dabrowski, P. Formanek, D. Schmeißer, R. Sorge, C. Wenger, P. Zaumseil, H.-J. Müssig
Materials Science in Semiconductor Processing 7 (4-6), 215 (2004)
We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (~0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.
(14)
A 64-Point Fourier Transform Chip for High Speed Wireless LAN Application Using OFDM
K. Maharatna, E. Grass, U. Jagdhold
IEEE Journal of Solid State Circuits 39 (3), 484 (2004)
In this paper, we present a novel fixed-point 16-bit word-width 64-point FFT/IFFT processor developed primarily for the application in an OFDM-based IEEE 802.11a wireless LAN baseband processor. The 64-point FFT is realized by decomposing it into a two-dimensional structure of 8-point FFTs. This approach reduces the number of required complex multiplications compared to the conventional radix-2 64-point FFT algorithm. The complex multiplication operations are realized using shift-and-add operations. Thus, the processor does not use a two-input digital multiplier. It also does not need any RAM or ROM for internal storage of coefficients. The proposed 64-point FFT/IFFT processor has been fabricated and tested successfully using our in-house 0.25- µm BiCMOS technology. The core area of this chip is 6.8 mm2. The average dynamic power consumption is 41 mW at 20 MHz operating frequency and 1.8 V supply voltage. The processor completes one parallel-to-parallel (i.e., when all input data are available in parallel and all output data are generated in parallel) 64-point FFT computation in 23 cycles. These features show that though it has been developed primarily for application in the IEEE 802.11a standard, it can be used for any application that requires fast operation as well as low power consumption.
(15)
Fast Nondestructive Technique to Determine the Content of Components in a Strain-Compensated Crystalline Ternary Alloy
A.Y. Nikulin, P. Zaumseil
Journal of Applied Physics 95, 5249 (2004)
The x-ray Bragg diffraction intensity profile for a model strain-compensated structure consisting of a thin SiGe alloy layer grown on a thick Si substrate is derived using a Laplace transform interpretation of the kinematical approximation of x-ray diffraction theory. It is shown that in the case of fully strain-compensated crystals a simplified x-ray phase-retrieval technique can be applied to determine the alloy composition from this x-ray diffraction data. An experimental intensity profile from an almost perfectly unstrained SiGe:C/Si structure is analyzed using this method.
(16)
Stability and Electronic Properties of Silicates in the System SiO2-Pr2O3-Si(001)
D. Schmeißer, H.-J. Müssig
Journal of Physics Condensed Matter 16, 153 (2004)
Pr2O3 is one of the most promising hetero-oxides that are the candidates of choice to replace SiO2 as the gate dielectric material for sub-0.1 µm CMOS technology. In order to enable process integration, however, hetero-oxides require substantial characterization. In particular, the basic interaction mechanisms at the interface to the silicon substrate are the key issues. A solid knowledge of these mechanisms is required to address reliability arguments. The challenges in material science are to understand the chemical bonding of the hetero-oxides and Si on a microscopic scale. We report on the specific variations in the electronic structure which are evident in the valence band features around resonant excitation at the Pr4d threshold. We also determine the valance band discontinuities at the Pr2O3/Si(001) interface and follow the changes in the surface potentials to develop a band scheme, a prerequisite to understanding the properties of charge transport across that interface.
(17)
Pr2O3 / Si(001) Interface Reactions and Stability
D. Schmeißer, J. Dabrowski, H.-J. Müssig
Materials Science and Engineering B 109, 30 (2004)
We show that an interfacial silicate is formed in a natural way between Si(001) and the deposited Pr2O3 film if a sufficient amount of oxygen is provided during deposition, as during electron beam evaporation from Pr6O11 source. We provide arguments from results of ab initio calculations and we present a ternary phase diagram of the Pr-O-Si system obtained for epitaxial films from non-destructive depth profiling data acquired by synchrotron radiation and photo-electron spectroscopy (SR-PES) at the undulator beam line U49/2-PGM2. The composition of the interfacial layer is (Pr2O3)(SiO)x(SiO2)y with x+y between 2 and 6 and depends on the growth conditions and distance from the substrate. No interfacial SiO2 and no interfacial silicide is formed during growth. The ternary phase diagram indicates that this non-stoichiometric pseudobinary alloy is stable on Si up to high temperatures, without phase separation into Pr2O3 and SiO2. Therefore, a complete re-engineering of the CMOS process may be not necessary.
(18)
Silicate Layer Formation at Pr2O3 /Si(001) Interfaces
D. Schmeißer, H.-J. Müssig, J. Dabrowski
Applied Physics Letters 85, 88 (2004)
We studied Pr2O3/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1×10-8 mbar consists of a mixed Si-Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal-oxide-semiconductor technologies.
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Pr4f Occupancy and VB/CB Band Offsets of Pr2O3 at the Interface to Si (001) and SiC (0001) Surfaces
D. Schmeißer, H.-J. Müssig
Materials Science in Semiconductor Processing 7, 221 (2004)
Resonant photoelectron spectroscopy (PES) at the Pr4d and O1 s absorption edges is used to study the electronic properties at the interface of epitaxially grown Pr2O3on Si(001). In the electronic structure of bulk Pr2O3, the valence band (VB) states are predominant of Pr6s and O2p atomic parentage. The contribution of Pr4f states is identified from the strong increase of the VB features at the Pr4d resonances. The data at the O1s edge are caused by Raman scattering and resonant Auger decay and reflect the existence of charge transfer (CT) complexes. These complexes are the consequence of a mixed valency caused by ligand-to-Pr4f charge transfer states. The decrease of their intensity is attributed to an increase in covalent bandwidth between the ligand (O2p, Si3p) and Pr4f states. The CT complexes, originally localized now, become broadened and form gap states which fill the gap towards a metallic density of states. The metallic phase may be hindered upon alloying with SiO2 or other oxides.
(20)
Structure and Thickness-dependent Lattice Parameters of Ultrathin Epitaxial Pr2O3 Films on Si(001) Studied by SR-GIXRD
T. Schröder, T.-L. Lee, J. Zegenhagen, C. Wenger, P. Zaumseil, H.-J. Müssig
Applied Physics Letters 85 (7), 1229 (2004)
Pr2O3 grown heteroepitaxially on Si(001) is a promising candidate for applications as a high-k dielectric in future silicon-based microelectronics devices. The technologically important thickness range from 1 to 10 nm has been investigated by synchrotron radiation-grazing incidence x-ray diffraction. The oxide film grows as cubic Pr2O3 phase with its (101) plane on the Si (001) substrate in form of two orthogonal rotation domains. Monitoring the evolution of the oxide unit-cell lattice parameters as a function of film thickness from 1 to 10 nm, the transition from almost perfect pseudomorphism to bulk values is detected.
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Formation of Heavily P-doped Si Epitaxial Films on Si(100) by Multiple Atomic-Layer Doping Technique.
Y. Shimamune, M. Sakuraba, J. Murota, B. Tillack
Applied Surface Science 224 (1-4), 202 (2004)
Phosphorus (P) incorporation process during Si epitaxial growth by SiH4 reaction in ultraclean low-pressure chemical vapor deposition (CVD) and the electrical characteristics of the heavily P-doped epitaxial Si film on Si(100) have been investigated. Si layer growth on the P layer formed on Si(100) at 500 °C at SiH4 partial pressure of 6 Pa is observed when the surface P amount becomes below 7*1014 cm-2. It is also found that about 1.1*1014 cm-2 P atoms segregate onto the Si surface and the other desorbs. On the other hand, by lowering the Si growth temperature to 450 °C and increase in the SiH4 partial pressure to 220 Pa, P incorporation occurs and about 1.5*1014 cm-2 P atoms are buried at the initial position without segregation. By using the multiple atomic-layer doping technique, very low-resistive heavily P-doped epitaxial Si film on Si(100) can be formed with effective suppression of the electrically inactive P formation.
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High Performance SiGe:C HBTs Using Atomic Layer Base Doping
B. Tillack, Y. Yamamoto, D. Knoll, B. Heinemann, P. Schley, B. Senapati, D. Krüger
Applied Surface Science 224, 55 (2004)
We applied atomic layer processing for base doping of high performance SiGe:C heterojunction bipolar transistors (HBTs) fabricated within a 0.25 mm BiCMOS technology. B atomic layer doping (ALD) was performed at 400 °C during an interruption of the epitaxial SiGe:C base layer deposition. Atomic level dopant location and dose control was achieved. Electrical properties of atomic layer and box-profile doped (standard) HBTs were compared, showing peak fT and fmax for the ALD HBTof 113 and 127 GHz, and of 108 and 123 GHz for the standard HBT, respectively. The internal base sheet resistances (RSBi) for the ALD and standard HBTs were comparable, indicating very similar active B dose for both doping variants. The HBT results demonstrate the capability of atomic layer processing for doping of advanced devices, with critical requirements for dose and location control.
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Recombination Activity and Electrical Levels of Dislocations in p-type SiGe Structures: Impact of Copper Contamination and Hydrogenation
O.F. Vyvenko, M. Kittler, W. Seifert
J. Appl. Phys. 96 (11), 6425 (2004)
The impact of copper contamination and subsequent hydrogenation on recombination activity and hole-trap levels of misfit dislocations were investigated in p-type Si/Si0.98Ge0.02/Si structures. In the as-grown (noncontaminated) samples, dislocations were found to exhibit very low recombination activity, detectable with the electron-beam-induced current technique only at low temperatures. Deep-level transient spectroscopy revealed a dislocation-related hole-trap level at Et = Ev + 0.2 eV. The position of the observed level is close to the theoretically predicted hole-trap state of the intrinsic stacking fault of a dissociated dislocation. Contamination with a low copper concentration [5 (parts per 109) ppb] gave rise to a large increase of the recombination activity of the dislocations and to the appearance of another dislocation-related defect level at Et = Ev + 0.32 eV. Hydrogenation of the samples by a treatment with an acid solution and subsequent reverse-bias anneal at 380 K resulted in the evolution of the levels of substitutional copper and its complexes with hydrogen.
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First Investigation of MIM Capacitors Using Pr2O3 Dielectrics
C. Wenger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.-J. Müssig
Materials Science in Semiconductor Processing 7 (4-6), 227 (2004)
Metal-insulator-metal (MIM) capacitors with Pr2O3 as high-k material have been investigated for the first time. We varied the thickness of the Pr2O3 layers as well as the bottom electrode material. The layers are characterised using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS). Preliminary information on the interaction of water with the films was obtained from XPS and ab initio pseudopotential calculations. The electrical characterisation shows that Pr2O3 MIM capacitors can provide higher capacitance densities than Si3N4 MIM capacitors while still maintaining comparable voltage coefficients of capacitance. The Pr2O3 dielectric material seems to be suitable for use in silicon RF applications.
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Circuit Applications of High-Performance SiGe:C HBTs Integrated in BiCMOS Technology
W. Winkler, J. Borngräber, B. Heinemann, H. Rücker, R. Barth, J. Bauer, D. Bolze, E. Bugiel, J. Drews, K.-E. Ehwald, T. Grabolla, U. Haak, W. Höppner, D. Knoll, D. Krüger, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, P. Schley, D. Schmidt, R. Scholz, B. Tillack, D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. Zaumseil
Applied Surface Science 224 (1-4), 297(2004)
Carbon-doped SiGe (SiGe:C) bipolar devices have been developed and integrated in to a 0.25 µm CMOS platform. The resulting SiGe:C BiCMOS technology offers a wide spectrum of active and passive devices for wireless and wired communication systems. A high-performance variant of the bipolar transistor has been derived from the standard transistors by reduction of some transistor dimensions. With these alterations, fT and fmax of the bipolar transistors reaches 120 and 140 GHz, respectively. Circuit applications of the devices are demonstrated. Static and dynamic divider circuits have a maximum input frequency of 62 and 72 GHz, respectively. Integrated LC oscillators with frequencies up to 60 GHz are also demonstrated.
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Carbon and Boron in Heavily Doped SiGe:C / Si Epilayers Studied by FTIR
V.D. Akhmetov, O. Lysytskiy, Y. Yamamoto, H. Richter
Electrochemical Society Proceedings Vol. 2004-07, 269 (2004)
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Nitrogen in Thin Silicon Wafers Determined by Infrared Spectroscopy
V.D. Akhmetov, O. Lysytskiy, H. Richter
Electrochemical Society Proceedings Vol. 2004-05, 109 (2004)
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HICUM Modeling of SiGe-HBTs Fabricated in Wafer Bonded SOI Substrates
A. Chakravorty, B. Senapati, G. Dalapati, R. Garg, C.K. Maiti, G.A. Armstrong, H.S. Gamble, P. Ashburn and H.A.W. El Mubarek
Proc. International Conference on Computers and Devices for Communication, 42 (2004)
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Accurate Modeling of SiGe:C HBTs using Adaptive Neuro-Fuzzy Inference System
A. Chakravorty, R.F. Scholz, B. Senapati, D. Knoll, A. Fox, R. Garg, C.K. Maiti
Proc. ISTDM, 264 (2004)
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Electrical Deactivation and Diffusion of Boron in Preamorphized Ultrashallow Junctions: Interstitial Transport and F co-implant Control
B. Colombeau, A.J. Smith, N.E.B. Cowern, W. Lerch, S. Paul, B.J. Pawlak, F. Christiano, X. Hebras, D. Bolze, C. Ortiz, P. Pichler
Technical Digest IEDM, 971 (2004)
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Preface
J. Dabrowski, H.-J. Müssig
Materials Science in Semiconductor Processing 7 (4-6), 165 (2004)
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Ab Initio Study of Pr Oxides for CMOS Technology
J. Dabrowski, V. Zavodinsky
Proc. NIC Symposium, 171 (2004)
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Transistors and Atoms
J. Dabrowski, H.-J. Müssig, E.R. Weber, W. Schröter
Challenges in Process Simulation / ed. by J. Dabrowski, E.R. Weber, Berlin, Springer Verlag, 1-38 (2004)
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Model-driven Design of the WIN Platform
J. deMeer
Proc. ICSSEA, ISSN: 1637-5033, Vol. 3 (2004)
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High-Level Behavioral SDL Model for the IEEE 802.15.3. MAC Protocol
D. Dietterle, I. Babanskaja, K. Dombrowski, R. Kraemer
Proc. WWIC 2004, Febr. 05-07, 2004, Frankfurt (Oder), Germany. - Berlin, Springer, 2004, p.165
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Mapping of High-Level SDL Models to Efficient Implementations for TinyOS
D. Dietterle, J. Ryman, K. Dombrowski, R. Kraemer
Proc. EUROMICRO Symposium on Digital System Design, IEEE Computer Society, 402 (2004)
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A Two Mask Complementary LDMOS Module Integrated in a 0.25 µm SiGe:C BiCMOS Platform
K.-E. Ehwald, A. Fischer, F. Fürnhammer, W. Winkler, B. Senapati, R. Barth, D. Bolze, B. Heinemann, D. Knoll, H. Rücker, D. Schmidt, I. Shevchenko, R. Sorge, H.-E. Wulf
Proc. ESSDERC, 121 (2004)
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Bluetooth Indoor Localization System
G. Fischer, B. Dietrich, F. Winkler
Proc. 1st Workshop on Positioning, Navigation and Communication 2004, Hannoversche Beiträge zur Nachrichtentechnik, 01,147 (2004)
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Cost-Effective Integration of an FN-programmed Embedded Flash Memory into a 0.25 µm RF-BiCMOS Technology
A. Fox, K.-E. Ehwald, P. Schley, R. Barth, S. Marschmeyer, V.E. Stikanov, A. Gromovyy, A. Hudyryev
Proc. International Conference on Microelectronics, 463 (2004)
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Spectroscopic Ellipsometry for In-Line Process Control of SiGe:C HBT Technology
O. Fursenko, J. Bauer, P. Zaumseil, D. Krüger, A. Goryachko, Y. Yamamoto, K. Köpke, B. Tillack
Proc. ISTDM, 53 (2004)
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A DC - 10 GHz Amplifier With Digital Offset Correction
H. Gustat
Proc. ISTDM, 73 (2004)
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A Fully-Integrated Low-Power Low-Jitter Clock Synthesizer with 1.2 GHz Tuning Range in SiGe:C BiCMOS
H. Gustat, F. Herzel, I. Shevchenko
Proc. ISTDM, 270 (2004)
(43)
Complementary SiGe BiCMOS
B. Heinemann, J. Drews, D. Knoll, R. Kurps, S. Marschmeyer, H. Rücker, W. Winkler, Y. Yamamoto
