Publications 2000
Published Papers | Accepted Papers | Invited Presentations | Presentations | Reports | Books | Patents
Published Papers
78)
Oxidation of Si1-x-yGexCy Strained Layers Grown on Si: Kinetics and Interface Properties
A. Cuadras, B. Garrido, C. Bonafos, J.R. Morante, L. Fonseca, K. Pressel
Microelectronics Reliability 40(4-5), 829 (2000)
We have investigated the thermal oxidation of strained Si1-xGex and Si1-x-yGexCy layers and the influence of the thermal process on the structure of the layers. Using XPS and SIMS depth profiles, we have found a germanium pile-up in the epitaxial layer near the oxide-layer interface.Using transmission electron microscopy (TEM), we have observed that crystalli
nity is well conserved, but additionally, we have found SiC precipitates. A qualitative model for the oxidation of this kind of binary and ternary alloy is presented. The model is based on the strain development of the samples and depends on germanium and carbon compositions and on the temperature of the process.
77)
Optical Characterization of Thermally Oxidized Si1-x-yGexCy Layers
A. Cuadras, B. Garrido, C. Bonafos, J.R. Morante, L. Fonseca, M. Franz, K. Pressel
Thin Solid Films 364, 233 (2000)
The oxidation kinetics and the optical properties of the new SiO2/Si1-x-yGexCy system (grown epitaxially on Si) have been studied in detail by ellipsometry (EL) and infrared spectroscopy (FTIR). While EL is straightforwardly applied to silicon, the thermal oxidation process affects the structure and refractive index of the underlying non-oxidized Si1-x-yGexCy. Thus, to determine the oxidation kinetics, part of the oxide must be etched-away to monitor the variation of the refractive index of the Si1-x-yGexCy layer after oxidation. The EL data has been interpreted as having a Ge-rich superficial layer and b -SiC precipitates embedded in a SiGeC matrix. This model have allowed us to correlate the EL results with the characterization performed by SIMS and TEM (Ge pile-up at the interface with the oxide and b -SiC nanoprecipitates in the bulk of the semiconductor). These changes are driven by rejection of Ge from the oxidation front and carbon leaving its substitutional site (Cs). The inverse evolution of the Cs and b -SiC content has been quantified by monitoring their IR bands at 607 and 820 cm-1, respectively. Accurate results on dry thermal oxidation kinetics of Si1-x-yGexCy in the thin oxide regime are presented.
76)
Point Defect Assisted Diffusion in Semiconductors
J. Dabrowski
Diffusion and Defect Data B (Solid State Phenomena) 71, 23 (2000)
Diffusion assisted by point defects strongly affects many solid state processes. We review the major mechanisms by which lattice atoms diffuse: migration mediated by lattice vacancies and by self-interstitials. We illustrate the discussion by examples from systems of practical importance, focusing on atomistic and phenomenological features. In particular, we consider Si diffusion in GaAs (vacancy-mediated) and B diffusion in Si (interstitial-mediated).
75)
Mechanism of Dopant Segregation to SiO2/Si(001) Interfaces
J. Dabrowski, H.-J. Müssig, R. Baierle, M.J. Cladas, V. Zavodinsky
Journal of Vacuum Science B 18(4), 2160 (2000)
Dopant atoms segregate to SiO2/Si(001) interfaces and are deactivated there. This can cause problems in fabrication of submicron microelectronic devices. On the basis of ab initio calculations, we propose a mechanism for donor segregation and deactivation. We argue that donor species (P and As) are trapped as threefold-coordinated atoms at interface defect sites (dangling bonds and Si vacancies) and, most significantly, in form of dopant pairs at defect-free interfaces. This pairing will dominate when dopant concentration exceeds approximately 1019 cm-3.
74)
Slip-Free Processing of 300 mm Silicon Batch Wafers
A. Fischer, H. Richter, W. Kürner, P. Kücher
Journal of Applied Physics 87(3), 1543 (2000)
Under gravitational and thermal constraints of integrated-circuit (IC) process technology, 300-mm-diam silicon wafers can deform via slip dislocation generation and propagation, degrading the electrical characteristics of the leading edge device. We present a force balance model to describe the strain relaxation in large wafer diameter, which includes heat transfer effects and the upper yield point of the silicon material. The material attributes, such as oxygen content and the state of oxygen aggregation, are taken into account. The theoretical approach allows the calculation of wafer mechanics and ramp rate profiles for an arbitrary high-temperature process. Plastic deformation of silicon wafers caused by thermal stresses at high temperatures can be controlled by process design. Deformation due to gravitational forces can be prevented through appropriate equipment design. The quantitative theory proposed here provides guidance for computer simulation to configure stable slip-free wafer process flow under mechanical and thermal loads. Applications include high speed simulation of "what if?" experiments, and initial simulations of large scale experimental sequences. The simulator developed can also be used by IC manufacturers to determine optimum wafer throughput and cycle times in front-end device processes.
73)
An Equilibrium Model for Buried SiGe Strained Layers
A. Fischer, H.-J. Osten, H. Richter
Solid State Electronics 44, 869 (2000)
The more refined model proposed here and its experimental verification provides a consistent picture of the complex mechanism for strain relief and defect propagation in Si/SiGe/Si heteroepitaxial stacks used in HBT technology. We have identified and quantified the relevant phenomena to predict the coherency and relaxation behavior of more complicated heteroepitaxial structures and can precisely predict the equilibrium critical thickness for a defect-free Si capped SiGe epilayer on Si substrate. The results allow us to optimize the device design for high x strained layer configurations and to determine the latitude in process margin.
72)
Out-diffusion and Precipitation of Copper in Silicon: An Electrostatical
Effect
C. Flink C, H. Feick, S.A. McHugo, W. Seifert, H. Hieslmair, T. Heiser, A.A.
Istratov, E.R. Weber
Physical Review Letters 85, 4900 (2000)
Concentrations of mobile interstitial copper and precipitated copper in silicon were studied after a high temperature intentional contamination and quench to room temperature. It was found that below a critical contamination the copper predominantly diffuses out to the surface, while for higher initial copper concentrations it mainly precipitates in the bulk. The critical copper contamination equals the acceptor concentration plus 1016 cm–3. This behavior can be explained by the electrostatic interaction between the positively charged interstitial copper and the forming copper precipitates.
71)
Band Offset Predictions for Strained Group IV Alloys: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)
S. Galdin, P. Dollfus, V. Aubry-Fortuna, P. Hesto, H.-J. Osten
Semiconductor Science Technology 15, 565 (2000)
The band offsets for strained Si1-x-yGexCy layers grown on Si(001) substrate and for strained Si1-xGex layers grown on fully relaxed Si1-zGez virtual substrates are estimated. The hydrostatic strain, the uniaxial strain and the intrinsic chemical effect of Gex and C are considered separately. Unknown material parameters relative to the latter effect are chosen to give the best agreement with the available experimental results for Si1-xGex and Si1-yCy layers on Si. As a general trend concerning carrier confinement opportunities, it is found that a compressive strain is required to obtain a sizeable valence band offset, while a tensile strain is needed to obtain a conduction band discontinuity. In most cases the strain is responsible for a bandgap narrowing with respect to that of the substrate. The obtained results are in very good agreement with available experimental determinations of band offsets and bandgap changes for ternary alloys on Si(001).
70)
A Current-Folded Up-Conversion Mixer and a VCO with Center-Tapped Inductor in a SiGe-HBT Technology for 5 GHz Wireless LAN Applications
G. Grau, U. Langmann, W. Winkler, D. Knoll, H.-J. Osten, K. Pressel
IEEE Journal of Solid State Circuits 35(9), 1345 (2000)
This paper describes a 5.8-GHz up-conversion mixer core based on a current-folded architecture and a 5-GHz differential emitter-coupled voltage-controlled oscillator (VCO) utilizing a center-tapped inductor and a substrate shield. Both circuits are fabricated in a 0.8- µm 45-GHz fT SiGe heterojunction bipolar transistor (HBT) technology. The supply voltage range is between -2.3 V and -3.3 V to meet the requirements of mobile circuits. Special care has been taken with the inductor model. A distributed modeling approach was used to generate an inductor model from a geometrical description. This type of model also has the advantage that it can simulate RF effects in both time and frequency domain.
69)
Comparative Analysis of Minority Carrier Transport in npn Bipolar Transistors with Si, Si1-xGex, and Si1-yCy Base Layers
B. Heinemann, D. Knoll, G.G. Fischer, P. Schley, H.-J. Osten
Thin Solid Films 369(1-2), 347 (2000)
Here we present a comparative analysis of vertical minority carrier transport in Si, Si0.925Ge0.075, Si0.998C0.002, and Si0.99C0.01 base layers of bipolar transistors. We show that a conventional transit time analysis for extracting the minority carrier mobilities fails for doping profiles containing a low doped emitter region. The contribution of locally compensated charge storage, called neutral charge storage, in the emitter-base depletion region must not be neglected. To overcome drawbacks of the simple transit time analysis, we use 2D device simulations to obtain an improved understanding of the measured high-frequency parameters. Taking into account the real doping profiles and device structures, and using a calibrated parameter set for strained SiGe, the simulation results for the Si, Si1-xGex, and Si1-yCy (y£ 0.2%) base layer transistors reproduce very well the measured transit times (assuming the Si data for the electron mobility µ n) in the heteroepitaxial base layers. In the case of higher carbon concentration (y=1%), the electron mobility is reduced by a factor of two.
68)
Phase Noise in a Differential CMOS Voltage-Controlled Oscillator for RF Applications
F. Herzel, M. Pierschel, M. Tiebout, P. Weger
IEEE Transactions on Circuits and Systems II, 47(1), 11 (2000)
This paper presents theoretical and experimental results on phase noise of differential CMOS oscillators. A simple analytical expression is derived and verified by simulation which relates the phase noise including the device excess noise factor to circuit parameters. In agreement with the theoretical results, an experimental 1.9-GHz oscillator yielded phase noise as low as -100 dBc/Hz at 100-kHz offset at a power consumption of 12 mW. A wide tuning range of 250 MHz was obtained by using PMOSFET's as varicap with only slight degradation of the phase-noise performance due to the varicap.
67)
Life Cycle of Grown-In Defects in Silicon as Observed by IR-LST
G. Kissinger, J. Vanhellemont
Journal of Crystal Growth 210(1-3), 7 (2000)
We review defect studies in as-grown and processed silicon wafers performed by the authors. These have resulted in improved understanding of substrate-related defect formation, from nucleation during the pulling process through to evolution during subsequent device processing. We summarize our results on the impact of crystal pulling conditions on grown-in oxide precipitate nuclei size/density distributions, and on the transformation of D-defects into oxide particles during high-temperature anneals. Finally, the effects of vacancy and oxygen outdiffusion on denuded zone formation and on the grown-in precipitate nuclei in the near-surface region of silicon wafers are compared. On several occasions, we also illustrate how the improved understanding of defect nucleation and transformation can be used to improve wafer quality and device yield.
66)
Denuded Zone Evaluation in Rapid Thermal Annealed Wafers
G. Kissinger, J. Vanhellemont, G. Obermeier, J. Esfandyari
Materials Science and Engineering B73,106 (2000)
Oxygen outdiffusion by conventional annealing results in well defined denuded zones and the dissolution of grown-in oxide precipitate nuclei in the region near the surface. During a rapid thermal anneal (RTA) the grown-in oxide precipitate nuclei shrink and due to vacancy outdiffusion during cooling the subsequent growth of the precipitate nuclei is suppressed in the region near the surface. However, potential defects still exist in the region near the surface which can grow during ramping with 1 K min-1 starting from 500 0C. A dissolution of grown-in oxide precipitate nuclei in the region near the surface seems only possible by RTA in argon/hydrogen atmosphere. The denuded zone defect density is much lower after RTA than after conventional annealing for oxygen outdiffusion, while the depth profile of the defect density is less steep. The use of the above mentioned conclusions for 'ramp engineering' in device processing allows the creation of excellent denuded zones during a device process itself without influencing the device characteristics.
65)
Comparison of SiGe and SiGe:C : Heterojunction Bipolar Transistors
D. Knoll, B. Heinemann, K.-E. Ehwald, B. Tillack, P. Schley, H.-J. Osten
Thin Solid Films, 369(1-2), 342 (2000)
We compare the performance of heterojunction bipolar transistors with pure SiGe (SiGe HBTs) with those incorporating C-doped SiGe base layers (SiGe:C HBTs). The transistors were produced in a single-polysilicon technology with implanted, epi-free wells. Doping the SiGe layers with low C concentration ( 0.2%) allows us to use a higher base boron dose than for C-free HBTs, without B outdiffusion from the heteroepitaxial layer. As a result, the device RF performance can be significantly improved. The higher base doping of SiGe:C HBTs increases the peak fmax from around 50 up to more than 80 GHz, and reduces the minimum noise figure (at 10 GHz) from >3 to 2 dB and ring oscillator delays from 21-22 to 12-14 ps. The SiGe:C HBTs also exhibit leakage currents, which are sufficiently low for reliable IC application.
64)
Improving the Efficiency of Automated Protocol Implementations Using a Configurable FDT Compiler
H. König, P. Langendörfer, H. Krumm
Computer Communications 23(12), 1179 (2000)
The integration of efficient implementation techniques, which have been proven in manual coding, into FDT compilers is difficult because of the semantic constraints of the FDTs and the lack of language means to flexibly adapt to a given implementation context. In this paper, we discuss ways to improve the efficiency of automated protocol implementations to make them applicable to real-life implementations. For solution, we introduce the concept of a configurable FDT compiler that supports the application of different implementation techniques and the adjustment of the implementation to the given implementation context. The paper discusses the semantic conflicts to be solved when applying optimizing implementation techniques. It introduces a compile time reordering of transitions to cope with these problems. Finally we present measurements that prove a considerable efficiency gain of the generated code as well as a comparison with the Cadvanced compiler of the SDT tool set.
63)
Arsenic Doped Buried Plate Characterization in Deep Trenches for a 0.25 µm CMOS Technology by Chemical Etching
D. Krüger, P. Gaworzewski, R. Kurps, K. Schmidt, C. Luhmann
Journal of Vacuum Science and Technology B, 18(1), 477, (2000)
We present examples for two-dimensional charge carrier density characterization in advanced semiconductor technologies. The analysis was performed by charge carrier density selective etching in HF:HNO3=1:100-1:200 solutions. We applied a scanning electron microscopy stereo technique for visualization of the two-dimensional etch depth distributions. Different applications of etching techniques are given. Etching of test structures involving sharp boron concentration spikes demonstrates an obtainable lateral resolution in the order of 10 nm. The dependence of the etching rate on charge carrier (dopant) density was analyzed from comparison with reference samples. For etch solutions of HF:HNO3=1:100, we found that etching starts at As densities of about 1 x 1017 cm-3 for fixed etch times of 10 s. Strongly enhanced etching with a nearly constant etch rate was observed for As densities above 3 x 1019 cm-3. Application of the stereo scanning electron microscopy method allows two-dimensional characterization of highly B doped source-drain areas in metal-oxide-semiconductor field effect transistors. Furthermore, we performed "n-buried plate" dopant density characterization in a 0.25 µm complementary metal-oxide-semiconductor technology. To now, the application of the scanning electron microscopy stereo technique fails for low As densities of the buried plate near the deep trench. Using focused ion beam techniques at polished cross sections opens a possibility to characterize quasi-three-dimensional dopant distributions on a sub-0.25 µm level, qualitatively.
62)
Influence of Fluorine Contamination on Intrinsic Reliability of Thin Gate Oxides
D. Krüger, P. Gaworzewski, R. Kurps, K. Pomplun
Microelectronics Reliability 40, 1335, (2000)
We analyze diffusion and segregation kinetics of fluorine atoms in poly-Si/SiO2/Si structures with gate oxides of 5 nm by means of secondary ion mass spectroscopy. Well defined doses of fluorine were introduced by ion implantation. Our results indicate fluorine segregation at interfaces to the gate oxide. This segregation is diffusion limited with an effective activation energy of 1.4 eV. The accumulation of fluorine influences the intrinsic reliability of thin oxides. The breakdown behavior was studied using constant voltage, constant current, and stepwise increasing constant current stress, respectively. Weibull plots before and after the heat treatments were analyzed. At low fluorine concentrations up to doses of 5 x 1015 cm-2 fluorine segregation is beneficial, improving, for example the tails of the Weibull plots and slightly increasing the breakdown voltage. For fluorine doses higher than 1 x 1016 cm-2, detrimental consequences were found, degrading the charge to breakdown values by about a factor of 5 after long-term thermal treatments.
61)
X-ray Photoelectron Spectroscopic Studies of Electrodeposited Mercury Cadmium Telluride Semiconductor Thin Films
R. Kumaresan, R. Gopalakrishnan, S.M. Babu, P. Ramasamy, D. Krüger, P. Zaumseil
Journal of the Physics and Chemistry of Solids, 61(5), 765 (2000)
Mercury cadmium telluride (MCT) polycrystalline thin films were grown by electrodeposition technique, at varying conditions. The X-ray photoelectron spectroscopic (XPS) studies have been carried out on MCT thin films to analyze the quality and nature of the films. The various elements present and the surface contamination in electrodeposited MCT films were identified. The chemical states of the various elements present were studied and their quantification was also carried out. The deposition conditions were identified for growing the MCT films of specific compositions.
60)
Quality Assessment of Bridgman-grown CdTe Single Crystals Using Double-crystal X-ray Diffractometry (DCD) and Synchrotron Radiation
R. Kumaresan, R. Gopalakrishnan, S. Moorthy Babu, P. Ramasamy, P. Zaumseil, M. Ichimura
Journal of Crystal Growth , 210(1-3), 193 (2000)
Double-crystal X-ray diffractometry (DCD) with conventional and synchrotron radiation was utilized to study the quality of Bridgman-grown CdTe single crystals. The FWHM of the CdTe crystals have been investigated on various parts of the grown crystal. The (111)CdTe rocking curve obtained by DCD showed an FWHM value of around 72 arcsec for the outer edge of the grown crystal. Also, the rocking curve analysis was carried out by using synchrotron radiation. At the core of the grown crystal, the lowest FWHM value of 17 arcsec was measured, which exhibited the good quality of the crystal. The quality of the crystal at various parts was ascertained by means of a rocking curve FWHM profile.
59)
Substitutional Carbon Incorporation During Si1-x-yGexCy Growth on Si(100) by Molecular Beam Epitaxy: Dependence on Germanium and Carbon
J.P. Liu, H.-J. Osten
Applied Physics Letters, 76(24), 3546 (2000)
We present results on the kinetics of substitutional carbon incorporation during growth of Si1-x-yGexCy alloys on silicon (100) using solid-source molecular-beam epitaxy. Substitutional carbon concentration decreases with increasing germanium content for samples grown at 400 0C with the same carbon flux and growth rate. The reduction in substitutional carbon concentration is small at low carbon flux, increasing significantly at higher carbon fluxes. The results indicate that the effect of either Ge or C concentration can dominate the substitutional C incorporation, depending on the total C concentration range.
58)
Connection between Charge Transfer and Alloying Core-level Shifts Based on Density-functional Calculations
M. Methfessel, V. Fiorentini, S. Oppo
Physical Review B 61(8), 5229 (2000)
The measurement of alloying core-level binding energy (CLBE) shifts has been used to give a precise meaning to the fundamental concept of charge transfer. Here, ab initio density-functional calculations for the intermetallic compound MgAu are used to investigate models which try to make a connection between the core levels shifts and charge transfer. The calculated CLBE shifts agree well with experiment, and permit an unambiguous separation into initial-state and screening contributions. Interestingly, the screening contribution is large and cannot be neglected in any reasonable description. Comparison of the calculated results with the predictions of simple models show that these models are not adequate to describe the realistic situation. On the positive side, the accuracy of the density-functional calculations indicates that the combination of experiments with such calculations is a powerful tool to investigate unknown systems.
57)
Assessment of Silicon Wafer Material for the Fabrication of Integrated Circuit Sensor
T. Müller, G. Kissinger, A.C. Benkitsch, O. Brand, H. Baltes
Journal of the Electrochemical Society, 147(4), 1604 (2000)
The influence of process induced defects on the surface quality of wet anisotropically etched cavities in silicon wafers is investigated. Localized thinning of silicon substrates using cavities of this kind is a common method for fabricating, e.g., diaphragms for silicon pressure sensors. Wafers with four different concentrations of interstitial oxygen varying from 6.0 x 1017 cm-3 to 9.3 x 1017 cm-3 were exposed to a thermally simulated complementary metal oxide semiconductor process and subsequently anisotropically etched with potassium hydroxide or tetramethylammonium hydroxide solution. Crystal defects caused by oxygen precipitation, such as stacking faults, punching systems, and dislocations, were found to be the origin of large craterlike defects in the sidewalls of the cavities. Wafer material with an initial concentration of interstitial oxygen between 6.0 x 1017 cm-3 and 6.9 x 1017 cm-3 exhibits a very low density of small precipitate-dislocation complexes and, thus, etched cavities of good surface quality are obtained. In wafers with interstitial oxygen concentrations higher than 7.8 x 1017 cm-3 bulk stacking faults were observed and the surface quality of the cavity sidewalls diminishes. The microscopic morphology of the craterlike defects in the (111) sidewalls of the etched cavities is explained using a computer simulation of the etching process. An influence of process induced defects on the surface quality of wet anisotropically etched (100) surfaces was not found.
56)
Atomically Smooth Ultrathin Oxide Layers on Si(113)
H.-J. Müssig, J. Dabrowski, S. Hinrich
Microelectronics Reliability 40(4-5), 577 (2000)
We report the first direct observation of dissociative chemisorption of O2 molecules on a Si surface. We link this to our other new observation that smooth oxide layers can be grown easily of Si(113). The initial oxidation is discussed in terms of surface diffusion paths and surface stress. Ab initio calculations help elucidate the favored adsorption sites and the oxidation mechanism.
55)
Cross-sectional STM/STS - a Useful Tool for Identification of Dopants in Silicon
R. Nuffer, H.-J. Müssig, J. Dabrowski
Solid State Electronics 44(5), 875, (2000)
This paper presents theoretical and experimental evidence that boron dopants can be detected on in situ prepared Si(111) (7 x 7) surfaces by scanning tunneling microscopy (STM). Using scanning tunneling spectroscopy (STS), imaged layers of different dopant concentration were produced by molecular beam epitaxy (MBE). The samples were ex situ cleaved and hydrogen passivated Si(110). The results indicate that STM/STS is suitable for two-dimensional dopant profiling in Si with extremely high lateral resolution.
54)
Influence of Carbon Incorporation on Dopant Surface Segregation in Molecular-Beam Epitaxial Growth of Silicon.
H.-J. Osten, G. Lippert, J.P. Liu, D. Krüger
Applied Physics Letters 77(1), 2000, (2000)
We describe the effect of carbon incorporation into Si on dopant surface segregation during molecular-beam epitaxial growth. Low concentration of carbon can significantly reduce the surface segregation of boron and phosphorus. Combining the surface diffusion model with a two-state exchange process, we are able to model the experimental results over the whole temperature range between 350 and 800 0C. Each exchange process alone is not sufficient to describe surface segregation at all investigated temperatures. Our results show that the presence of carbon lowers the energy difference for boron in subsurface and surface states. The energy barriers for surface diffusion as well as for the two-state exchange process are not affected by carbon.
53)
MBE Growth and Properties of Supersaturated, Carbon Containing Silicon / Germanium Alloys on Si(001)
H.-J. Osten
Thin Solid Films, 367(1-2), 101 (2000)
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1% C can be fabricated by molecular beam epitaxy and various chemical vapor deposition techniques. One of the most crucial questions is the relation between substitutional and interstitial carbon incorporation, which has a large impact on the electrical and optical properties of these layers. The carbon substitutionality (fraction of substitutional incorporated carbon atoms) is strongly influenced by the growth conditions, such as growth temperature and Si growth rate. The mechanical and structural properties, and the influence of C atoms on band structure and charge carrier properties will be discussed. Further, we will show how lower carbon concentrations can influence dopant diffusion, without affecting strain and band alignment. We demonstrated that suppressed boron diffusion in carbon-rich epitaxial layers can be used to increase the performance of SiGe heterojunction bipolar transistors (HBTs). We demonstrate epitaxially grown SiGe:C HBTs with static and dynamic performance suitable for high frequency applications. Compared to SiGe technologies, the addition of carbon provides significantly greater flexibility in process design and offers wider latitude in process margins. The physical mechanism for suppressed boron diffusion in carbon-rich Si and SiGe (about 0.1% carbon) is an undersaturation of Si self-interstitials due to outdiffusion of carbon.
52)
The Influence of Interstitial Carbon Defects on Electron Transport in Strained Si1-yCy Layers on Si(001)
H.-J. Osten, J. Griesche, P. Gaworzewski, K.-D. Bolze
Applied Physics Letters 76(2), 200 (2000)
We present experimental results on Hall mobilities of electrons in tensile strained Si1-yCy layers with a substitutional carbon yS=0.4%, but different concentrations of interstitial carbon. Although the lattice distortion due to misfit strain and hence, the band alignment are identical for all investigated samples, we find differences in electron mobility of nearly a factor 2 due to the varying concentration of interstitial carbon. For the highest interstitial C concentration (1 x 1020 cm-3), it was not even possible to obtain any reliable electrical data. We demonstrate that it is not sufficient to consider only strain in evaluating electrical properties of C containing layers. Specific growth conditions can lead to very different electrical properties due to the different amounts of interstitial C, even for pseudomorphically strained layers with the same lattice mismatch and band alignment.
51)
SiGe:C Alloys: Growth, Properties and HBT Devices
H.-J. Osten
Bulletin of the American Physical Society 45, 585 (2000)
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 % C can be fabricated by MBE and various CVD techniques. One of the most crucial questions is the relation between substitutional and interstitial carbon incorporation, which has a large impact on the electrical and optical properties of these layers. The carbon substitutionality (fraction of substitutional incorporated carbon atoms) is strongly influenced by the growth kinetics. The mechanical and structural properties, and the influence of C atoms on band structure and charge carrier properties will be reviewed. Further we will show, how lower carbon concentrations can influence dopant diffusion, without affecting strain and band alignment. We demonstrated that suppressed boron diffusion in carbon-rich epitaxial layers can be used to increase the performance of SiGe heterojunction bipolar transistors (HBTs). We demonstrate epitaxially grown SiGe:C HBTs with static and dynamic performance suitable for high frequency applications. Compared to SiGe technologies, the addition of carbon provides significantly greater flexibility in process design and offers wider latitude in process margins. The physical mechanism for suppressed boron diffusion in carbon-rich Si and SiGe (about 0.1 % carbon) is an undersaturation of Si self-interstitials due to outdiffusion of carbon. We observed experimentally a reduction of the diffusion coefficient of boron by more than one order of magnitude due to incorporation of 0.1% carbon. The experimentally observed impact of carbon on dopant diffusion is consistently described by coupled diffusion equations for Si point defects and dopant atoms.
50)
Low Temperature Si Epitaxy in a Vertical LPCVD Batch Reactor
G. Ritter, J. Harrington, B. Tillack, T. Morgenstern, G.R. Dietze, Z.J. Radzimski
Materials Science & Engineering B ,B73(1-3), 203 (2000)
Silicon epitaxy on wafers is becoming more and more important for substrates in CMOS mass production, and has traditionally been used for bipolar and BiCMOS devices. This paper presents a new process solution in a vertical low-pressure chemical vapor deposition reactor allowing low cost batch processing for deposition of thin Silicon epitaxial layers at temperatures not exceeding 800 0C. In situ cleaning of wafers in the reactor prior to the SiH4 deposition process shows significant influence on the quality of epitaxial layers. The problem of deposition on hot reactor walls has been solved by integration of remote plasma enhanced dry etching. We will present test results demonstrating the capabilities of the epitaxy process in this new tool. Finally, cost of ownership calculations will be presented showing the economic attraction of this new solution in comparison with single-wafer high temperature techniques.
49)
Two- and Three-dimensional Numerical Modeling of Copper Electroplating for Advanced ULSI Metallization
G. Ritter, P. McHugh, G. Wilson, T. Ritzdorf
Solid-State Electronics, 44(5), 797 (2000)
In this paper various electrochemical copper deposition (ECD) methods will be reviewed and the advantages of electrochemical deposition demonstrated. In order to understand the electrochemical deposition process and to improve the uniformity of copper layers deposited on large Si wafers, modeling of ECD is necessary. Important components of a numerical model and the benefits of simplified simulations are discussed. Several two- and three-dimensional simulations are presented illustrating some of the challenges in growing uniform copper films. In addition to macro-scale modeling, micro-scale predictions of the copper filling characteristics of circuit features on a wafer (i.e., high-aspect ratio trenches) are another important modeling application. Selected micro-scale modeling results from the literature will be reviewed.
48)
Co Silicide Formation on Epitaxial Si1-yCy /Si(001) Layers
Y. Roichman, A. Berner, R. Brener, C. Cytermann, D. Shilo, E. Zolotoyabko, M. Eizenberg, H.J. Osten
Journal of Applied Physics 87 (7), 3306, (2000)
We investigated the formation and structure of cobalt silicide (CoSi2) on Si1-yCy (0£ y£ 0.81%) layers grown by molecular beam epitaxy on Si (001). The incorporation of C in the Si lattice causes the following phenomena during silicidation: (i) the formation of CoSi2 is delayed in temperature scale, as compared to pure Si; (ii) epitaxial CoSi2 grains are formed at T³ 600 0C; (iii) a two sublayer structure of CoSi2 is observed, where the upper sublayer contains a very small amount of C and has a homogeneous microstructure, while the lower sublayer, which has a higher C concentration, contains randomly oriented CoSi2 nanocrystallites; (iv) spatial inhomogeneity results in significant variation (within ± 40%) in the CoSi2 layer thickness; (v) no strain relaxation in the Si1-yCy layer during silicidation is detected up to 700 0C; and (vi) the distribution of carbon and boron in the semiconductor during silicidation is not changed significantly. The two latter findings show the potential of CoSi2 on Si1-yCy for device application despite the mentioned inhomogeneity in CoSi2 microstructure.
47)
Tailoring Dopant Diffusion for Advanced SiGeC Heterojunction Bipolar Transistors
H. Rücker, B. Heinemann
Solid State Electronics 44(5), 783, (2000)
We demonstrate that dopant diffusion coefficients in Si can be changed by more than one order of magnitude due to alloying with Ge and C. The observed suppression of boron diffusion in C-rich layers is explained on the basis of coupled diffusion of Si point defects and carbon. A model for B diffusion and segregation in SiGe heterostructures in presented. The consequences of the unique diffusion properties of SiGe:C alloys for heterojunction bipolar transistors are investigated by process and device simulation.
46)
Thin films of CoSi2 on Si1-yCy Substrate Layers
S. Teichert, H. Giesler, M. Falke, G. Beddies, H.-J. Hinneberg, G. Lippert, J. Griesche, H.J. Osten
Microelectronic Engineering 50 (1-4), 193 (2000)
The reaction of Co with epitaxial Si1-yCy(001) films is investigated with regard to dependence on annealing temperature and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for thin CoSi2 films grown at 650 0C on Si0.999C0.001 and on Si. Whereas the CoSi2 is fully polycrystalline on Si(001), partially oriented CoSi2 has been observed on C-containing substrate layers. An increase of the number of epitaxially grown CoSi2 crystallites has been observed with increasing C concentration.
45)
Atomic Layer Doping of SiGe - Fundamentals and Device Applications
B. Tillack, B. Heinemann, D. Knoll
Thin Solid Films 369, 189 (2000)
The paper reviews results of atomic layer processing for P and B doping of SiGe and for SiGe:C epitaxy using LP(RT)CVD. Atomic layer processing for the base doping of SiGe:C heterojunction bipolar transistors (HBTs) is demonstrated for the first time. P atomic layer doping is self-limiting. The process is controlled by the dissociative adsorption of PH3 with an activation energy of 0.3 eV. We find no self-limitation of diborane adsorption for B atomic layer doping. At low diborane partial pressures, the doping is dominated by the dissociative adsorption of diborane at Si and Ge surface sites. B doses below 1 ML can be deposited. At high partial pressures of diborane the diborane is adsorbed at B occupied surface sites, resulting in several monolayer equivalents of B. The SiGe:C atomic layer epitaxy is found to be controlled by the dissociative adsorption of methylsilane with an activation energy of 0.36 eV. Transit frequencies of about 45 GHz have been obtained for B atomic layer doped SiGe:C HBTs. The HBT results demonstrate the capability of atomic layer processing for doping of advanced devices with critical requirements for dose and location control.
44)
Cross-sectional EBIC Analysis of the Passivation of Extended Defects in Cast Multicrystalline Silicon by Remote Hydrogen Plasma Treatment
O.F. Vyvenko, O. Krüger, M. Kittler
Applied Physics Letters 76(6), 697 (2000)
Cross-sectional and temperature-dependent measurements of the electron-beam-induced current reveal the depth profile of the recombination activity of grain boundaries and intragrain dislocations in cast multicrystalline Si. After remote hydrogen plasma treatment for 1 h at 310 0C, defects are passivated down to a depth of 100 µm. Even the activity of crystal defects exhibiting small or not detectable room temperature contrast is further reduced by hydrogenation. We interpret the experimental data in terms of a recently developed model, which relates the temperature behavior of the recombination activity to the density of (contaminant-induced) deep levels at the defects.
43)
In Search of Optimum Conditions for the Growth of Sharp and Shallow B-delta Markers in Si by Molecular Beam Epitaxy
K. Wittmaack, J. Griesche, H.-J. Osten, S.B. Patel
Journal of Vacuum Science and Technology B18(1), 524, (2000)
Multiple boron delta spikes in silicon, with spacings between 4.3 and 20 nm, have been grown by molecular beam epitaxy at temperatures of about 100 0C (L1) and 400 0C (S4). The test samples were depth profiled by secondary ion mass spectrometry using 500 eV O2+ at normal beam incidence. The surface of S4 was quite smooth, with a root mean square roughness s < 0.1 nm. By contrast, L1 was rather rough,s@ to 0.5 nm. The boron depth profiles of S4 revealed sharp peaks but pronounced tails on either side. The tails, which dominate the dopant distributions at concentrations below about 40% of the peak level, are attributed to defect-promoted boron diffusion during growth. Sample L1 showed boron spikes of larger width above the 10%-20% peak level, but a much more rapid, roughly exponential falloff on both sides. This sharpness of the dopant spikes implies the absence of boron diffusion during low-temperature growth. The "best" deltas (those with small width and sharp falloff) were obtained with boron contaminants of ambient origin that resided at the (oxidized) interface between the substrate and the silicon buffer layer. This observation suggests that boron atoms in silicon dioxide are rather immobile. Depth profile measurements on crystalline samples, either containing boron deltas or being uniformly doped with boron, revealed severe variations of the B+ signal over a depth of up to 25 nm at normal and oblique beam incidences (up to 50 0, also with oxygen flooding). Silicon matrix signals measured in parallel did not show any variation beyond the transient depth. The initial overshoot of the B+ signal, observed just below the transient depth, sometimes exceeded the stationary signal by more than a factor of 2, and the signal undershoot in extended regions at larger depths was low by up to several 10%. This artifact calls for recalibration of previously reported profiles of shallow boron implantations in silicon.
42)
Nitrogen Trapping of Boron and Phosphorus in Silicon
V.G. Zavodinsky, A.V. Visikovski, I.A. Kuyanov, J. Dabrowski
Physics of Low-Dimensional Structures (3-4), 13 (2000)
Using ab initio (Hartree-Fock and local density approximation) and semiempirical (Austin Model 1) calculations we have studied the energetics and electronic structures of N+B and N+P complexes. We have found that these complexes are electrically inactive. The energy gains are 1.6 eV for the N+B coupling and 2.4 eV for the N+P pairing. The N-P and N-B interatomic equilibrium distances are about 3.5 AA for the both complexes.
41)
Band Offsets and Electron Transport Calculation for Strained Si1-x-yGexCy/Si Heterostructures
P. Dollfus, S. Galdin, H.-J. Osten, P. Hesto
Proc. 3rd ICMM, (IOM Communications), p. 143 (2000)
40)
A Scalable Location Aware Service Platform for Mobile Applications Based on Java RMI
O. Drögehorn, K. Singh-Kurbel, M. Franz, R. Sorge, R. Winkler
Trends in Distributed Systems: Towards a Universal Service Market, Lecture Notes in Computer Science 1890, p. 296, Springer (2000)
39)
High Performance Integrated Spiral Inductors Based on a Minimum AC Difference Voltage Principle
H.B. Erzgräber, M. Pierschel, G.G. Fischer, T. Grabolla, A. Wolff
2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers, New York : IEEE, 2000, p. 71
38)
Application of Synchrotron Radiation Based X-ray Fluorescence Microprobe to Detect Impurities at the Location of a Shunt
C. Flink, S.A. McHugo, W. Seifert, M. Langenkamp, A.A. Istratov, R. Sachdeva, E.R. Weber
Proc. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Copper Mountain, Colorado, Aug. 14-16, p. 212 (2000)
37)
A 5.8 GHz Si/SiGe VCO with Amplitude Control for Wireless LAN Applications
G. Grau, U. Langmann, W. Winkler, D. Knoll, K. Pressel
Final Program and Abstracts Topical Workshop on Heterostructure Microelectronics, Kyoto, 2000, p.82
36)
Distribution of Barrier Heights in W/Si1-x-yGexCy Schottky Diodes
A. Hattab, M. Barthula, F. Meyer, P. Warren, H.-J. Osten
Proc. 3rd ICMM (IOM Communications), p. 247(2000)
35)
Latchup Immunity and Well Profile Design by a Deep Carbon-Doped Layer
B. Heinemann, R. Barth, D. Bolze, K.-E. Ehwald, D. Knoll, D. Krüger, R. Kurps, H. Rücker, P. Schley, B. Tillack, D. Wolansky
Proc. IEDM, p. 471, 2000,
34)
A New Approach to Fully Integrated CMOS LC-Oscillators with a Very Large Tuning Range
F. Herzel, H. Erzgräber, N. Ilkov
Proc. CICC 2000, p. 573
33)
An Accurate, Experimentally Verified Electron Minority Carrier Mobility Model for Si and SiGe
C. Jungemann, B. Heinemann, K. Tittelbach-Helmrich, B. Meinerzhagen
Proc. IEDM, p. 101, 2000
32)
Emitter Scaling of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers
D. Knoll, B. Heinemann, K.-E. Ehwald, G.G. Fischer, B. Hunger
Proc. ESSDERC 2000, Gif sur Yvette Cedex, Ed. Frontiers, p. 560
31)
Evaluation of Well-known Protocol Implementation Techniques for Application in Mobile Networks
P. Langendörfer, H. König
Proc. of the Int. Conference on Internet Computing. - Eds. P. Graham, M. Maheswaran, CSREA Press, 2000, p. 451
30)
Full-Potential LMTO Method Based on Smooth Hankel Functions
M. Methfessel, M.V. Schilfgaarde, R. Casali
In: Electronic Structure and Physical Properties of Solids/ ed. H. Dreysse, Lecture Notes in Physics, Springer Verl., 2000
29)
High-k Gate Dielectrics with Ultra-Low Leakage Current Based on Praseodymium Oxide
H.-J Osten, J.P. Liu, P. Gaworzewski, E. Bugiel, P. Zaumseil
Proc. IEDM, p. 653, 2000
28)
Dry Etching of Antireflective Coatings in Sub-quarter Micron Technologies
H.H. Richter, A. Wolff, S. Dietrich, H. Silz, R. Barth, I. Jürgensen, M. Stegemann, S. Wege
Proc. XIII. Int. Conf. on Gas Discharges and their Applications, /Ed. S.J. MacGregor, p.647
27)
Ultrasound Effects on Radiation Damage in Si
B. Romanjuk, D. Krüger, V. Melnik, Ya. Olikh, V. Popov, V. Soroka, O. Oberemok
Semiconductor Physics, Quantum Electronics and Optoelectronics, 3, 59 (2000)
26)
11 GHz SiGe Circuits for Ultra Wideband Radar
M. Roßberg, J. Sachs, P. Rauschenbach, P. Peyerl, K. Pressel, W. Winkler, D. Knoll
Proc. of the 2000 Bipolar / BiCMOS Circuits and Technology Meeting, p. 70
25)
Suppressed Boron Diffusion in Carbon-Doped SiGe Heterojunction Bipolar Transistors
H. Rücker, B. Heinemann, D. Knoll, H.-J. Osten
International Physics Conference Series, 166, 287 (2000)
24)
Determination of the Recombination Lifetime in the Space Charge Region of MOS Field Induced PN-Junctions
R. Sorge, B. Heinemann, H. Richter, J. Grabmeier, G. Obermeier
Proc. ESSDERC 2000, Gif sur Yvette Cedex, Ed. Frontiers, p. 484
23)
Active Substrate Noise Suppression in Mixed-Signal Circuits Using On-Chip Driven Guard Rings
W. Winkler, F. Herzel
Proc. CICC 2000, p. 357
Accepted Papers
22)
Interaction of Vacancies with Interstitial Oxygen in Silicon
R.A. Casali, H. Rücker, M. Methfessel
Applied Physics Letters
21)
Segregation of Phosphorus to Si/SiO2 Interfaces
J. Dabrowski, H.-J. Müssig, R. Baierle, M.J. Caldas, V. Zavodinsky
Materials Science in Semiconductor Processing
20)
Investigation of Stress in Shallow Trench Isolation using UV Micro-Raman-Spectroscopy
K.F. Dombrowski, B. Dietrich, I. de Wolf, R. Rooyackers, G. Badenes
Microelectronics Reliability
19)
Supporting Mobile Applications in Wireless Access Networks- A Scalable Location Aware Service Platform
O. Drögehorn, K.Singh-Kurbel, R. Winkler, M. Franz, R. Sorge, O. Maye
MOMUC 2000, 7th Int. Workshop on Mobile Multimedia Communications, Oct. 23-26, 2000
18)
On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations
T. Hoffmann, K.F. Dombrowski, V. Senez
Proc. of the Modeling and Simulation of Microsystems Conference, 27.-29.3.2000, San Diego
17)
Elektrische Eigenschaften von Kristalldefekten in multikristallinen Si-Materialien und Solarzellen: Charakterisierung des Einflusses unterschiedlicher Behandlungen durch mikroskopische Techniken
M. Kittler, O. Krüger, W. Seifert
Freiberger Forschungshefte
16)
Electrical Behaviour of Crystal Defects in Silicon Solar Cells
M. Kittler, W. Seifert, O. Krüger
Proc. BIAMS 2000
15)
Extension of Hydrogen Passivation of Intragrain Defects and Grain Boundaries in Cast Multicrystalline Silicon
O. Krüger, W. Seifert, M. Kittler, O.F. Vyvenko
Physica Status Solidi b(222), Nov. 2000
14)
Temperature Dependence of Recombination Activity of Contaminated Dislocations in Silicon: A Model Describing the EBIC Contrats Behaviour
V. Kveder, M. Kittler, W. Schröter
Physical Review
13)
Full-Potential LMTO for Crystals
M. Methfessel, M.V. Schilfgaarde
Conf. Proc. Series of the Italian Physical Society
12)
Formation of Atomically Smooth Ultrathin Oxides on Si(113)
H. -J. Müssig, J. Dabrowski, S. Hinrich
Solid State Electronics
11)
Can Si(113) Wafers be an Alternative to Si(001)
H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert
Proc. The 3rd Int. Symp. on Advanced Science and Technology of Silicon Materials, Aston Keauhou Beach Resort, Kona, Hawaii, Japan Society for Promotion of Science (JSPS)
10)
Can Si(113) Wafers be an Alternative to Si(001)
H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert
Solid State Electronics
9)
Epitaxial, High-K Dielectrics on Silicon: The Example of Praseodymium Oxide
H.-J. Osten, J.P. Liu, H.-J. Müssig, P. Zaumseil
Microelectronics Reliability
8)
High-K Dielectrics: Moving Beyond the Silicon Dioxide Era
H.-J. Osten
Vacuum Solutions
7)
Plasma Etching in Microelectronics
H.H. Richter, A. Wolff
In : Lectures in Physics and Plasma Technology. Wiley-VCH, Weinheim, 2000
Eds.: R. Hippler, S. Pfau, K.H. Schoenbach, M. Schmidt
6)
Suppression of Boron Diffusion by Carbon: A New Route to Advanced Heterobipolar Transistors
H. Rücker, H.-J. Osten
Physics of SiGeC, ed. by S.T. Panelides, S. Zöllner, New York : Gordon and Breach
5)
Modeling the Influence of Dislocations on Minority-carrier Diffusion Length in Si as Function of Dislocation Contamination
Seifert, M. Kittler
Proc. BIAMS 2000
4)
Über Möglichkeiten der Charakterisierung von mc-Si durch SiPHER
W. Seifert, O. Krüger, M. Kittler, V. Higgs
Freiberger Forschungshefte
3)
G Wet Chemical Cleaning of Si for Low Temperature Epitaxy of Si, SiGe and SiGe:C
B. Tillack B., D. Wolansky, K. Blum
Handbook of Thin Film Process Technology
2)
Depth Profiling of the Recombination Activity of Defects Measured by Temperature-dependent Cross-sectional EBIC
O.F. Vyvenko , O. Krüger, M. Kittler
Proc. BIAMS 2000
1)
Inline Characterization of SiGe Structures on 8 Inch Si Wafers Using the Bede QC200 X-Ray-Diffractometer
P. Zaumseil, T.A. Lafford, M. Taylor
Journal of Physics D
Invited Presentations
45)
Von der Grundlagenforschung zur technologischen Anwendung -
Raman-Spektroskopie an Bauelementestrukturen der Silizium-Mikroelektronik
B. Dietrich
Seminar-Vortrag , Physikalisches Institut der Universität , 22.06.2000,Göttingen, Germany
44)
Collaboration WSAG - IHP: Summary of Results 2000
A. Fischer
Wacker Siltronic AG, 18.12.00, Burghausen, Germany
43)
Asynchronous Circuit Design Techniques: An Overview
E. Grass
Presentation at Motorola, Munich, Jan.14th, 2000
42)
Asynchronous Circuit Design: Overview and Recent Developments
E. Grass
Presentation at Technical University Berlin, June 2000
41)
Architekturen und Komponenten für drahtlose Kommunikationsysteme
E. Grass
Presentation at Humboldt University, Dept. of Informatics, Berlin, July, 21, 2000
40)
Interstitials, Nuclei, and Thermal Donors the Key Players in the 500 0C Region
G. Kissinger
3rd Int. Symposium on Advanced Science and Technology of Silicon Materials, Kona, Hawaii, USA, Nov. 20-24, 2000
39)
Influence on Thermal Donors, Boron Doping, and Intrinsic Point Defect Profiles on Oxygen Precipitation
G. Kissinger
Wacker Siltronic AG, Burghausen, 02.02.2000, Germany
38)
Elektrische Aktivität von Kristalldefekten in multikristallinem Silicium
M. Kittler
Kristallzüchtungsschule 2000 " Von der Physik des Kristallwachstums zum maßgeschneiderten Werkstoff, 11.-15.09.2000, BTU Cottbus, Germany
37)
Elektrische Eigenschaften von Kristalldefekten in multikristallinen Si-Materialien und Solarzellen: Charakterisierung des Einflusses unterschiedlicher Behandlungen durch mikroskopische Techniken
M. Kittler, O. Krüger, W. Seifert
Freiberger Forschungsforum Kolloquium 2 'Halbleiter-Materialien, Prozeßtechnologie und Diagnostik', 15.-16.06.00
36)
Electrical Behaviour of Crystal Defects in Silicon Solar Cells
M. Kittler, W. Seifert, O. Krüger
BIAMS 2000 6th Int. Workshop on Beam Injection Assessment of Microstructures in Semiconductors, Nov. 12-16, 2000, Fukuoka, Japan
35)
Wireless Internet Applications and Systems
R. Kraemer
Vortrag KTH , 21.03.00, Stockholm, Sweden
34)
Bluetooth : ein neuer Standard für "short range" Kommunikation
R. Kraemer
M-Business Summer School, 18.09.00, Berlin, Germany
33)
Wireless Internet : More Than Just Internet Without Wire
R. Kraemer
Datacom-Kongress "Neue Wege in der Telekommunikation", 16.-17.10.00, Berlin, Germany
32)
Technologies for Mobile Connectivity
R. Kraemer, A. Ourmazd
Workshop Technologien für den Neuen Markt, 05.012.00 Berlin, Germany
31)
Wireless Engines for Wireless Internet
R. Kraemer
Conference on ICCCD, 14.-16.12.00, Kharagpur, India
30)
Technologies for Mobile Connectivity
R. Kraemer
Indian Institute of Technology, 13.12.00, Kharagpur, India
29)
Quantitative Model for EBIC Contrast and PL of Dislocations Decorated by Metallic Impurities
V. Kveder, M. Kittler, W. Schröter
EDS 2000, Extended Defects in Semciconductors, July 18-22, 2000, Brighton,
28)
IHP - Innovationen für die drahtlose Kommunikation der Zukunft
W. Mehr
10. Technologietag Ostbrandenburg, September 2000, Frankfurt (Oder), Germany
27)
Can Si(113) Wafers be an Alternative to Si(001)
H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert
The 3rd Int. Symp. on Advanced Science and Technology of Silicon Materials, Aston Keauhou Beach Resort, Kona, Hawaii, Japan Society for Promotion of Science (JSPS) , Nov. 20-24.2000
26)
Determination of Process Induced Dopant Re-Distributions by Electron Holography
A. Orchowski, W.-D. Rau, H. Rücker, P. Schwander, A. Ourmazd
MRS Spring Meeting 2000, April 24-28,
25)
Improved Dopant Diffusion Control in SiGe Heterostructure Devices by Carbon Co-Doping
H.-J. Osten
Europractise Workshop "High Speed Circuit Technologies Beyond 3 GHz", Febr. 2000, Ulm, Germany
24)
SiGe:C Alloys: Growth, Properties and HBT Devices
H.-J. Osten
Annual Meeting of the American Physical Society, March 2000, Minneapolis, USA
23)
SiGeC for Telecommunications
H.-J. Osten
CHiPPS 2000, Mai 2000, Wandlitz, Germany
22)
Silicon-based Technologies for Wireless: A Value-added Approach
A. Ourmazd
2000 Topical Workshop on Heterostructure Microelectronics, 23.08.00, Kyoto, Japan
21)
Is their Life Beyond Conventional Silicon?
A. Ourmazd
Physics Colloquium, 16.05.00, Dresden, Germany
20)
The Transistor in 2020
A. Ourmazd
ENDEASD, 25.06.00 Stockholm, Sweden
19)
TEM Electron Holography: Principles and Applications
A. Ourmazd
2000 International Conference on Characterization and Metrology for ULSI Technology, 28.06.00, NIST Gaithersburg
18)
TEM Electron Holography: Principles and Applications
A. Ourmazd
Sematech Working Group Meeting, 29.06.00, NIST Gaithersburg
17)
Silicon-based Technologies for Wireless: A Value-added Approach
A. Ourmazd
Elektrotechnisches Kolloquium, 18.07.00, Universität Stuttgart, Germany
16)
Silicon-based Technologies for Wireless: A Value-added Approach
A. Ourmazd
4. Handelsblatt-Jahrestagung "Halbleiter-Industrie 2000", 26.09.00, Berlin, Germany
15)
The Viewpoint of Science : Using Performance Measures to Optimise Cooperation with Industry in a Large Public Research Institution
A. Ourmazd
Joint German-OECD Conference on Benchmarking Industry-Science Relationships, 17.09.00, Berlin, Germany
14)
The Fight for Talent
A. Ourmazd
Stipendiatentreffen der Alexander-von Humboldt-Stiftung, 26.10.00, Berlin, Germany
13)
SiGe:C - Von der Physik zur Innovation
K. Pressel
Vortrag am Kristollgraphischen Institut der Universität Freiburg, 17.01.00, Freiburg, Germany
12)
Neue Perspektiven in der Siliziumtechnik
H. Richter
Graduiertenkolleg der TU Braunschweig und der Physikalisch Technischen Bundesanstalt, Braunschweig, 16.06.00, Germany
11)
Physik der Halbleiter-Technologie - ein attraktives Studienangebot aus der Kooperation IHP Frankfurt (O.) und BTU Cottbus
H. Richter
Hochschulinformationstag, 15.04.2000, Cottbus, Germany
10)
Mikroelektronik im Osten Deutschlands - Das IHP Frankfurt (Oder)
H. Richter
VDE/VDI Arbeitskreis Mikroelektronik Berlin-Brandenburg, 26.10.00, Berlin, Germany
9)
Materialrelevante Herausforderungen für die perspektivische Mikroelektronik
H. Richter
Kristallzüchtungsschule 2000, "Von der Physik des Kristallwachstums zum maßgeschneiderten Werkstoff", 11.-15. Sept. 2000, Cottbus, Germany
8)
Dopant Diffusion in SiGe and SiGeC Device Processing
H. Rücker, B. Heinemann, D. Knoll, B. Tillack
Seminar at Tohoku University, Sendai, 28.08.00, Japan,
7)
Dopant Diffusion and Point Defects in Carbon-Rich Silicon
H. Rücker
Seminar Universität Göttingen, 10.02.2000, Göttingen, Germany
6)
Atomic Layer Doping of SiGe
B. Tillack
Seminar at Motorola, 20.03.00, Phoenix, USA
5)
Atomic Layer Doping of SiGe for Heterojunction Devices
B. Tillack
Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (IUVSTA Workshop), Nov. 19-24, 2000, Mie, Japan
4)
SiGeC auf Silicium - Herstellung und Eigenschaften eines neuen Halbleitermaterials
B. Tillack
Kristallzüchtungsschule 2000 "Von der Physik des Kristallwachstums zum maßgeschneiderten Werkstoff", 11.-15.09.2000, BTU Cottbus, Germany
3)
SiGe:C Epitaxy for HBT Applications
B. Tillack
The 3rd International Epsilon User's Group Meeting: Si1-xGex and Low Temperature Si Epitaxy, Sept. 21, 2000, München, Germany
2)
Modelling of the Medium Access Control Layer of an IEEE 802.11 Wireless Local Area Network Using the SDL Language
K. Tittelbach-Helmrich, O. Krüger, J. Lehmann
Customer Workshop of Company Telelogic, 11.09.00, München, Germany
1)
Thickness and Composition Measurements of Strained Si1-x-yGexCy Alloys on Si
St. Zollner, J. Hildreth, R. Liu, M. Kottke, P. Zaumseil, M. Weidner, B. Tillack
APS March Meeting, Motorola, 22.03.00, USA
Presentations
58)
An Ultra Low-Power FIR Filter Using Sign-Magnitude Coefficients
V.A. Bartlett, E. Grass
ISLPED '2000, July 25-27, 2000
57)
Exploiting Data-Dependencies in Ultra Low-Power DSP Circuits
V.A. Bartlett, E. Grass
UK-Low-Power Forum, Oct 23-24, 2000, Manchester , UK
56)
Methodische Möglichkeiten der elektronenmikroskopischen Fehleranalyse im nm-Bereich am IHP
E. Bugiel
Regionaler Workshop "Fehleranalyse in siliziumbasierten Technologien", 12.04.00, Frankfurt (O.), Germany
55)
Interaction of Vacancies with Interstitial Oxygen in Silicon
R.A. Casali, H. Rücker, M. Methfessel
ChiPPS 2000, May 15-18 Wandlitz, Germany
54)
Concerted-Exchange Diffusion of Dopants
J. Dabrowski, H.-J. Müssig
Frühjahrstagung der DPG, Arbeitskreis Festkörperphysik, March 26-31, 2000, Regensburg, Germany
53)
Mechanism of Dopant Segregation to SiO2/Si(001) Interfaces
J. Dabrowski, H.-J. Müssig, R. Baierle, M.J. Cladas, V. Zavodinsky
27th Conf. on the Physics and Chemistry of Semiconductor Interfaces (PCSI-27), Jan., 16-20, 2000, Salt Lake City, Utah, USA
52)
Stress-Stabilized Oxidation of Silicon
J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, H.-J. Müssig
DPG-Frühjahrstagung des Arbeitskreises Festkörperphysik, March 26-31, 2000, Regensburg, , Germany
51)
Band Offsets and Electron Transport Calculation for Strained Si1-x-yGexCy/Si Heterostructures
P. Dollfus, S. Galdin, H.-J. Osten, P. Hesto
3rd ICMM, Oct. 2000, Dublin, Ireland
50)
WINEGLASS: A Scalable Location Aware Service Platform for Ad-hoc and Pre-installed Networks
O. Drögehorn, L. Schrix, C. Cheung
IST Mobile Communication Summit 2000, Oct. 1-4, 2000, Galway, Ireland
49)
Supporting Mobile Applications in Wireless Access Networks- A Scalable Location Aware Service Platform
O. Drögehorn, K.Singh-Kurbel, R. Winkler, M. Franz, R. Sorge, O. Maye
MOMUC 2000, 7th Int. Workshop on Mobile Multimedia Communications, Oct. 23-26, 2000
48)
High Performance Integrated Spiral Inductors Based on a Minimum AC Difference Voltage Principle
H.B. Erzgräber, M. Pierschel, G.G. Fischer, T. Grabolla, A. Wolff
2000 IEEE MTT-S Silicon Monolithic Integrated Circuits in RF Systems, , April 26-28, Garmisch-Patenkirchen, Germany
47)
Upper Yield Point of Large Diameter Silicon
A. Fischer, H. Richter, A. Shalynin, P. Krottenthaler, G. Obermeier, U. Lambert, R. Wahlich
E-MRS - IUMRS - ICEM 2000, 30.05.-02.06.2000, Strasbourg, France
46)
Novel Features of the Si(100)-4x4 Reconstruction Induced by the Interaction of Bi with the Si(100) Surface
A.M. Goryachko, P.V. Melnik, N.G. Nakhodkin, T.V. Afanasjeva, I.F. Koval
Frühjahrstagung der DPG, March 26-31, 2000, Regensburg, Germany
Verhandlungen der DPG 2000, p. 339
45)
Improved Sputter Depth Profiling of Wsix Layers
A.M. Goryachko, D. Krüger, R. Kurps
Frühjahrstagung der DPG, March 26-31, 2000, Regensburg, Germany
Verhandlungen der DPG, 2000, p. 77
44)
Ion Sputtering Assisted Auger Electron Spectroscopy Depth Profiling of TiN and its Interfaces with Ti, W, Co, Si, and SiO2
A. Goryachko, D. Krüger, R. Kurps, H. Schneider
IX Int. Workshop on Ion Beam Surface Diagnsostics, Zaporizhzhia (Ukraine), Oct. 3-7 2000
43)
Barrier Inhomogeneities of Metal/SiGeC Schottky Diodes
A. Hattab, M. Barthula, F. Meyer, H.-J. Osten, P. Warren
Workshop "Heterostructures de semiconducteurs IV-IV" June 2000, Orsay, France
42)
Distribution of Barrier Heights in W/Si1-x-yGexCy Schottky Diodes
A. Hattab, M. Barthula, F. Meyer, P. Warren, H.-J. Osten
3rd ICMM, Oct. 2000, Dublin, Ireland
41)
Latchup Immunity and Well Profile Design by a Deep Carbon-Doped Layer
B. Heinemann, R. Barth, D. Bolze, K.-E. Ehwald, D. Knoll, D. Krüger, R. Kurps, H. Rücker, P. Schley, B. Tillack, D. Wolansky
IEDM 2000, Dec. 11-13, 2000, San Francisco, USA
40)
A New Approach to Fully Integrated CMOS LC-Oscillators with a Very Large Tuning Range
F. Herzel, H. Erzgräber, N. Ilkov
CICC 2000, May 2000
39)
Enhancement of Gettering Efficiencies of Different Silicon Substrates During a 0.18 µm LTB CMOS Process Simulation - Stratigraphy by a Novel Chemical Ultra-Trace Depth-Profiling
R. Hoelz, K.-J. Range, L. Fabry, R. Wahlich, G. Kissinger
E-MRS Spring Meeting, Symp. on Sub-Quarter-Micron Silicon Issues in the 200/300 mm Conversion, Strasbourg, May30-June-2, 2000, France
38)
An Accurate, Experimentally Verified Electron Minority Carrier Mobility Model for Si and SiGe
C. Jungemann, B. Heinemann, K. Tittelbach-Helmrich, B. Meinerzhagen
IEDM 2000, Dez. 11-13, 2000, San Francisco, USA
37)
Hydrogen Passivation of Multicrystalline Si: Cross-Sectional EBIC Investigation on Depth Extensions and Influence of the Initial Defect Activity
M. Kittler, O. Krüger, W. Seifert, O.F. Vyvenko
EDS 2000, Conf. on Extended Defects in Semiconductors , July 18-22, 2000, Sussex London, UK
36)
Inversionskanäle in RGS
M. Kittler, W. Seifert
KoSi-Zwischentreffen, 25.02.00, Zellingen-Retzbach, Germany
35)
Emitter of Single-Polysilicon SiGe:C HBTs with Highly Doped Base Layers
D. Knoll, B. Heinemann, K.-E. Ehwald, G.G. Fischer, B. Hunger
ESSDERC 2000, Sept.-11-13, Cork, Ireland
34)
Single Chip Lösung für Bandbreiteneffizientes Drahtloses Kommunikationssystem (CommChip)
R. Kraemer
BMBF Statusseminar, 20.-21.06.2000, Ulm, Germany
33)
System on Chip Design - Aktivitäten des IHP
R. Kraemer
BMBF Hypernet/Mobicom Statusseminar, 21.02.2000, Ulm, Germany
32)
Single Chip Wireless Engines
R. Kraemer
Sixth Workshop on Frontiers in Distributed Information Systems (FDIS'00), June 4th - 6th, 2000, Aspen, USA
31)
Influence of Fluorine Contamination on Intrinsic Reliability of Thin Gate Oxides
D. Krüger, P. Gaworzewski, R. Kurps, K. Pomplun
11th European Symposium on Reliability of Electron Devices, ESREF 2000, Dresden, 2.-6.10.2000
30)
Interfacekontaminationen und Restschichten am Beispiel einer 0.25µm CMOS (DRAM) Technologie
D. Krüger
Regionaler Workshop "Fehleranalyse in siliziumbasierten Technologien", 12.04.00, Frankfurt(Oder), Germany
29)
SIMS Analysis of Dopant Diffusion in C-Doped Si and SiGe
D. Krüger, R. Kurps, H. Rücker, B. Heinemann
SIMS Europe 2000, 17.-20.09., 2000, Münster, Germany
28)
MBE Growth of Binary Epitaxial Metal Oxides on Silicon: The Example of Praseodymium Oxide
J.P. Liu, H.-J. Osten, E. Bugiel, P. Zaumseil
XI. MBE World Conf., 10.-15.09.00, Beijing, China
27)
A Low-Power 64-point FFT/IFFT Architecture for Wireless Broadband Communication
K. Maharatna, E. Grass, U. Jagdhold
5th OFDM Workshop, 12.-13.09, 2000, Hamburg, Germany
26)
A Low-Power 64-point FFT/IFFT Architecture for Wireless Broadband Communication
K. Maharatna, E. Grass, U. Jagdhold
MOMUC 2000, Waseda, Oct. 23-26, 2000, Tokyo, Japan
25)
Theoretical Study of the Effect of Substitutional and Interstitial Defects on the Elastic Constants of Intermetallics
B. Mayer, H. Anton, M. Methfessel, J. Sticht, J. Harris, P.C. Schmidt
5th Int., Conf. on Structural and Functional Intermetallics, July 16-20, 2000, Vancouver, Canada
24)
Can Si(113) Wafers be an Alternative to Si(001)
H.-J. Müssig, J. Dabrowski, K.-E. Ehwald, P. Gaworzewski, A. Huber, U. Lambert
Int. Conf. on Electronic Materials & E-MRS Spring Meeting, 30.05.-02.06.00, Strasbourg, France
23)
Electron Holographic Determination of 2D Dopant Redistribution in SiGe HBT Technology
A. Orchowski, W.-D. Rau, P. Schwander, A. Ourmazd
MRS Spring Meeting 2000, April 24-28, 2000
22)
High-k Gate Dielectrics with Ultra-Low Leakage Current Based on Praseodymium Oxide
H.-J. Osten, J.P. Liu, P. Gaworzewski, E. Bugiel, P. Zaumseil
IEDM 2000, Dec. 11-13, 2000, San Francisco, USA
21)
Wider Latitude for Sophisticated Devices by Incorporating Carbon into Crystalline Si or SiGe
H.-J. Osten, H. Rücker, J.P. Liu, B. Heinemann
E-MRS Meeting, 30.5.-02.06.00, Strasbourg, France
20)
Supersaturated Carbon in Si and SiGe : A Status Report
H.-J. Osten, J.P. Liu, D. Knoll, H. Rücker
XI. International Conference on Molecular Beam Epitaxy, Sept. 2000, Beijing, China
19)
Epitaxial, High-K Dielectrics on Silicon: The Example of Praseodymium Oxide
H.-J. Osten, J.P. Liu, H.-J. Müssig, P. Zaumseil
11thb Workshop on Dielectrics in Microelectronics, Nov. 2000, Munich, Germany
18)
Carbon Doped SiGe Heterojunction Bipolar Transistor Module Suitable for Integration in a Deep Submicron CMOS Process
H.-J. Osten, D. Knoll, B. Heinemann, H. Rücker, K.-E. Ehwald
2000 Asia-Pacific Microwave Conference, Dec. 2000, Sydney, Australia
17)
Lumineszenz lokalisierter Exzitonen in SiGe-Volumenkristallen und Kristallhomogenität
K. Pressel, M. Franz, A. Barz, P. Dold, K.W. Benz
Frühjahrstagung der DPG 2000, March 26-31, 2000, Regensburg, Germany
Verhandlungen der DPG 2000, p. 532
16)
Oxidation von verspannten SiGeC-Schichten auf Si(100)-Substrat
K. Pressel, M. Franz, A. Cuardas, B. Garido, C. Bonafos, J.R. Morante, L. Fonseca
Frühjahrstagung der DPG, March 26-31, 2000, Regensburg, Germany
Verhandlungen der DPG, 2000, p. 508
15)
UV-Mikro-Ramanspektroskopie zur Messung mechanischer Verspannungen in Siliziumbauelementestrukturen
K. Pressel , K.F. Dombrowski, B. Dietrich, I. de Wolf, R. Rooyackers
Frühjahrstagung der DPG, March 26-31, 2000, Regensburg, Germany
Verhandlungen der DPG, 2000, p. 544
14)
A New Chemistry for Plasma Etching of Antireflective Coatings
H.H. Richter, A. Wolff, S. Dietrich, H. Silz, R. Barth, I. Jürgensen, M. Stegemann, S. Wege
DPG-Frühjahrstagung des Fachbereiches Plasmaphysik, April 3rd-7th, 2000, Bonn, Germany
Verhandlungen der DPG, Bd. 5/2000, p. 1027
13)
Dry Etching of Antireflective Coatings in Sub-quarter Micron Technologies
H.H. Richter, A. Wolff, S. Dietrich, H. Silz, R. Barth, I. Jürgensen, M. Stegemann, S. Wege
XIII. Int. Conf. on Gas Discharges and their Applications, Sept. 3-8, 2000, Glasgow, UK
12)
11 GHz SiGe Circuits for Ultra Wideband Radar
M. Roßberg, J. Sachs, P. Rauschenbach, P. Peyerl, K. Pressel, W. Winkler, D. Knoll
BCTM 2000, 24.-26.09.00, Minneapolis, Minnesota, USA
11)
Probing Point Defects in Silicon by Diffusion of Supersaturated Carbon
H. Rücker, B. Heinemann, R. Kurps, D. Krüger, H.-J. Osten
MRS Spring Meeting, April 24-28, 2000, San Francisco, USA
10)
Outdiffusion of Supersaturated Carbon as a Probe of Point Defects in Silicon
H. Rücker, B. Heinemann, R. Kurps, D. Krüger, H.-J. Osten
ChiPPS 2000, May 15-18, 2000, Wandlitz, Germany
9)
Modeling the Influence of Dislocations on Minority-carrier Diffusion Length in Si as Function of Dislocation Contamination
W. Seifert, M. Kittler
BIAMS 2000, Beam Injection Assessment of Microstructure in Semiconductors, Nov. 12-16, 2000, Fukuoka, Japan
8)
Untersuchungen zum Sammlungsverhalten an RGS-Zellen und zur Bestimmbarkeit einer gemittelten Defektaktivität/Kontamination aus integralen Messungen der Diffusionslänge
W. Seifert, M. Kittler
KoSi-Arbeitstreffen, 28.-31.05.00, Zellingen-Retzbach, Germany
7)
Über Möglichkeiten der Charakterisierung von mc-Si durch SiPHER
W. Seifert, O. Krüger, M. Kittler, V. Higgs
Freiberger Forschungsforum Kolloquium 2 'Halbleiter-Materialien, Prozeßtechnologie und Diagnostik', 15.-16.06.00
6)
Determination of the Recombination Lifetime in the Space Charge Region of MOS Field Induced PN-Junctions
R. Sorge, B. Heinemann, H. Richter, J. Grabmeier, G. Obermeier
ESSDERC 2000, Sept. 11.-13, .2000, Cork, Ireland
5)
Thin Solid Films Formation of CoSi2 on Si1-yCy Substrate Layers
S. Teichert, M. Falke, H. Giesler, D. Sakkar, G. Beddies, H.J. Hinneberg, G. Lippert, J. Griesche, H.-J. Osten
European Workshop Materials for Advanced Metallization, March 2000, Oostende, Belgium
4)
Simulation Aspects of an OFDM-based Physical Layer of Wireless Broadband Network
A. Troya, G. Lippert, B. Stantchev
5th Int. OFDM-Workshop, Sept. 12-13, 2000, Hamburg, Germany
3)
Depth Profiling of the Recombination Activity of Defects Measured by Temperature-dependent Cross-sectional EBIC
O. Vyvenko, O. Krüger, M. Kittler
BIAMS 2000, Beam Injection Assessment of Microstructure in Semiconductors, Nov. 12-16, 2000, Fukuoka, Japan
2)
Active Substrate Noise Suppression in Mixed-Signal Circuits Using On-Chip Driven Guard Rings
W. Winkler, F. Herzel
CICC 2000, May 21-24, 2000
1)
Inline Characterization of SiGe Structures on 8 Inch Si Wafers Using the Bede QC200 X-Ray-Diffractometer
P. Zaumseil, T.A. Lafford, M. Taylor
X-Top '2000, 13.-15.09.00, Ustron, Poland
Reports
13)
Mechanische Spannungen in 300-mm-Scheiben bei thermischen Prozessen
A. Fischer, H. Richter
Bericht zum Stand der Arbeiten Teilaufgabe 4 Wacker Siltronic
12)
Mechanische Spannungen in 300 mm Scheiben bei thermischen Prozessen - Teil II,
A. Fischer, H. Richter
Abschlussbericht zur Teilaufgabe M4 des Vertrages zwischen WSAG und IHP, 18.12.00
11)
Influence of Nitrogen Doping on the Formation of Grown-In Oxide Precipitate Nuclei in 300 mm CZ Silicon
A. Fischer, G. Kissinger
Zwischenbericht zur Teilaufgabe 3 - Wacker Siltronic
10)
Influence of Nitrogen Doping on the Formation of Grow-in Oxide Precipitate Nuclei in 300 mm CZ Si
A. Fischer, G. Kissinger
Abschlussbericht zur Teilaufgabe M3 des Vertrages zwischen WSAG und IHP, 18.12.00
9)
Failure Analysis on Trench SOI Wafers: Z-Diodes with Increased Leakage Current
G. Kissinger
Forschungsbericht für Alpha-Microelectronics
8)
Failure Analysis on Standard Test Wafers from SOI Lots
G. Kissinger
Forschungsbericht für Alpha-Microelectronics
7)
Construction Analysis CDR3 Technology
D. Krüger, E. Bugiel, R. Kurps
IHP-Report
6)
Adsorption und Epitaxie auf Si(113)
H.-J. Müssig
Abschlussbericht zum DGF-Projekt
5)
Technologien für gemischte-SiGe-HBT-CMOS-Schaltungen
H.-J. Osten
4. Zwischenbericht LOTUS: Fördervorhaben 01 M 2419 F
4)
Technologien für gemischte SiGe-HBT-CMOS-Schaltungen
H.-J. Osten
5. Zwischenbericht Lotus II, Si/SiGe-HBT-NT-Technologien für schnelle analoge und digitale Schaltkreise - Zeitraum 01.01.00-31.06.00, Fördervorhaben 01 M 2419 F
3)
Modifizierung des implantationsinduzierten Diffusionsverhaltens
B.N. Romanjuk, D. Krüger
Erfolgskontrollbericht Projekt 01 M 2976,
Technical Report Transform-Projekt mit ISP Kiev: 1997 - 1999
2)
Diffusion von Dotierstoffen in kohlenstoffreichem Silizium
H. Rücker
Abschlußbericht und Fortsetzungsantrag für DFG-Projekt
1)
Multikristalline Siliciummaterialien für effiziente Solarzellen: Erarbeitung von Handlungsstrategien...
W. Schröter, M. Kittler
Abschlußbericht zum Verbundprojekt, April 2000, Förderkennzeichen 0329743 A, B, C, D
Books
5)
ChIPPS 2000, 2nd International Meeting Challanges in Predictive Process Simulation
May 14-18, 2000, Wandlitz, Germany
Ed. J. Dabrowski , H.-J. Müssig
Abstracts
4)
Micro-Raman Investigation of Mechanical Stress in Si Device Structures and Phonons in SiGe
K.F. Dombrowski
Dissertation
3)
Gestaltung konfigurierbarer Codegeneratoren für die automatische Erzeugung effizienter Protokollimplementierungen
P. Langendörfer
Dissertation, BTU Cottbus
2)
Querschnitts-Raster-Tunnel-Mikroskopie an Silizium-Spaltflächen
R. Nuffer
Dissertation
1)
Implantationsfreie Dotierung des Basisanschlusses von Si/SiGe-Heterobipolartransistoren in Einfach-Polysilizium-Technologie mittels BBr3-Vorbelegung
H. Schmundt
Dissertation, BTU Cottbus
Patents
18)
Verfahren zur Datenübertragung
K. David, R. Kraemer
internationale Patentanmeldung am 12.05.2000, IHP.181.PCT,
Anm-AZ: PCT/DE00/01555
17)
CMOS kompatibler lateraler DMOS Transistor
K.-E. Ehwald, D. Knoll, B. Heinemann, W. Winkler
Patentanmeldung am 31.03.2000, IHP.174.00, Anm.AZ: 100 04 387.9
16)
CMOS kompatibler lateraler DMOS Transistor
K.-E. Ehwald, D. Knoll, B. Heinemann, W. Winkler
Patentanmeldung am , IHP.183.00, Anm.AZ:
Zusatzanmeldung zu IHP.174.00
15)
Verfahren und Vorrichtungssystem zur Datenübertragung
E. Grass, H. Frankenfeldt
Patentanmeldung am 13.07.2000,. IHP.179.00, Anm.-AZ: 100 34 977.3
14)
Bipolartransistor und Verfahren zu seiner Herstellung
B. Heinemann, D. Knoll
Patentanmeldung am 11.01.00, IHP.125.98, Anm-AZ: 100 00 645.0
13)
Verfahren zur Herstellung von Substratscheiben für CMOS und BiCMOS-Technologien
B. Heinemann
Patentanmeldung Dez. 2000, IHP.186.00, Anm-AZ: 100 61 191.5
12)
Oszillator mit veränderbarer Induktivität
F. Herzel
Patentanmeldung am 26.04.2000, IHP.182.00, Anm.-AZ: 100 21 273.5
11)
Oszillator mit veränderbarer Induktivität
F. Herzel
internationale Patentanmeldung am 26.04.2000, IHP.184.PCT,
Anm.-AZ: PCT/DE00/01385
10)
Verfahren zur Herstellung von schnellen vertikalen npn-Bipolartransistoren und komplementären MOS-Transistoren auf einem Chip
D. Knoll
Patentanmeldung Dez. 2000, IHP.190.00, Anm-AZ: 100 61 199.0
9)
Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung
D. Krüger, T. Morgenstern, K.-E. Ehwald, E. Bugiel, B. Heinemann, D. Knoll, B. Tillack
Patentanmeldung am 28.07.2000, IHP.185.PCT, Anm.-AZ: PCT/DE00/02491
8)
Tunneldiode und Verfahren zu ihrer Herstellung
G. Lippert, B. Heinemann, H.-J. Osten , H. Rücker, P. Weger
Patentanmeldung, am 19.01.2000, IHP.166.99, Anm.AZ: 100 03 951.0
7)
Verfahren und Schaltungsanordnung zur Durchführung einer Fast Fourier Transformation sowie Anwendung derselben
K. Maharatna, E. Grass, U. Jagdhold
Patentanmeldung IHP.189.00, Anm.-AZ: 100 62 759.5
6)
Drahtloses Kommunikationssystem mit vorgeschaltetem Aufwecksystem
M. Methfessel, H. Frankenfeldt, I. Matthaei, R. Kraemer
Patentanmeldung IHP.176.00 Anm.A-Z: 100 44 035.5
5)
Verfahren zur Herstellung dünner gleichförmiger Oxidschichten auf Silizium-Oberflächen
H.-J. Müssig, J. Dabrowski
internationale Patentanmeldung am 11.03.2000, IHP:178.PCT,
Anm.-AZ: PCT/DE00/00799
4)
Elektronisches Bauelement und Herstellungsverfahren für ein elektronisches Bauelement (Praseodymiumoxid)
H.-J. