IHP - Innovations for High Performance Microelectronics: Publications 2003

Publications 2003

Published Papers

81)

Oxygen Precipitates in Annealed Nitrogen Doped 300 mm Cz-Si

V.D. Akhmetov , H. Richter, O. Lysytskiy, T. Müller, R. Wahlich

Materials Science in Semiconductor Processing 5, 391 (2002)

The lateral distribution of oxide precipitates as well as the denuded zone were investigated in a set of 300 mm CZ silicon wafers containing different amounts of nitrogen. Two light scattering methods, infrared light scattering tomography (IR-LST) as well as scanning infrared microscopy (SIRM) were used to characterize the precipitation density and the spatial distribution. The obtained results show that under certain heat treatments a high density of oxide precipitates, more than 1 x 10⁹ cm^-3, can be achieved in the depth of 300 mm wafers. With increasing nitrogen content the radial distribution of precipitates becomes more uniform. A 10 - 60 m wide precipitation-free denuded zone was observed. A comparison between IR-LST and SIRM results was performed indicating the dominance of relatively small precipitates.

80)

Temperature Behaviour of Extended Defects in Solar Grade Silicon Investigated by Photoluminescence and EBIC

T. Arguirov , W. Seifert, M. Kittler, J. Reif

Materials Science and Engineering B102 (1-3), 251 (2003)

Spatially resolved photoluminescence and EBIC were used to characterise a sample of multicrystalline silicon in the temperature range 80-300 K. The dislocation related lines in the spectrum D1, D2, D3 and D4 correlate with the total recombination activity measured by EBIC. The temperature dependent EBIC behaviour was utilised to access the contamination level at the dislocations in low quality regions of the sample. The temperature dependence of D1 line shows a maximum at about 150 K. The decrement of D1 peak area upon temperature decreasing below 150 K could be related to the appearance of D3 and D4 lines in the photoluminescence spectra. The peak widths of D1 and D2 show opposite temperature dependence. D1 width decreases and D2 becomes broader upon decreasing temperature. Two additional lines with energies below the energy of band-to-band luminescence were observed together with the D bands at 80 K. They could be related to phonon replication of the band edge luminescence peak and can be seen on FZ-Si too.

79)

Raman-Spectroscopic Determination of in-homogeneous Stress in Submicron Silicon Devices

B. Dietrich, V. Bukalo, A. Fischer, K.F. Dombrowski, E. Bugiel, B. Kuck, H.H. Richter

Applied Physics Letters 82(8), 1176 (2003)

We present the deconvolution of measurements of inhomogeneous mechanical stress in silicon device structures obtained by UV micro-Raman spectroscopy. Due to the very small UV penetration depth of only 12 nm, averaging of stress over the depth is almost eliminated. Only the averaging of stress over the area of the laser spot remains. By deconvolution of the spectra and comparison with finite element simulations, it is now possible to extract information on mechanical stress from areas as small as 200 nm. Oppositely stressed regions in submicroscopic dimensions can be detected, which could not be detected in previous visible light measurements due to averaging.

78)

Integrated FSK Demodulator with Very High Sensitivity

H. Gustat, F. Herzel

IEEE Journal of Solid-State Circuits 38(2), 357 (2003)

This paper presents a fully integrated highly sensitive frequency-shift keying (fsk) demodulator functioning at a modulation factor of 0.5%-01.% and below. A dual-feedback phase-locked loop approach provides both very high sensitivity and sufficiently large tuning range. Experimental results in TSMC 0.25 µm CMOS technology demonstrate that Gaussian FSK signals of a modulation factor down to 0.06% can safely be demodulated.

77)

High-Frequency Noise in SiGe HBTs

F. Herzel

Materials Science in Semiconductor Processing 6, 119 (2003)

Starting from fundamental principles of stochastics, a set of equations is derived which attributes the noise parameters of bipolar and heterobipolar transistors to the small-signal parameters. The approach is verified by comparing directly measured minimum noise figures with those obtained from measured small-signal parameters in conjunction with the model equations. Using a standard device simulator, geometry and vertical profile of BJTs and HBTs can be optimized for low noise. As an example, the effect of the Ge content in the base of a SiGe HBT on the minimum noise figure is calculated.

76)

An Integrated CMOS RF Synthesizer for 802.11a Wireless LAN

F. Herzel, G. Fischer, H. Gustat

IEEE Journal of Solid State Circuits 38(10), 1767 (2003)

A frequency synthesizer combining a relatively large tuning range (4.12-4.72 GHz) with a low noise sensitivity is presented. A stable fine-tuning loop is combined with an unstable coarse-tuning loop in parallel. As a result, a stable phase-locked loop (PLL) with a relatively wide tuning range and a moderate level of reference spurs is obtained. By adding a resistorless coarse-tuning loop, the tuning range was increased by a factor of four with no penalty in terms of phase noise, reference spurs, and settling speed. Also, the additional chip area and power consumption are negligible. The CMOS PLL circuit fabricated in a 0.25 µm technology is aimed at multiband WLAN transceivers.

75)

Structural Properties of Thin ALD-Al₂O₃ Films

St. Jakschick, U. Schröder, T. Hecht, D. Krüger, G. Dollinger, C. Luhmann, J.W. Bartha

Applied Surface Science 211(1-4), 352 (2003)

Aluminum oxide was deposited using atomic layer deposition on either a silicon oxide or a silicon nitride interface. Water vapor or ozone were used as oxidation precursors. The structural properties of these films were investigated by time-of-flight secondary-ion-mass-spectroscopy (TOF-SIMS), X-ray photoelectron spectroscopy (XPS) and elastic recoil detection (ERD). Special attention was given to contamination issues of the film and the interface, bonding conditions and temperature influence on diffusion. The results suggest that the silicon most likely diffused along grain boundaries of polycrystalline Al₂O₃. Carbon and hydrogen were located at the interface and furthermore hydrogen diffused out of the film to some extent due to anneal. Carbon content in the layer was reduced when using O₃ as an oxidant. The formation of metallic aluminum clusters was not observed for any of the investigated process conditions.

74)

Influence of Contamination on the Electrical Activity of Crystal Defects in Silicon

M. Kittler, W. Seifert, K. Knobloch

Microelectronic Engineering 66(1-4), 281 (2003)

It is shown by EBIC that dislocation activity is controlled by the degree of metal contamination. The activity can be affected by external gettering and hydrogenation. DLTS investigations showed that the occurrence and features of the dislocation-related C1 line also depend on the amount of contamination. In small amounts, the impurities are believed to be tightly bonded to the dislocation core, resulting in a rather sharp energetic distribution of levels of the C1 line. At larger concentrations, the impurities are accommodated as a cloud in the dislocation strain field, giving rise to a broad energetic distribution of levels of C1. It is suggested that only impurity atoms in the cloud can be removed by external gettering and/or passivated by hydrogenation.

73)

Influence of Contamination on the Dislocation-related C1 Line Observed in DLTS Spectra of n-type Silicon: A Comparison with EBIC

K. Knobloch, M. Kittler, W. Seifert

Journal of Applied Physics 93(2), 1069 (2003)

In micro-Raman spectroscopy strong local heating by the tightly focused laser beam results in an unexpectedly small temperature shift of the Raman peak. The experimental results of shift, broadening, and asymmetry are discussed in view of restricted thermal expansion and a temperature dependent Raman cross section. The Raman signal originates mostly in the wings of the beam profile, where the temperature is substantially lower than at the center. Consequently, the Raman peak shift cannot be used to estimate the maximal surface temperature: despite local melting in the center of the probed spot, the maximal detected shift is only about 2 cm^-1, 10 times less than expected from the center temperature.