Electrochemical Society Proc. SiGe: Materials, Processing, and Devices : The 1st International Symposium, Vol. 2004-07, 25 (2004)
(44)
A Low-Parasitic Collector Construction for High-Speed SiGe:C HBTs
B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, T. Grabolla, U. Haak, W. Höppner, D. Knoll, B. Kuck, R. Kurps, K. Köpke, S. Marschmeyer, H.H. Richter, H. Rücker, P. Schley, D. Schmidt, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto
Technical Digest IEDM, 251 (2004)
(45)
Jitter and Phase-Noise in Oscillators and Phase-Locked Loops
F. Herzel, W. Winkler, J. Borngräber
Proc. SPIE, Fluctuations and Noise, Vol. 5473 (2004)
(46)
Standardization of Defect Characterization Technique in Annealed CZ Si
N. Inoue, K. Moriya, K. Kashima, R. Takeda, V. Akhmetov, O. Lysytskiy, and K. Nakashima
Proc. 4th International Symposium on Advanced Science and Technology of Silicon Materials, 123 (2004)
(47)
Kristallines Si für Solarzellen: Status und Herausforderungen
M. Kittler
Abhandlungen der Leibniz-Sozietät, Vol. 15, 69 (2004)
(48)
Silicon-based Light Emission After Ion Implantation
M. Kittler, T. Arguirov, W. Seifert
Proc. SPIE, Optoelectronic Integration on Silicon, Vol. 5357,164 (2004)
(49)
Die minimal erzielbare Rekombinationsaktivität von Versetzungen in Silicium: Schlussfolgerungen für Solarzellen und für perspektivische auf Si basierende Lichtemitter
M. Kittler, W. Seifert
Freiberger Siliciumtage 2003, in: Freiberger Forschungshefte: Werkstofftechnologie, B 327, 89, (2004)
(50)
A Modular, Low-Cost SiGe:C BiCMOS Process Featuring High-FT and High-BV CEO Transistors
D. Knoll, B. Heinemann, R. Barth, K. Blum, J. Borngräber, J. Drews, K.-E. Ehwald, G. Fischer, A. Fox, T. Grabolla, U. Haak, W. Höppner, F. Korndörfer, B. Kuck, S. Marschmeyer, H.H. Richter, H. Rücker, P. Schley, D. Schmidt, R.F. Scholz, B. Senapati, B. Tillack, W. Winkler, D. Wolansky, C. Wolf, H.-E. Wulf, Y. Yamamoto, P. Zaumseil
Proc. BCTM 241, (2004)
(51)
Remote Operations: A Middleware and Distributed Systems Architecture for Satellite On-Board Wireless Communication
R. Kraemer, K. Dombrowski, D. Dietterle, P. Langendörfer, M. Methfessel
Proc. Data Systems in Aerospace, Session 3B (2004)
(52)
GALS Baseband Processor for WLAN
M. Krstic, E. Grass
Proc. 4thACiD-WG Workshop (2004)
(53)
GALSification of IEEE 802.11a Baseband Processor
M. Krstic, E. Grass
Proc. 14th International Workshop on Power And Timing Modeling, Optimization and Simulation, Springer Verlag, LNCS Series 3254, 258 (2004)
(54)
A Location Aware Revocation Approach
D. Kulikowski, P. Langendörfer, K. Piotrowski
Informatik, Bd. 2, GI-LNI (2004)
(55)
Plasma - A Middleware for Location-Based Services: Design, Implementations and Lessons Learned
P. Langendörfer, O. Maye, Z. Dyka, R. Sorge, R. Winkler, R. Kraemer,
Middleware for Communication, John Wiley & Sons, 305 (2004)
(56)
PLASMADS: Smart Mobiles Meet Intelligent Environments
P. Langendörfer, H. Maass, T. Falck
Proc. 4th Workshop on Applications and Services in Wireless Networks, IEEE Press (2004)
(57)
A 16-Bit CORDIC Rotator for High-Speed Wireless LAN
K. Maharatna, A. Troya, S. Banerjee, E. Grass, M. Krstic
Proc. IEEE PIMRC (2004)
(58)
Virtually Scaling-Free Adaptive CORDIC Rotator
K. Maharatna, A. Troya, S. Banerjee, E. Grass
Proc. of IEEE Computers & Digital Techniques, Vol. 151, no. 6 (2004)
(59)
A Cordic Like Processor for Computation of Arctangent and Absolute Magnitude of a Vector
K. Maharatna, A. Troya, M. Krstic, E. Grass, U. Jagdhold
Proc. International Symposium on Circuits and Systems, Vol. II, 713 (2004)
(60)
Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with Thermal SiO2
H.-J. Müssig, J. Dabrowski, C. Wenger, G. Lupina, R. Sorge, P. Formanek, P. Zaumseil, D. Schmeißer
Materials Research Society Symposium Vol. 811, 253 (2004)
(61)
High-k Dielectrics: The Example of Pr2O3
H.-J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky
Challenges in Process Simulation, Springer Verlag Berlin, 259 (2004)
(62)
Applying Position Prediction as a Means for Performance-Tuning in Location-Aware Platforms
A. Post, P. Langendörfer, R. Kraemer
Proc. 1st Workshop on Positioning, Navigation and Communication, Hannoversche Beiträge zur Nachrichtentechnik, Shaker Verlag,179 (2004)
(63)
Moneta: An Anonymity Providing Lightweight Payment System for Mobile Devices
K. Piotrowski, P. Langendörfer, D. Kulikowski
Proc. 2nd International Workshop for Technology, Economy, Social and Legal Aspects of Virtual Goods (2004)
(64)
Ensuring Anonymity in e-commerce Systems Using a Hidden Identity Approach: Discussion of Problems and Solutions
K. Piotrowski, P. Langendörfer, O. Maye
Proc. 7th International Conference on Electronic Commerce Research (2004)
(65)
SiGe HBT Design for High-Frequency Applications
H. Rücker, B. Heinemann, R. Barth, D. Knoll, P. Schley, R. Scholz, B. Tillack, W. Winkler
Proc. ISTDM, 61 (2004)
(66)
Advances in SiGe HBT Technology in Europe
H. Rücker, W. Winkler
Proc. Compound Semiconductor IC Symposium, 13 (2004)
(67)
Integration of High-Performance SiGe:C HBTs with Thin-Film SOI CMOS
H. Rücker, B. Heinemann, R. Barth, D. Bolze, J. Drews, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, S. Marschmeyer, N. Mohapatra, H.H. Richter, P. Schley, D. Schmidt, B. Tillack, G. Weidner, D. Wolansky, H.-E. Wulf, Y. Yamamoto
Technical Digest IEDM, 239 (2004)
(68)
The System Behavioral Model of IEEE 802.15.3 Mac Protocol - Design and Profiling
J. Ryman, D. Dietterle, K. Dombrowski, P. Bubacz
Proc. 2nd International Workshop on Discrete-Event System Design (2004)
(69)
Analysis of Microwave Noise Sources in 150 GHz SiGe HBTs
P. Sakalas, M. Schröter, R.F. Scholz, H. Jiang, M. Racanelli
IEEE RFIC Digest, 291 (2004)
(70)
A 1 GHz AGC Amplifier in BiCMOS with 3µm Settling-Time for 802.11a WLAN
K. Schmalz
Proc. IEEE Norchip, 289 (2004)
(71)
Advanced Technique for Broadband on-Wafer RF Device Characterization
R.F. Scholz, F. Korndörfer, B. Senapati, A. Rumiantsev
63rd ARFTG Conference Digest, On Wafer Characterization, 83 (2004)
(72)
Macro Model of Power RF LDMOSFET
B. Senapati, K.-E. Ehwald, I. Shevchenko, F. Fürnhammer
Proc. International Conference on Communications, Devices and Intelligent Systems, 23 (2004)
(73)
Application of the VBIC Model for SiGe:C Heterojunction Transistors
B. Senapati, R.F. Scholz, D. Knoll, B. Heinemann, A. Chakravorty
Proc. International Conference on Mixed Design of Integrated Circuits and Systems, 94 (2004)
(74)
Self-Consistent Characterization of Gate Controlled Diodes for CMOS Technology Monitoring
R. Sorge, P. Schley, K.-E. Ehwald
Proc. ESSDERC, 389 (2004)
(75)
Modular Processor: A Flexible Library of ASIC Modules
Z. Stamenkovic, G. Panic, U. Jagdhold, H. Frankenfeldt, K. Tittelbach-Helmrich, G. Schoof, R. Kraemer
Proc. IASTED International Conference on Applied Simulation and
Modelling, Acta Press, 428 (2004)
(76)
Atomic Level Control of SiGE Epitaxy and Doping
B. Tillack, Y. Yamamoto, J. Murota
Proc. SiGe: Materials, Processing, and Devices : Proceedings of the 1st International Symposium, Honolulu, ECS Vol. 2004-07, 803 (2004)
(77)
A 117 GHz LC-Oscillator in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, B. Heinemann
Proc. ISTDM, 71 (2004)
(78)
LC-Oscillators Above 100 GHz in Silicon-Based Technology
W. Winkler, J. Borngräber, B. Heinemann
Proc. ESSCIRC, 131 (2004)
(79)
High-Frequency Low-Noise Amplifiers and Low-Jitter Oscillators in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, F. Herzel, B. Heinemann, R. Scholz
Proc. SPIE Fluctuations and Noise, Vol. 5470, 185 (2004)
(80)
60 GHz Transceiver Circuits in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, F. Herzel, H. Gustat, B. Heinemann, F. Korndörfer
Proc. ESSCIRC, 83 (2004)
Invited Talks
(1)
Determination of Optical Constants Using Swing Curves
J. Bauer, U. Haak, G. Drescher
Lithography Workshop, Pommelsbrunn, September 17-19, 2004, Germany
(2)
Mobile Application Patterns - Real Time or Ubiquity?
