Publications 2001
Publications | Additional Papers Accepted for Publications | Invited Presentations | Presentations | Technical Reports | Books / Proceedings / Dissertations | Patents
Publications
68)
Native Defects and Complexes in SiC
F. Bechstedt , A. Fissel, J. Furthmüller, U. Grossner, A. Zywietz
Journal of Physics: Condensed Matter 13, 9027 (2001)
Prototypical native defects, in particular monovacancies, are studied using ab initio density functional theory and the local spin-density approximation. Several properties such as the energetics, geometry, electronic structure, and spin states are discussed regarding their dependence on the chemical nature, the preparation conditions, and the polytype of the SiC crystal. Consequences of the defects are derived for the doping behaviour, electrical properties, and photoluminescence spectra.
67)
Interaction of Vacancies with Interstitial Oxygen in Silicon
R.A. Casali , H. Rücker, M. Methfessel
Applied Physics Letters 78(7), 913 (2001)
Based on first-principle total-energy calculations, we show that the majority of vacancies are trapped by interstitial oxygen in silicon wafers with a typical oxygen concentration of about 1018 cm-3. Vacancies and interstitial oxygen form so called A centers with a binding energy of 1.7± 0.4 eV. As a consequence, the density of bound vacancies exceeds the equilibrium density of free vacancies by several orders of magnitude and effective vacancy diffusion coefficients in Si are reduced in comparison to the diffusion coefficient of free vacancies. However, we find that trapping of vacancies alone cannot account for the large discrepancies between previously reported diffusion coefficients for vacancies.
66)
Pseudopotential Study of PrO2 and HfO2 in Fluorite Phase
J. Dabrowski, V. Zavodinsky, A. Fleszar
Microelectronics Reliability 41(7), 1093 (2001)
Praseodymium and hafnium oxides are prospective candidates to substitute SiO2 in decanano MOSFET transistors. We report first ab initio pseudopotential band structure calculations for these materials. We find that fluorite phases of PrO2 and HfO2 have similar electronic structures. The important difference is a narrow sub-band forming the conduction band bottom in PrO2 but absent in HfO2. Electrons in this f-type sub-band have large masses. This explains why ultrathin epitaxial Pr oxide films have low leakage in spite of a relatively small conduction band offset (1 eV) between the oxide and the Si substrate.
65)
Segregation of Phosphorus to Si/SiO2 Interfaces
J. Dabrowski, H.-J. Müssig, R. Baierle, M.J. Caldas, V. Zavodinsky
Materials Science in Semiconductor Processing 3, 85 (2000)
Dopant atoms segregate to SiO2/Si(001) interfaces. This causes problems during manufacture of submicron microelectronic devices. On the basis of ab initio calculations, we identify the physical mechanism by which P atoms are trapped and deactivated at SiO2/Si(001). We argue that segregation can occur to defected as well as to defect-free interfaces. In the latter case, the interfacial stress stabilizes pairs of threefold-coordinated phosphorus atoms. Implications for Complementary Metal-Oxide-Semiconductor (CMOS) process design are discussed.
64)
Band Offsets and Electron Transport Calculation for Strained Si1-x-yGex/Si Heterostructures
P. Dollfus , S. Galdin, H.-J. Osten, P. Hesto
Journal of Materials Science: Materials in Electronics 12, 245 (2001)
The conduction band offset for strained Si1-x-yGexCy layers grown on Si(001) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers provide a conduction band offset Delta EC suitable for electron confinement. At given Delta EC introducing Ge in C-containing alloys allows us to reduce the strain, which should be beneficial to the thermal stability. With a view to n-channel field effect transistor (FET) application on Si substrate, the in-plane electron mobility in tensile ternary layers is calculated using a Monte Carlo transport simulation. The impact of alloy scattering is emphasized.
63)
Investigation of Stress in Shallow Trench Isolation using UV Micro-Raman-Spectroscopy
K.F. Dombrowski, B. Dietrich, I. de Wolf, R. Rooyackers, G. Badenes
Microelectronics Reliability 41, 511 (2001)
We present an investigation of local mechanical stress in shallow trench isolation by UV micro-Raman spectroscopy. UV light (364 nm) penetrates only 15 nm into silicon. In contrast to conventional micro-Raman spectroscopy using visible light only the stress very close to the surface is monitored. In this way, local areas of high stress can be detected, that are not seen with longer wavelength light due to averaging. We demonstrate the advantages of the UV method by an investigation of the influence of different trench oxide densification ambients on the amount of mechanical stress in the silicon substrate, We find, that large mechanical stress up to 800 MPa is introduced at the active area edges during densification in steam ambient. This stress is caused by the formation and growth of a bird's beak, which may lead to defect creation especially in small trenches. This investigation demonstrates the capability to use UV micro-Raman spectroscopy in ULSI technology.
62)
Upper Yield Point of Large Diameter Silicon
A. Fischer, H. Richter, A. Shalynin, P. Krottenthaler, G. Obermeier, U. Lambert, R. Wahlich
Microelectronic Engineering 56, 117 (2001)
The temperature and shear strain rate dependence of the upper yield point of a few kinds of large diameter silicon crystals was studied. Crucial material attributes, such as doping level, initial oxygen content, and the state of oxygen aggregation after thermal treatment, were taken into account. Overall experimental results show that the deformation behavior of the materials studied here is similar; there is no difference observed between high and low boron-doped 200-mm-diameter and 300-mm-diameter silicon crystals. Further, the right choice of sample orientation and shear strain rate used in experiments have been proved to be significant for the characterization of mechanical strength of silicon wafers subjected to process load. Very low strain rates and forces lying in crystallographic (110) directions generate local regions of plastic flow caused by an extremely low yield stress. The results allow the optimization of critical high temperature processes used for materials technology and device fabrication.
61)
Relationship Between Growth Conditions, Thermodynamic Properties and Crystal Structure of SiC
A. Fissel
International Journal of Inorganic Materials 3, 1265 (2001)
The growth of certain SiC polytypes in the molecular beam epitaxy (MBE) was analysed within the framework of classical thermodynamic nucleation theory. It is demonstrated that the formation of certain polytypes in the nucleation stage is due to a complex interplay between their differences in the surface and formation energy as well as the growth condictions. Based on these considerations, the estimations clearly indicate that the formation of the 3C-SiC polytype is preferred at Si-rich conditions or low temperatures, whereas the hexagonal polytypes occur at C-rich condictions or higher temperatures in agreement to experimental findings.
60)
MBE Growth and Properties of SiC Multi-quantum Well Structures
A. Fissel, U. Kaiser, B. Schröter, W. Richter, F. Bechstedt
Applied Surface Science 184, 38 (2001)
Multi-quantum well structures with 3C-SiC wells between alpha-SiC barriers were grown in a two-step procedure by solid-source molecular beam epitaxy. First, one-dimensional wire-like 3C-SiC was nucleated selectively on terraces of the well-prepared off-axis Alpha-SiC(0 0 0 1) substrates at low temperature (T<1500 K). Next, 3C-SiC nuclei and the hexagonal substrate material at higher T and Si-rich conditions. In Comparison to homopolytypic SiC layers, photoluminescence investigations revealed additional signals, which can be explained by optical transitions within the thin cubic well layers.
59)
Raman scattering in strained Si1-xGex layers under hydrostatic pressure
M. Gerling, B. Dietrich
Semiconductor Science and Technology 16(7), 614 (2001)
The Si-Si Raman mode in Si1-xGex layers pseudomorphically strained to Si and in bulk Si1-xGex was investigated as a function of externally applied hydrostatic pressure. The experiments demonstrate that bulk elastic properties can be derived from the pressure-dependent Raman investigations of thin strained hetero-epitaxial layers. Our experimental results are favourably analysed using linear interpolation for the components of elastic stiffness tensor of the Si1-xGex compounds. It was found that the pressure derivative of strained Si1-xGex increases with the Ge concentration. Our analysis suggests that the Gruneisen parameter for strained Si1-xGex is higher than expected from linear interpolation between the Si and the Ge values and that it has slight negative pressure dependence.