72)

Raman Measurement of Stress Distribution in Multicrystalline Silicon Samples

S. Kouteva-Arguirova, W. Seifert, M. Kittler, J. Reif

Materials Science and Engineering B 102(1-3), 37 (2003)

Micro-Raman spectroscopy was used to assess the spatial distribution of stress in multicrystalline silicon (mc-Si). Changes in the Raman peak position of about 0.1 wavenumbers on a length of several micrometers were detected between the grains and around the grain boundaries. These changes correspond to stress variations of about 50 MPa. Since the shifts caused by the stress are comparably small a careful analysis of the factors, influencing the measurement is necessary. Three major restrictions of the technique have to be considered: (i) the laser power should not cause significant local heating; (ii) the integration time should be large enough to resolve the signal with sufficient accuracy; (iii) the sample surface should be kept at the focus of the probe beam.

71)

Bluetooth Based Wireless Internet Applications for Indoor Hot Spots: Experience of a Successful Experiment During CeBIT 2001

R. Kraemer

Computer Networks 41, 303 (2003)

Wireless Internet access based on wireless LAN or Bluetooth networks will become popular within the next few years. New services will be offered using location and personal profiles to filter Internet access. Moreover,"push" services will allow unsolicited event-based information transfer depending on user configurations. We have introduced such a service, The Mobile Fairguide during CeBIT 2001 in a Bluetooth network that covered a full hall of 25,000 m² with 130 base stations. We were able to show that Bluetooth is a usable technology for such applications, especially with PDAs as terminal devices. Moreover, we tested our architecture in a live scenario with respect to scalability and mobility.

70)

Transient Processes and Structural Transformations in Si_xGe_1-x Layers During Oxygen Implantation and Sputtering

D. Krüger, A.A. Efremov, J. Murota, B. Tillack, R. Kurps, G. Ph. Romanova

Applied Surface Science 203-204, 285 (2003)

We analyze transient processes during oxygen bombardment and sputtering of epitaxial Si_xGe_1-x layers with different compositions (0 < x < 0.75). We show that a composition-dependent drop of the Ge⁺ secondary ion yield extends the transient period as a function of bombardment conditions. By means of computer modeling we describe secondary ion emission kinetics and simulate the dynamics of structural and compositional changes, including the Ge⁺ intensity drop. An interfacial transient period after crossing a Si/Si_xGe_1-x interface can be neglected, if the altered layer formation is completed within the Si cap layer. This allows reliable quantification of dopant spikes within a few nm to these interfaces.

69)

Ab-Initio Calculation of the Elastic Constants and Thermal Expansion Coefficients of Laves Phases

B. Mayer, H. Anton, E. Bott, M. Methfessel, J. Sticht, J. Harris, P.C. Schmidt

Intermetallics 11, 23 (2003)

To develop new intermetallic materials for high-temperature applications, systematic knowledge of the elastic properties of crystalline phases are useful. For the Laves phases, specifically, it is often difficult and time-consuming to measure the elastic constants and thermal expansion coefficients directly. Accurate density-functional calculations are a promising alternative to supply this information. We present calculations of the elastic constants of the C15 Laves phases MAl₂, where M = [Ca, Sc, Y, La] and MCr₂ where M = [Ti, Zr, Ta, Nb], using a recently developed variant (NFP) of the linear muffin-tin orbital (LMTO) method. The method includes the full crystal potential and allows the computation of forces and thus the relaxation of the atomic positions as the unit cell is deformed. From the elastic strain tensor we estimate the bulk moduli, Young's moduli, Poisson's ratios and sound velocities of polycrystalline samples. In addition, using the Debye-Gruneisen theory we obtain estimates for the Debye temperatures, specific heats and linear thermal expansion coefficients. Theoretical and experimental values are in reasonable agreement where experimental data are available. Overall, our results show that density-functional calculations can indeed substitute for explicit measurements for monocrystalline materials.

68)

Influence of N₂-H₂ Plasma Treatment on Chemical Vapor Deposited TiN Multilayer Structures for Advanced CMOS Technologies

V.P. Melnik , A. Goryachko, S. Chernjavski, D. Wolansky, E. Bugiel, D. Krüger

Materials Science and Engineering B102, 358 (2003)

Titanium nitride (TiN) multilayer (7.5-12 nm) structures with excellent conformity were produced by chemical vapor deposition from Ti[N(CH₃)₂]₄ (the so-called TDMAT) on a heated substrate with an additional N₂-H₂plasma treatment (PT) after deposition. They are well suited for deep submicron vias with aspect ratios of more than three. We apply time-of-flight secondary ion mass-spectroscopy, transmission electron microscopy, and Auger electron spectroscopy for a detailed characterization of morphology, structure and composition of the multilayers and analyze the barrier efficiency against Al diffusion. We demonstrate that low-energy primary beams and sample rotation applied during ion sputtering analysis significantly improves the depth resolution in elemental depth profiles and allows to characterize the effect of PTs more efficiently. The N₂-H₂ PT introduces a strongly anisotropic layer modification including etching, densification, crystallization and compositional changes. The plasma is effective in removing process induced contamination of the TiN layers (O, C) up to a depth of up to 5-8 nm, where the concentration is reduced by more than one order of magnitude. A minor influence is detected up to a depth of 10 nm, obviously mainly due to outdiffusion effects. The analysis of Al diffusion in TiN reveals a good diffusion resistance of the barrier up to 570 ^oC.

67)

Mechanical Properties of Nitrogen-Doped CZ Silicon Single Crystals

V. Orlov, H. Richter, A. Fischer, J. Reif, T. Müller, R. Wahlich

Materials Science in Semiconductor Processing 5, 403 (2003)

We investigated the effect of the nitrogen doping level on plastic properties of 300 mm silicon material in the temperature range between 650°C and 1000°C. Undoped, low N-doped, and high N-doped materials were examined. The dependence of the upper and lower yield point and the size dependence of indentation related dislocation rosettes on temperature were obtained. An increase in the nitrogen concentration leads to enhanced upper and lower yield points. Possible mechanisms of interaction of dislocations with impurities resulting in hardening of silicon single crystals are discussed. Finite element method (FEM) calculated data of bearing stress observed in 300 mm Si wafers annealed in a vertical furnace are compared with measured upper yield point values. At high nitrogen concentration the tolerable process temperatures, where plastic flow of Si wafers under load can be avoided, are significantly increased.

66)

Formation of Shallow Source/Drain Extensions for MOSFETs by Antimony Implantation

H. Rücker, B. Heinemann, R. Barth, D. Bolze, V. Melnik, D. Krüger, R. Kurps

Applied Physics Letters 82, 826 (2003)

Shallow Sb and As junctions have been investigated with regard to their applicability in complementary metal-oxide-semiconductor (CMOS) technologies. Replacing As source/drain extensions by Sb with the same implanted depth facilitates the formation of about 20 nm shallower junctions and even lower sheet resistance. This is due to the absence of transient enhanced diffusion effects and less dose loss for Sb. Sb source/drain extensions with a final junction depth of 40 nm and a sheet resistance of 320 Omega /sq have been integrated in a standard CMOS process with 130 nm gate length. The same low leakage current level is demonstrated for Sb and As extensions.

65)

Ge Instabilities Near Interfaces in Si/SiGe/Si Hetereostructures

D. Schmeißer, K. Pressel, Y. Yamamoto, B. Tillack, D. Krüger

Materials Science and Engineering B101(1-3), 208 (2003)

Compositional characterization of sharp buried interfaces in Si (cap)/Si_xGe_1-x/Si heterostructures is an important topic in SiGe based advanced microelectronics. Extremely high depth resolution is required to detect and optimize near-interface compositional gradients which are crucial for high circuit performance. Here we report on high-resolution, non-destructive interface characterization and near-interface depth profiling by conventional angle resolved photoelectron spectroscopy (ARXPS) and synchrotron radiation photoelectron spectroscopy (SRXPS). We investigated Si/Si_xGe_1-x/Si heterostructures prepared by reduced pressure CVD (RPCVD) characterizing the Ge content at the Si_xGe_1-x interface towards the native SiO₂ layer and the influence of additional (1 and 2 nm thick) Si capping layers. For the uncapped samples we found a strong mixing of Ge-oxides and SiO_x in the interface region This indicates a high instability of the Ge atoms at those interfaces. Silicon capped (1 and 2 nm) Si_xGe_1-x films are much more stable. They show no Ge-oxide formation at all even after a long-time room temperature storage. We were able to characterize sharp Ge concentration gradients in the vicinity of the Si/ Si_xGe_1-x interface with sub-nm resolution and to differentiate between samples containing Ge profile variations within 1 nm. This is important for Ge profile optimization in advanced Si (cap)/ Si_xGe_1-x/Si heterostructures.

64)

The Pr₂O₃/Si(001) Interface Studied by Synchrotron Radiation Photo-Electron Spectroscopy

D. Schmeißer, P. Hoffmann, H.-J. Müssig

Solid-State Electronics 47, 1607 (2003)

Pr₂O₃ is currently under consideration as a potential replacement for SiO₂ as the gate-dielectric material for sub-0.1 µm complementary metal-oxide-semiconductor (CMOS) technology. We studied the Pr₂O₃/Si(001) interface by a non-destructive depth profiling using synchrotron radiation photoelectron spectroscopy. Our data suggests that there is no silicide formation at the interface. Based on reported results, a chemical reactive interface exists, consisting of a mixed Si-Pr oxide such as (Pr₂O₃)_x(SiO₂)_1-x, i.e. as a silicate phase with variable silicon content. This pseudo-binary alloy at the interface offers large flexibility toward successful integration of Pr₂O₃ into future CMOS technologies.

63)

Application of Phase-Retrieval X-Ray Diffractometry to Carbon Doped SiGe(C)/Si(C) Superlattice Structures

K.-W. Siu, A.Y. Nikulin, P. Zaumseil, H. Yamazaki, T. Ishikawa,

Journal of Applied Physics 94(2), 1007 (2003)

An experimental-analytical technique for the model-independent nondestructive characterization of single crystal alloys is applied to SiGe(C)/Si(C) superlattice structures with different positions of substitutional carbon. The technique is based on the retrieval of the phase of the diffracted x-ray wave via a logarithmic dispersion relation, with subsequent determination of the complex crystal structure factor utilizing limited a priori knowledge of the superlattice structure. High-resolution, x-ray Bragg diffraction profiles were collected using a rotating anode source. The studies have allowed the reconstruction of the complex crystal structure factor as a function of crystal depth, permitting direct observation of strain relaxation in individual layers of the superlattice structure.

62)

Implant Dose Monitoring by MOS C-V Measurements

R. Sorge

Microelectronics Reliability 43, 167 (2003)

The most critical parameter for deep sub-micron MOS field effect transistors is the threshold voltage, which is highly dependent on processing, and specifically the ion implanted channel dose. Monitoring the channel doping on product wafers is highly desirable and is a major issue for process engineers. MOS C-V methods are widely used for process ramp up and monitoring and MOS C-V doping profiling is an introduced method for monitoring of low dose implants. However, the failure of the depletion approximation in the near surface region implies that conventional MOS C-V measurements yield erroneous doping profiles in that region. Integrating MOS C-V doping profiles yields only a partial implant dose, excluding the important near surface dose portion. Here, we report a new approach, which enables the determination of the entire implant dose, taking into account the crucial surface region. Moreover, the MOS threshold voltage can be obtained self-consistently. The method is also applicable to MOS structures with ultra thin gate oxides.

61)

Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System

V.D. Akhmetov, M. Kittler, W. Seifert, S. Marschmeyer, H.H. Richter, P. Formanek, J. Doerschel

Proc. GADEST 2003, in: Solid State Phenomena 95-96, 647 (2004)

60)

Luminescence of Silicon Implanted with Phosphorus

T. Arguirov, M. Kittler, W. Seifert, D. Bolze, K.-E. Ehwald, P. Formanek, J. Reif

Proc. GADEST 2003, in: Solid State Phenomena 95-96, 289 (2004)

59)

On the Deployment of Interactive Assistant Systems

J. de Meer, R. Kraemer, L. Thamm

Proc. of ICSSEA 2003 - 16^th International Conference on Software and System Engineering and their Applications, 3, 1/12 (2003)

58)

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen

A.A. Efremov, V.G. Litovchenko, A.V. Sarikov, H. Richter, V.D. Akhmetov

Proc. GADEST 2003, in: Solid State Phenomena 95-96, 405 (2004)

57)

Single-Chip Implementierung eines 5 GHz WLAN Modems

E. Grass

Proc. (Handouts)15. Workshop of the MPC-Group, 5 (2003)

56)

A Complementary BiCMOS Technology with High Speed npn and pnp SiGe:C HBTs

B. Heinemann, R. Barth, D. Bolze, J. Drews, P. Formanek, O. Fursenko, M. Glante, K. Glowatzki, A. Gregor, U. Haak, W. Höppner, D. Knoll, R. Kurps, S. Marschmeyer, S. Orlowski, H. Rücker, P. Schley, D. Schmidt, R.F. Scholz, W. Winkler, Y. Yamamoto

Proc. of the IEDM 2003, 117 (2003)

55)

An Integrated 10 GHz Quadrature LC-VCO in SiGe:C BiCMOS Technology for Low-Jitter Applications

F. Herzel, W. Winkler, J. Borngräber

Proc. CICC 2003, 293 (2003)

54)

Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations

M. Kittler, W. Seifert

Proc. GADEST 2003, in: Solid State Phenomena 95-96, 197 (2004)

53)

Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation of Different Temperatures, Studies by Means of Micro-Raman Spectroscopy

S. Kouteva-Arguirova, V. Orlov, W. Seifert, H. Richter, J. Reif

Proc. GADEST 2003, in: Solid tate Phenomena, 95-96, 513 (2004)

52)

Optimized Low-Power Synchronizer Design for the IEEE 802.11a

M. Krstic, A. Troya, K. Maharatna, E. Grass

Proc. ICASSP (Int. Conf. on Acoustics, Speech and Signal Processing), 2 of 6, II-333-6 (2003)

51)

Implementation of the IEEE 802.11a Compliant Low-Power Baseband Processor

M. Krstic, K. Maharatna, A. Troya, E. Grass, U. Jagdhold

Proc. of 6^th Int. Conf. on Telecommunications in Modern Satellite Cable and Broadcasting Services, TELSIKS 2003, 1, 97 (2003)

50)

Request-Driven GALS Technique for Datapath Architectures

M. Krstic, E. Grass

Proc. of the 3^rd ACiD-WG Workshop, Heraklion, Jan. 27-28, 2003, Greece, session 2 (2003)

49)

New GALS Technique for Datapath Architectures

M. Krstic, E. Grass

Proc. Int. Workshop on Power and Timing Modeling Optimization and Simulation - PATMOS 2003, Springer Verl. LNCS 2799, 161 (2003)

48)

Suppression of Enhanced Diffusion Effects in Sb Implantation Compared to As for Ultrashallow Junction Formation in Silicon

D. Krüger, H. Rücker, B. Heinemann, V. Melnik, R. Kurps, D. Bolze

Proc. of Ultra-Shallow Junctions 2003 (USJ'03), 419 (2003)

47)

Oxygen Ion Bombardement for Local Oxide Formation in Si

D. Krüger, R. Kurps, P. Formanek, G. Weidner

Proc. GADEST 2003, in: Solid State Phenomena 95-96, 77 (2004)

46)

Segregation and Diffusion of Sb Compared to As for Ultra-shallow Implantation into Silicon

D. Krüger, P. Zaumseil, V. Melnik, R. Kurps, P. Formanek, D. Bolze

CMOS Front-End Materials and Process Technology. Symposium ( Mater. Res. Soc. Symposium Proceedings Vol. 765), Eds.: King, T.-J.; Yu, B.; Lander, R.J.P.; Saito, S., Warrendale, PA, USA: Mater. Res. Soc, 765, 167 (2003)

45)

Towards Automatic Negotiation of Privacy Contracts for Internet Services

P. Langendörfer, M. Bennicke, R. Kraemer

Proc. ICON 2003: The 11th IEEE International Conference on Networks, Sydney, Sept. 28 - Oct. 03, 2003 , Australia, (2003)