J. deMeer
UML/Java Workshop für Embedded und Real-time Systeme, TFH Berlin, July 29, 2004, Germany
(3)
Presentations of the IHP PLASMA Platform
J. deMeer, R. Kraemer
Visit of the Middleware Research Labs - Toronto, Montreal, Nashville, March 27 - April 4, 2004, Canada and USA
(4)
MEDman - Ubiquitous Medical Assistance
J. deMeer
EUREKA MEDEA+ Board Paris, May 25 and June 3, 2004, France
(5)
Mobile Nutzung von Sensornetzwerken auf der PLASMA-Plattform
J. deMeer, P. Langendörfer
Ringvorlesung des Instituts für Informatik und Gesellschaft der Universität Freiburg (Breisgau), June 28, 2004, Germany
(6)
Mobile Nutzung von Sensornetzwerken auf der PLASMA-Plattform
J. deMeer, P. Langendörfer
Colloquium des Fachbereichs Informatik der Universität Passau, June 29, 2004, Germany
(7)
Analog Design Challenges in Ultrawide-Band Technology
B. Dietrich
International Union of Radio Science, Landesausschuss in der Bundesrepublik Deutschland Kleinheubacher Tagung Miltenberg, September 24, 2004, Germany
(8)
Complementary SiGe BiCMOS
B. Heinemann, J. Drews, D. Knoll, R. Kurps, S. Marschmeyer, H. Rücker, W. Winkler, Y. Yamamoto
SiGe: Materials, Processing, and Devices : The 1st International Symposium, Honolulu, October 03-08, 2004, Hawaii, USA
(9)
BiCMOS Integration of High-Speed SiGe:C HBTs
B. Heinemann, H. Rücker
Workshop Advances in Modeling and Simulation of Semiconductor Devices, Berlin, July 12-16, 2004, Germany
(10)
Silicon-based Light Emission After Ion Implantation: Role of Defects and of Crystalline Perfection
M. Kittler
10th Internat. Conf. on "Extended Defects in Semiconductors" EDS 2004, Moscow, September 2004, Russia
(11)
Si-basierte Lichtemitter für die On-chip-Datenübertragung
M. Kittler
FhG Inst. für Photonische Mikrosysteme, Dresden, October 7 2004, Germany
(12)
Energy Efficient Middleware Design in Support of User Privacy
P. Langendörfer
Panel Discussion at 4th Workshop on Applications and Services in Wireless Networks, Boston, August 09-11, 2004, USA
(13)
PLASMA: A Location-, Privacy- and Energy-aware Middleware Platform
P. Langendörfer
North Eastern University, Boston, August 12, 2004, USA
(14)
Are There Alternatives to Silicon Based Technology
W. Mehr
EMRS 2004 Spring Meeting Strasbourg, May 26, 2004, France
(15)
Mikroelektronik - der großen Schritt in kleinste Welten
W. Mehr
Tag der Wissenschaft an der Europa-Universität Frankfurt (Oder), November 10, 2004, Germany
(16)
Alternative SOI-Strukturen
H.-J. Müssig
Vortrag in der Siltronic AG Burghausen, March 25, 2004, Germany
(17)
Neue Materialien in der Mikroelektronik - Trends und Anforderungen
H.-J. Müssig
Seminarvortrag im Institut für Ionenstrahlphysik und Materialforschung Forschungszentrum Rossendorf, March 29, 2004, Germany
(18)
Welche Rolle spielen neue Materialien in der Mikroelektronik?
H.-J. Müssig
Vortrag zum Tag der offenen Tür im IHP, Frankfurt (Oder), September 04, 2004, Germany
(19)
Atomically Controlled Impurity Doping in Si-Based CVD
J. Murota, M. Sakuraba, B. Tillack
MRS Spring Meeting 2004, San Francisco, April 12-16, 2004, USA
(20)
IHP - Institut für Innovative Mikroelektronik
H. Richter
Hochschulinformationstag der TFH Wildau, May 07, 2004, Germany
(21)
Defect Engineering und Wafer Design in der Siliziumtechnologie
H. Richter
Freiburger Materialforschungszentrum, Freiburg, July 09, 2004, Germany
(22)
Si Crystal Growth and Defect Engineering
H. Richter
The 4th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, November 22-26, 2004, USA
(23)
SiGe HBT Design for High-Frequency Applications
H. Rücker, B. Heinemann, R. Barth, D. Knoll, P. Schley, R. Scholz, B. Tillack, W. Winkler
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(24)
Advances in SiGe HBT Technology in Europe
H. Rücker, W. Winkler
Compound Semiconductor IC Symposium, Monterey, October 23-28, 2004, USA
(25)
A Comparative SR-GIXRD, STM and LEED Study of the Structural Properties of Pr2O3 Epilayers on Si(001) and Si(111)
T. Schröder, H.-J. Müssig
Hahn Meitner Institute Berlin, April 2004, Germany
(26)
Modern Synchrotron Radiation Grazing Incidence Diffraction Studies: The Example of Epitaxial Pr2O3 Layers on Si(001) and Si(111)
T. Schröder, T.L. Lee, L. Libralesso, J. Zegenhagen, C. Wenger, P. Zaumseil, H.-J. Müssig
Ecole Centrale de Lyon, Laboratory of Electronical Engineering, Lyon, July 2004, France
(27)
Atomic Level Control of SiGe Epitaxy and Doping
B. Tillack
University of Hannover, Institute for Semiconductor Devices and Electronic Materials, July, 08, 2004, Germany
(28)
High-Performance, Low-Cost SiGe:C BiCMOS Technology
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler
Semicon Europe 2004 , Munich, April 20-22, 2004, Germany
(29)
High-Performance, Low-Cost SiGe:C BiCMOS Technology
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler
STS Session: SiGe/SOI/Strained Si: From Growth to Device Properties, International Congress Center Munich, April 21, 2004, Germany
(30)
Atomic Level Control of SiGe Epitaxy and Doping
B. Tillack, Y. Yamamoto, J.Murota
SiGe: Materials, Processing, and Devices : The 1st International Symposium, Honolulu, October 03-08, 2004, Hawaii, USA
(31)
Application of SiGe:C BiCMOS to Wireless and Radar
W. Winkler, B. Heinemann, D. Knoll
European Gallium Arsenide and other Compound Semiconductors Application Symposium 2004, Amsterdam, October 11-12, 2004, Netherlands
(32)
High Resolution X-Ray Characterization of SiGe:C Structures for High Frequency Microelectronics Applications
P. Zaumseil
HREDAMM, Zakopane, June 13-17, 2004, Poland
Presentations
(1)
Nitrogen in Thin Silicon Wafers Determined by Infrared Spectroscopy
V.D. Akhmetov, O. Lysytskiy, H. Richter
9th Augustusburg Conference of Advance Science, Das Silicium-Zeitalter: Silicium für Mikroelektronik, Photvolatik und Photonik, Augustusburg, September 23-25, 2004, Germany
(2)
Carbon and Boron in Heavily Doped SiGe:C/Si Epilayers Studied by FTIR
V.D. Akhmetov, O. Lysytskiy, Y. Yamamoto, H. Richter
SiGe: Materials, Processing, and Devices: The 1st International Symposium, Honolulu, October 03-08, 2004 Hawaii, USA
(3)
Silicon-based Light Emission after Ion Implantation
T. Arguirov, M. Kittler, W. Seifert, A. Fischer
9th Augustusburg Conference of Advance Science, Das Silicium-Zeitalter: Silicium für Mikroelektronik, Photvolatik und Photonik, Augustusburg, September 23-25, 2004, Germany
(4)
Bestimmung der optischen Eigenschaften des Fotoresists für die Fotolithographie-Wellenlängen durch Swingoptimierung
J. Bauer, U. Haak, G. Drescher
3rd Workshop Ellipsometrie, Stuttgart, February 23-25, 2004, Germany
(5)
Effects of Various Ci/Ti and Co/TiN Layer Stacks and the Silicide Rapid Thermal Process Conditions on Cobalt Silicide Formation
