Publications 2002

 

Published Papers | Additional Papers Accepted for Publications | Invited Presentations | Presentations | Reports | Books | Patents

 

Published Papers

 

67)

Temperature Behaviour of Photoluminescence and Electron-beam-induced Current Recombination Behaviour of Extended Defects in Solar Grade Silicon

T. Arguirov, W. Seifert, M. Kittler, J. Reif

Journal of Physics: Condensed Matter 14, 13169 (2002)

The temperature dependence of D-band and band-to-band (BB) luminescence was measured in EFG samples between 80 K and room temperature for defects/dislocations presenting different amounts of contamination. The contamination density was estimated from the temperature behaviour of the electron-beam-induced current contrast, ranging between about 10⁴ and 10⁶ impurities cm^-1 dislocation length. The D1 line became already visible at room temperature but its intensity was found to exhibit a maximum at about 150 K. D2, D3 and D4 start to show up at about 250, 190 and 170 K, respectively, and increase their intensities upon lowering temperature. At room temperature the width of the D1 line is broad and becomes narrower upon lowering the temperature. D2 shows the opposite behaviour. The intensities of D 1 and D2 were observed to show strong variations across the sample, whereas this was not observed for the pair D4/D3. In particular, the origin of the lines D 1 and D2 is still far from being understood. Two more lines at 1.040 and 0.987 eV were found in regions where the BB recombination is strong. They appear without any defect contribution and are explained as phonon replicas of the band edge luminescence.

 

66)

Mechanism of Dopant Segregation to SiO₂/Si(001) Interfaces

J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, M. Caldas

Physical Review B 65, 245305 (2002)

Dopant atoms can segregate to SiO₂/Si(001) interfaces and be deactivated there. Using phosphorus as a typical example of a donor and guided by results of ab initio calculations, we present a model of donor segregation. We find that P is trapped at the interface in the form of threefold-coordinated atoms. The atomic detailed configuration and the process of P incorporation depend on P concentration CP in the vicinity of the interface. At low CP, phosphorus atoms prefer to substitute Si atoms with dangling bonds. At high CP, phosphorus pairs are formed. At intermediate CP, (around 10¹⁷-10¹⁹ cm^-3) segregation occurs to sites associated with interface roughness and to interface Si-Si bridges, and is mediated by diffusion and annihilation of Si dangling bonds and by reoxidation during oxide annealing. Making diffusion of dangling bonds more difficult (for example, by nitridation) should, therefore, reduce the trapping efficiency of SiO₂/Si(001) in the technologically important regime of intermediate CP.

 

65)

Photoemission and ab Initio Theoretical Study of Interface and Film Formation During Epitaxial Growth and Annealing of Praseodymium Oxide on Si(001)

A. Fissel, J. Dabrowski, H.-J. Osten

Journal of Applied Physics 91(11), 8986 (2002)

X-ray photoelectron spectroscopy (XPS) was performed to study the formation process of Pr₂O₃/Si(001) interfaces and films during epitaxial growth and postgrowth annealing. A significant shift in the Pr and O core-level binding energy was found accompanied by an analogous shift in the Pr₂O₃ valence band maximum. This shift depends on the oxide layer thickness and interface structure, as indicated by ab initio pseudopotential calculations. It is caused by interface dipoles in the Si/Pr₂O₃ interface region due to the accumulation of oxygen. Besides providing an insight into the growth mechanism and interface properties of high-k dielectrics on Si, our results also demonstrate the usefulness of in vacuo XPS for investigating epitaxial growth processes.

 

64)

New Features of the Si(100)-c(4 x 4) Reconstruction Observed With STM: Suggestion of the Structure With Lowered Symmetry

A. Goryachko, P.V. Melnik, N.G. Nakhodkin, T.V. Afanasjeva, I.F. Koval

Surface Science 497(1-3), 47 (2002)

We report on the first scanning tunneling microscopy (STM) observations demonstrating that the Si(100)-c(4 x 4) surface structure may have a point group symmetry 1 m. Along with those, we were able to reproduce well known images of a point group symmetry 2 mm, which account for most of our STM experiments. We suggest, that the atoms belonging to the c(4 x 4) unit cell may occupy slightly non-equivalent positions - a difference which is not always detected, thus leading to the observation of a higher symmetry. A refined mixed ad-dimer model of the Si(100)-c(4 x 4) reconstruction is proposed and considered for explanation of obtained STM images. The corresponding atomic arrangement is found to be in the state of local energy minimum, not the global one, as confirmed by semi-empirical calculations. When compared with the 2 x 1 structure in the ad-layer of equal surface atomic density, the refined mixed ad-dimer model was found energetically grossly unfavorable. Thus, its validity can only be tested by more sophisticated ab initio calculations, possibly considering some impurity species. We also demonstrate that the Si(100)-c(4 x 4) surface has lower number of defects as the rate of cooling down after annealing at 650 ^OC decreases. Our data prompt us to think that the c(4 x 4) reconstruction is not a frozen metastable phase, but the basic factors which stabilize it in favor of a more familiar 2 x 1 reconstruction still remain unclear.

 

63)

Thermal Stability of Pr₂O₃ Films Grown on Si(100) Substrate

A. Goryachko, J.P. Liu, D. Krüger, H.-J. Osten, E. Bugiel, R. Kurps

Journal of Vacuum Science and Technology 20(6), 1860 (2002)

We have investigated the effect of thermal annealing on uncapped and Si-capped Pr₂O₃ films deposited on Si(100) substrate by Auger electron spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. A rapid diffusion of Si out of the substrate was found for     uncapped films at temperatures starting from 700 ^OC. The diffused Si is oxidized, forming a Pr₂O₃-Pr_x-O_y-Si_z mixture. The excess Si diffuses through the film, forming a SiO₂ rich layer on the surface. Annealing of uncapped films in vacuum has qualitatively similar effects as annealing in N₂, which is not the case for Si-capped films. The latter were transformed into a Pr₂O₃-Pr_x-O_y-Si_z mixture when annealed in N₂ starting from 900 ^OC and into PrSi_x when annealed in vacuum starting from 700 ^OC. Two distinct PrSi_x phases were found, with Si-richer phases corresponding to higher annealing temperature.

 

62)

Diffusion and Electrical Activity of Copper in Si_1-x-yGe_xC_y Alloys

A. Hattab, M.O. Aboelfotoh, G. Tremblay , F. Meyer, J. Kolodzey, H.-J. Osten, C. Dubois

Microelectronic Engineering 60(1-2), 283 (2002)

We investigate copper diffusion in Si-rich Si_1-x-yGe_xC_y (x<20%) and Ge-rich (x=93%) Si_1-xGe_x layers. The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations of Schottky diodes. The structures were prepared by copper deposition on SiGeC alloys at room temperature. The increase of the Ge-content from 0% to 93% results in a decrease of the Cu diffusion depth determined by SIMS. C-incorporation also leads to a reduction of Cu-diffusion. The effect of boron seems to be more important, and Cu-diffusion is well retarded in p-type samples. The electrical activity of Cu in IV-IV alloys depends on the Ge-content. For Si-rich p-type SiGe alloy, we observed a passivation of the boron acceptors attributed to the formation of Cu-B pairs, which also explains the reduction of Cu diffusion. For p-type Ge-rich samples, the acceptor concentration can reach very high values (larger than the boron concentration), and becomes temperature dependent. These results show that boron passivation is no longer the most important effect of Cu diffusion. We suggest that the presence of Cu in Ge-rich alloys produces an acceptor-like trap.

 

61)

Schottky Barrier Inhomogeneities at Contacts to Carbon-containing Silicon/Germanium Alloys

A. Hattab, J.L. Perrossier, F. Meyer, M. Barthula, H.-J. Osten, J. Griesche

Materials Science and Engineering B89(1-3), 284 (2002)

In this work the Schottky barrier height (SBH) of W on n-type and p-type Si_1-x-y Ge_xC_y pseudomorphic alloys is investigated as a function of the alloy composition. The epilayers were grown either by RTCVD or MBE. Electrical characterizations of contacts were achieved through current-voltage measurements in the temperature range 150 - 300 K. As soon as the amount of C exceeds 1.1%, the ideality factor n increases up to high values, such as 1.7 for y = 1.8%. In addition, the SBHs (Phi b) decrease with lowering temperature, while the ideality factors (n) become larger. A linear dependence Phi b (n) is observed for all the samples. Similar trends have already been reported for contacts on other semiconductors and have been explained by assuming lateral inhomogeneities at the interface. The SBHs of laterally homogeneous contacts can be obtained by extrapolation of experimental Phi b (n) plots to n = 1. The results show homogeneous interfaces for the Si_1-x Ge_x binary alloys and inhomogeneous interfaces for the carbon-containing alloys. The inhomogeneities of the interface are discussed in terms of local strain or (and) defects due to the C-incorporation.

 

60)

An Integrated CMOS PLL for Low-Jitter Applications

F. Herzel, G. Fischer, H. Gustat, P. Weger

IEEE Transactions on Circuits and Systems II, 49, 427 (2002)

This brief presents a fully integrated integer-N frequency synthesizer with a frequency-tuning range from 2.4 to 2.9 GHz and root-mean-square (rms) jitter below 2.5 ps over 350 MHz. The employed architecture using an inductance-capacitance (L-C) oscillator with two control inputs combines a wide tuning range with a low noise sensitivity. Potential applications include clock generation in microprocessors and clock recovery in fiberoptic receivers.

 

59)

Crystalline Silicon for Solar Cells

M. Kittler, W. Koch

Proc. GADEST 2001, in: Solid State Phenomena 82-84, 695 (2002)

The production volume of solar cells made from crystalline Si shows a strong growth rate and there is a high probability for continuation of this trend during the next decades. Multicrystalline Si is mainly used for reasons of cost reduction. This material shows a high density of crystal defects. Results about the origin of the electrical activity of dislocations and grain boundaries are presented here. Information about the reduction of the disturbing defect activity by gettering and hydrogen passivation and about the application of dislocations as collecting channels is given. Furthermore, application of advanced diagnostics is demonstrated.

 

58)

Room Temperature Luminescence and EBIC Recombination Behaviour of Crystal Defects in Multicrystalline Si

M. Kittler, W. Seifert, T. Arguirov, I. Tarasov, S. Ostapenko

Solar Energy Materials and Solar Cells, 72(1-4), 465 (2002)

Crystal defects such as dislocations and grain boundaries may show a detrimental influence on solar cell performance due to their recombination activity. The contamination of the defects by impurities strongly affects their recombination strength. Recently, it was shown that the temperature behaviour of the recombination activity of defects measured with EBIC, c(T), gives a quantitative access to the amount of contamination at dislocations. We have compared the mapping of the hand-to-hand and the defect (D1) photoluminescence (PL), measured at room temperature in multicrystalline Si, with the electron-beam-induced current temperature behaviour. Intensive D1 luminescence band and a remarkable reduction of the band-to-band PL intensity are observed at the defect sites. We have found that wafer regions with pronounced D1 band corresponds to dislocations with a weak contamination level down to a few tens of impurity atoms per µm of the dislocation length.

 

57)

Silicon Sola Cells with Antireflection Diamond-like Carbon and Silicon Carbide Films

N. Klyui N, V.G. Litovchenko, A.G. Roshin, V.N. Dikusha, M. Kittler, W. Seifert

Solar Energy Materials and Solar Cells 72(1-4), 597 (2002)

Optical properties of diamond-like carbon and silicon carbide (SiC) films in dependence on deposition conditions were investigated. It was established that the films having refractive index from 1.6 to 2.3 may be obtained. The film optical bandgap and hardness may be changed from 1.5 to 4 eV and from  1 to  20 GPa, correspondingly. The films were deposited onto the front side of silicon solar cells (SCs). It has been shown that deposition of single- or two-layer diamond-like carbon antireflection (AR) coatings enables the SCs efficiency to be improved 1.35-1.5 times. The improvement is connected with decreasing of reflection losses and passivation of recombination active centers. SiC AR coatings improve the solar cell efficiency up to 1.3 times.

 

56)

Oxygen Beam SIMS Depth Profiling of Si_1-xGe_x Layers: Transient Processes

D. Krüger, A.A. Efremov, J. Murota, B. Tillack, R. Kurps, G. Ph. Romanova

Surface and Interface Analysis, 33(8), 663 (2002)

Characterization of shallow dopant profiles near surfaces and interfaces in Si_1-xGe_x layers by secondary ion mass spectroscopy (SIMS) is a challenge in advanced Si-based technologies. In standard SIMS, quantification with confidence is possible only in the dynamic steady state of the measurement after completing a transient period. Therefore, we analyse the transient processes during oxygen bombardment and sputtering of epitaxial Si_1-xGe_x layers, which were grown by low-pressure chemical vapour deposition (LPCVD) with different compositions (0 < x < 0.75). We show that a drop of the Ge+ secondary ion yield near the end of the transient period in epitaxial Si_1-xGe_x layers extends this period in comparison with pure Si. We demonstrate that the drop is a function of layer composition and bombardment parameters, such as primary ion beam energy and erosion rate. We show that an interfacial transient period after crossing a Si/Si_1-xGe_x interface can be neglected if the formation of the oxygen-beam-induced altered layer is completed within the Si cap layer before reaching the interface between the cap and the Si_1-xGe_x layer. This allows reliable quantification of dopant spikes within a few nanometers near to interfaces. By means of computer modelling we describe secondary ion emission kinetics and simulate the dynamics of structural and compositional changes in the subsurface region of Si_1-xGe_x alloys caused by interaction with oxygen beams. Experimental and theoretical time dependencies for secondary ion yields are in good accordance; the dependence of the Ge+ intensity drop on the Ge concentration is simulated and experimentally proved.

 

55)

Influence of In-Situ Ultrasound Treatment During Ion Implantation on Amorphization and Junction Formation in Silicon

D. Krüger, R. Kurps, B. Romanyuk, V. Melnik, Ya. Olikh

Journal of Vacuum Science and Technology, B 20(4), 1448 (2002)

We report the first study of the effect of in situ Ultrasound treatment during ion Implantation on amorphization and transient enhanced diffusion (TED) in silicon. Rutherford backscattering spectroscopy, ion channeling, and Raman spectroscopy measurements show that amorphization of Si during Ar ion implantation is increased by ultrasound treatment, especially at ultrasound frequencies around 2 MHz. By secondary ion mass spectroscopy we investigate the influence of ultrasound treatment on TED of B atoms. Our data show that TED is reduced due to the influence of ultrasound treatment. The results are discussed in terms of the interaction of ultrasound waves with point defects and the ultrasound stimulated enhanced diffusion of interstitials.

 

54)

Shielding TCP from Wireless Link Errors: Retransmission Effort and Fragmentation

P. Langendörfer, M. Methfessel, H. Frankenfeldt, I. Babanskaja, I. Matthaei, R. Kraemer

Journal of Supercomputing, 23(3), 245 (2002)

A known problem for TCP connections over wireless links is that errors in the wireless channel interfere with the TCP protocol even for minor packet loss. In the first part of this paper we evaluate how the data rate reduction depends an the channel delay. For comparatively short delays in the order of 100 ms, the decrease of the throughput is noticeable but not dramatic. This indicates that the problem is not severe if the communication partners are located in the same WLAN or interact over a fast Internet connection. A significant throughput reduction arises in the case of a large network delay. Simulation results for the uplink transmission are presented as part of an overall strategy in which all improvements are made by optimizing the mobile end device only, an approach which allows performance improvements without any protocol modifications.

 

53)

Vertical Optimization of Data Transmission for Mobile Wireless Terminals

M. Methfessel, K. Dombrowski, P. Langendörfer, H. Frankenfeldt, I. Babanskaja, I. Matthaei, R. Kraemer

IEEE Wireless Communications 9(6), 36 (2002)

A major problem for TCP connections over wireless links is that errors introduced by the wireless channel interfere with the TCP protocol, leading to reduced data rates and power wastage.  Based on accurate simulations for the TCP and the IEEE 802.11 MAC protocols, we discuss recipes to optimize the transmission. It is argued that the best approach is to restrict modifications to the mobile device. While this requires separate solutions for the uplink and downlink, the results of the optimization are then available when roaming into any WLAN obeying the relevant MAC protocol. Simulation results show that the combination of specific strategies with a vertical interaction between the protocol layers can lead to the required improvements, giving a promising approach to enhance the performance of wireless mobile terminals.