44)

A Vertical Approach Towards Energy Efficient Application of Cipher Mechanisms in Hot Spots Running Location Aware Services

P. Langendörfer, Z. Dyka, F. Vater

Proc. Scientific VIP Forum of the International Conference on Internet, Processing, Systems, Interdisciplinaries, Tivat, Oct. 5-11, 2003, Montenegro (2003)

43)

A Novel 64-Point FFT/IFFT Processor for IEEE 802.11(a) Standard

K. Maharatna, E. Grass, U. Jagdhold

Proc. ICASSP (Int. Conf. on Acoustics, Speech and Signal Processing), 2 of 6, II-321-4 (2003)

42)

Plasma Etching and Analysis of Inorganic SiO₂-like Low Dielectric Constant Material

S. Marschmeyer, H.H. Richter, H. Silz, R. Barth, S. Günther, D. Krüger, D. Wolansky

Proc. of 16^th International Symposium on Plasma Chemistry, ed. by R. d'Agostino u.a., 342 (2003)

41)

Atomically Controlled Technology for Future Si-Based Devices

J. Murota, M. Sakuraba, B. Tillack

Proc. GADEST 2003, in: Solid State Phenomena

40)

Interface Characterization of the High-k Gate DielectricPr₂O₃

H.-J. Müssig, J. Dabrowski, D. Schmeißer

Proc. MRS Spring Meeting, San Francisco, April 21-25, 2003 , USA

39)

Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon

V.I. Orlov, Yu.L. Iunin, M.V. Badylevich, O. Lysytskiy, H. Richter

Proc. GADEST 2003, in: Solid State Phenomena 95-96, 465 (2004)

38)

Mechanical Properties of Nitrogen-Doped CZ Silicon Single Crystals

V. Orlov, H. Richter, A. Fischer, J. Reif, T. Müller, R. Wahlich

Proc. of the E-MRS IUMRS ICEM 2002 Meeting, Sub-Quarter-Micron Silicon Issues in the 200/300 mm Conversion Area, ed. by H. Fußstetter u.a. 183, 403 (2003)

37)

A System-on-Chip Implementation of the IEEE 802.11a MAC Layer

G. Panic, D. Dietterle, Z. Stamenkovic, K. Tittelbach-Helmrich

Proc. DSD' 2003 Euromicro Symposium on Digital System Design, Architectures, Methods and Tools, 319 (2003)

36)

The 10^th GADEST: Gettering and Defect Engineering an Old and New Story

H. Richter

Proc. of the Forum on the Science and Technology of Silicon and Technology of Silicon Materials 2003 / Eds.: H. Yamada-Kaneta, K. Sumino, publ.: Japan Technical Information Service, 72 (2003)

35)

SiGe:C BiCMOS Technology with 3.6 ps Gate Delay

H. Rücker, B. Heinemann, R. Barth, D. Bolze, J. Drews, U. Haak, W. Höppner, D. Knoll, K. Köpke, S. Marschmeyer, H.H. Richter, P. Schley, D. Schmidt, R. Scholz, B. Tillack, W. Winkler, H.-E. Wulf, Y. Yamamoto

Proc. of the IEDM 2003, 121 (2003)

34)

BiCMOS Integration of High-Speed SiGe:C HBTs

H. Rücker, B. Heinemann, R. Barth, D. Knoll, D. Schmidt, W. Winkler

Proc. of the Electrochemical Society Meeting 2003, 2003-06, 223 (2003)

33)

The Pr₂O₃/Si(001) Interface: a Mixed Si-Pr Oxide

D. Schmeißer, J. Dabrowski, H.-J. Müssig

Proc. of the MRS Spring Meeting 2003, April 21-25, 2003, San Francisco, USA (Symp. D), Materials Research Society Symposium Proceedings, 765, 121 (2003)

32)

Patterning of Anorganic SiO₂-like Low-k Material in Fluorocarbon

H. Silz, H.H. Richter, S. Marschmeyer, S. Günther, D. Krüger

11. Bundesdeutsche Fachtagung Plasmatechnologie Ilmenau, (2003)

31)

A Framework for Selection of Cache Configurations for Low Power

Z. Stamenkovic, F. Vater, Z. Dyka

Proc. of International Workshop on IP Based System-on-Chip Design, 137 (2003)

30)

High Performance SiGe:C HBTs Using Atomic Layer Base Doping

B. Tillack, Y. Yamamoto, D. Knoll, B. Heinemann, P. Schley, B. Senapati, D. Krüger

Proc. of ISTDM - 1^stInternational SiGe Technology and Device Meeting, 2003, Abstracts, 125 (2003)

29)

Simplified Residual Phase Correction Mechnanism for the IEEEE 802.11a Standard

A. Troya, M. Krstic, K. Maharatna

Proc. IEEE VTC-Fall 2003 Vehicular Technology Conference, Orlando, Oct.- 6-9, 2003, USA

28)

Two Low-Complexity Techniques to Improve Equalizer Performance in Wireless Burst Data Communications

G. Wang, K. Dombrowski

Proc. of IASTED International Conference on Communication Systems and Networks (CSN 2003), 244 (2003)

27)

Circuit Applications of High-Performance SiGe:C HBTs Integrated in BiCMOS Technology

W. Winkler, J. Borngräber, B. Heinemann, H. Rücker, R. Barth, J. Bauer, D. Bolze, E. Bugiel, J. Drews, K.-E. Ehwald, T. Grabolla, U. Haak, W. Höppner, D. Knoll, D. Krüger, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, P. Schley, D. Schmidt, R.F. Scholz, B. Tillack, D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. Zaumseil

Proc. of ISTDM 2003, Abstracts, 5 (2003)

26)

A 60 GHz VCO in 0.25 µm SiGe:C BiCMOS

W. Winkler, J. Borngräber, B. Heinemann, P. Weger,

Proc. of the ISSCC - International Solid State Circuits Conference 454 (2003)

25)

Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors

D. Wolansky, G.G. Fischer, D. Knoll, D. Bolze, P. Schley, B. Tillack, Y. Yamamoto

Proc. of GADEST 2003 in: Solid State Phenomena, 95-96, 249 (2004)

24)

Precise Measurement of Ge Depth Profiles in SiGe HBTs - a Comparison of Different Methods

P. Zaumseil, D. Krüger, R. Kurps, O. Fursenko, P. Formanek

Proc. of GADEST 2003 in: Solid State Phenomena95-96, 473, (2004)

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Accepted Papers

23)

Distribution and Properties of Oxide Precipitates in Annealed Nitrogen-doped 300 mm Si Wafers

V.D. Akhmetov, H. Richter, W. Seifert, O. Lysytskiy, R. Wahlich, T. Müller, M. Reiche

Proc. DRIPX - special Edition of European Physics Journal - Applied Physics

22)

Transistors and Atoms

J. Dabrowski, H.-J. Müssig, E.R. Weber, W. Schröter

Challenges in Process Simulation / ed. by J. Dabrowski, E.R. Weber, Berlin, Springer Verl. 2003

21)

Electron Holography on Silicon Microstructures: A Comparison with Scanning Probe Techniques

P. Formanek, M. Kittler

Journal of Physics: Condensed Matter

20)

Kristallines Si für Solarzellen: Status und Herausforderung

M. Kittler

Abhandlungen der Leibniz-Sozietät

19)

Silicon-based Light Emission after Ion Implantation

M. Kittler, T. Arguirov, W. Seifert

Proc. SPIE, Vol. 5357: 'Optoelectronic Integration on Silicon', Eds. D.J. Robbins, G.E. Jabbour

18)

Optimization of the Pre-Epitaxy Cleaning Regime for a One-Mask, SiGe:C BiCMOS HBT Module

D. Knoll, Y. Yamamoto, B. Heinemann, P. Formanek, K.-E. Ehwald, K. Blum, A. Fox, D. Schmidt, P. Schley, B. Tillack

Proc. ICSI3: 3^rdInternational Conference on SiGe(C) Epitaxy and Heterostructures , Santa Fe, March 09-12, 2003, New Mexico, USA

17)

Raman Investigation of Stress and Phase Transformation Induced in Silicon by Identation at High Temperature

S. Kouteva-Arguirova, V. Orlov, W. Seifert, J. Reif, H. Richter

Proc. DRIP X - special Edition of European Physics Journal - Applied Physics

16)

Oxide Formation During Ion Bombardement of Small Silicon Structures

D. Krüger, P. Formanek, E. Pippel, J. Woltersdorf, E. Bugiel, R. Kurps, G. Weidner

Journal of Vacuum Science and Technology

15)

A Middleware for Location-based Services: Design, Implementations and Lessons Learned

P. Langendörfer, O. Maye, Z. Dyka, R. Sorge, R. Winkler, R. Kraemer

Middleware for Communications

A book to be published by John Wiley & Sons in early 2004.

Edited by Qusay H. Mahmoud

14)

Some Open Issues on Internetworking for the Next Generation

P. Langendörfer, V. Tsaoussidis

Computer Communications

13)

A 64-Point Fourier Transform Chip for High Speed Wireless LAN Application Using OFDM

K. Maharatna, E. Grass, U. Jagdhold

IEEE Journal of Solid State Circuits

12)

High-k Dielectrics: The Example of Pr₂O₃

H.-J. Osten, J. Dabrowski, H.-J. Müssig, A. Fissel, V. Zavodinsky

Challanges in Process Simulation / ed. by J. Dabrowski, E.R. Weber, Berlin, Springer Verl. 2003

11)

Gettering and Defect Engineering in Semiconductor Technology - The 10^th GADEST Conference

H. Richter, H.G. Grimmeiss

MRS Bulletin

10)

Stability and Electronic Properties of Silicates in the System SiO₂-Pr₂O₃-Si(001)

D. Schmeißer, H.-J. Müssig

Proc. of the BIAMS 2003, 7^th Int. Workshop on Beam Injection Assessment of Microstructures in Semiconductors

The Pr₂O₃/Si(001) Interface Studied by Synchrotron Radiation Photo-Electron Spectroscopy

D. Schmeißer, H.-J. Müssig

Surface Science

Silicate Layer Formation at Pr₂O₃/ Si(001) Interfaces

D. Schmeißer, H.-J. Müssig, J. Dabrowski

Applied Physics Letters

Stability and Electronic Porperties of Silicates in the Systems SiO₂-Pr₂O₃ Si(001) Interfaces

D. Schmeißer, H.-J. Müssig

J. Phys. Condensed Matter

Discontinuities at the Pr₂O₃/ Si(001)

D. Schmeißer, H.-J. Müssig

Appl. Phys. Lett.

Pr₂O₃/ Si(001) Interface Reactions and Stability

D. Schmeißer, J. Dabrowski, H.-J. Müssig

Proc. E-MRS Spring Meeting, June 10-13, 2003, Strasbourg, France

in: Materials Science and Engineering

Surface X-Ray Diffraction Study of the Heteroepitaxial System Pr₂O₃/Si(001)

Th. Schröder, T.L. Lee, J. Zegenhagen, H.-J. Müssig, D. Schmeißer

Proc. of the INFOS 2003, Insulating Films on Semiconductors, 13^th Bi-annual Conference, Barcelona, June 18-20, 2003, Spain

Structure and Thickness-Dependant Lattice Parameters of Ultrathin Epitaxial Pr2O3 Films on Si (001) Studied by SR-GIXRD

T. Schröder, T.-L. Lee, J. Zengenhagen, C. Wenger, P. Zaumseil

Appl. Phys. Lett.

Manufacturability of SiGe:C Epitaxy for Heterojunction Bipolar Transistors integrated in a BiCMOS Technology

B. Tillack, D. Knoll, Y. Yamamoto, B. Heinemann, K.-E. Ehwald, W. Winkler, H. Rücker

Proc. RTP Symposium at the ECS Meeting Symposium Rapid Thermal and other Short-Time Processing Technologies III, Philadelphia, May 12-17, 2002, PA, USA

Progress in Silicon Materials: From Microelectronics to Photovoltaics and Optoelectronics

D. Yang , M. Kittler

Proc. Sino-German Symposium held in Hangzhou

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Invited Talks

14)

Nasschemie

K. Blum

Uni Hannover, IHW (Institute for Semiconductor Devices and Electronic Materials, University of Hannover), Hannover, Jan. 08, 2003, Germany

13)

Single-Chip Implementierung eines 5 GHz WLAN Modems

E. Grass

15. Workshop der MPC-Gruppe, Konstanz, July 11, 2003, Germany

12)

Kristallines Si für Solarzellen: Status und Herausforderung

M. Kittler

8^th Augustusburg Conference of Advanced Science, Solarzeitalter - Vision und Realität, Augustusburg, Sept. 11-13, 2003, Germany

11)

PLASMA: A Location-aware Platform and its Potential Applications

P. Langendörfer

Scientific VIP Forum of the International Conference on Internet, Processing, Systems, Interdisciplinaries, Tivat, Oct. 5-11, 2003, Montenegro

10)

Der Mikroelektronik-Standort Frankfurt (Oder)

W. Mehr

Modernisierung ländlicher Regionen, Hubertusstock, May 22, 2003, Germany

Innovationen für Unternehmen in Deutschland und in Berlin-Brandenburg

W. Mehr

12. Technologietag, Potsdam, Sept. 04, 2003, Germany

Atomically Controlled Technology for Future Si-Based Devices

J. Murota, M. Sakuraba, B. Tillack

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

The 10^thGADEST: Gettering and Defect Engineering an Old and New Story

H. Richter

The Forum on the Science and Technology of Silicon Materials 2003, Shonan Village Center, Kanagawa, Nov. 25-27, 2003, Japan

Wohin steuert die Mikroelektronik?

H. Richter

Neues Deutschland, Berlin, April 23, 2003, Germany

BiCMOS Integration of High-Speed SiGe:C HBTs

H. Rücker, B. Heinemann, R. Barth, D. Knoll, D. Schmidt, W. Winkler

Electrochemical Society Meeting 2003, Paris, April, 2003, France

High-Performance, Low-Cost SiGe:C BiCMOS Technology

B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Borngräber, J. Drews, G. Fischer, A. Fox, F. Fürnhammer, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, K. Köpke, D. Krüger, B. Kuck, R. Kurps, M. Marschmeyer, H.H. Richter, D. Schmidt, P. Schley, R.F. Scholz, W. Winkler, D. Wolansky, H.E. Wulf, Y. Yamamoto, P. Zaumseil

Meeting, KTH Kista, Dec. 15, 2003, Sweden

High Performance, Low-Cost SiGe:C BiCMOS Technology

B. Tillack, D. Knoll, B. Heinemannn, K.-E. Ehwlad, H. Rücker, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Borngräber, J. Drews, G. Fischer, A. Fox, F. Fürnhammer, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, K. Köpke, D. Krüger, B. Kuck, R. Kurps, M. Marschmeyer, H.H. Richter, D. Schmidt, P. Schley, R.F. Scholz, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. Zaumseil

2003 International Conference on Solid State Devices and Materials, Tokyo, Sept. 16-18, 2003, Japan

Future Trends of Atomically Controlled Processing for Nano Telecommunication Devices

B. Tillack, J. Murota

Int. Forum on Nano and Bio-Technology for Future Info-Communications, Osaka, March 20, 2003, Japan

Circuit Applications of High-Performance SiGe:C HBTs Integrated in BiCMOS Technology

W. Winkler, J. Borngräber, B. Heinemann, H. Rücker, R. Barth, J. Bauer, D. Bolze, J. Drews, K.-E. Ehwald, T. Grabolla, U. Haak, W. Höppner, D. Knoll, D. Kürger, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, P. Schley, D. Schmidt, R.F. Scholz, B. Tillack,, D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. Zaumseil

ISTDM 2003, 1st International SiGe Technology and Devices Meeting, 2003, Nagoya, Jan. 15-17, Japan