S. Buschbaum, O. Fursenko, D. Bolze, D. Wolansky, V. Melnik, J. Nieß, W. Lerch
MAM 2004 - Materials for Advanced Metallization, Brussels, March 2004, Belgium
(6)
Accurate Modeling of SiGe:C HBTs using Adaptive Neuro-Fuzzy Inference System
A. Chakravorty, R.F. Scholz, B. Senapati, D. Knoll, A. Fox, R. Garg, C.K. Maiti
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(7)
Electrical Deactivation and Diffusion of Boron in Preamorphized Ultrashallow Junctions: Interstitial Transport and F co-implant Control
B. Colombeau, A.J. Smith, N.E.B. Cowern, W. Lerch, S. Paul, B.J. Pawlak, F. Christiano, X. Hebras, D. Bolze, C. Ortiz, P. Pichler
IEDM 2004, San Francisco, December 13-15, 2004, USA
(8)
MEDman - Ubiquitous Medical Assistance
J. deMeer
EUREKA MEDEA+ Board Paris, June 03, 2004, France
(9)
Model-driven Design of the WIN Platform
J. deMeer
17èmes Journées Internationales "Génie Logiciel & Ingénierie de Systèmes et leurs Applications", Paris - November 30 - December 2, 2004, France
(10)
How to Achieve Security by Architecturing Middleware Supporting Mobile Applications
J. deMeer
IST 2004 Conference - Workshop on Emerging Security Technology, Den Haag, November 15-17, 2004, Netherlands
(11)
Deployment of Sensor Networks to medical and other Business Application Domains
J. deMeer
IST 2004 Conference - Workshop on Research Collaboration between Canada and Europe, Den Haag, November 15-17, 2004, Netherlands
(12)
High-Level Behavioral SDL Model for the IEEE 802.15.3. MAC Protocol
D. Dietterle, I. Babanskaja, K. Dombrowski, R. Kraemer
WWIC 2004, Frankfurt (Oder), February 05-07, 2004, Germany
(13)
Mapping of High-Level SDL Models to Efficient Implementations for TinyOS
D. Dietterle, J. Ryman, K. Dombrowski, R. Kraemer
EUROMICRO Symposium on Digital System Design, Rennes, August 31- September, 03, 2004, France
(14)
Integrated RF LDMOS
K.-E. Ehwald
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(15)
A Two Mask Complementary LDMOS Module Integrated in a 0.25 µm SiGe:C BiCMOS Platform
K.-E. Ehwald, A. Fischer, F. Fürnhammer, W. Winkler, B. Senapati, R. Barth, D. Bolze, B. Heinemann, D. Knoll, H. Rücker, D. Schmidt, I. Shevchenko, R. Sorge, H.-E Wulf
ESSDERC 2004, Leuven, September 21-23, 2004, Belgium
(16)
Bluetooth Indoor Localization System
G. Fischer, B. Dietrich, F. Winkler
1st Workshop on Positioning, Navigation and Communication 2004, Hannover, March 26, 2004, Germany
(17)
SiGe:C-BiCMOS-Technologie als Basis für UWB-Transceiver
G. Fischer, B. Heinemann, R. Kraemer
Öffentliche Diskussionssitzung des Fachausschusses 7.2 der ITG zu
Ultra Wide Band - Technologien und mögliche Anwendungen, Kamp-Lintfort, November 11, 2004, Germany
(18)
Application of Electron Holography in BiCMOS Technology
P. Formanek, B. Heinemann, M. Kittler, D. Krüger, R. Kurps, A. Orchowski, A. Ourmazd, W.-D. Rau, H. Rücker, P. Schwander, B. Tillack, P. Zaumseil
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(19)
Application of Electron Holography to Extended Defects: Schottky Barriers at NiSi2 Precipitates in Silicon
P. Formanek, M. Kittler
10th Internat. Conf. on Extended Defects in Semiconductors - EDS 2004, Moscow, September, 2004, Russia
(20)
Flash Integration
A. Fox
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(21)
Cost-effective Integration of an FN-programmed Embedded Flash Memory into a 0.25 µm RF-BiCMOS Technology
A. Fox, K.-E. Ehwald, P. Schley, R. Barth, S. Marschmeyer, V.E. Stikanov, A. Gromovyy, A Hudyryev
The ICM 2004 International Conference on Microelectronics, Tunis, December 6-8, 2004,Tunisia
(22)
Optimization of Anti-reflective Coating PECVD SiOxNy for Lithography Application
O. Fursenko, J. Bauer, B. Kuck, A. Penkov
3rd Workshop Ellipsometrie, Stuttgart, February 23-25, 2004, Germany
(23)
Spectroscopic Ellipsometry for In-Line Process Control of SiGe:C HBT Technology
O. Fursenko, J. Bauer, P. Zaumseil, D. Krüger, A. Goryachko, Y. Yamamoto, K. Köpke, B. Tillack
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(24)
A DC - 10 GHz Amplifier With Digital Offset Correction
H. Gustat
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(25)
A Fully-Integrated Low-Power Low-Jitter Clock Synthesizer with 1.2 GHz Tuning Range in SiGe:C BiCMOS
H. Gustat, F. Herzel, I. Shevchenko
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(26)
A Low-Parasitic Collector Construction for High-Speed SiGe:C HBTS
B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, T. Grabolla, U. Haak, W. Höppner, D. Knoll, B. Kuck, R. Kurps, K. Köpke, S. Marschmeyer, H.H. Richter, H. Rücker, P. Schley, D. Schmidt, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto
IEDM 2004, San Francisco, December 13-15, 2004, USA
(27)
High-performance HBT Modules in BiCMOS
B. Heinemann
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(28)
Jitter and Phase-Noise in Oscillators and Phase-locked Loops
F. Herzel, W. Winkler, J. Borngräber
2nd International Symposium on Fluctuations and Noise, Maspalomas, Gran Canaria, May 26-28, 2004, Spain
(29)
Standardization of Defect Characterization Technique in Annealed CZ Si
N. Inoue, K. Moriya, K. Kashima, R. Takeda, V.D. Akhmetov, O. Lysytshiy, K. Nakashima
4th International Symposium on Advanced Science and Technology of Silicon Materials, Kona, November 22-26, 2004, USA
(30)
Oxygen, Nitrogen, Intrinsic Point Defects and their Interaction in Defect Generation for Internal Gettering
G. Kissinger
Physikalisches Kolloquium der BTU Cottbus, November 11, 2004, Germany
(31)
Direct Evidence of Internal Schottky Barriers at NiSi2Precipitates in Si by Electron Holography
M. Kittler
Gordon Conference on Defects in Semiconductors New London, July 2004
(32)
Raumladung an NiSi2-Präzipitaten in n-Si
M. Kittler, P. Formanek
Arbeitstreffen ASIS-Verbundprojekt, Grosse Ledder, April 2004, Germany
(33)
Silicon-based Light Emission after Ion Implantation
M. Kittler, T. Arguirov, A. Fischer, W. Seifert
E-MRS Spring Meeting 2004, Strasbourg, May 24-28, 2004, France
(34)
Silicon-based Light Emission After Ion Implantation
M. Kittler, T. Arguirov, W. Seifert
Photonics West 2004 - Optoelectronic Integration on Silicon, San Jose, January 24-29, 2004, USA
(35)
Passivierbarkeit von Cu-kontaminierten Versetzungen in p-Si
M. Kittler, W. Seifert, O. Vyvenko
Arbeitstreffen ASIS-Verbundprojekt, Grosse Ledder, April 2004, Germany
(36)
Enhanced Relaxation of SiGe Layers by He Implantation Supported by In-Situ Ultrasonics Treatments
V.P. Kladko, V. Melnik, Ya. M. Olikh, V. Popov, B. Romanjuk, V.M. Yuchimchuk, D. Krüger
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(37)
5 GHz Transceiver in a SiGe:C BiCMOS Technology
J. Klatt, N. Fiebig
Workshop Analogschaltungen, Freiburg, March 11-12, 2004, Germany
(38)
Polycrystalline Si solar cells with DLC antireflection coatings
N. Klyui, V. Litovchenko, M. Kittler, W. Seifert
International Conference on Polycrystalline Semiconductors, POLYSE 2004, Potsdam, September 2004, Germany
(39)
A Modular, Low-Cost SiGe:C BiCMOS Process Featuring High-FT and High-BV CEO Transistors
D. Knoll, B. Heinemann, R. Barth, K. Blum, J. Borngräber, J. Drews, K.-E. Ehwald, G. Fischer, A. Fox, T. Grabolla, U. Haak, W. Höppner, F. Korndörfer, B. Kuck, S. Marschmeyer, H.H. Richter, H. Rücker, P. Schley, D. Schmidt, R.F. Scholz, B. Senapati, B. Tillack, W. Winkler, D. Wolansky, C. Wolf, H.-E. Wulf, Y. Yamamoto, P. Zaumseil
BCTM Montreal 2004, September 11-17, 2004, Canada
(40)
SGB25VD Low Cost BiCMOS Approach
D. Knoll
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(41)
Wireless Engine
R. Kraemer
Ringvorlesung Schwerpunkte der Informatik, Humboldt Universität Berlin, January 29, 2004, Germany
(42)
Chip-Entwicklung am IHP
R. Kraemer
Seminar Technischer Bereich, DESY Zeuthen, February 24, 2004, Germany
(43)
Der Bluetooth-Koffer: Intelligentes Gepäck für eine erhöhte Sicherheit
R. Kraemer
Ringvorlesung Das Internet und seine Anwendungen (III), BTU Cottbus, May 04, 2004, Germany
(44)
Integrierte drahtlose Systeme und integrierte Radarsysteme der Zukunft
R. Kraemer
Vortrag zum Tag der offenen Tür im IHP, Frankfurt (Oder), September 04, 2004, Germany
(45)
Remote Operations: A Middleware and Distributed Systems Architecture for Satellite On-Board Wireless Communication
R. Kraemer, K. Dombrowski, D. Dietterle, P. Langendörfer, M. Methfessel
DASIA 2004, Data Systems in Aerospace, Nice, June 28-July 01, 2004, France
(46)
GALS Baseband Processor for WLAN
M. Krstic, E. Grass
4th ACiD-WG Workshop, Turku, June 28-29, 2004, Finland
(47)
GALSification of IEEE 802.11a Baseband Processor
M. Krstic, E. Grass
14th International Conference on PATMOS 2004, Santorini, September 15-17, 2004, Greece
(48)
A Location Aware Revocation Approach
D. Kulikowski, P. Langendörfer, K. Piotrowski
Mobile Computing und Medien Kommunikation im Internet, University of Ulm, September 23, 2004, Germany
(49)
PLASMADS: Smart Mobiles Meet Intelligent Environments
P. Langendörfer, H. Maass, T. Falck
4th Workshop on Applications and Services in Wireless Networks, Boston, August 09-11, 2004, USA
(50)
A Combined Synchrotron X-Ray Diffraction and STM Study of the Structural Properties of Ultra-Thin Pr2O3 Layers on Si(111)
L. Libralesso, T. Schröder, T.L. Lee, I. Joumard, J. Zegenhagen, H.-J. Müssig
E-MRS Spring Meeting 2004, Strasbourg, May 24-28, 2004, France
(51)
Dependence of Structural and Electrical Properties of Pr and La Oxides on Growth, Annealing and Storage Conditions
G. Lippert, J. Dabrowski, P. Formanek, V. Melnik, R. Sorge, Ch. Wenger, P. Zaumseil, H.-J. Müssig
16th International Vacuum Congress, Venice, June 28 - July 02, 2004, Italy
(52)
Deposition Conditions and Post Treatment of High-k Praseodymium and Lanthanum Oxide Dielectrics
G. Lippert, J. Dabrowski, P. Formanek, V. Melnik, R. Sorge, Ch. Wenger, P. Zaumseil, H.-J. Müssig
206th Meeting of the Electrochemical Society, Honolulu, October 03-08, 2004, Hawaii, USA
(53)
Properties of Pr-silicate High-k Dielectrics Formed by Solid-State Reaction Between Pr and SiO2
G. Lupina
Deutscher MBE-Workshop, Braunschweig, October 12, 2004, Germany
(54)
Solid State Reaction between Pr and SiO2 Studied by Photoelectron Spectroscopy and ab initio Calculations
G. Lupina G, J. Dabrowski, P. Formanek, D. Schmeißer, R. Sorge, C. Wenger, P. Zaumseil, H.-J. Müssig
E-MRS Spring Meeting, Strasbourg, May 24-28, 2004, France
(55)
A CORDIC Like Processor for Computation of Arctangent and Absolute Magnitude of a Vector
K. Maharatna, A. Troya, M. Krstic, E. Grass, U. Jagdhold
Int. Symposium on Circuits and Systems, ISCAS 2004, Vancouver, May 23 - 26, 2004, Canada
(56)
Wann werden die Grenzen der Mikroelektronik erreicht? - Zukünftige Entwicklungstrends
W. Mehr
Vortrag zum Tag der offenen Tür im IHP, Frankfurt (Oder), September 04, 2004, Germany
(57)
TCP / IP Processor for Wireless
M. Methfessel
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(58)
Thin Dielectric Films Grown by Solid Phase Reaction of Pr with Thermal SiO2
H.-J. Müssig, J. Dabrowski, C. Wenger, G. Lupina, R. Sorge, P. Formanek, P. Zaumseil, D. Schmeißer
MRS Spring Meeting, San Francisco, April 12-16, 2004, USA
(59)
Moneta: An Anonymity Providing Lightweight Payment System for Mobile Devices
K. Piotrowski, P. Langendörfer, D. Kulikowski
2nd GI/IFIP Workshop on Virtual Goods, Ilmenau, May 27 - 29, 2004, Germany
(60)
Ensuring Anonymity in e-commerce Systems Using a Hidden Identity Approach: Discussion of Problems and Solutions
K. Piotrowksi, P. Langendörfer, O. Maye
7th International Conference on Electronic Commerce Research, Dallas, June 10-13, 2004, USA
(61)
Applying Position Prediction as a Means for Performance-tuning in Location-aware Platforms
A. Post, P. Langendörfer, R. Kraemer
1st Workshop on Positioning, Navigation and Communication 2004 (WPNC'04), Hannover, March 26, 2004, Germany
(62)
Mechanische Eigenschaften von ultradünnen Si-, GeSi- und GeSi:C-MBE Schichten auf (100) Siliziumsubstraten
R. Ries, A. Richter, B. Tillack
5. Workshop Rasterkraftmikroskopie in der Werkstoffwissenschaft, Dresden, February 26-27, 2004, Germany
(63)
Integration of High-Performance SiGe:C HBTs with Thin-Film SOI CMOS
H. Rücker, B. Heinemann, R. Barth, D. Bolze, J. Drews, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, S. Marschmeyer, N. Mohapatra, H.H. Richter, P. Schley, D. Schmidt, B. Tillack, G. Weidner, D. Wolansky, H.-E. Wulf, Y. Yamamoto
IEDM 2004, San Francisco, December 13-15, 2004, USA
(64)
The System Behavioral Model of IEEE 802.15.3 Mac Protocol - Design and Profiling
J. Ryman, D. Dietterle, K. Dombrowski, P. Bubacz
2nd International Workshop on Discrete-Event System Design, DESDes '04, Dychow, September 15-17, 2004, Poland
(65)
A 1GHz AGC Amplifier in BiCMOS With 3µm Settling-Time for 802.11a WLAN
K. Schmalz
IEEE Norchip 2004, Oslo, November 8-9, 2004, Norway
(66)
High Reactivity of Pr on Oxide Covered 4H-SiC
D. Schmeißer, G. Lupina, H.-J. Müssig
E-MRS Spring Meeting 2004, Strasbourg, May 24-28, 2004, France
(67)
Pr4f Occupancy and VB/CB Band Offsets of Pr2O3 at the Interface to Si (001) and SiC (0001) Surfaces
D. Schmeißer, H.-J. Müssig
E-MRS Spring Meeting 2004, Strasbourg, May 24-28, 2004, France
(68)
Design Kit and MPW Service
R.F. Scholz
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(69)
Advanced Technique for Broadband on-Wafer RF Device Characterization
R.F. Scholz, F. Korndörfer, B. Senapati, A. Rumiantsev
63rd ARFTG Conference , On Wafer Characterization, Ft. Worth, June 11, 2004, USA
(70)
The Heteroepitaxial Systems Pr2O3 /Si(001) and Pr2O3 /Si(111): Structure
and Strain in Rare Earth Oxide Epilayers on Si
T. Schröder, T.L. Lee, L. Libralesso, C. Wenger, P. Zaumseil, H.-J. Müssig
GDR Meeting, Grenoble, June 2004, France
(71)
Structure and Thickness-Dependent Lattice Parameters of Ultrathin Epitaxial Pr2O3 Films on Si(001) Studied by SR-GIXRD
T. Schröder, T.-L. Lee, J. Zegenhagen, C. Wenger, P. Zaumseil, H.-J. Müssig
Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Regensburg, March 08-12, 2004, Germany
(72)
A Grazing Incidence X-Ray Diffraction Study of Ultra-Thin Praseodymium Oxide Layers on Si (001): From Pseudomorphism to Bulk Behavior
T. Schröder, T.L. Lee, L. Libralesso, J. Zegenhagen, Ch. Wenger, P. Zaumseil, H.-J. Müssig
E-MRS Spring Meeting 2004, Strasbourg, May 24-28, 2004, France
(73)
Defekte und Rekombinationseigenschaften in n-leitendem HEM-Material
W. Seifert, M. Kittler, G. Jia
Arbeitstreffen ASIS-Verbundprojekt, Ochsenfurt, September 2004, Germany
(74)
Modelling and RF Characterisation
B. Senapati
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(75)
Macro Model of Power RF LDMOSFET
B. Senapati, K.-E. Ehwald, I. Shevchenko, R. Scholz, F. Fürnhammer
International Conference on Communications, Devices and Intelligent Systems, Kolkata, January 8-10, 2004, India
(76)
VBIC Model for SiGe:C Bipolar Technology
B. Senapati, R.F. Scholz, D. Knoll, B. Heinemann, A. Chakravorty
11th International MIXDES Conference, Szczecin, June 24-26, 2004, Poland
(77)
Self-Consistent Characterization of Gate Controlled Diodes for CMOS Technology Monitoring
R. Sorge, P. Schley, K.-E. Ehwald
ESSDERC 2004, Leuven, September 21-23, 2004, Belgium
(78)
Modular Processor: A Flexible Library of ASIC Modules
Z. Stamenkovic, G. Panic, U. Jagdhold, H. Frankenfeldt, K. Tittelbach-Helmrich, G. Schoof, R. Kraemer
IASTED International Conference on Applied Simulation and Modelling - ASM 2004, Rhodes, June 28-30, 2004, Greece
(79)
Atomic Layer Processing for Steep and Shallow Doping Profiles
B. Tillack, D. Bolze, R. Kurps, D. Wolansky, Y. Yamamoto, W. Mehr
Workshop RTP & Blitzlampen-Temperverfahren, Rossendorf, October 21, 2004, Germany
(80)
Advances in SiGe HBT Technology in Europe
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, P. Schley, W. Winkler, W. Mehr
Das Silicium-Zeitalter: Silicium für Mikroelektronik, Photvolatik und Photonik, Augustusburg, September 23-25, 2004, Germany
(81)
Recombination Activity and Electrical Levels of Clean and Copper Contaminated Dislocations in p-type Si
O.F. Vyvenko, M. Kittler, W. Seifert, M.V. Trushin
10th Internat. Conf. on Extended Defects in Semiconductors EDS 2004, Moscow, September 2004, Russia
(82)
First Investigations of MIM Capacitors Pr2O3 Dielectrics
C. Wenger
Frühjahrstagung der DPG, Regensburg, March 11, 2004, Germany
(83)
Electrical Properties of Praseodymium-Silicate Films for High-K Gate Applications
C. Wenger, J. Dabrowski, G. Lupina, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.-J. Müssig
Workshop of Dielectrics in Microelectronics 2004, Cork, June 28-30, 2004, Ireland
(84)
First Investigation of MIM Capacitors Using Pr2O3Dielectrics
C. Wenger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.-J. Müssig
E-MRS Spring Meeting, Strasbourg, May 24-28, 2004, France
(85)
High-Performance RF Circuits
W. Winkler
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(86)
DüseF: Bedeutung und Stand der Forschung im IHP
W. Winkler
Presentation for Project Preparation "Drahtlose Übertragung von Sensordaten im Fahrzeug (DueseF)" , Stuttgart Gerlingen, January 26, 2004, Germany
(87)
Millimeterwellen-Schaltungen: Bedeutung und Stand der Forschung im IHP
W. Winkler
Presentation at Workshop MMIC-Technologie in der KFZ-Radarsensorik , Wolfsburg, January 30, 2004, Germany
(88)
Frontend-Anforderungen für 77 GHz UMRR Sensor
W. Winkler
Presentation at Workshop MMIC-Technologie in der KFZ-Radarsensorik , Wolfsburg, February 20, 2004, Germany
(89)
Vorstellung der IHP Technologie und der IHP Schaltungstechnik
W. Winkler
Presentation at Meeting "Radarsysteme für die Automobilindustrie" , Ilmenau, April 4, 2004, Germany
(90)
Vorstellung des IHP und Grundschaltungen für 60 und 76 GHz Radarsysteme
W. Winkler
Presentation at Treffen zur Zusammenarbeit zwischen TU-Ilmenau (TUI), Daimler-Chrysler (DC), MEDAV und IHP, Ilmenau, April 30, 2004, Germany
(91)
Kostengünstige MMICs für 77 GHz mit der IHP SiGe:C Technologie
W. Winkler
Presentation at Workshop "MMIC-Technologie in der KFZ-Radarsensorik" , Wolfsburg, June 16, 2004, Germany
(92)
Cost-Effective MMICs for 77 GHz Automotive Radar with IHP SiGe:C Technology
W. Winkler
Presentation at Workshop "MMIC-Technologie in der KFZ-Radarsensorik" , Wolfsburg, September 28, 2004, Germany
(93)
LC-Oscillator for 94 GHz Automotive Radar System Fabricated in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber
European Gallium Arsenide and other Compound Semiconductors Application Symposium, Amsterdam, October 11-12, 2004, Netherlands
(94)
A 117 GHz LC-Oscillator in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, B. Heinemann
2nd ISTDM 2004, Frankfurt (Oder), May 16-19, 2004, Germany
(95)
LC-Oscillators Above 100 GHz in Silicon-Based Technology
W. Winkler, J. Borngräber, B. Heinemann
ESSCIRC 2004 - European Solid-State Circuits Conference, Leuven, September 20-23, 2004, Belgium
(96)
High-Frequency Low-Noise Amplifiers and Low-Jitter Oscillators in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, F. Herzel, B. Heinemann, R. Scholz
2nd International Symposium on Fluctuations and Noise, Maspalomas, Gran Canaria, May 26-28, 2004, Spain
(97)
60 GHz Transceiver Circuits in SiGe:C BiCMOS Technology
W. Winkler, J. Borngräber, F. Herzel, H. Gustat, B. Heinemann, F. Korndörfer
ESSCIRC 2004 - European Solid-State Circuits Conference, Leuven, September 20-23, 2004, Belgium
(98)
Reliability and Process Qualification
P. Zaumseil
Workshop High-Performance SiGe:C BiCMOS for Wireless and Broadband
Communication, Frankfurt (Oder), September 30, 2004, Germany
(99)
A Complex X-Ray Characterization of Epitaxially Grown High-K Gate Dielectrics
P. Zaumseil, T. Schröder
XTOP 2004, Prague, September 07-10, 2004, Czech Republic
Reports
(1)
SSMSC - Smart Secure Mass Storage Cards
E. Charbonnier, J. deMeer
Project Full Proposal to EU EUREKA/MEDEA+, 23.09.2004
(2)
Ab Initio Investigation of Pr-related High-K Dielectrics for CMOS Technology Development
J. Dabrowski
Project HFO06: Application for Computing Time on IBM Regatta and Cray , Progress Report 07.2003-04.2004
(3)
Verbundprojekt "Wireless Internet-Zellular"
Machbarkeitsstudie: Applikationen und Spezifikation ihrer zugehörigen Demonstratoren
C. Deist, O. Maye et al., 2004
(4)
On Designing Consistent Middleware Platforms, Version 0.2
J. deMeer
Contribution to Work Item AP2.1 (Architectural Principles) of the WINcell Project, 30.08.2004
(5)
Begriffsdefinitionen für AP2.1 "Tragfähige Architektur"
J. deMeer
Contribution to Work Item AP2.1 (Architectural Principles) of the WINcell Project, 06.08.2004
(6)
RESIDUAL - Reflective System Design for Human Life Assistancy
J. deMeer
EU STREP Proposal on FET open Call FP6-2002-IST-C, 17.12.2004
(7)
Zwischenbericht
K. Dombrowski
BASUMA Projekt, 2004
(8)
Zwischenbericht Gesamtprojekt
K. Dombrowski
BASUMA Projekt, 2004
(9)
Efficient Implementations of Cryptographic Routines - A Review and Performance Analysis of Various Approaches
Z. Dyka, F. Vater, O. Maye, P. Langendörfer, R. Kraemer
Technical Report 01/04, BTU Cottbus, 2004
(10)
4th Periodic Report and Final Report HERCULAS Project
P. Formanek, M. Kittler , 2004
(11)
Single-Chip Lösung für bandbreiteneffizientes drahtloses Kommunikationssystem
E. Grass, K. Tittelbach-Helmrich, H. Frankenfeldt, N. Fiebig
BMBF-Projekt 01 BU 054, Schlussbericht: On the Single-Chip Implementation of a Hiperlan/2 and IEEE 802.11a Capable Modem, 2004
(12)
Abschlussbericht
E. Grass, N. Fiebig, K. Tittelbach-Helmrich
IBMS2 (BMBF) Single-Chip Lösung für bandbreiteneffizientes drahtloses Kommunikationssystem, 2004
(13)
Zwischenbericht 1
E. Grass, F. Herzel, M. Piz, J.P. Ebert
WIGWAM (BMBF) Schichtenübergreifender Entwurf eines Höchstgeschwindigkeits-WLAN: Konzept, SoC-Implementierung und Demonstrator , im Rahmen der Leitinnovation "Mobile Internet", 16.02.2004
(14)
Zwischenbericht 2
E. Grass, F. Herzel, M. Piz, J.P. Ebert
WIGWAM (BMBF) Schichtenübergreifender Entwurf eines Höchstgeschwindigkeits-WLAN: Konzept, SoC-Implementierung und Demonstrator , im Rahmen der Leitinnovation "Mobile Internet", 12.08.2004
(15)
Final Report to Siltronic AG (contractual period March 15 - June 30, 2004)
G. Kissinger, 2004
(16)
Final Report to Siltronic AG (contractual period July 01 - December 31, 2004)
G. Kissinger, 2004
(17)
Raumladung an NiSi2-Präzipitaten in n-Si
M. Kittler, P. Formanek
Arbeitstreffen ASIS-Verbundprojekt, Grosse Ledder, April 2004
(18)
Passivierbarkeit von Cu-kontaminierten Versetzungen in p-Si
M. Kittler, W. Seifert, O. Vyvenko
Arbeitstreffen ASIS-Verbundprojekt, Grosse Ledder, April 2004
(19)
Ergebnisbericht Wireless Internet - zellular
B. Lehmann, P. Langendörfer et al., 2004
(20)
Design of PAL and Voice Optimisation for WLAN
A. Lunn, K. Tittelbach-Helmrich, F.M. Krause, T Becker, B. Cheetham, M. Kuhn, M. Methfessel, A. Ettafagh, M. Secall, M. Spegel
WinDECT Deliverable D3.2, 2004
(21)
Shallow-Trench RIE - Verfahrensentwicklung
H. H. Richter, S. Marschmeyer, S. Günther, H. Silz
Abschlussbericht zum Forschungs- und Entwicklungsvertrag vom 17.06.2004 zwischen ZMD Dresden GmbH & Co. KG und IHP Frankfurt (Oder) GmbH
(22)
Solid State Reaction Between Pr and SiO2 Studied by Photoelectron Spectroscopy
D. Schmeißer, G. Lupina, H.-J. Müssig
BESSY II - Status Report, 2004
(23)
Defekte und Rekombinationseigenschaften in n-leitendem HEM-Material
Zwischenbericht:
W. Seifert, M. Kittler, G. Jia
Arbeitstreffen ASIS-Verbundprojekt, Ochsenfurt, Sept. 2004
(24)
506746 - WINDECT STP D2.2 Technical Specification of 173 Demonstration System
M. Spegel, A. Lunn, F.-M. Krause, T. Wellhausen, K. Tittelbach-Helmrich, P. Reinhardt, B. Cheetham
WINDECT Wireless LAN with Integration of Professional-Quality DECT Telephony Report, 2004
Books
(1)
Materials Science in Semiconductor Processing , Vol. 7 (2004)
Papers presented at the E-MRS 2004 Spring Meeting Symposium C: New Materials in Future Silicon Technology
Eds. J. Dabrowski, H.-J. Müssig
Elsevier, 2004
(2)
Predictive Simulation of Semiconductor Processing - Status and Challenges
Eds. J. Dabrowski, E.R. Weber
Springer Series in Materials Science, Berlin, Springer Verlag 2004
(3)
Energy-Efficient Communication in Ad Hoc Wireless Local Area Networks
J.P. Ebert
Dissertation, TU Berlin, 2004
(4)
TEM-Holographie an Bauelementestrukturen der Mikroelektronik
P. Formanek
Dissertation, BTU Cottbus, 2004
(5)
SiGe: Materials, Processing, and Devices : Proceedings of the 1st International Symposium
Eds: D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack
Proceedings Electrochemical Society Vol. 2004-07 (2004)
(6)
Integration von Standard-AAA-Technologien in eine Plattform für ortssensitive Dienste unter besonderer Berücksichtigung mobiler Endgeräte
K. Jendrusch
Diplomarbeit, TFH Wildau, 2004
(7)
Das Silicium-Zeitalter: Silicium für Mikroelektronik, Photovoltaik und Photonik
Ed. M. Kittler
Abstracts, 9th Augustusburg Conference of Advanced Science, Augustusburg (Sachsen), 23.-25. Sept. 2004
(8)
Entwurf und Implementierung einer DSP-basierten IEEE 802.11a-Synchronisationseinheit
R. Kothe
Diplomarbeit BTU Cottbus, 2004
(9)
Providing Trust in E-commerce Systems (Especially in Wired/Wireless Networks)
D. Kulikowski
Diplomarbeit, University Zielona Gora, 2004
10)
Wired / Wireless Internet Communications
P. Langendörfer, M. Liu, I. Matta, V. Tsaoussidis (Eds.)
2ndInternational Conference WWIC 2004, Frankfurt (Oder), Germany, February 2004, Proceedings, Springer Verl., 2004 .- (LNCS ; 2957)
(11)
Towards Privacy Negotiation for Internet Services: Design and Prototyping of Basic Concepts
M. Maaser
Diplomarbeit, BTU Cottbus, 2004
(12)
Proceedings of the First International SiGe Technology and Devices Meeting (ISTDM 2003) : From Materials and Process Technology to Device and Circuit Technology Nagoya University Symposion, Nagoya, Japan Jan. 15-17, 2003
ed. by J. Murota, B. Tillack, M. Caymax, J. Sturm, Y. Yasuda, S. Zaima
Applied Surface Science 224 (1-4) (2004)
(13)
Design and Implementation of an Off-Line E-Cash Scheme
K. Piotrowski
Diplomarbeit, University of Zielona Góra, Faculty of Electrical Engineering, Computer Science and Telecommunications, 2004
(14)
Evaluation of Performance Impacts of Early Handoff Detection for PLASMA Event and Handoff Processing
A. Post
Bachelorarbeit, BTU Cottbus, 2004
(15)
Gettering and Defect Engineering in Semiconductor Technology - The 10th GADEST Conference
Eds. H. Richter, M. Kittler
Proc. GADEST 2003, in Solid State Phenomena, 95-96, 2004, 682 pages
(16)
Design and Profiling of the SystemC Behavioral Model of the MAC Protocol According to IEEE 802.15.3
J. Ryman
Diplomarbeit, University Zielona Gora, 2004
(17)
Design, Simulation und Evaluierung eines 5 GHz-Low-IF-Receivers
S. Seelig
Diplomarbeit, Universität der Bundeswehr, 2004
(18)
Synchronization and Channel Estimation in OFDM: Algorithms for Efficient Implementation of WLAN Systems
A. Troya
Dissertation, BTU Cottbus, 2004