 

52)

Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)

H.-J. Müssig, J. Dabrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.-J. Osten

Proc. GADEST 2001, in: Solid State Phenomena 82-84, 783 (2002)

Pr₂O₃ may be an alternative high-k gate dielectric material for silicon integrated circuits. Using STM and XPS, we could show that the initial stages of heteroepitaxial Pr₂O₃ grown on Si(001) consist of a mixed PrO₂/Pr₂O₃ phase. First ab initio calculations result also the formation of an ultra-thin Si-O interlayer between Si substrate and Pr₂O_3. In the monolayer range of deposited Pr₂O₃, AES measurements demonstrate that the oxide is completely decomposed above 780 ^OC.

 

51)

Initial Stages of Praseodymium Oxide Film Formation on Si(001)

H.-J. Müssig, J. Dabrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.-J. Osten    

Surface Science 504C, 159 (2002)

Pr₂O₃ may be an alternative high-K gate dielectric material for silicon integrated circuits, i.e., it has a dielectric constant K>or=25 and is currently under consideration as potential replacement for SiO₂ as the gate dielectric material for sub-0.1 µm complementary metal-oxide-semiconductor technology. Using scanning tunneling microscopy and X-ray photoelectron spectroscopy, we show that the initial stages of heteroepitaxial Pr₂O₃ grown on Si(001) consist of a mixed PrO₂/ Pr₂O₃ phase. First ab initio calculation results also indicate the formation of an ultra-thin Si-O interlayer between the Si substrate and Pr₂O₃. In the monolayer range of deposited Pr₂O₃, Auger electron spectroscopy measurements show that the oxide is completely decomposed above 780 ^OC.

 

50)

Local Electrostatic Potential and Process-Induced Boron Redistribution in Patterned Si/SiGe/Si Heterostructures

A. Orchowski, W.-D. Rau, H. Rücker, B. Heinemann, P. Schwander, B. Tillack,  A. Ourmazd

Applied Physics Letters 80(14), 2556 (2002)

We present microscopic maps of the electrostatic potential in Si/SiGe/Si patterned structures of the type used in heterostructure bipolar transistors. By obtaining such maps before and after anneals typically used in device processing, we directly reveal the "vertical" and "lateral" redistribution of boron during device fabrication. Such data can be compared with the results of process simulation to extract the fundamental parameters for dopant diffusion in complex device structures.

 

49)

Growth of Crystalline Praseodymium Oxide on Silicon

H.-J. Osten, J.P. Liu, E. Bugiel, H.-J. Müssig, P. Zaumseil

Journal of Crystal Growth 235(1-4), 229 (2002)

We present the results for crystalline growth of praseodymium oxide on Si as a potential high-k dielectric with promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial stages of growth were studied by scanning tunneling microscopy. On Si(001) surfaces, crystalline Pr₂O₃ grows as (110)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(111). These layers can also be overgrown epitaxially with silicon.

 

48)

Band Gap and Band Discontinuities at Crystalline Pr₂O₃/Si(001) Heterojunctions

H.-J. Osten, J.P. Liu, H.-J. Müssig

Applied Physics Letters 80, 297 (2002)

We report the experimental results on the band alignment of Pr₂O₃ films on Si(001) as prepared by molecular beam epitaxy. Using x-ray photoelectron spectroscopy, we obtain a valence band offset at the Pr₂O₃/Si(001) interface of (1.1+/-0.2) eV. High field tunneling was used to extract the conduction band offset of (0.5-1.5) eV. Thus, the Pr₂O₃/Si(001) interface band alignment is symmetric, desired for applying such materials in both n- and p-type devices. The band gap of bulk Pr₂O₃ should be between 2.5 and 3.9 eV. Using scanning tunneling spectroscopy, we find a surface-state band gap of about 3.2 eV for monolayer coverage. In agreement with recent pseudopotential calculations, the electron masses in the oxide appear to be very large. This effect, together with the suitable band offsets lead to the unusually low leakage currents recently measured.

 

47)

Analysis of Local Electrical Properties of Grain Boundaries in Si by Electron-beam-induced-current Techniques

S. Pandelov, W. Seifert, M. Kittler, J. Reif

Journal of Physics: Condensed Matter 14, 13161 (2002)

We report on temperature-dependent investigations of grain boundaries (GB) in p-type multicrystalline Si by means of two different electron-beam-induced-current (EBIC) methods. The so-called GB-EBIC technique is used to estimate the barrier height of the GB as a function of beam current and temperature. The barrier is found to decrease upon increase of injection level and decrease of temperature. EBIC investigations in standard geometry were performed for comparison. It is shown that the two EBIC techniques yield different information about the GB. Possible reasons of this behaviour are discussed.

 

46)

Advanced SPICE modelling of SiGe HBTs using VBIC model

B. Senapati, C. K. Maiti

IEEE Proceedings-Circuits, Devices and Systems 149(2), 129 (2002)

The vertical bipolar intercompany (VBIC) model has been applied to silicon-germanium heterojunction bipolar transistors (SiGe HBTs). The model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating. Several device parameters have been extracted from SiGe HBTs and implemented in the VBIC model. A comparison is made with the SPICE Gummel-Poon model. The usefulness and accuracy of the VBIC model for SiGe HBTs are demonstrated by way of comparison of simulated and measured room temperature device data.

 

45)

High Performance MOS Varactor SPICE Model

B. Senapati, K.-E. Ehwald, W. Winkler, F. Fürnhammer

Electronics Letters 38, 1416 (2002)

A model is presented for a three-terminal MOS varactor for RF applications. The accuracy of the MOS varactor model is demonstrated by comparing simulation and measured device data at room and high temperatures. The relative mean error of the S-parameters between the measured and simulated data are less than 4%.

 

44)

Carbon Doped Heterojunction Bipolar Transistors - Enhancing the Capability of SiGe Technology

B. Tillack, H.-J. Osten

Chip, issue 6, 33-35 (2002)

The incorporation of low concentrations of carbon (< 10²⁰ cm^-3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state‑of‑the‑art SiGe HBTs. C also enhances the high frequency performance, because it allows the use of a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if post‑epitaxial implants and anneals are applied.

 

43)

Application of Synchrotron Radiation Based X-Ray Microprobe Techniques for the Analysis of Recombination Activity of Metals Precipitated at Si/SiGe Misfit Dislocations

O.F. Vyvenko, T. Buonassisi, A.A. Istratov, E.R. Weber, M. Kittler, W. Seifert

Journal of Physics: Condensed Matter 14, 13079 (2002)

In this study we report application of synchrotron-radiation-based x-ray microprobe techniques (the x-ray-beam-induced current (XBIC) and x-ray fluorescence (Ic-XRF) methods) to the analysis of the recombination activity and space distribution of copper and iron in the vicinity of dislocations in silicon/silicon-germanium structures. A combination of these two techniques enables one to study the chemical nature of the defects and impurities and their recombination activity in situ and to map metal clusters with a micron-scale resolution. XRF analysis revealed that copper formed clearly distinguishable precipitates along the misfit dislocations. A proportional dependence between the XBIC contrast and the number of copper atoms in the precipitates was established. In hydrogen-passivated from-contaminated samples we observed clusters of iron precipitates which had no recombination activity detectable by the XBIC technique as well as iron clusters which were not completely passivated.

 

42)

Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon

P. Zaumseil, E. Bugiel, J.P. Liu, H.-J. Osten

Proc. GADEST 2001, in: Solid State Phenomena 82-84, 789 (2002)

We present structural investigations of Pr₂O₃ films grown epitaxially on Si(001) and Si(111) using ultrahigh vacuum electron beam evaporation. On (001) oriented Si surfaces, crystalline Pr₂O₃ grows as (110)-domains, with two orthogonal in-plane orientations, while perfect epitaxial growth is obtained on Si(111). We find that the structural quality of crystalline Pr₂O₃ films on Si (001) degrades and interfacial layer forms over time due to air exposure at room temperature. We show that the crystalline quality of the films can be stabilized by capping with Si. The structural degradation can be restored and stabilized by a short anneal in N₂. The temperature dependence of this recrystallization process is studied by in-situ XRD measurements.

 

41)

Application Range and Use of EHPi at IHP

D. Bolze

Proc. European Varian Ion Implantation Seminar, June 06-07, (2002)

 

40)

Design of Hardware Accelerator for a Power-Optimized Implementation of the IEEE 802.11 MAC Layer

D. Dietterle, K. Tittelbach-Helmrich, K.F. Dombrowski, R. Kraemer

Proc. 3rd Int. Conf. on Internet Computing, 225 (2002)

 

39)

Progress in TEM Holography of BiCMOS Devices

P. Formanek, E. Bugiel

Proc. 15th Int. Congress on Electron Microscopy, 301 (2002)

 

38)

A Dual-Mode Synchronous / Asynchronous CORDIC Processor

E. Grass, B. Sarker, K. Maharatna

Proc. of  the 8th IEEE International Symposium on Asynchronous Circuits and Systems, 76 (2002)

 

37)

Synthesisable High-Speed Synchronous Counters of Arbitrary Width

H. Gustat, F. Winkler

Proc. Forum on Design Languages (2002)

 

36)

Novel Collector Design for High-Speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth, J. Bauer, D. Bolze, E. Bugiel, J. Drews, K.-E. Ehwald, T. Grabolla, U. Haak, W. Höppner, D. Knoll, D. Krüger, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, P. Schley, D. Schmidt, R. Scholz, B. Tillack, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. Zaumseil

Proc. IEDM, 783 (2002)

 

35)

Elektrische Eigenschaften von Kristalldefekten in multikristallinen Si-Materialien und Solarzellen: Charakterisierung des Einflusses unterschiedlicher Behandlungen durch mikroskopische Techniken

M. Kittler, O. Krüger, W. Seifert

Freiberger Forschungshefte, B321, 166 (2002)

 

34)

BiCMOS Integration of SiGe:C Heterojunction Bipolar Transistor

D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, B. Tillack, W. Winkler, P. Schley

BCTM Procedings, IEEE, 162 (2002)

 

33)

BiCMOS Integration of SiGe:C Heterojunction Bipolar Transistors

D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, B. Tillack,  W. Winkler, P. Schley, A. Hunter

Proc. of  Compound Semiconductor Manufacturing Expo (2002)

 

32)

A Flexible, Low Cost, High Performance SiGe:C BiCMOS Process with a One-Mask HBT Module

D. Knoll, K.-E. Ehwald, B. Heinemann, A. Fox, K. Blum, H. Rücker, F. Fürnhammer, B. Senapati, R. Barth, U. Haak, W. Höppner, J. Drews, R. Kurps, S. Marschmeyer, H.H. Richter, T. Grabolla, B. Kuck, O. Fursenko, P. Schley, B. Tillack, Y. Yamamoto, K. Köpke, H.-E. Wulf, D. Wolansky, W. Winkler

Proc. IEDM, 775 (2002)

 

31)

Towards: User Defined Privacy in Location-aware Platforms

P. Langendörfer, R. Kraemer

Proc. 3rd Int. Conf. On Internet Computing, CSREA Press, 335 (2002)

 

30)

Plasma Etching of Low-k Materials for Back-End-of-Line Applications

S. Marschmeyer, H.H. Richter, H. Silz, D. Krüger, S. Günther, S. Chernjavski, V. Melnik, R. Barth

Proc. of the XIV Internat. Conf. on Gas Discharges and their Applications 2, 48 (2002)

 

29)

Optimizing the Downlink for Mobile Wireless Devices

M. Methfessel, H. Frankenfeldt, K.F. Dombrowski, R. Kraemer

Proc. Wireless and Optical Communications (2002)

 

28)

An Improved Model for High-Frequency Noise in BJTs and HBTs Interpolating Between the Quasi-Thermal Approach and the Correlated-Shot-Noise Model

J. Möller, B. Heinemann, F. Herzel

Proceedings of the 2002 IEEE BCTM, 228 (2002)

 

27)

Composition and Stability of the High-k Dielectric (Pr₂O₃) / Si(001) Interface

H.-J. Müssig, D. Schmeißer

Proc. of the Materials Week, Int. Congress on Advanced Materials, their Processes and Applications (2002)

 

26)

Band Alignment at Crystalline Pr₂O₃/Si(001) Heterojunctions

H.-J. Müssig, J.P. Liu, H.-J. Osten

Verhandlungen der Deutschen Physikalischen Gesellschaft: DPG-Frühjahrstagung Regensburg, (2002)

 

25)

Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects

H. Rücker, B. Heinemann, R. Barth, D. Bolze, V. Melnik, R. Kurps, D. Krüger

Proc. ESSDERC 2002, 32th European Solid State Device Research Conference,199 (2002)

 

24)

Process Integration of Crystalline Pr₂O₃ High-k Gate Dielectrics

U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland, G. Tzschöckel, H.-J. Osten, A. Fissel, H.-J. Müssig

Proc. ESSDERC 2002, 32th European Solid State Device Research Conference, 407 (2002)

 

23)

Process Integration of Crystalline Pr₂O₃ High-k Gate Dielectrics

U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland, G. Tzschöckel, H.-J. Osten, A. Fissel, H.-J. Müssig

Proceedings of the Materials Week, Int. Congress on Advanced Materials, their Processes and Applications (2002)

 

22)

Über Möglichkeiten der Charakterisierung von mc-Si durch SiPHER (Silicon PHotoEnhanced Recombination)

W. Seifert, O. Krüger, M. Kittler, V. Higgs

Freiberger Forschungshefte B321, 161 (2002)

 

21)

Modelling of Self-heating Effects in SiGe-HBTs

B. Senapati, C. K. Maiti

Proceedings of the 11th International Workshop on the Physics of Semiconductor Devices, SPIE, 4746, 718 (2002)

 

20)

OFDM Synchronizer Implementation for an IEEE 802.11a Compliant Modem

A. Troya, K. Maharatna, M. Krstic, E. Grass, R. Kraemer

Proc. of the IASTED Int. Conference on Wireless and Optical Communications (2002)

 

19)

Application of Synchrotron Radiation Based X-Ray Microprobe Techniques for the Analysis of Recombination Activity of Metals Precipitated at Si/SiGe Misfit Dislocations

O.F. Vyvenko, T. Buonassisi, A.A. Istratov, E.R. Weber, M. Kittler, W. Seifert

Proc. 12th Workshop on Crystalline Si Solar Cell Materials and Processes, 111 (2002)

 

18)

High Performance and Low Voltage Divider Circuits Fabricated in SiGe:C HBT Technology

W. Winkler, J. Borngräber, B. Heinemann, P. Weger, H. Gustat

Proc. ESSCIRC, 827 (2002)

 

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Additional Papers Accepted for Publication

 

17)

Oxygen Precipitates in Annealed Nitrogen Doped 300 mm Cz-Si

V.D. Akhmetov, H. Richter, O. Lysisytskiy, T. Müller, R. Wahlich

Materials Science in Semiconductor Processing

 

16)

Temperature Behaviour of Extended Defects in Solar Grade Silicon Investigated by Photoluminescence and EBIC

T. Arguirov, W. Seifert, M. Kittler, J. Reif

Materials Science and Engineering B

 

15)

Optical Scatterometry for the Measurements of 70 nm Resist Patterns

J. Bischoff, S. Gliech, J. Bauer, A. Duparre

Proc. SPIE 2001, Metrology, Inspection, and Process Control for Microlithography XVI

 

14)

Raman-Spectroscopic Determination of in-homogeneous Stress in Submicron Silicon Devices

B. Dietrich, V. Bukalo, A. Fischer, K.F. Dombrowski, E. Bugiel, B. Kuck, H.H. Richter

Applied Physics Letters

 

13)

Integrated FSK Demodulator with Very High Sensitivity

H. Gustat, F. Herzel

IEEE Journal of Solid-State Circuits

 

12)

Influence of Contamination on the Electrical Activity of Crystal Defects in Silicon

M. Kittler, W. Seifert, K. Knobloch

Microelectronic Engineering

 

11)

Influence of Contamination on the Dislocation-related C1 Line Observed in DLTS Spectra of n-type Silicon: A Comparison with EBIC

K. Knobloch, M. Kittler, W. Seifert

Journal of Applied Physics

 

10)

Raman Measurement of Stress Distribution in Multicrystalline Silicon Samples

S. Kouteva-Arguirova, W. Seifert, M. Kittler, J. Reif

Materials Science and Engineering B

 

9)

Transient Processes and Structural Transformations in Si_xGe_1-x Layers During Oxygen Implantation and Sputtering

D. Krüger, A.A. Efremov, J. Murota, B. Tillack, R. Kurps, G. Ph. Romanova

Applied Surface Science

 

8)

M-Commerce why it does not fly (yet)?

P. Langendörfer

Proc. Int. Conference on Advances in Infrastructure for e-Business, e-Education, and e-Medicine on the Internet, 29.07.-02.08.2002

 

7)

Ab-Initio Calculation of the Elastic Constants and Thermal Expansion Coefficients of Laves Phases

B. Mayer, H. Anton, E. Bott, M. Methfessel, J. Sticht, J. Harris, P.C. Schmidt

Intermetallics

 

6)

Influence of N₂-H₂ Plasma Treatment on Chemical Vapor Deposited TiN Multilayer Structures for Advanced CMOS Technologies

V.P. Melnik, A. Goryachko, S. Chernjavski, D. Wolansky, E. Bugiel, D. Krüger

Materials Science and Engineering B

 

5)

Mechanical Properties of Nitrogen-Doped CZ Silicon Single Crystals

V. Orlov, H. Richter, A. Fischer, J. Reif, T. Müller, R. Wahlich

Microelectronics Engineering

 

4)

Mechanical Properties of Nitrogen-Doped CZ Silicon Single Crystals

V. Orlov, H. Richter, A. Fischer, J. Reif, T. Müller, R. Wahlich

Proc. of the E-MRS IUMRS ICEM 2002 Meeting, Sub-Quarter-Micron Silicon Issues in the 200/300 mm Conversion Area

 

3)

Ge Instabilities Near Interfaces in Si/SiGe/Si Heterostructures

D. Schmeißer, K. Pressel, Y. Yamamoto, B. Tillack, D. Krüger

Materials Science and Engineering B

 

2)

Implant Dose Monitoring by MOS C-V Measurements

R. Sorge

Microelectronics Reliability

 

1)

Manufacturability of SiGe:C Epitaxy for Heterojunction Bipolar Transistors integrated in a BiCMOS Technology

B. Tillack, D. Knoll, Y. Yamamoto, B. Heinemann, K.-E. Ehwald, W. Winkler, H. Rücker

Proc. RTP Symposium at the ECS Meeting Symposium Rapid Thermal and other Short-Time Processing Technologies III May 12-17, 2002

 

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Invited Presentations

 

33)

Application Range and Use of EHPi at IHP

D. Bolze

European Varian Ion Implantation Seminar, Dresden, 2002, June 06-07, Germany

 

32)

Process Control of a 0.25µm SiGe:C BiCMOS Technology by Spectroscopic Ellipsometry and Spectrometry

G.G. Fischer, J. Bauer, B. Tillack, T. Stoll

Workshop Ellipsometrie, Berlin, 2002, Febr. 18-20, Germany

 

31)

High-Frequency Noise in SiGe HBTs

F. Herzel

ChiPPS, Prague, 2002, Oct. 13-17, Czechia

 

30)

Electrical and Optical Activity of Dislocations in Si: Role of Metal Contamination

M. Kittler

ChiPPS, Prague, 2002, Oct. 13-17, Czechia

 

29)

Elektrische Eigenschaften von Versetzungen in Silicium

M. Kittler

Physik-Seminar Göttingen, 2002, Oct. 24, Germany

 

28)

Influence of Contamination on the Electrical Activity of Crystal Defects in Silicon

M. Kittler, W. Seifert, K. Knobloch

Sino-German Symposium, Hangzhou, 2002, June, China

 

27)

BiCMOS Integration of SiGe:C Heterojunction Bipolar Transistor

D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, B. Tillack, W. Winkler, P. Schley

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), Monterey, 2002, Sept. 30 - Oct. 1, USA

 

26)

BiCMOS Integration of SiGe:C Heterojunction Bipolar Transistors

D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker, B. Tillack, W. Winkler, P. Schley, A. Hunter

Compound Semiconductor Manufacturing Expo (CS-MAX), San Jose, 2002, Nov. 11-13, USA

 

25)

Wireless Engine: A Concept for New Wireless Internet Applications

R. Kraemer

Gründungsworkshop MNZ "Modellierung, Optimierung und Berechnung komplexer Systeme“, BTU Cottbus, 2002, March 06, Germany

 

24)

Wireless Internet System and Semiconductor Technology

R. Kraemer

Visit of Investment Bankers, Potsdam, 2002, April 11, Germany

 

23)

Asynchronous Circuit Design & Globally-Asynchronous Locally-Synchronous (GALS) Systems

M. Krstic

Seminar at Faculty of Electronic Engineering, Nis, 2002, Dec. 25, Yugoslavia

 

22)

Towards: User Defined Privacy in Location-aware Platforms

P. Langendörfer, R. Kraemer

3rd Int. Conf. on Internet Computing, Las Vegas, 2002, June 24-26, USA

 

21)

Can Si(113) Wafers be an Alternative to Si(001)?

H.-J. Müssig

8th International Conference on Electronic Materials, IUMRS-ICEM, Xi'an, 2002, June 10-14, China   

 

20)

Ultradünnes SiO₂ auf Si(113) und ein alternatives Material mit großer Dielektrizitätskonstante

H.-J. Müssig

Vortrag in der AMD Saxony Manufacturing GmbH Dresden, 2002, March 22, Germany

 

19)

Pr₂O₃ - ein alternatives Gate-Material mit großer Dielektrizitätskonstante

H.-J. Müssig

Seminar des Institutes für Experimentalphysik der Freien Universität Berlin, 2002, April 16, Germany

 

18)

Pr₂O₃ - ein alternatives Gate-Material mit grosser Dielektrizitätskonstante

H.-J. Müssig

BTU Cottbus, Experimentelle Physik - Sensorik, 2002, May 7, Germany

 

17)

Können Si(113)-Wafer eine Alternative zu Si(001) sein?

H.-J. Müssig

Nanoelektronik-Seminar des Institutes für Halbleiterbauelemente und Werkstoffe der Universität Hannover, 2002, July 08, Germany

 

16)

Können Si(113)-Wafer eine Alternative zu Si(001) sein?

H.-J. Müssig

Wacker Siltronic Burghausen, 2002, July 26, Germany

 

15)

Si(113) - from Scientific Lab to Alternative Wafer

H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert

German-Chinese Workshop Impurities and Defects in Silicon Materials used for ULSI and Photovoltaics, Hangzhou, 2002, June 08-09, China

 

14)

Technologies for a Mean and Restless World

A. Ourmazd

SEMI ISS Europe, Lissabon, 2002, Febr. 18, Portugal

 

13)

Technologiestandort Brandenburg – Ist Frankfurt (Oder) ein Modell?

A. Ourmazd

Vortragsveranstaltung der IHK Potsdam, "Wirtschaft im Dialog”, Potsdam, 2002, Febr. 27, Germany

 

12)

Microelectronics and Man: Are we Getting Ahead of Ourselves?

A. Ourmazd

Abschlussfeier Sommersemester, Freie Universität Berlin, 2002, July 19, Germany

 

11)

Materialrelevante Herausforderungen für die perspektivische Mikroelektronik

H. Richter

Leibniz-Sozietät Berlin, Staatsbibliothek Berlin, 2002, March 21, Germany

 

10)

Materialrelevante Herausforderungen für die perspektivische Mikroelektronik

H. Richter

Werkstofftechnisches Kolloquium Universität Magdeburg, 2002, April 23, Germany

 

9)

Is Silicon Transistor Scaling Running Out of Steam?

H. Rücker

NANO-7, Malmö, 2002, June 27, Sweden

 

8)

SiGe:C Heterobipolartransistoren: Von der Materialforschung zur Chipherstellung

H. Rücker, B. Heinemann, D. Knoll, K.-E. Ehwald

DPG-Frühjahrstagung, Regensburg, 2002, March, Germany

 

7)

SiGe BiCMOS Technology: From Material to Device

B. Tillack

Tohoku University Sendai, 2002, June 07, Japan

 

6)

SiGe:C Epitaxy for Heterojunction Bipolar Transistors Integrated in a BiCMOS Technology

B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, H. Rücker

Symposium ”Epitaxial Technology 2002 – Strategie Symposium”, München, 2002, June 18, Germany

 

5)

Manufacturability of SiGe:C and Si Epitaxy for Heterojunction Bipolar Transistors Integrated in a BiCMOS Technology

B. Tillack, D. Knoll, Y. Yamamoto, B. Heinemann, K.-E. Ehwald, W. Winkler, H. Rücker

RTP Symposium at the ECS Meeting Symposium ”Rapid Thermal and other Short-Time Processing Technologies III”, Philadelphia, 2002, May 12-17, USA      

 

4)

Atomic Layer Doping of SiGe – Fundamentals and Device Application

B. Tillack, Y. Yamamoto

ASM International EPSILON User Meeting, München, 2002, Sept. 26, Germany

 

3)

SiGe and SiGe:C Epitaxial Process Results for HBT Application on 200 mm and 300 mm Wafers

B. Tillack, Y. Yamamoto, J. Italiano, H. Jia

E-MRS, Strasbourg, 2002, June, France

 

2)

X-ray Diffractometry and Reflectometry and their Application in Semiconductor Material Research

P. Zaumseil

IHW, University Hannover, 2002, Dec., Germany

 

1)

Characterization of Ultra Thin Layers by XRR

P. Zaumseil

Infineon, Dresden, 2002, August, Germany

 

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Presentations

 

60)

Oxygen Precipitates in Annealed Nitrogen Doped 300 mm Cz-Si

V.D. Akhmetov, H. Richter, O. Lysisytskiy, T. Müller, R. Wahlich

E-MRS 2002, Spring Meeting, Symposium : The 300 mm Silicon Era: Material, Equipment, Technology, Strasbourg, 2002, June 18-21, France

 

59)

Photoluminescence and EBIC Recombination Behaviour of Extended Defects in Solar Grade Silicon

T. Arguirov, W. Seifert, M. Kittler, J. Reif

DPG-Frühjahrstagung, Regensburg, 2002, March 11-15, Germany

 

58)

Spectroscopic Ellipsometry for In-line Process Control of SiGe and SiGe:C HBT Film Stacks

J. Bauer, Y. Yamamoto, P. Zaumseil, A. Goryachko, O. Fursenko, K. Köpke, B. Tillack, T. Stoll

Workshop Ellipsometrie, Berlin, 2002, Febr. 18-20, Germany

 

57)

Direct STI, entwickelt auf der Peter Wolters PM200 Gemini

K. Blum, B. Kuck

CMP User Meeting, Neuss, 2002, Oct. 25, Germany

 

56)

Möglichkeiten und Grenzen des Reverse-Engineering an Schaltkreisen in sub-0.25 µm Technologien

E. Bugiel, R. Kurps, S. Chernjavsky, A. Goryachko, D. Krüger

Regionaler Workshop "Fehleranalyse an Si basierten Technologien”, Frankfurt (Oder), 2002, Jan. 23, Germany

 

55)

Influence of Defects on Behavior of Ultrathin Oxide Films

J. Dabrowski

Verhandlungen der DPG, Frühjahrstagung, Regensburg, 2002, March 11-15, Germany

 

54)

Design of Hardware Accelerator for a Power-Optimized Implementation of the IEEE 802.11 MAC Layer

D. Dietterle, K. Tittelbach-Helmrich, K.F. Dombrowski, R. Kraemer

3rd Int. Conf. on Internet Computing (IC 2002), Las Vegas, 2002, June 24-27, USA

 

53)

Einsatzbeispiele für FIB in Problemen der Schaltungsmodifizierung und Fehlersuche

N. Fiebig, R. Kurps, I. Shevchenko

Regionaler Workshop "Fehleranalyse an Si basierten Technologien” Frankfurt (Oder), 2002, Jan. 23, Germany

 

52)

Defektinspektion an SiGe:C-Epischichten auf strukturierten Wafern

G.G. Fischer, W. Höppner, D. Knoll, B. Tillack, J. Kavanagh

Arbeitskreis Epitaxie, Heilbronn, 2002, Nov. 28, Germany

 

51)

Progress in TEM Holography of BiCMOS Devices

P. Formanek, E. Bugiel

15th Int. Congress on Electron Microscopy, Durban, 2002, Sept. 1-6, South Africa

 

50)

Development of Spectroscopic Ellipsometry as In-Line Control Technique for Co Sallicide Process

O. Fursenko, J. Bauer, A. Goryachko, D. Bolze, P. Zaumseil, D. Krüger, E. Bugiel, D. Wolansky

Workshop Ellipsometrie Berlin, 2002, Febr. 18-20, Germany

 

49)

Development of Spectroscopic Ellipsometry as In-Line Control Technique for Co Sallicide Process

O. Fursenko, J. Bauer, A. Goryachko, D. Bolze, P. Zaumseil, D. Krüger, E. Bugiel, D. Wolansky

12. German RTP User Meeting, Frankfurt (Oder), 2002, April 25, Germany

 

48)

A Dual-Mode Synchronous / Asynchronous CORDIC Processor

E. Grass, B. Sarker, K. Maharatna

The 8th IEEE International Symposium on Asynchronous Circuits and Systems

(ASYNC’ 2002), Manchester, 2002, Apr. 08-11, UK

 

47)

Stationen der SiGe:C-HBT-Entwicklung am IHP

B. Heinemann

Elektrotechnisches Kolloquium / Universität Bremen, 2002, May 08, Germany

 

46)

Novel Collector Design for High-Speed SiGe:C HBTs

B. Heinemann, H. Rücker, R. Barth, J. Bauer, D. Bolze, E. Bugiel, J. Drews, K.-E. Ehwald, T. Grabolla, U. Haak, W. Höppner, D. Knoll, D. Krüger, B. Kuck, R. Kurps, S. Marschmeyer, H.H. Richter, P. Schley, D. Schmidt, R. Scholz, B. Tillack, W. Winkler, D. Wolansky, H.-E. Wulf, Y. Yamamoto, P. Zaumseil

IEDM, San Francisco, 2002, Dec. 8-11, USA

 

45)

Welche Zukunft hat das kristalline Silicium ?

M. Kittler, W. Seifert

1. BTU-IHP Joint Workshop, BTU Cottbus, 2002, Dec. 18, Germany

 

44)

IHP-Arbeiten zum KoSi-Projekt

M. Kittler, W. Seifert

KoSi-Arbeitstreffen, Eisenach, 2002, September, Germany

 

43)

Influence of Contamination on the Electrical Activity of Crystal Defects in Silicon

M. Kittler, W. Seifert, K. Knobloch

International Conference on Electronic Materials ICEM2002, Symposium M, Xi’an, 2002, June 10-14, China

 

42)

A Flexible, Low Cost, High Performance SiGe:C BICMOS Process with a One-Mask HBT Module

D. Knoll, K.-E. Ehwald, B. Heinemann, A. Fox, K. Blum, H. Rücker, F. Fürnhammer, B. Senapati, R. Barth, U. Haak, W. Höppner, J. Drews, R. Kurps, S. Marschmeyer, H.H. Richter, T. Grabolla, B. Kuck, O. Fursenko, P. Schley, B. Tillack, Y. Yamamoto, K. Köpke, H.-E. Wulf, D. Wolansky, W. Winkler

IEDM, San Francisco, 2002, Dec. 08-11, USA

 

41)

Investigation of Strain in mc-Si by Means of Raman Spectroscopy

S. Kouteva-Arguirova, W. Seifert, M. Kittler, J. Reif

DPG-Frühjahrstagung, Regensburg, 2002, March 11-15, Germany

 

40)

Wireless Connectivity: Technologien für neue, drahtlose Internet-Anwendungen

R. Kraemer

ONLINE, Düsseldorf, 2002, Jan. 28 - Febr. 01, Germany

 

39)

Bluetooth Based Wireless Internet Applications for Indoor Hot Spots: Experience of a Successful Experiment During CeBIT 2001

R. Kraemer

Ringvorlesung "Das Internet und seine Anwendungen” BTU Cottbus, 2002, April 17, Germany

 

38)

Wireless Engine: A Concept for New Wireless Internet Applications

R. Kraemer

Marie-Curie-Gymnasium, Wittenberge, 2002, April 24, Germany

 

37)

Realisierung von LAN und PAN Profilen in Accessprodukten

R. Kraemer

Bluetooth – 3. Kongress, Augsburg, 2002, May 14-15, Germany

 

36)

Aktuelle Entwicklungen in der Mikroelektronik: Bedeutung für KMUs,

R. Kraemer

5. Deutsch-Polnischer Innovations-und Technologietag, Guben, 2002, Oct. 10.-11, Germany

 

35)

Wireless LAN and Communication Standards

R. Kraemer

International Summer Study Program for Microelectronics, Frankfurt (Oder), 2002, Aug. 12-23, Germany

 

34)

Dopant and Matrix Atom Segregation at Interface in Si/SiGe/Si Heterostructures: Characterization with High Depth Resolution

D. Krüger, D. Schmeisser, V. Melnik, R. Kurps, Y. Yamamoto, B. Tillack

2nd International Workshop on "New Group IV (Si-Ge-C) Semiconductors” Kofu, 2002, June 02-04, Japan

 

33)

Micro-Topology of Crater Formation During Normal Incidence Oxygen Bombardment of Si and SiGe

D. Krüger, R. Kurps, G. Weidner, E. Bugiel

SIMS Europe, Münster, 2002, Sept. 15-17, Germany

 

32)

Characterization of Ultra-Thin High-k Dielectrics for Advanced Si CMOS Technologies

D. Krüger, V. Melnik, E. Bugiel, P. Zaumseil, A. Goryachko, H.-J. Osten

SIMS Europe, Münster, 2002, Sept. 15-17, Germany

 

31)

M-Commerce why it does not fly (yet)?

P. Langendörfer

Int. Conference on Advances in Infrastructure for e-Business, e-Education, and e-Medicine on the Internet, Rom, 2002, July 29 - Aug. 02, Italy

 

30)

Plasma Etching of Low-k Materials for Back-End-of-Line Applications

S. Marschmeyer, H.H. Richter, H. Silz, D. Krüger, S. Günther, S. Chernjavski, V. Melnik, R. Barth

XIV Internat. Conf. on Gas Discharges and their Applications, Liverpool, 2002, Sept. 01-06, UK

 

29)

Influence of N₂-H₂ Plasma Treatment on Chemical Vapor Deposited TiN Multilayer Structures for Advanced CMOS Technologies

V. Melnik, A. Goryachko, S. Chernjavski, D. Wolansky, E. Bugiel, D. Krüger

EMRS Spring Meeting, Strasbourg, 2002, June 18-21, France

 

28)

ToF-SIMS Analysis of Process Induced Metal Contamination Using a New Kind of Reference Samples

V. Melnik, R. Kurps, J. Drews, D. Krüger

SIMS Europe, Münster, 2002, Sept. 15-17, Germany

 

27)

Einsatz von ToF-SIMS für die Fehleranalyse hochintegrierter Technologien

V. Melnik, R. Kurps, D. Krüger

Regionaler Workshop "Fehleranalyse an Si basierten Technologien” Frankfurt (Oder), 2002, Jan. 23, Germany

 

26)

Optimizing the Downlink for Mobile Wireless Devices

M. Methfessel, H. Frankenfeldt, K.F. Dombrowski, R. Kraemer

Wireless and Optical Communications (WOC 2002), Banff, 2002, July 17-19, Canada

 

25)

An Improved Model for High-Frequency Noise in BJTs and HBTs Interpolating Between the Quasi-Thermal Approach and the Correlated-Shot-Noise Model

J. Möller, B. Heinemann, F. Herzel

IEEE BCTM, Monterey, 2002, Sept. 29 - Oct. 3, USA

 

24)

Composition and Stability of the High-k Dielectric (Pr₂O₃) / Si(001) Interface

H.-J. Müssig, D. Schmeißer

Materials Week, Int. Congress on Advanced Materials, their Processes and Applications, Munich, 2002, Sept. 30 - Oct. 2, Germany

 

23)

The Interface Between Pr₂O₃ and Si(001): A Synchrotron Radiation Study

H.-J. Müssig, D. Schmeißer

12th Workshop on Dielectrics in Microelectronics (WoDiM), Grenoble, 2002, Nov. 18-20, France

 

22)

Band Alignment at Crystalline Pr₂O₃/Si(001) Heterojunctions

H.-J. Müssig, J.P. Liu, H.-J. Osten

DPG-Frühjahrstagung, Regensburg, 2002, March 11-15, Germany

 

21)

Mechanical Properties of Nitrogen-Doped Silicon Single Crystals

V. Orlov, H. Richter, A. Fischer, J. Reif, T. Müller, R. Wahlich

E-MRS, Spring Meeting, Symposium: The 300 nm Silicon Era: Material, Equipment, Technology, Strasbourg, 2002, June 18-21, France

 

20)

Analysis of Local Electrical Properties of Grain Boundaries in Si by Electron-beam-induced-current Techniques

S. Pandelov, W. Seifert, M. Kittler, J. Reif

DPG-Frühjahrstagung, Regensburg, 2002, March 11-15, Germany

 

19)

Physik der Halbleitertechnologie - ein Zukunftsorientierter Studiengang der BTU Cottbus

H. Richter

Bundesfachschaftstagung Physik - ZaPF, Cottbus, 2002, May 10, Germany

 

18)

50 Jahre Halbleiterelektronik in Berlin-Brandenburg: Potentiale neuer Chancen

H. Richter

VDE Bezirksverein Berlin-Brandenburg, VDE Haus Berlin, Hauptvortrag, 2002, Nov. 28, Germany

 

17)

Das IHP-BTU Joint Lab, ein Partner für Forschung und Lehre: Vision, Status und Ausblick

H. Richter

1. BTU-IHP Joint Workshop, BTU Cottbus, 2002, Dec. 18, Germany

 

16)

Plasma Etching of Carbon-Containing SiO₂-like low k-materials

H.H. Richter, S. Marschmeyer, H. Silz, D. Krüger, S. Chernjavski, S. Günther

DPG-Frühjahrstagung, Symposium Plasmaoberflächentechnik, Beschichten, Ätzen und Modifizieren (SYPO), Regensburg, 2002, March 11-15, Germany

 

15)

Fehleranalyse an Sensoren mittels FIB

R. Rothe , R. Kurps, R. Naumann

Regionaler Workshop "Fehleranalyse an Si basierten Technologien”, Frankfurt (Oder), 2002, Jan. 23, Germany

 

14)

Antimony as Substitute for Arsenic to Eliminate Enhanced Diffusion Effects

H. Rücker, B. Heinemann, R. Barth, V. Melnik, D. Bolze, R. Kurps, D. Krüger

ESSDERC, 32th European Solid State Device Research Conference, Firence, 2002, Sept. 22-26, Italy

 

13)

Asynchronous CORDIC Processor Implementation

B. Sarker, E. Grass, K. Maharatna

2nd ACiD-WG Workshop of the European Commission's 5th Programme, Munich, 2002, Jan. 28-29, Germany

 

12)

Evidence for a Mixed Silicon-Praseodymium Oxide Film Formation at the Pr₂O₃/Si(001) Interface

D. Schmeißer, H.-J. Müssig

E-MRS Spring Meeting, Strasbourg, 2002, June 18-21, France

 

11)

Ge Instabilities Near Interfaces in Si/SiGe/Si Hetereostructures

D. Schmeißer, K. Pressel, Y. Yamamoto, B. Tillack, D. Krüger

E-MRS Spring Meeting, Strasbourg, 2002, June 18-21, France

 

10)

The Pr₂O₃/Si(001) Interface Studies by Synchrotron Radiation Photo-Electron Spectroscopy

D. Schmeißer, H.-J. Müssig

NANO-7/ECOSS-21, Malmö, 2002, June 24-28, Sweden

 

9)

Process Integration of Crystalline Pr₂O₃ High-k Gate Dielectrics

U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland, G. Tzschöckel, H.-J. Osten, A. Fissel, H.-J. Müssig

ESSDERC - 32th European Solid State Device Research Conference, Firence, 2002, Sept. 22-26, Italy

 

8)

Process Integration of Crystalline Pr₂O₃ High-k Gate Dielectrics

U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland, G. Tzschöckel, H.-J. Osten, A. Fissel, H.-J. Müssig

Materials Week, Int. Congress on Advanced Materials, their Processes and Applications, Munich, 2002, Sept. 20 -Oct. 2, Germany

 

7)

Einfluß einer SiN-Beschichtung auf die Rekombinationseigenschaften von EFG und Baysix

W. Seifert, M. Kittler

KoSi-Arbeitstreffen, Eisenach, 2002, September, Germany

 

6)

EBIC- und DLTS-Untersuchungen zur Lebensdauerverteilung an Baysix-Vertikalscheiben

W. Seifert, M. Kittler

KoSi-Arbeitstreffen, Eisenach, 2002, March, Germany

 

5)

Modelling of RF LDMOS Transistors Using BSIM3

B. Senapati, K.-E. Ehwald, I. Shevchenko, V. Dykyy, F. Fürnhammer

MOS-AK, Erfurt, 2002, Sept., Germany

 

4)

OFDM Synchronizer Implementation for an IEEE 802.11a Compliant Modem

A. Troya, K. Maharatna, M. Krstic, E. Grass, R. Kraemer

IASTED International Conference on Wireless and Optical Communications, Banff, 2002, July 17-19, Canada

 

3)

High Performance and Low Voltage Divider Circuits Fabricated in SiGe:C HBT Technology

W. Winkler, J. Borngräber, B. Heinemann, P. Weger, H. Gustat

ESSCIRC, Florenz, 2002, Sept. 24-26, Italy

 

2)

Spectroscopic Ellipsometry for In-line Process Control of SiGe and SiGe:C HBT Film Stacks

Y. Yamamoto, J. Bauer, P. Zaumseil, A. Goryachko, O. Fursenko, K. Köpke, B. Tillack, T. Stoll

2nd International Workshop on "New Group IV (Si-Ge-C) Semiconductors” Kofu, 2002, June 2-4, Japan

 

1)

Optimizing the Pre-Epitaxy Cleaning Regime for BiCMOS SiGe:C HBTs

Y. Yamamoto, B. Tillack, D. Knoll, K. Köpke

2nd International Workshop on “New Group IV (Si-Ge-C) Semiconductors”, Kofu, 2002, June 2-4, Japan

 

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Reports

 

4)

Device Concept for Subband Structure Modulation to Enhance the Current Drive in Short-Channel Si FETs

A. Fischer

Project Title Acronym: Strained-Si MOSFET

 

3)

Strukturübertragung in Low-k-Materialien für 0,11 µm-Technologien

S. Marschmeyer, H.H. Richter, H. Silz, S. Günther, D. Krüger

Report zum Projekt „Isolatorätzprozesse” IHP

 

2)

Adsorption und Epitaxie auf Si(113)

H.-J. Müssig

Abschlussbericht zum DFG-Projekt

 

1)

The Pr₂O₃/Si(001) Interface: a Mixed Si-Pr Oxide

D. Schmeißer, P. Hoffmann, H.-J. Müssig

BESSY-Jahresbericht

 

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Books

 

4)

ChiPPS 2002 Proceedings

J. Dabrowski (Ed.)

in: Materials Science in Semiconductor Processing

accepted

 

3)

Oxidation of Si(113): Physics and Technological Perspective

H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert

Recent Developments in Vacuum Science and Technology, Transworld Research, Kerala, India, 2003

book chapter accepted

 

2)

SiGe:C Heterobipolartransistoren: Von der Materialforschung zur Chipherstellung

H. Rücker, B. Heinemann, D. Knoll, K.-E. Ehwald

Advances in Solid State Devices Vol. 42 / ed. by R. Kramer, Berlin Springer Verl., 2002, p.471

 

1)

Suppression of Boron Diffusion by Carbon: A New Route to Advanced Heterobipolar Transistors

H. Rücker, H.-J. Osten

Silicon Germanium Alloys: Growth, Properties and Applications, ed. by S.T. Pantelides, S. Zöllner, New York : Taylor and Francis, 2002

 

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Patents

 

18)

System und Verfahren zur Standortbestimmung

B. Dietrich, R. Kraemer

Internationale Patentanmeldung IHP.207.PCT, AnmAZ: PCT/EP02/13474

 

17)

Steuereinheit und Verfahren zum Steuern einer Empfangseinheit

K. F. Dombrowski

Internationale Patentanmeldung IHP.217.PCT, AnmAZ: PCT/EP02/13617

 

16)

DMOS-Transistor

K.-E. Ehwald

Internationale Patentanmeldung IHP.209.PCT, AnmAZ: PCT/EP02/09184

 

15)

BiCMOS-Struktur, Verfahren zu ihrer Herstellung und Bipolartransistor für eine BiCMOS-Struktur

K.-E. Ehwald, A. Fox, D. Knoll, B. Heinemann, S. Marschmeyer, K. Blum

Internationale Patentanmeldung IHP.211.PCT, AnmAZ: PCT/EP02/13858

 

14)

Bipolarer Transistor

B. Heinemann, D. Knoll, K.-E. Ehwald, D. Krüger, B. Tillack, W. Mehr, H.-J. Osten, W. Winkler, A. Ourmazd, H. Rücker

Internationale Patentanmeldung IHP.205.PCT, AnmAZ: PCT/EP02/13620

 

13)

Halbleitervorrichtung und Verfahren zu ihrer Herstellung

B. Heinemann, K.-E. Ehwald, D. Knoll, H. Rücker

Internationale Patentanmeldung IHP.224.PCT, AnmAZ: PCT/EP/02/13622

 

12)

MOS Transistor mit Praseodym-Silicid-Kontakten und Verfahren zu seiner Herstellung in CMOS- und BiCMOS-Technologien

D. Krüger, A. Goryachko, R. Kurps, J.P. Liu, H.-J. Osten

Internationale Patentanmeldung: IHP.201.PCT, AnmAZ: PCT/EP02/05773

 

11)

Halbleiterbauelement

G. Lippert

DE- Patentanmeldung IHP.226.02, AnmAZ: 102 15 328.0

 

10)

CORDIC-Einheit

K. Maharatna, S. Banerjee, A.S. Dhar, E. Grass,

Internationale Patentanmeldung IHP.222.PCT, AnmAZ: PCT/EP02/14695

 

9)

Halbleiterkondensator mit Praseodymoxid als Dielektrikum

H.-J. Müssig

DE-Patentanmeldung IHP.228.02, AnmAZ: 102 18 799.1

 

8)

Halbleiterkondensator und damit aufgebauter MOSFET

H.-J. Müssig

DE-Patentanmeldung IHP.230.02, AnmAZ: 102 30 674.5-33

 

7)

Halbleiterbauelement mit Praseodymoxid-Dielektrikum

H.-J. Müssig, D. Schmeisser

DE-Patentanmeldung IHP.234.02, AnmAZ: 102 45 590.2

 

6)

Verfahren zur Herstellung eines elektronischen Bauelements mit einer Praseodymoxid-Schicht

H.-J. Müssig, U. Schwalke

DE-Patentanmeldung IHP.235.02, AnmAZ: 102 44 862.0

 

5)

Verfahren und Vorrichtung zum Herstellen dünner epitaktischer Halbleiterschichten

G. Ritter, B. Tillack, D. Wolansky, T. Grabolla

Internationale Patentanmeldung IHP.208.PCT, AnmAZ: PCT/EP02/08296

 

4)

Verfahren und Vorrichtung zur Fehlerkorrektur von Multiplex-Signalen

A. Troya, K. Maharatna, M. Krstic

DE-Patentanmeldung IHP.232.02, AnmAZ: 102 48 507.0

 

3)

Synchronizer

A. Troya, K. Maharatna, M. Krstic, E. Grass

DE-Patentanmeldung IHP.233.02, AnmAZ: 02 090 257.3

 

2)

Bauelement zum Schutz vor hohen Spannungen in elektronischen Schaltungen

W. Winkler

DE-Patentanmeldung IHP.223.01, AnmAZ: 102 09 069.6

 

1)

Halbleitervaraktor und damit aufgebauter Schwingkreis

W. Winkler

DE-Patentanmeldung IHP.229.02, AnmAZ: 102 22 764.0-33

 

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