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Presentations

64)

Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System

V.D. Akhmetov, M. Kittler, W. Seifert, S. Marschmeyer, H.H. Richter, P. Formanek, J. Doerschel

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

63)

Diagnostics of Processed Si Wafers by FTIR

V.D. Akhmetov, O. Lysytskiy, M. Kittler, H. Richter

Freiberger Forschungsforum, Kolloquium 7 'Halbleitermaterialien', Freiberg, June 18-20, 2003,

Germany

62)

Distribution and Properties of Oxide Precipitates in Annealed Nitrogen-doped 300 mm Wafers

V.D. Akhmetov, H. Richter, W. Seifert, O. Lysytskiy, R. Wahlich, T. Müller, M. Reiche

DRIPX 10_th International Conference on Defetc Recognition, Imaging Physics in Semiconductors, Batz sur Mer, Sept.-29 - Oct. 02, 2003, France

61)

Luminescence of Silicon Implanted with Phosphorus

T. Arguirov, M. Kittler, W. Seifert, D. Bolze, K.-E. Ehwald, P. Formanek, J. Reif

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

60)

Photoluminescence Characterization of Defects Formed by Ion Implantation in Silicon

T. Arguirov, M. Kittler, W. Seifert, J. Reif

BIAMS 2003, 7^th Int. Workshop on Beam Induced Assessment of Microstructures in Semiconductors, Lille, May 25-29, 2003, France

59)

Aluminium Gettering in Multicrystalline Si

J. Chen, D. Yang, X. Wang, D. Que, M. Kittler

DRIP X, 10^th International Conference on Defect Recognition, Imaging and Physics in Semiconductors, Bats sur mer, September 29 - October 02, 2003, France

58)

On the Deployment of Interactive Assistant Systems

J. de Meer, R. Kraemer, L. Thamm

ICSSEA 2003 - 16th International Conference on Software and System Engineering and their Applications, Paris, Dec. 02-04, 2003, France

57)

ZigBEE, IEEE802.15.3 and Bluetooth: Standards for Emerging Ad-hoc Wireless Personal Area Networks

K.F. Dombrowski

Wireless Technologies, 5^th Congress, Sindelfingen, Oct. 15-16, 2003, Germany

56)

Assessing the Performance of Two-Dimensional Dopant Profiling Techniques

N. Duhayon, P. Eybena, M. Fouchiera, T. Claryssea, W. Vandervorsta, D. Alvarez, S. Schoemann, M. Ciappa, M. Stangoni, P. Formanek, V. Raineri, F. Giannazzo, D. Goghero, Y. Rosenwaks, R. Shikler, S. Saraf, S. Sadewasser, N. Barreau, T. Glatzel, M. Verheijen, S.A.M. Mentink, R. Wiesendanger, M. von Sprekselen, T. Maltezopoulos, L. Hellemans

Ultra Shallow Junctions 2003, Santa Cruz, April 27 - May 1, 2003, USA

55)

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen

A.A. Efremov, V.G. Litovchenko, A.V. Sarikov, H. Richter, V.D. Akhmetov

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

54)

Electron Holography on Silicon Microstructures: A Comparison with Scanning Probe Techniques

P. Formanek, M. Kittler

BIAMS 2003, 7^th Int. Workshop on Beam Induced Assessment of Microstructures in Semiconductors, Lille, May 25-29, 2003, France

53)

Application of Electron Holography on Semiconductor Devices

P. Formanek, M. Kittler

Meeting EU-Project 'HERCULAS', Stockholm, Oct. 2003, Sweden

52)

A Complementary BiCMOS Technology with High Speed npn and pnp SiGe:C HBTs

IEDM 2003, International Electron Device Meeting, Washington, Dec. 08-10, 2003, USA

51)

An Integrated 10 GHz Quadrature LC-VCO in SiGe:C BiCMOS Technology for Low-Jitter Applications

F. Herzel, W. Winkler, J. Borngräber

CICC 2003, San Jose, Sept. 21-24, USA

50)

Oxidation of SiGe CVD Layers : Stability and Ge Gradient Determined by Depth Profiling Using Synchrotron Radiation

P. Hoffmann, D. Schmeißer, D. Krüger

EUROMAT 2003, Symposium Materials for on-chip Interconnects and Interlayer Dielectrics Lausanne, Sept. 01-05, 2003, Switzerland

49)

The Lower-Limit of Recombination Activity of Dislocation in Crystalline Si

M. Kittler, W. Seifert

ACCGE-15, American Conference of Crystal Growth and Epitaxy, July 2003, Keystone, USA

48)

Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations

M. Kittler, W. Seifert

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

47)

Rekombinationsaktivität von Versetzungen in Si

M. Kittler, W. Seifert

Freiberger Forschungsforum, Kolloquium 7 'Halbleitermaterialien', Freiberg, June 18-20, 2003, Germany

46)

Abschätzung der bestmöglichen Diffusionslängen in mc-Si: Grenzen der Wirkung von Gettern und Passivieren auf Versetzungen

M. Kittler, W. Seifert

ASIS-Arbeitstreffen, Eisenach, February 24-26, 2003, Germany

45)

Improvement of Multi-Si Based Solar Cells Properties by Deposition of Antireflection and Passivating dlc Coatings

N.I. Klyui, V.G. Litovchenko, O.B. Korneta, V.P. Kostylyov, M. Kittler, W. Seifert

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

44)

Optimization of the Pre-Epitaxy Cleaning Regime for a One-Mask, SiGe:C BiCMOS HBT Module

D. Knoll, Y. Yamamoto, B. Heinemann, P. Formanek, K.-E. Ehwald, K. Blum, A. Fox, D. Schmidt, P. Schley, B. Tillack

ICSI3: 3^rd International Conference on SiGe(C) Epitaxy and Heterostructures , Santa Fe, March 09-12, 2003, USA

43)

Raman Investigation of Stress and Phase Transformation Induced in Silicon by Identation at High Temperature

S. Kouteva-Arguirova, V. Orlov, W. Seifert, J. Reif, H. Richter

DRIP X, 10^th International Conference on Defect Recognition, Imaging and Physics in Semiconductors, Bats sur mer, Sept. 29 - Oct. 02, 2003, France

42)

Residual Stress Distribution and Silicon Phase Transformation Induced by Rockwell Indentation of Different Temperatures, Studies by Means of Micro-Raman Spectroscopy

S. Kouteva-Arguirova, V. Orlov, W. Seifert, H. Richter, J. Reif

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

41)

Beacon-Networks: A Middleware Approach for Location Aware Internet Services

R. Kraemer

Initialer Workshop zum Aufbau einer Regionalen Middleware Infrastruktur in den Ländern Berlin und Brandenburg (Middleware-Forum), Berlin, April 25, 2003, Germany

40)

The Bluetooth Briefcase

R. Kraemer

Bluetooth World Congress 2003, Amsterdam, June 17-19, 2003, Netherlands

39)

The Bluetooth Briefcase: Intelligent Luggage for Increased Security

R. Kraemer

5. Wireless Technologies Kongress, Sindelfingen, Oct. 15-16, 2003, Germany

38)

Body Area Networks - Ein Weg zum innovativen Design von Kommunikationsgeräten

R. Kraemer, K. Dombrowski

Ringvorlesung - Das Internet und seine Anwendungen (II) BTU Cottbus, June 24, 2003, Germany

37)

Request-driven GALS Technique for Datapath Architectures

M. Krstic, E. Grass

3^rd ACiD-WG Workshop, Heraklion, Jan. 27-28, 2003, Greece

36)

New GALS Technique for Datapath Architectures

M. Krstic, E. Grass

Int. Workshop on Power and Timing Modeling Optimization and Simulation - PATMOS 2003, Turin, Sept. 10-12, 2003, Italy

35)

Suppression of Enhanced Diffusion Effects in Sb Implantation Compared to As for Ultrashallow Junction Formation in Silicon