58)
Improved Auger Electron Spectroscopy Sputter Depth Profiling of WNx and WSi2 Layers
A. Goryachko, D. Krüger, R. Kurps, G. Weidner, K. Pomplun
Journal of Vacuum Science and Technology A 19(5), 2174 (2001)
We have investigated the effects of sample rotation and ion energy reduction on the quality of ion sputtering assisted Auger electron spectroscopy depth profiling of W/WNx and WSix films on polysilicon substrates. Rotation significantly improves both the depth resolution for W/WNx/Si samples and the senstivity to oxygen inside the W/WNx film. Rotation does not have any effect on results for WSix/Si interfaces. Atomic force microscopy investigations show that the improved resolution for W/WNx/Si samples is due to reduced roughness of the sputtered surface when the sample is rotated. Reduction of the ion energy from 4 to 1 keV also improves the depth profiles of W/WNx films. The ion energy in the same range leads to larger error in measured elemental concentrations for WSix films due to preferential sputtering. This reduction increases the depth resolution of Auger depth profiles in the case of polycrystalline WSix films, but does not change the depth resolution for amorphous WSix films.
57)
A 5.8. GHz Si/SiGe VCO with Amplitude Control for Wireless LAN Applications
G. Grau, U. Langmann, W. Winkler, D. Knoll, K. Pressel
IEICE Transactions on Electronics E84-C (10), 1437 (2001)
We present a 5.8 GHz VCO for the 5 GHz HIPERLAN/2 and U-NII band. The VCO uses a center-tapped inductor and a substrate shield to improve phase noise. Sensitivity to supply voltage and temperature is reduced by an amplitude control block. The design is based on a distributed inductor model which allows optimization without antecedent inductor measurements. The circuit is fabricated in a 0.8 µm 45 GHz fT low-cost SiGe-HBT technology and operates with a supply voltage of -2.0 V to -3.3 V.
56)
Integrated CMOS Wideband Oscillator for RF Applications
F. Herzel, H.B. Erzgräber, P. Weger
Electronics Letters 37(6), 330 (2001)
A fully integrated oscillator with a tuning range of 800 MHz is presented. A combination of capacitive and inductive tuning has been used to produce the large tuning range with a low-gain control input. The phase noise at 1.9 GHz is as low as -120 dBc/Hz at 500 kHz offset. Possible applications include integer-N PLLs with a low level of reference spurs.
55)
Enhancement of Gettering Efficiencies of Different Silicon Substrates During a 0.18 µm LTB CMOS Process Simulation - Stratigraphy by a Novel Chemical Ultra-Trace Depth-Profiling
R. Hoelzl, L. Fabry, K.-J. Range, R. Wahlich, G. Kissinger
Microelectronic Engineering 56, 153 (2001)
We have performed a gettering efficiency (GE) test at different stages in a 0.18 µm LTB CMOS process simulation with maximum temperatures of 1000 0C. Four sorts of wafer substrates (epi, polished) were processed to the point before the step to be studied and then contaminated with 5x1012 atoms/cm2 Cu or Ni with a spin-on technique that was optimized for reproducibility. Afterwards, the wafers were process simulated and analyzed by ICP-MS in combination with a novel chemical depth-profiling procedure. Although none of the wafers showed detectable BMDs by preferential etching and FTIR measurements, BMDs could be found by LST measurements. Epitaxial p/p+ wafers exhibited an outstandingly high GE for Cu at each studied process step due to segregation gettering by the heavily boron doped substrate. Polished wafers showed a lower GE which increased with the process time. Thus, Cu gettering was a function of the size of oxygen precipitates. On the contrary, Ni gettering was not enhanced in epi wafers compared to the polished wafers. Also, no segregation gettering is assumed for Ni, however, a higher initial oxygen concentration led to a higher GE. Thus, Ni gettering is strongly influenced by the oxygen precipitate size, too. A more stable Cu and Ni gettering was found with BMD-densities of 109 cm-3, measured by LST, although preferential etching and FTIR measurements were below the detection limit.
54)
Low Trap Density Nonleaky SiGe Quantum Well MOS Structures : Fabrication and Characteristics
S. Kar, P. Zaumseil
Journal of the Electrochemical Society 148, G535 (2001)
SiGe quantum well metal-oxide-semiconductor (MOS) structures were fabricated by low pressure chemical vapor deposition of the epitaxial layers, or by molecular beam epitaxy (MBE), followed by thermal oxidation of the silicon cap layer at 1100 0C. Examined were the effects of the quantum layer composition, the epitaxy technique, the pre-oxidation surface preparation, the oxidation temperature, and the annealing conditions, on the device quality and the strain relaxation. Addition of Ge to the quantum well was found to increase the interface trap density, due possibly to an increase in the lattice strain, while the addition of C resulted in a reduction of trap density, due possibly to a decrease in the lattice strain as well as passivation of the traps at the Si-SiO2 interface by C. The interface trap density was higher in the case of MBE epi layers, perhaps, due to metal contamination of the samples by the MBE growth chamber. The lowest interface trap densities [2-8 x 1010/cm2V] and the lowest oxide leakage current densities [<10-11 A/cm2 over a range of –2.5 to 1.0 V] were obtained in the case of rapid thermal oxidation at 1100 0C, without any relaxation of the strained SiGe or SiGeC layer.
53)
Electrical Behaviour of Crystal Defects in Silicon Solar Cells
M. Kittler, W. Seifert, O. Krüger
Solid State Phenomena 78-79, 39 (2001)
In this paper we report on the application of beam injection techniques such as EBIC (Electron-Beam-Induced Current), SiPHER Ò (Silicon-Photo-Emhanced Recombination) and Voltage Contrast to characterize crystal defects in multicrystalline Si (mc-Si) for solar cells. Measurements of the EBIC defect contrast vs. Temperature, c(T), were used to assess the recombination properties of individual defects. The analysis of experimental data was based on a recently developed model of Kveder et al.. Examples illustrating the action of hydrogenation and phosphorus gettering on the defect activity will be given. Phosphorus gettering is found capable of reducing the contamination level at dislocations by a factor of about 100. Hydrogenation was observed to passivate defects down to a depth of about 100 µm, for both grain boundaries and intragrain dislocations. For grains exhibiting high defect density, we show that diffusion length vs. temperature data, L(T), can be utilized to assess the mean defect activity and the contamination level of defects. Low-energy EBIC and Voltage Contrast are shown to visualise inhomogenieties of p-n junctions of solar cells. Spikes exceeding the p-n junction depth by about 1/3 were observed along certain grain boundaries and identified as being due to enhanced phosphorus diffusion. Finally, we demonstrate that the SiPHER technique is a promising characterisation method for mc-Si.
52)
Extension of Hydrogen Passivation of Intragrain Defects and Grain Boundaries in Cast Multicrystalline Silicon
O. Krüger, W. Seifert, M. Kittler, O.F. Vyvenko
physica status solidi b 222, 367 (2000)
The recombination activity of crystal defects was studied along cross-sections of cleaved multicrystalline silicon wafers (Silso(R)) grown by block casting. The temperature dependence of the electron-beam-induced current (EBIC) contrast c(T) was analyzed to study defect passivation by remote hydrogen plasma treatment with respect to (i) the extension and (ii) the degree of passivation. Based upon model calculations, the c(T) behavior allows estimating the degree of contamination of recombination active crystal defects. After hydrogen treatment of 1 h at 310 0C the number of defect-related deep levels at grain boundaries is reduced by a factor of three to four. Low-temperature EBIC reveals that hydrogenation also reduces the density of active centers at defects which exhibit already very low or no (detectable) EBIC contrast at room temperature such as intragrain defects. Both defects in intragrain regions and grain boundaries are passivated down to about 100 µm. No indications were found for significantly enhanced hydrogen diffusion along grain boundaries.
51)
Recombination Activity of Contaminated Dislocations in Silicon: A Model Describing the Electron-Beam-Inuduced Current Contrast Behaviour
V. Kveder, M. Kittler, W. Schröter
Physical Review B 63(11), 115208/1-11 (2001)
Existing experimental data give many evidences that the recombination rate of minority charge carriers at dislocations in silicon depends strongly on dislocation decoration by transition metal impurities. Here, we present a model that allows a quantitative description of the recombination of minority carriers at decorated dislocations. It assumes that shallow dislocation bands, induced by the strain field, and deep electronic levels, caused by impurity atoms, which have segregated at the dislocation, or by core defects, can exchange electrons and holes. As a consequence, the recombination of carriers captured at dislocation bands can be drastically enhanced by the presence of even small concentrations of impurity atoms at the dislocation core. The model allows us not only to explain experimentally observed dependences of the recombination rate on temperature and excitation level, but also to estimate the concentration of deep level impurities at dislocations.
50)
Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing
J.P. Liu, P. Zaumseil, E. Bugiel, H.-J. Osten
Applied Physics Letters 79(5), 671 (2001)
We demonstrate the epitaxial growth of hexagonal Pr2O3(001) on Si(111), with X-ray omega -scan full width at half maximum values as low as 0.06 degrees , which is comparable with Si substrates. We find that a phase transition takes place during the anneal of the as-grown films in N2 below the growth temperature. The annealed films display a cubic structure isomorphic to manganese oxide, (111) oriented but 180 degrees rotated about the Si(111) surface normal. The phase transition can be due to nitrogen incorporation.
49)
Can Si(113) wafers be an alternative to Si(001)?
H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert
Microelectronic Engineering 56, 195 (2001)
Si(113) may be a competitive substrate material for Si integrated Circuits. High-quality SiO2/Si(113) films can be produced by standard oxidation techniques. Based on investigations of the initial stages of oxidation by Scanning Tunneling Microscopy and ab initio calculations, we interpret this result as an effect of tensile stress and reduced diffusivity of oxidation by-products on Si(113). Breakdown behavior (field and charge-to-breakdown) of 5 nm thick oxide layers on
Si( 113) is better than on Si(001), at least by a factor 2 for charge to breakdown. To evaluate the technological potential of Si(113), gate-controlled diodes were prepared on Si(113) and Si(001) under conditions optimized for Si(001). Electrical measurements demonstrate no significant differences in the density of rechargeable interface states, threshold voltages, and charge carrier generation and recombination. We believe that optimization of the preparation conditions may lead to extremely reliable thin gate oxides on Si(113).
48)
Formation of Atomically Smooth Ultrathin Oxides on Si(113)
H.-J. Müssig, J. Dabrowski, S. Hinrich
Solid State Electronics 45, 1219 (2001)
We report the first direct observation of dissociative chemisorption of oxygen molecules on a silicon surface at room temperature via a molecular precursor state. We link this to the fact that smooth oxide layers can be grown easily on Si(113). The process of initial oxidation is discussed in terms of surface diffusion paths and surface stress. First ab initio calculations elucidate the favored adsorption sites and the oxidation mechanism. Experimental evidence indicates bond geometries that lead to the quasi-epitaxial growth of an extremely thin SiO2 layer on the substrate at elevated temperatures (600 0C). In contrast to Si(001) oxidation, neither defects nor the ejection of Si atoms plays a significant role during the initial oxidation of Si(113). Gate-controlled diodes prepared on Si(113) and Si(001) 4-in. wafers under optimized conditions for Si(001) show no significant differences in the density of rechargeable interface states, threshold voltages, and charge carrier generation and recombination.
47)
Application of the Phase-Retrieval X-Ray Diffractometry to an Ultra-High Spatial Resolution Mapping of SiGe Films near the Absorption Edge of Ge
A.Y. Nikulin, K. Siu, J.R. Davis, P. Zaumseil, A.Y. Souvorov, A. Freund
physica status solidi (a) 184(1), 145 (2001)
A recently developed new experimental analytical X-ray diffraction method for the direct non-destructive characterization of single-crystal alloys is applied to map the complex structure-factor of SiGe layers with an ultra-high spatial resolution of 5.8 AA. The technique is based on analytical measurements of X-ray phase and amplitude changes in a narrow polychromatic region of synchrotron radiation near the absorption edge of the alloy impurity. These atomic spatial resolution studies have allowed observation and preliminary analysis of surface and interface nanoscale sublayers, where the crystal structure-factor may noticeably differ from the bulk material.
46)
Epitaxial, High-K Dielectrics on Silicon: The Example of Praseodymium Oxide
H.-J. Osten, J.P. Liu, H.-J. Müssig, P. Zaumseil
Microelectronics Reliability 41(7), 991 (2001)
We show the first results for crystalline growth of praseodymium oxide on Si as a potential high-K dielectric with very promising electrical properties. All layer growth experiments were performed using solid source molecular beam epitaxy. The initial growth phase was studied using scanning tunneling microscopy. On Si(001) oriented surfaces, crystalline Pr2O3 grows as (110)-domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(111). These layers can also be overgrown epitaxially with silicon. Finally, we show that the structural quality of epitaxial grown Pr2O3 on Si(001) degrades when the film is exposed to air due to silicon oxide formation at the interface based on oxygen indiffusion. However, it can be stabilized by capping with Si.
45)
Wider Latitude for Sophisticated Devices by Incorporating Carbon into Crystalline Si or SiGe
H.-J. Osten, H. Rücker, J.P. Liu, B. Heinemann
Microelectronic Engineering 56 (1-2), 209 (2001)
Research on highly supersaturated, carbon-containing alloys on silicon substrates started only a few years ago. Meanwhile, knowledge has been accumulated on growth, strain manipulation, thermal stability, carbon effects on band structure and charge carrier transport. We review basic mechanical and electrical material properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001). Adding carbon alleviates some of the constraints for strained
Si1-xGex, and opens new possibilities for device application of heteroepitaxial Si-based systems. The incorporation of carbon is beneficial for: (i) improving SiGe layer properties; (ii) creating layers with new properties; and (iii) controlling dopant diffusion in microelectronic devices. A large variety of applications in microelectronic devices appears likely. The first device application ready for production is the npn-SiGe:C heterojunction bipolar transistor (HBT) with excellent static and high frequency.
44)
Epitaxial Growth of Praseodymium Oxide on Silicon
H.-J. Osten, J.P. Liu, E. Bugiel, H.-J. Müssig, P. Zaumseil
Materials Science and Engineering B87, 297 (2001)
Praseodymium oxide is a potential high-K dielectric with promising electrical properties. Here, we present results for crystalline growth of praseodymium. oxide on Si. On Si(001) surfaces, crystalline Pr2O3 grows as (110) domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(111). These layers can also be overgrown epitaxially with silicon. All layer growth experiments were performed using solid source molecular beam epitaxy. In addition, the initial stages of growth were studied by scanning tunneling microscopy.
43)
Dopant Diffusion Control by Adding Carbon into Si and SiGe: Principles and Device Application
H.-J. Osten, D, Knoll, H. Rücker
Materials Science and Engineering B87, 262 (2001)
The incorporation of low concentrations of carbon (<1010 cm-3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. Carbon also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 µm, epi-free, dual-gate CMOS platform.
42)
Modification of the Si Amorphization Process by In-Situ Ultrasonic Treatments During Ion Implantation
B. Romanyuk, V. Melnik, Ya. Olikh, V. Popov, D. Krüger
Semiconductor Science and Technology 16, 397, (2001)
We report the first study of the effect of in situ ultrasound treatment (UST) during ion implantation on amorphization of crystalline silicon. Rutherford backscattering spectroscopy, ion channelling and cross-section transmission electron microscopy measurements show that amorphization of Si during Ar ion implantation is enhanced by UST, especially at ultrasound frequencies around 2 MHz. The influence on the amorphization process depends mainly on ion flux, ion masses and ultrasound frequency. For implantation conditions without amorphization, for example in the case of implantation with light atoms such as boron, defect concentrations are lower for wafers implanted with UST compared to reference wafers implanted without UST. The influence of ultrasound is discussed in terms of its interaction with point defects and ultrasound-stimulated enhanced diffusion of interstitials.
41)
Non-equilibrium Point Defects and Dopant Diffusion in Carbon-rich Silicon
H. Rücker, B. Heinemann, R. Kurps
Physical Review B 64, 073202 (2001)
We show that B and P exhibit suppressed and As and Sb enhanced diffusion in Si with C atom concentrations of about 1020 cm-3. Since B and P diffuse via an interstitial mechanism an Sb and As diffuse via a vacancy mechanism, this indicates a suppressed density of self-interstitials and an enhanced density of vacancies in C-doped Si. Simultaneous measurements of vancancy supersaturation by means of Sb diffusion and of the clustering kinetics of C are used to study the annihilation of excess vacancies at the Si surface. The surface acts as an effective sink for vacancies with a recombination length l <= 70 nm.
40)
Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Si as Function of Dislocation Contamination
W. Seifert, M. Kittler
Solid State Phenomena 78-79, 253 (2001)
Detailed insight into the recombination behavior of dislocations is important to understand the recombination properties of solar-grade multicrystalline silicon. We demonstrate that measurements of the minority carrier diffusion length as a function of temperature allow to assess the recombination behavior of dislocations in highly dislocated areas, similar to contrast measurements at individual dislocations. Based on model of Kveder et al., the experimental data can be utilized to evaluate the contamination status of the dislocations. The model is also used to study the influence of dislocation contamination on the diffusion length. It is found that a given metal impurity level in the sample is more harmful the higher the dislocation density.
39)
Recombination Current Measurements in the Space Charge Region of MOS Field-Induced PN Junctions
R. Sorge, B. Heinemann
Miroelectronics Reliability, 41(6), 789 (2001)
Electrically active defects in the device region are routinely monitored by CV measurements of reverse-biased field-induced (FI) pn junctions in MOS structures. While useful, this approach is sensitive only to near mid gap defects. Here, we demonstrate a method for interrogation of forward-biased FI pn junctions, which can reveal defect levels over a significantly wider region of the band gap. The method proposed is based on a simultaneous measurement of the gate current and the high frequency gate capacitance in nonequilibrium non-steady state in response to a linear gate voltage ramp which drives the MOS capacitor from inversion equilibrium towards accumulation. This recombination-sensitive technique enables a self-consistent determination of the forward current-voltage characteristic of the FI pn junction. It makes a wider range of important impurities, especially metallic contaminants, accessible to detection by MOS CV approaches. Since the approach satisfies the low-injection condition, the results can be directly related to the properties of the defect centres, thus facilitating defect identification and control.
38)
Depth Profiling of the Recombination Activity of Defects Measured by Temperature-dependent Cross-sectional EBIC
O. Vyvenko, O. Krüger, M. Kittler
Solid State Phenomena 78-79, 65 (2001)
The recombination activity of crystal defects was studied in the temperature range 80 –300 K along cross-sections of cleaved multicrystalline silicon wafers (SilsoÒ ). A decrease of the Electron-Beam-Induced Current (EBIC) contrast from the sample surfaces down to a depth of about 100 µm is found after hydrogen treatment of 1 to 310 0C for both grain boundaries and intragrain dislocations. Depending on the initial activity of the defects, the effect of hydrogen passivation id best visible at intermediate temperatures of 160 – 250 K. The density of deep recombination levels in the vicinity of dislocations and the degree of the passivation are estimated based on recent model calculations of the temperature dependence of the EBIC contrast.
37)
Inline Characterization of SiGe Structures on 8 Inch Si Wafers Using the Bede QC200 X-Ray-Diffractometer
P. Zaumseil, T.A. Lafford, M. Taylor
Journal of Physics D 34(10A), A52 (2001)
Inline characterization of SiGe and SiGe:C heterobipolar transistors places stringent requirements on x-ray diffraction set-ups: (i) precise mounting and positioning of 8 inch wafers for single position scans and area mapping; (ii) high beam intensity in a small spot; and (iii) low background to realize a dynamic range better than five orders of magnitude for precise rocking curve simulation. The Bede QC200 x-ray diffractometer, which applies a novel micro-focus x-ray source and a novel beam conditioning optics to a double-crystal x-ray diffraction system, meets these requirements. Data collected on SiGe structures with the QC200 are compared with data collected at a synchrotron source. We demonstrate that reliable depth profiles of Ge content can be obtained in structures of 500x500 µm2 size in an automatic operation mode at different positions over an 8 inch wafer in a well defined grid. Two automatic fitting programs, one involving a genetic algorithm, are used to extract material information from simulation of the high-resolution diffraction scans. Rapid, reliable convergence on the global minimum gives objective fitting, suitable for quality control in a SiGe technology. Finally, we show how the lateral distribution of Ge content and layer thickness can be mapped over an 8 inch wafer.
36)
Optical Constants and Ellipsometric Thickness Determination of Strained Si1-xGex:C Layers on Si(100) and Related Heterostructures
St. Zollner, J. Hildreth, R. Liu, P. Zaumseil, M. Weidner, B. Tillack
Journal of Applied Physics 88, 4102 (2000)
The complex dielectric functions epsilon ( omega ) from 0.75 to 6.6 eV of pseudomorphically strained Si1-xGex (0<x<0.275) and Si1-x-yGexCy (x approximately=0.21, 0<y<0.013) alloys grown on Si (001) were determined using spectroscopic ellipsometry. Our rotating-analyzer instrument uses a computer-controlled MgF2 Berek waveplate as a compensator to improve the accuracy of the ellipsometric angles, particularly below 3 eV. By performing a least-squares analysis of the raw data, taken at three angles of incidence, we obtain the thicknesses of the alloy and the native oxide cap as well as epsilon ( omega ) for the alloy, which is parametrized using a semiempirical oscillator model. Differences between our data and those in the literature are due to differences in strain conditions and/or the improved accuracy of our instrument employing a compensator, which allows the determination of the native oxide thickness from measurements at long wavelengths. We apply our dielectric functions to analyze a variety of group-IV heterostructures and find good agreement with high-resolution X-ray diffractometry. The optical constants reported here are important, because they allow thickness and composition measurements using automated inline spectroscopic ellipsometers and reflectometers.
35)
A Low-power Asynchronous VLSI FIR Filter
V.A. Bartlett, E. Grass
Proceedings 2001 Conference on Advanced Research in VLSI. ARVLSI 2001 Editor(s): Brunvand, E.; Myers, C. Loas Alamitos, CA, USA: IEEE Comput. Soc, (2001) p.29-39
34)
Exploiting Data-dependencies in Ultra Low-power DSP Circuits
V.A. Bartlett, E. Grass
IEE Seminar Low Power IC Design (Ref. No.01/042).- London, UK: IEE, 2001, p.3/1-6
33)
Accurate Determination of Ge Depth Profile in Si1-xGex/Si Epilayers of Advanced HBT Structures by High Resolution X-ray Diffractometry
G. Bhagavannarayana, S.K. Halder, G. Lippert
Proc. Int. Workshop on Preparation and Characterization of Technologically Important Single Crystals, Febr. 26-28, 2001/ ed. S.K. Gupta. - New Delhi, Nat. Phys. Lab. 2001, p.655
32)
High Performance RF LDMOS Transistors with 5nm Gate Oxide in a 0.25 µm SiGe:C BiCMOS Technology
K.-E. Ehwald, B. Heinemann, H. Rücker, D. Knoll, R. Barth, W. Winkler, B. Hunger, H.E. Wulf, R. Pazirandeh, N. Ilkov
Proc. IEDM 2001, Dec. 2001, p. 895
31)
Cost-Effective High Performance High-Voltage SiGe:C HBTs with 100 GHz fT and BVCEO x fT Products Exceeding 220 VGHz
B. Heinemann, D. Knoll, R. Barth, D. Bolze, K. Blum, J. Drews, K.-E. Ehwald, K. , G.G. Fischer, Köpke, R. Kurps, H. Rücker, P. Schley, W. Winkler, H.-E. Wulf
Proc. IEDM 2001, Dec 01, p. 348
30)
Fabrication of High Quality MOS Structures with SiGe Buried Channels for CMOS Applications
S. Kar, P. Zaumseil
199th ECS Meeting, Electrochemical Society Proceedings PV 2001-2, 178 (2001)
29)
Crystalline Silicon for Solar Cells
M. Kittler, W. Koch
Proc. GADEST 2001, in: Solid State Phenomena Vol. 82-84, 695 (2001)
28)
Electrical Behaviour of Crystal Defects in Si: Influence of a Contamination
M. Kittler, W. Seifert, V. Kveder
Proc. 11th Workshop on Crystalline Solar Cell Materials and Processes, Ed. B.L. Sopori, NREL, Estes Park, Colorado, 2001, p. 32
27)
Investigation of Epitaxy Loading and Geometry Effects in a 8-inch Wafer, SiGe:C BiCMOS Technology
D. Knoll, B. Heinemann, K.-E. Ehwald, D. Wolansky, P. Schley, B. Tillack
Proc. 1st Int. Workshop on SiGe(C) 2001, Jan. 21-23, 2001, Tohoku University, Japan, p. IV-04
26)
Modular, High-Performance BiCMOS by Integration of SiGe:C HBTs
D. Knoll, B. Heinemann, K.-E. Ehwald, H.- Rücker, B. Tillack, H.-J. Osten
Proc. 2nd Int. Symposium on ULSI Process Integration, March 25-30, 2001, Washington D.C., USA, Electrochemical Society Proceedings Vol. 2001-2, p.165
25)
HBT before CMOS, a New Modular SiGe BiCMOS Integration Scheme
D. Knoll, H. Rücker , B. Heinemann, R. Barth, J. Bauer, D. Bolze, K.-E. Ehwald, T. Grabolla, U. Haak, B. Hunger, D. Krüger, R. Kurps, S. Marschmeyer, H.H. Richter, P. Schley, B. Tillack, W. Winkler
Proc. IEDM 2001, Dec. 01, p.499
24)
Success Story
G. Lippert
Homepage of Cadence, 04/01
23)
Optimizing the Cooperation between TCP and Wireless MAC
M. Methfessel, P. Langendörfer, H. Frankenfeldt, I. Babanskaja, I. Matthaei, R. Kraemer
Proc. International Conference on Internet Computing, 26.06.01, Las Vegas/ eds: P. Graham, CSREA Press, 2001
22)
Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)
H.-J. Müssig, J. Dabrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.-J. Osten
Proc. GADEST 2001, in: Solid State Phenomena Vol. 82-84, 783 (2001)
21)
Epitaxial Praseodymium Oxide: A New High-K Dielectric
H.-J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, T. Guminskaya, J.P. Liu, H.J. Müssig, P. Zaumseil
Proceedings of the Interational Workshop on Gate Insulators (IWGI), Tokyo, Nov. 2001, p. 100
20)
Pr2O3 - a New High-K Dielectric (in Japanese)
H.-J. Osten, J.P. Liu, P. Gaworzewski, E. Bugiel, P. Zaumseil
NIKKEI Microdevices 2, p56 (2001)
19)
Technologies for Wireless: A Value-added Approach
A. Ourmazd
Proc. 1st Int. Workshop on SiGe(C) 2001, Jan. 21-23, 2001, Tohoku University, Japan, p. I-01
18)
Plasma Etching in Microelectronics
H.H. Richter, A. Wolff
in : Low Temperature Plasma Physics, Berlin, Wiley-VCH, 2001
Eds.: Hippler, K , S. Pfau, M. Schmidt, R..H. Schoenbach, p. 433
17)
Optimization of ARC Etching in Sub-quarter Micron Technologies
H.H. Richter, H. Silz, R. Barth, S. Dietrich, I. Jürgensen, M. Stegemann, S. Wege
Revue Le Vide: Science, technique et applications, 315 (Mai 2001),
16)
SiGe:C Epitaxy for HBT Applications
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, D. Wolansky, Y. Yamamoto, D. Krüger, P. Schley
Proc. 1st Int. Workshop on SiGe(C) 2001, Jan. 21-23, 2001, Tohoku University, Japan, p. III-01
15)
Temperature-dependent Cross-sectional EBIC Study of Hydrogen Passivation of Defects in mc-Si
O.F. Vyvenko, O. Krüger, M. Kittler
Proc. 11th Workshop on Crystalline Solar Cell Materials and Processes, Ed. B.L. Sopori, NREL, Estes Park, Colorado, 2001, p. 240
14)
Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon
P. Zaumseil, E. Bugiel, J.P. Liu, H.-J. Osten
Proc. GADEST 2001, in: Solid State Phenomena Vol. 82-84, 789 (2001)
Additional Papers Accepted for Publications
13)
Sub-Quarter-Micron Silicon Issues in the 200/300 mm Conversion Era
H. Fußstetter, H. Richter, M. Umeno
E-MRS Symposium Proceedings Vol. 100 (2001)
12)
On The Single-Chip Implementation of a Hiperlan/2 and IEEE 802.11a Capable Modem
E. Grass, K. Tittelbach-Helmrich, U. Jagdhold, A. Troya, G. Lippert, O. Krüger, J. Lehmann, K. Maharatna, K.F. Dombrowski, N. Fiebig, R. Kraemer, P. Mähönen
IEEE Personal Communications Magazine
11)
On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations
T. Hoffmann, K.F. Dombrowski, V. Senez
Proc. Modeling and Simulation of Microsystems Conference, 27.-29.3.2000, San Diego, USA
10)
Elektrische Eigenschaften von Kristalldefekten in multikristallinen Si-Materialien und Solarzellen: Charakterisierung des Einflusses unterschiedlicher Behandlungen durch mikroskopische Techniken
M. Kittler, O. Krüger, W. Seifert
Freiberger Forschungshefte
9)
Room Temperature Luminescence and EBIC Recombination Behaviour of Crystal Defects in Multicrystalline Si
M. Kittler, W. Seifert, T. Arguirov, I. Tarasov, S. Ostapenko
Proc. Solar Energy Materials and Solar Cells
8)
Silicon Solar Cells with Antireflection Diamond-like Carbon and Silicon
Carbide Films
N. Klyui, V.G. Litovchenko, A.G. Roshin, V.N. Dikusha, M. Kittler, W. Seifert
Solar Energy Materials and Solar Cells
7)
Evaluation of Well-Known Protocol Implementation Techniques for Application in Wireless Networks
P. Langendörfer, H. König, R. Kraemer
Journal of Supercomputing (Special Issue)
6)
Can Si(113) wafers be an alternative to Si(001)
H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert
Solid State Electronics
5)
Can Praseodymium Oxide be an Alternative High-K Gate Dielectric?
H.-J. Müssig, H.-J. Osten
Proc. 2001 IRW
4)
High-K Dielectrics: Moving Beyond the Silicon Dioxide Era
H.-J. Osten
Vacuum Solutions
3)
Suppression of Boron Diffusion by Carbon: A New Route to Advanced Heterobipolar Transistors
H. Rücker, H.-J. Osten
Physics of SiGeC, ed. by S.T. Panelides, S. Zöllner, New York : Gordon and Breach
2)
Über Möglichkeiten der Charakterisierung von mc-Si durch SiPHER
W. Seifert, O. Krüger, M. Kittler, V. Higgs
Freiberger Forschungshefte
1)
Defect Diagnostics in mc-Si Using Scanning Techniques
I. Tarasov, S. Ostapenko, W. Seifert, M. Kittler, J.P. Kalejs
Proc. ICDS-21, Giessen, July 2001
Invited Presentations
26)
Towards Quantum Structures in SiC
F. Bechstedt, A. Fissel, U. Grossner, U. Kaiser, H.-C. Weisker, W. Wesch
International Conference on Silicon Carbide and Related Materials Tsukuba, Oct. 28- Nov. 02 2001, Japan
25)
Die Elektronenmikroskopie am IHP zwischen Materialforschung und Fehleranalyse
E. Bugiel
Seminar on AMD, 24.01.01, Dresden, Germany
24)
Elektrische Eigenschaften von Kristalldefekten in Silizium: Kontaminationseinfluss
M. Kittler
Seminar Hahn-Meitner-Institut Berlin, 01.11.01, Germany
23)
Electrical Activity of Crystal Defects in Si (Part 1)
M. Kittler
Colloquium at the State Key Lab of Silicon Materials Research, Zhejiang University, 06.11.01, Hangzhou, China
22)
Electrical Activity of Crystal Defects in Si (Part 2)
M. Kittler
Colloquium at the State Key Lab of Silicon Materials Research, Zhejiang University, 09.11.01, Hangzhou, China
21)
Solarzellen: Strom aus Sonnenlicht
M. Kittler
Hochschulinformationstag der BTU Cottbus, 05.05.01, Cottbus, Germany
20)
Electrical Behaviour of Crystal Defects in Si: Influence of a Contamination
M. Kittler, W. Seifert, V. Kveder
11th Workshop on Crystalline Solar Cell Materials and Processes, Ed. B.L. Sopori, NREL, Estes Park, Colorado, 20.08.2001, USA
19)
Recombination Activity of Individual Crystal Defects in Silicon: Influence of a Contamination
M. Kittler
Nanomaterials Laboratory, National Institute for Materials Science (NML/NIMS), Sengen, Tsukuba, 13.03.01, Japan
18)
Modular, High-Performance BiCMOS by Integration of SiGe:C HBTs
D. Knoll, B. Heinemann, K.-E. Ehwald, H.- Rücker, B. Tillack, H.-J. Osten
199th Electrochemical Society Meeting (2nd Int. Symposium on ULSI Process Integration), March 25-30, 2001, Washington D.C., USA
17)
"Off-Line" Diagnostics for a 0.25 µm SiGe:C BiCMOS Technology
D. Krüger
Institutsseminar - Institut for Solid State and Materials Research Dresden, 20.06.01, Dresden, Germany
16)
Transient Processes and Structural Transformations in Si and SixGe1-x Layers During Oxygen Implantation and Sputtering
D. Krüger, A.A. Efremov, J. Murota, B. Tillack, R. Kurps, G. Ph. Romanova
Talk at Tohoku University, 12,11,01, Sendai, Japan
15)
Integration moderner Hand-Implementierungstechniken in Codegeneratoren
P. Langendörfer
University of Erlangen, June, 2001, Germany
14)
Kann Si(113) eine Alternative zu Si(001) sein?
H.-J. Müssig
Kolloquium des Institutes für Oberflächenmodifizierung Leipzig, 21.06.01, Germany
13)
Can Praseodymium Oxide be an Alternative High-K Gate Dielectric Material for Silicon Integrated Circuits?
H.-J. Müssig, H.-J. Osten
IEEE Integrated Reliability Workshop, Oct.- 15-18, 2001, Stanford
Sierra Camp, Lake Tahoe, CA, USA
12)
Gate-dielektrische Schichten: Ultradünnes SiO2 und alternative Materialien
H.-J. Müssig, J. Dabrowski, H.J. Osten
Kolloquium des Institutes für Kristallographie und Angewandte Mineralogie der Ludwig-Maximilians-Universität München, 23. Nov. 2001, München, Germany
11)
Epitaxial Praseodymium Oxide: A New High-K Dielectric
H.-J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, T. Guminskaya, J.P. Liu, H.J. Müssig, P. Zaumseil
Interational Workshop on Gate Insulators (IWGI), Tokyo, Nov. 2001
10)
Dopant Diffusion Control by Adding Carbon into Si and SiGe: Principles and Device Application
H.-J. Osten, D. Knoll, H. Rücker
2001 Lawrence Symposium Critical Issues in Epitaxy Jan. 2001, Scottsdale, USA
9)
Epitaxial Praseodymium Oxide: A New High-K Dielectric
H.-J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, T. Guminskaya, J.P. Liu, H.J. Müssig, P. Zaumseil
Interational Workshop on Gate Insulators (IWGI), Tokyo, Nov. 2001
8)
Technologies for Wireless: A Value-added Approach
A. Ourmazd, B. Tillack
1st Int. Workshop on SiGe(C) 2001, Jan. 21-23, 2001, Tohoku University, Japan,
7)
Silicon-based Technologies for Wireless
A. Ourmazd
ULSI Process Integration Symposia, 28.03.01, Washington DC, USA
6)
Von der Forschung zur Innovation
A. Ourmazd
Forum der Gesellschaft für Mikroelektronik, 5.4.01, TU Wien, Austria
5)
Business and Technology Trends in communication ICs, plans for the Communicant Fab
A. Ourmazd
Infineon-Workshop Leitungskreis DD200mm, 27.5., Dresden, Germany
4)
Is there Room for Defects in Semiconductors
A. Ourmazd
ICDS-21, Plenarvortrag, 16.07.01, Justus Liebig Universität Giessen, I. Physikalisches Institut, Giessen, Germany
3)
Entwicklungstendenzen der drahtlosen Kommunikation
A. Ourmazd, H. Richter
Innovationsforum Drahtlose Kommunikation, 10.4.01, BIC Frankfurt (O.), Germany
2)
SiGe:C Epitaxy for HBT Applications
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald
Front End Technologies, Semicon European Munich, 24.04.01, Germany
1)
Basic System Simulator for the IEEE 802.11a Standard
A. Troya, G. Lippert
Cadence User Group Meeting, 12.03.01, Munich, Germany
Presentations
52)
Light Diffraction Based Overlay Measurement
J. Bischof, J. Bauer, U. Haak, R. Brunner
SPIE - Microlithography 20001, Febr. 26- March 02, 2001, Santa Clara, California, USA
51)
Innovatives Prinzip zur Overlaymessung in der Fotolithographie
J. Bischoff J, R. Brunner, J. Bauer, U. Haak
102. Jahrestagung der Deutschen Gesellschaft für angewandte Optik, 06.-09.06.2001, Göttingen, Germany
50)
Charakterisierung von lateralen Nanometerstrukturen mit optischen und nichtoptischen Messverfahren
J. Bischoff, R. Brunner, S. Gliech, A. Duparré, J. Bauer
102. Jahrestagung der Deutschen Gesellschaft für angewandte Optik, 06.-09.06.2001, Göttingen, Germany
49)
TEM Investigations of Crystalline Praseodymium Oxide on Silicon
E. Bugiel, J.P. Liu, H.-J. Osten
Advances in Focused Ion Beam Microscopy, March, 30th, 2001, Oxford, UK
48)
TEM Investigations of Epitaxial Praseodymium Oxide on Silicon
E. Bugiel, J.P. Liu, H.-J. Osten
12th Int. Conference on Microscopy of Semiconducting Materials, 25.-29.03.2001, Oxford, UK
47)
Reactive Ion Etching Characteristics of Cobalt Silicide and Tungsten Silicide in Fluorine-based and Argon Plasmas
S. Chernjavsky., A. Goryachko, D. Krüger, H.H. Richter
15th International Conference on Ion-Surface Interactions (ISI-2001), Aug.-27-31, 2001, Zvenigorod, Russia
46)
Segregation of Phosphorus to Si/O2/Si(001) Interfaces
J. Dabrowski, V. Zavodinsky, H.-J. Müssig, K. Ignatovich
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, March 26-30, 2001, Hamburg, Germany
45)
Atomic Structure of HfO2(110)/Si(001) Interfaces
J. Dabrowski, V. Zavodinsky, H.-J. Müssig, K. Ignatovich
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, March 26-30, 2001 Hamburg, Germany
44)
Chemical Composition of HfO2/Si(001) Interfaces
J. Dabrowski, V. Zavodinsky, H.-J. Müssig, K. Ignatovich
ICDS-21, July 16-20, 2001, Giessen, Germany
43)
Segregation of Phosphorus to SiO2/Si(001) Interfaces
J. Dabrowski, V. Zavodinsky, H.-J. Müssig, K. Ignatovich, R. Baierle, M.J. Caldas
ICDS-21, July 16-20, 2001 Giessen, Germany
42)
Vertical Optimization of Data Transmission for Energy Aware Mobile Devices
K.F. Dombrowski, M. Methfessel, P. Langendörfer, H. Frankenfeldt, I. Babanskaja, I. Matthaei, R. Kraemer
International Conference on Wireless LANs, PANs and Home Networks, 5.-7.12.01, Singapore
41)
High Performance RF LDMOS Transistors with 5nm Gate Oxide in a 0.25 µm SiGe:C BiCMOS Technology
K.-E. Ehwald, B. Heinemann, H. Rücker, D. Knoll, R. Barth, W. Winkler, B. Hunger, H.E. Wulf, R. Pazirandeh, N. Ilkov
IEDM 2001, Dec. 2001
40)
Anwendungsmöglichkeiten der XPS zur Untersuchung des MBE-Wachstums von Schichten am Beispiel des Praseodymoxid
A. Fissel, J. Dabrowski, P. Zaumseil, H.-J. Osten
Deutscher MBE-Workshop, Zeuthen, Sept. 2001, Germany
39)
Preparation of SiC Nanorod Structures Containing Si Nanocrystals
A. Fissel, U. Kaiser, H. Hobert
International Conference on Silicon Carbide and Related Materials, Oct. 28 - Nov. 02, 2001, Tsukuba, Japan
38)
AES and XPS Study of Thermally Activated Inter-diffusion in High-K Dielectric Pr2O3 Deposited on Si
A. Goryachko , J.P. Liu, D. Krüger, H.-J. Osten, E.- Bugiel, R. Kurps
Frühjahrstagung der DPG, 26.-30.03.2001 Hamburg, Germany
37)
Thermally Activated Interdiffusion in High-K Dielectric Pr2O3 Deposited on Si(001)
A. Goryachko, V.P. Melnik, D. Krüger, H.-J. Osten, E. Bugiel, P. Zaumseil, R. Kurps
Autumn School on Advanced Materials Science and Electron Microscopy, 26.09.-01.10.01, Halle, Germany
36)
Investigations of Stress-Induced Leakage Current in Ultrathin Silicon Oxides
T. Guminskaya , P. Gaworzewski
Frühjahrstagung der DPG 2001, March 26-30 Hamburg, Germany
35)
Diffusion and Electrical Activity of Copper on p-Si1-x-yGexCy Alloys
A. Hattab, M.O. Aboelfotoh, G. TRemblay, F. Meyer, J. Kolodzey, H.-J. Osten C. Dubois
Materials for Advanced Metallization, March 2001, Sweden
34)
Cost-Effective High Performance High-Voltage SiGe:C HBTs with 100 GHz fT and BVCEO x fT Products Exceeding 220 VGHz
B. Heinemann, D. Knoll, R. Barth, D. Bolze, K. Blum, J. Drews, K.-E. Ehwald, G.G. Fischer, K. Köpke, R. Kurps, H. Rücker, P. Schley, W. Winkler, H.-E. Wulf
IEDM 2001, Dec 01
33)
Recombination Activity of Dislocations in Si
M. Kittler
ACCGE-13, Burlington, Vermont, August 2001, USA
32)
Rekombinationsstärke von Kristalldefekten in Si
M. Kittler
KoSi-Treffen, 27.04.01, Göttingen, Germany
31)
Crystalline Silicon for Solar Cells
M. Kittler, W. Koch
GADEST 2001, Sept.-30-Oct.-04, 2001, Catania, Italy
30)
Room Temperature Luminescence and EBIC Recombination Behaviour of Crystal Defects in Multicrystalline Si
M. Kittler, W. Seifert, T. Arguirov, I. Tarasov, S. Ostapenko
E-MRS Spring Meeting 2001, Symposium E, June 2001, Strasbourg, France
29)
Investigation of Epitaxy Loading and Geometry Effects in a 8-inch Wafer, SiGe:C BiCMOS Technology
D. Knoll, B. Heinemann, K.-E. Ehwald, D. Wolansky, P. Schley, B. Tillack
1st Int. Workshop on SiGe(C) 2001, Jan. 21-23, 2001, Tohoku University, Japan,
28)
HBT before CMOS, a New Modular SiGe BiCMOS Integration Scheme
D. Knoll, H. Rücker , B. Heinemann, R. Barth, J. Bauer, D. Bolze, K.-E. Ehwald, T. Grabolla, U. Haak, B. Hunger, D. Krüger, R. Kurps, S. Marschmeyer, H.H. Richter, P. Schley, B. Tillack, W. Winkler
IEDM 2001, Dec. 01
27)
Influence of Experimental Parameters on Raman-Spectroscopy of Silicon Surfaces
S. Kouteva-Arguirova, T. Arguirov, M. Kittler, W. Seifert, J. Reif, D. Wolfframm
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, March 26-30, 2001, Hamburg, Germany
26)
Influence of In-situ Ultrasound Treatment During Ion Implantation on Amorphization and Junction Formation in Silicon
D. Krüger, R. Romanjuk, V. Melnik, Y. Olikh, R. Kurps
Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (USJ'2001), April 22-26, 2001, Napa, California, USA
25)
Transient Processes and Structural Transformations in Si and SixGe1-x Layers During Oxygen Implantation and Sputtering
D. Krüger, A.A. Efremov, J. Murota, B. Tillack, R. Kurps, G. Ph. Romanova
SIMS XIII, Nov, 11-15, Nara, Japan
24)
Characterization of Chemical Vapor Deposited TiN Multilayer Structures for Advanced CMOS Technologies
V.P. Melnik, A. Goryachko, H. Schneider, D. Wolansky, E. Bugiel, D. Krüger
Autumn School on Advanced Materials Science and Electron Microscopy, 26.09.-01.10.01, Halle, Germany
23)
Optimizing the Cooperation between TCP and Wireless MAC
M. Methfessel, P. Langendörfer, H. Frankenfeldt, I. Babanskaja, I. Matthaei, R. Kraemer
International Conference on Internet Computing, 26.06.01, Las Vegas, USA
22)
Depth Profiling Using Synchrotron Radiation With High Energetic Resolution as Demonstrated for Si-, SiC-, SiGe-, and SiGeC-Samples
R.P. Mikalo, P. Hoffmann, D. Batchelor, D. Schmeißer, A. Lloyd-Spetz, I. Lundström, H. Wawra, K. Pressel
DPG Spring Meeting, Poster, 26.03-30.03.2001, Hamburg, Germany
21)
Initial Stages of Praseodymium Oxide Film Formation on Si(001)
H.-J. Müssig, J. Dabrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.-J. Osten
11th Int. Conf. on Scanning Tunneling Microscopy / Spectroscopy and Related Techniques, University of British Columbia, Vancouver, July 15-20, 2001, Canada
20)
Initial Stages of Praseodymiumoxide Deposition on Si(001)
H.-J. Müssig, K. Ignatovich
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG,
March 26-30, 2001, Hamburg, Germany
19)
Structure and Stability of Thin Praseodymium Oxide Layers on Si(001)
H.-J. Müssig, J. Dabrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.-J. Osten
GADEST 2001, 30.09.-04.10.01, Catania, Italy
18)
Anfangsphasen der Praseodymiumoxid-Abscheidung auf Si(001)
H.-J. Müssig, J. Dabrowski, K. Ignatovich, J.P. Liu, V. Zavodinsky, H.-J. Osten
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG, March 26-30, 2001, Hamburg, Germany
17)
Boron-Stabilized c(4x8) Structure of Clean Si(001)
H.-J. Müssig, K. Ignatovich, V. Zavodinsky, J. Dabrowski
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG,
March 26-30, 2001, Hamburg, Germany
16)
MBE Growth of Crystalline Praseodymium Oxide on Silicon
H.-J. Osten, J.P. Liu, E. Bugiel, A. Fissel, H.-J. Müssig, P. Zaumseil
Deutscher MBE-Workshop, Zeuthen, Sept. 2001, Germany
15)
Epitaxial, High-K Dielectrics on Silicon: The Example of Praseodymium Oxide
H.-J. Osten, J.P. Liu, E. Bugiel, H.-J. Müssig, P. Zaumseil
2001 Lawrence Symposium ""Critical Issues in Epitaxy Jan. 2001, Scottsdale, USA
14)
Plasma Etching of Organic ARC for Quarter-micron Si Technologies
H.H. Richter, H. Silz, A. Wolff, I. Jürgensen, M. Stegemann, S. Wege
10. Bundesdeutsche Fachtagung Plasmatechnologie, 28.02.-02.03.2001 Greifswald, Germany
13)
Comparison of Room Temperature Photoluminescence and EBIC
W. Seifert, M. Kittler
KoSi-Arbeitstreffen 23-26. 01. 2001, Zellingen-Retzbach, Germany
12)
Modellierung der Diffusionslänge als Funktion der Versetzungskontamination
W. Seifert, M. Kittler
KoSi-Arbeitstreffen 23-26. 01. 2001, Zellingen-Retzbach, Germany
11)
Rekombinationsaktivität von Versetzungen in TriSi
W. Seifert, M. Kittler
KoSi-Arbeitstreffen 18.-21. 09. 2001, Eisenach, Germany
10)
DLTS-Untersuchungen an mc-Si
W. Seifert, M. Kittler
KoSi-Arbeitstreffen 18.-21. 09. 2001, Eisenach, Germany
9)
Optimization of ARC Etching in Sub-quarter Micron Technologies
H. Silz, H.H. Richter, R. Barth, S. Dietrich, I. Jürgensen, M. Stegemann, S. Wege
13th International Colloquium on Plasma Processes, June 10-14, 2001, Antibes, France,
8)
Digital Design Flow: A Case Study
Z. Stamenkovic, U. Jagdhold
Conference for Electronics, Telecommunications, Computers, Automation and Nuclear Engineering, June 04-07, 2001, Arandjelovac, Yugoslavia
7)
SiGe:C Epitaxy for HBT Applications
B. Tillack, D. Knoll, B. Heinemann, K.-E. Ehwald, D. Wolansky, Y. Yamamoto, D. Krüger, P. Schley
1st International Workshop on SiGe(C) 2001, Jan. 21-23, 2001, Tohoku University, Japan
6)
On the Performance of a Decision-Directed Channel Estimator for OFDM
A. Troya
6th International OFDM Workshop, Sept.-18-19, 2001
5)
Fully Implemented IEEE 802.11a / Hiperlan2 Model Including Synchronization
A. Troya , G. Lippert
IEEE Int. Conference on 3rd Generation Wireless and Beyond, June 06-08, 2001 , San Francisco, USA
4)
Characterization of Crystalline-Amorphous Transition by Heavy C Doping of Poly Si (Si:C)
Y. Yamamoto , O. Fursenko, K. Köpke, J. Bauer, E. Bugiel, D. Krüger, P. Zaumseil, B. Tillack
E-MRS Spring Meeting 2001 E, June 5-8, 2001, Strasbourg, France
3)
Structural Investigations of Praseodymium Oxide Epitaxially Grown on Silicon
P. Zaumseil, E. Bugiel, J.P. Liu, H.-J. Osten
GADEST 2001, 30.09-04.10.01, Catania, Italia
2)
Ab Initio Band Structures of HfO2 and PrO2
V. Zavodinsky, J. Dabrowski, H.-J. Müssig, K. Ignatovich, A. Fleszar
65. Physikertagung und Frühjahrstagung des Arbeitskreises Festkörperphysik der DPG,
March 26-30, 2001, Hamburg, Germany
1)
The Effects of Proton Irradiation on SiGe:C HBTs
S. Zhang, G. Niu, J.D. Cressler, H.-J. Osten, D. Knoll, C. Marshall, P.
Marshall, H. Kim, R. Reed
2001 IEEE Nuclear and Space Radiation Effects Conference
Technical Reports
7)
Abschlussbericht zum Projekt Defekte in SiGe
K.W. Benz, K. Pressel
Report - Kristallographisches Institut Freiburg, IHP Frankfurt (O.), unterstützt von der DFG
6)
Finite-Element-Analyse des Verspannungszustandes des Siliziumsubstrates durch Grabenisolationsstrukturen und Regeln zur Minimierung der Verspannung
A. Fischer
Abschlussbericht zum Projekt Material-technologischer Support von fortgeschrittenen Si CMOS Technologiemodulen des IHP
5)
Bewertung des mechanischen Spannungseinflusses auf die CMOS-Ladungsträgerbeweglichkeiten der IHP-Si-Technologien (0.25Mm - CDR3 und 0.18Mm - Intel)
A. Fischer
Report zum Projekt: Reduction of Mechanical Stress in the IHP BiCMOS Process
4)
Strukturelle und elektrische Charakterisierung alternativer Gateoxide auf Siliziumoberflächen
H.-J. Müssig
Fortsetzungsantrag zum DFG-Projekt
3)
Entwicklung neuer Isolatorprozesse für die 0,14 µm-Strukturierung auf Infineon-kompatiblen Anlagen ("Isolatorätzprozesse II")
H.H. Richter, H. Silz, St. Marschmeyer, S. Günther, D. Krüger
Dienstleistungsvertrag Nr. D 011 013 vom 27.12.1999 zwischen Infineon Dresden und IHP
2)
Abschlussbericht zu dem von der VW-Stiftung geförderten Projekt im Schwerpunkt 'Mikrocharakterisierung von Werkstoffen und Bauelementen'
P. Schwander, P. Formanek, M. Kittler (edititorial responsibility)
1)
An SDL Model for a Wireless Local Area Network, Complying to the Standard IEEE 802.11
K. Tittelbach-Helmrich, O. Krüger, J. Lehmann
IHP Technical Report
Books / Proceedings / Dissertations
3)
ChiPPS 2000 : Selected Papers of the Second International Workshop on Challenges in Predictive Process Simulation
J. Dabrowski
Computational Materials Science Vol. 21 No. 4 (2001)
2)
Gettering and Defect Engineering in Semiconductor Technology - GADEST 2001
V. Raineri, F. Priolo, M. Kittler, H. Richter Eds.
Scitec Publ. 2001
1)
Proceedings of Symposium E Crystalline Silicon for Solar Cells held at E-MRS Spring Meeting 2001, June 2001 in Strasbourg, France
M. Kittler, S. Martinuzzi, W. Koch, T. Bruton
in print
Patents
21)
System und Verfahren zur Standortbestimmung
B. Dietrich, R. Kraemer
DE-Patentanmeldung IHP.207.01 / IB 1057 , Anm-AZ: 101 59 226.4
20)
Verfahren zum Abbrechen des Empfangs von IEEE 802.11 Paketen
K.F. Dombrowski
DE-Patentanmeldung am: , IHP.217.01 / IB 1166 , Anm-AZ: 101 60 510.2
19)
CMOS kompatibler lateraler DMOS Transistor
K.-E. Ehwald
int. Patentanmeldung IHP.193.PCT, Anm.-AZ:PCT/DE00/01175, am 24.03.01
18)
LDMOS Transistor
K.-E. Ehwald, Heinemann
DE-Patentanmeldung IHP.209.01 / IB 1065, Anm.-AZ: am 17.08.01
17)
Verfahren und Vorrichtungssystem zur Datenübertragung
E. Grass, H. Frankenfeldt
int. Patentanmeldung IHP.206.PCT / IB1055, Anm.-AZ: PCT/EP01/08068, am 12.07.01
16)
Bipolartransistor mit epitaxialer Basis
B. Heinemann, D. Knoll, K.-E. Ehwald
DE-Patentanmeldung IHP224.01/ IB 1179, Anm-AZ: 101 60 509.9
15)
Schichten in Substratscheiben
B. Heinemann, K.-E. Ehwald, D. Knoll, B. Tillack
internationale Patentanmeldung IHP.186.PCT, Anm-AZ: PCT/EP01/14318
14)
Bipolarer Transistor
B. Heinemann Knoll Ehwald, D. Krüger B. Tillack, Osten Mehr W. Winkler , Ourmazd Rücker
DE-Patentanmeldung IHP.205.01 / IB 1054, Anm-AZ: 101 60 511.0
13)
Frequenzsynthesizer und FM-Demodulator mit definierter Oszillatorsteuerspannung
F. Herzel
DE-Patentanmeldung IHP.202.01/ IB1048, Anm.-AZ: 101 32 128.7-35, am 28.06.01
12)
Verfahren zur Herstellung von schnellen vertikalen npn-Bipolartransistoren und komplementären MOS-Transistoren auf einem Chip
D. Knoll, B. Heinemann
internationale Patentanmeldung IHP.190.PCT/IB 1183, Anm.-AZ: PCT/EP01/14319
11)
MOS Transistor mit Praseodym-Silicid-Kontakten und Verfahren zu seiner Herstellung in CMOS- und Bi-CMOS-Technologien
D. Krüger , A. Goryachko, R. Kurps, L. P. Liu, H. J. Osten
DE-Patentanmeldung IHP.201.01/ IB1035, Anm.-AZ: 101 27 234.0, am 26.05.01
10)
Referenzprobe zur verbesserten quantitativen Bestimmung von Oberflächenkontaminationen auf Halbleiterwerkstoffen, insbesondere Silziumwafern, nach verschiedenen Prozeßschritten der Bauelementefertigung
D. Krüger, V. Melnik, R. Kurps, B. Romanjuk
DE-Patentanmeldung IHP.213.01, IB 1161, Anm-AZ: 101 55 020.0
9)
Vermeidung der Wechselwirkung - analog- digital auf Single Chip
G. Lippert, N. Fiebig
DE-Patentanmeldung, IHP.221.01 / IB1165, Anm-AZ:
8)
Verfahren und Schaltungsanordnung zur Durchführung einer Fast Fourier Transformation sowie Anwendung derselben
K. Maharatna, E. Grass, U. Jagdhold
internationale Patentanmeldung, IHP.189.PCT / IB 1184, Anm.-AZ: PCT/EP01/14536
7)
CORDIC Prozessor
K. Maharatna , E. Grass, S. Banerjee, A. Dhar
DE-Patentanmeldung IHP.222.01 / IB 1172, Anm-AZ:
6)
Kommunikationssystem zur Übertragung von Daten und Verfahren zur Nutzung eines derartigen Verfahrens
M. Methfessel, H. Frankenfeldt, I. Matthaei, R. Kraemer
int. Patentanmeldung IHP.214.PCT, IB1162, Anm-AZ: PCT/EP01/10232
5)
Elektronisches Bauelement und Herstellungsverfahren für ein elektronisches Bauelement (Praseodymium)
H.-J. Osten, K.-E. Ehwald
int. Patentanmeldung IHP.203.PCT, IB1063, Anm.-AZ: PCT/EP01/08830, am 31.07.01
4)
Statischer Frequenzteiler mit umschaltbarem Teilerverhältnis
M. Pierschel, Gustat
US-Patentanmeldung IHP.204.US /IB 1042, Anm.AZ: US 09/805,488, am 13.03.01
3)
Verfahren und Vorrichtung zum Herstellen dünner epitaktischer Halbleiterschichten
B. Tillack, G. Ritter D. Wolansky, T. Grabolla
DE-Patentanmeldung IHP.208.01 / IB1061, Anm.-AZ: 101 37 441.0, am 29.07.01
2)
Hochfrequenz MOS
W. Winkler
DE-Patentanmeldung IHP.192.01 / IB 1156, Anm.AZ: 101 35 803.2, am 23.07.01
1)
Bauelement zum Schutz vor hohen Spannungen in elektronischen Schaltungen
W. Winkler
DE-Patentanmeldung IHP.223.01 / IB 1177, Anm-AZ:
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