D. Krüger, H. Rücker, B. Heinemann, V. Melnik, R. Kurps, D. Bolze

Ultra-Shallow Junctions 2003 (USJ'03), Santa Cruz, April 27-May 1, 2003, USA

34)

Sb Segregation and Enhanced Diffusion Analysis During Ultra-Shallow Junction Formation in Silicon

D. Krüger, V. Melnik, P. Zaumseil, P. Formanek, R. Kurps, D. Bolze

MRS Spring Meeting, San Francisco, April 21-25, 2003, USA

33)

Characterization of Ge Gradients in SiGe HBT Test Structures by AES Depth Profile Simulation

D. Krüger, A. Penkov, Y. Yamamoto, A. Goryachko, B. Tillack

ISTM 2003, 1^st International SiGe Technology and Devices Meeting, Nagoya, January 15-17, 2003, Japan

32)

Towards Automatic Negotiation of Privacy Contracts for Internet Services

P. Langendörfer, M. Bennicke

ICON 2003: The 11^th IEEE International Conference on Networks, Sydney, Sept. 28 - Oct. 03, 2003, Australia

31)

A Vertical Approach Towards Energy Efficient Application of Cipher Mechanisms in Hot Spots Running Location Aware Services

P. Langendörfer, Z. Dyka, F. Vater

Proc. Scientific VIP Forum of the International Conference on Internet, Processing, Systems, Interdisciplinaries, Tivat, Oct. 5-11, 2003, Montenegro (2003)

30)

PLASMA - A Location-aware Platform and its Potential Applications

P. Langendörfer, M. Maaser, R. Kraemer

Middleware-Forum für Selbständige, Kleine und Mittlere Unternehmen, Berlin, Sept. 19, 2003, Germany

29)

Wafercharakterisierung mittels IR-LST

O. Lysytskiy, V. Akhmetov, H. Richter

Freiberger Forschungsforum, Kolloquium 7: 'Halbleitermaterialien', Freiberg, June 18-20, 2003,

Germany

28)

Plasma Etching and Analysis of Inorganic SiO2-like Low Dielectric Constant Material

S. Marschmeyer, H.H. Richter, H. Silz, R. Barth, S. Günther, D. Krüger, D. Wolansky

16^th International Symposium on Plasma Chemistry, Taormina, June 22-27, 2003, Italy

27)

Very High Speed SiGe:C BiCMOS-Technology for Wireless and Broadband Communication up to 200 GHz

W. Mehr

Workshop - Semicon, March 03, 2003, Shanghai, China

26)

Interface Characterization of the High-k Gate Dielectric Pr2O3

H.-J. Müssig, J. Dabrowski, D. Schmeißer

MRS Spring Meeting, San Francisco, April 21-25, 2003 , USA

25)

Interface Characterization of the High-k Gate Dielectric Pr₂O₃

H.-J. Müssig, J. Dabrowski, D. Schmeißer

Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Dresden, March 24-28, 2003, Germany

24)

Pr₂O₃ / Si(001) Interface Reactions and Stability

H.-J. Müssig, J. Dabrowski, D. Schmeißer

E-MRS Spring Meeting, Strasbourg, June 10-13, 2003, France

23)

Phase Diagram and Thermodynamic Stability of the Pr-Si-O-System

H.-J. Müssig, J. Dabrowski, D. Schmeißer

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Sept. 21-26, 2003, Zeuthen, Germany

22)

Inluence of Nitrogen on Dislocation Mobility in Czochralski Silicon

V.I. Orlov, Yu.L. Iunin, M.V. Badylevich, O. Lysytskiy, H. Richter

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Sept. 21-26, 2003, Zeuthen, Germany

21)

A System-on-Chip Implementation of the IEEE 802.11a MAC Layer

G. Panic, D. Dietterle, Z. Stamenkovic, K. Tittelbach-Helmrich

DSD' 2003 Euromicro Symposium on Digital System Design, Architectures, Methods and Tools, Antalya, Sept. 3-5, 2003, Turkey

20)

SiGe:C BiCMOS Technology with 3.6 ps Gate Delay

IEDM 2003, International Electron Device Meeting, Washington, Dec. 08-10, 2003, USA

19)

Stability and Electronic Properties of Silicates in the System SiO₂-Pr₂O₃-Si(001)

D. Schmeißer, H.-J. Müssig

BIAMS 2003, 7^th Int. Workshop on Beam Injection Assessment of Microstructures in Semiconductors, Lille, May 25-29, 2003, France

18)

Structure and Electronic Properties of the Interface in the System SiO₂ - Pr₂O₃-Si(001)

D. Schmeißer, Th. Schröder, H.-J. Müssig

EUROMAT 2003, European Congress and Exhibition on Advanced Materials and Processes, Lausanne, Sept. 1-5, 2003, Switzerland

17)

Simple Emitter and Collector Scaling Approach with VBIC for Low-cost SiGe:C HBTs

R.F. Scholz, B. Senapati, A. Chakravorty, D. Knoll, C.K. Maiti

IC-CAP European User Meeting , Prague, Oct. 29-31, 2003, Czechia

16)

Surface X-Ray Diffraction Study of the Heteroepitaxial System Pr₂O₃/Si(001)

Th. Schröder, T.L. Lee, J. Zegenhagen, H.-J. Müssig, D. Schmeißer

Proc. of the INFOS 2003, Insulating Films on Semiconductors, 13^th Bi-annual Conference, Barcelona, June 18-20, 2003, Spain

15)

EBIC- und DLTS-Untersuchungen and n-leitendem EFG-Material

W. Seifert, M. Kittler

ASIS-Arbeitstreffen, Eisenach, February 24-26, 2003, Germany

14)

EBIC und DLTS an n-leitendem EFG

W. Seifert, Q. Wei, M. Kittler

ASIS-Arbeitstreffen, Eisenach, February 24-26, 2003, Germany

13)

Measurement and Modelling of On-Chip Spiral Inductors

B. Senapati, F. Herzel, R.F. Scholz, F. Fürnhammer, H.-E. Wulf

European IC-CAP User Meeting, Prague, Oct. 29-30, 2003, Czechia

12)

An Extended BSIM3v3 Model for RF MOSFETs

B. Senapati, K.-E. Ehwald, D. Knoll, F. Fürnhammer

12^th International Workshop on the Physics of Semiconductor Devices, Chennai , Dec. 16-20, 2003, India

11)

Patterning of Anorganic SiO₂-like Low-k Material in Fluorocarbon

H. Silz, H.H. Richter, S. Marschmeyer, S. Günther, D. Krüger

11. Bundesdeutsche Fachtagung Plasmatechnologie Ilmenau, March 09-12, 2003, Germany

10)

A Framework for Selection of Cache Configurations for Low Power

Z. Stamenkovic, F. Vater, Z. Dyka

International Workshop on IP Based System-on-Chip Design, Grenoble, Nov. 13-14, 2003, France

SiGeC auf Si-Herstellung und Eigenschaften eines neuen Halbleitermaterials

B. Tillack

Seminar im BBW Frankfurt (Oder), March 16, 2003, Germany

High Performance SiGe:C HBTs Using Atomic Layer Base Doping

B. Tillack, Y. Yamamoto, D. Knoll, B. Heinemann, P. Schley, B. Senapati, D. Krüger

ISTDM 2003, 1^st International SiGe Technology and Devices Meeting, Nagoya, January 15-17, 2003, Japan

Simplified Residual Phase Correction Mechanism for the IEEE 802.11a Standard

A. Troya, M. Krstic, K. Maharatna

IEEE VTC-Fall 2003 Vehicular Technology Conference, Orlando, Oct.- 6-9, 2003, USA

A New Cu-related Defect at Dislocations in p-Si

O.F. Vyvenko, M. Kittler, W. Seifert

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

Two Low-Complexity Techniques to Improve Equalizer Performance in Wireless Burst Data Communications

G. Wang, K. Dombrowski

IASTED International Conference on Communication Systems and Networks (CSN 2003), Benalmádena, Sept. 8-10, 2003, Spain

Hat die Struktur von Pr₂O₃ Einfluss auf die dielektrischen Eigenschaften?

C. Wenger

Deutscher MBE Workshop 2003, München, Oct. 16, 2003, Germany

A 60 GHz VCO in 0.25 µm SiGe:C BiCMOS

W. Winkler, J. Borngräber, B. Heinemann, P. Weger,

ISSCC, International Solid State Circuits Conference, San Francisco, Febr. 09-13, 2003, USA

Impact of Defects on the Leakage Current of SiGe/Si Heterobipolartransistors

D. Wolansky, G.G. Fischer, D. Knoll, D. Bolze, P. Schley, B. Tillack, Y. Yamamoto

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

Precise Measurement of Ge Depth Profiles in SiGe HBTs - a Comparison of Different Methods

P. Zaumseil, D. Krüger, R. Kurps, O. Fursenko, P. Formanek

GADEST 2003, the 10^th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, Zeuthen, Sept. 21-26, 2003, Germany

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Reports

Verbundprojekt "Wireless Internet-Zellular"

Machbarkeitsstudie: Applikationen und Spezifikation ihrer zugehörigen Demonstratoren

C. Deist et al.

Verbundprojekt "Wireless Internet-Zellular"

Tragfähige Architektur

C. Deist et al.

Verbundprojekt "Single-Chip Lösung für bandbreiteneffizientes drahtloses Kommunikationssystem"

E. Grass et al.

Zwischenbericht 2003

Arbeiten am IHP im Rahmen von ASIS zum Teilprojekt "Einfluss von Verunreinigungen auf die elektrische Wirkung von Kristalldefekten"

M. Kittler, W. Seifert

Zwischenbericht 2003

Verbundprojekt "Wireless Internet-Zellular"

Spezifikation der WIN Zell Plattform

P. Langendörfer

Solid State Reaction Between Pr and SiO₂ Studied by Photoelectron Spectroscopy

D. Schmeißer, G. Lupina, H.-J. Müssig

BESSY II - Status Report 2003

Verbundprojekt "Wireless Internet-Zellular"

Analyse der Anforderungen

P. Schwander et al.

Communication Protocol Implementation within the IBMS-2 Project

K. Tittelbach-Helmrich, J. Lehmann

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Books

Proceedings of the 3^rd International Workshop in Predictive Process Simulation (ChiPPS 2002)

J. Dabrowski, H.-J. Müssig (Eds.)

publ. in: Materials Science in Semiconductor Processing 2003

Proccedings of the 3^rd International Conference on Internet Computing, CSREA Press, 2003

P. Langendörfer, O. Droegehorn (Eds.)

Proceedings of the 2^rd Middleware Forum of GI/ACM Regional Group, Berlin, Sept. 19, 2003

J. de Meer (Ed.)

Oxidation of Si(113): Physics and Technological Perspective

H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert

Recent Developments in Vacuum Science and Technology, Transworld Research, Kerala, India, 2003

Gettering and Defect Engineering in Semiconductor Technology - The 10^th GADEST Conference

H. Richter, M. Kittler (Eds.)

Proc. GADEST 2003, Scientec Publ. Ltd. 2003 and Solid State Phenomena, 95-96, 2004, 682 pages

The 300 mm Silicon Era: Material, Equipment, Technology

H. Richter, M. Umeno, P. Wagner

Materials Science in Semiconductor Processing (Elsevier), Vol. 5, 2003

Proc. E-MRS Spring Meeting

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Patents

20)

Ultrawideband Kommunikationssystem für sehr hohe Datenraten

G. Fischer

IHP.245.03, DE-Anmeldung am 09.10.03, AZ: 103 47 395.5

19)

Halbleiterbauelement mit verspanntem aktiven Gebiet

A. Fischer, B. Dietrich, R. Barth, K. Blum, Th. Grabolla, U. Jagdhold, D. Knoll, B. Kuck, H.H. Richter, B. Tillack

IHP.250.03, DE-Anmeldung DE am 06.11.03, AZ: 103 52 730.3

18)

Herstellungsverfahren von Hochvolttransistoren mit CVD-Gate Isolator und Floating-Gate-Speicher

A. Fox, K.-E. Ehwald

IHP.247.03, DE-Anmeldung am 17.07.03, AZ: 103 33 512:9

17)

Prozessorbaustein

IHP.237.03, DE-Anmeldung am 31.10.03, AZ: 103 51 719.7

16)

Komplementäre Bipolar-Halbleitervorrichtung

B. Heinemann, J. Drews, S. Marschmeyer, H. Rücker

IHP.252.03, DE-Anmeldung DE am 05.12.03, AZ: 103 58 047.6

15)

Asynchrone Hüllschaltung für eine global asynchrone, lokal synchrone (GALS) Schaltung

M. Krstic, E. Grass

IHP.241.03, DE-Anmeldung am 24.01.03, AZ: 103 03 673.3-53

14)

Asynchrone Hüllschaltung für eine global asynchrone, lokal synchrone (GALS) Schaltung

M. Krstic, E. Grass

IHP.241.PCT, PCT-Anmeldung am 29.12.03, AZ: PCT/EP03/14959

13)

Bipolartransistor mit einkristalliner Basis

D. Krüger

IHP.240.03 , DE-Anmeldung am, AZ: 103 38 230.5

12)

Verfahren zum schrittweisen Austausch persönlicher Informationen in non-trusted Peer-To-Peer-Umgebungen

P. Langendörfer, H. Maass, T. Falck, K. Weidenhaupt

EP03103836.7, 2003

11)

Halbleiterkondensator mit Praseodymoxid als Dielektrikum

H.-J. Müssig

IHP.228.PCT, PCT-Anmeldung am 23.04.2003 AZ: PCT/EP 03/04215

10)

Halbleiterkondensator und damit aufgebauter MOSFET

H.-J. Müssig

IHP.230.PCT, PCT-Anmeldung am 04.07.03, AZ: PCT/EP 03/07179

Herstellungsverfahren für ein Halbleiterbauelement mit Praseodymoxid-Dielektrikum

H.-J. Müssig

IHP.249.03, DE-Anmeldung am 28.08.03, AZ: 103 40 202.0

Verfahren zur Herstellung von Si-Wafern mit einer Praseodymiumsilikat-Schicht

H.-J. Müssig, D. Schmeißer

IHP.238.02, DE-Anmeldung am 26.02.03, AZ: 103 09 728.7-33

Verfahren zur Herstellung von Si-Wafern mit einer Praseodymiumsilikat-Schicht

H.-J. Müssig, D. Schmeißer

IHP.238.PCT, PCT-Anmeldung am 29.12.03, AZ: PCT/EP03/14958

Halbleiterbauelement mit Praseodymoxid-Dielektrikum

H.-J. Müssig, D. Schmeißer

IHP.234.PCT, PCT-Anmeldung am 24.09.03, AZ: PCT/EP03/10625

Verfahren zur Herstellung eines elektronischen Bauelements mit einer Praseodymoxid-Schicht

H.-J. Müssig, U. Schwalke

IHP.235.PCT, PCT-Anmeldung am 18.09.03, AZ: PCT/EP03/10413

Bipolartransistor mit erhöhtem Basisanschlußgebiet und Verfahren zu seiner Herstellung

H. Rücker, B. Heinemann

IHP.253.03 Patentanmeldung DE am 05.12.03, AZ: 103 58 046.8

Verfahren und Vorrichtung zur Fehlerkorrektur von Multiplex-Signalen

A. Troya, K. Maharatna, M. Krstic

IHP.232.PCT, PCT-Anmeldung am 09.10.2003, AZ: PCT/EP03/11193

Synchronizer

A. Troya, K. Maharatna, M. Krstic, E. Grass

IHP.233.PCT, PCT-Anmeldung am 16.07.2003, AZ: PCT/EP03/07750

Halbleitervaraktor und damit aufgebauter Schwingkreis

W. Winkler

IHP.229.PCT, PCT-Anmeldung am 15.05.2003, AZ: PCT/EP 03/05132

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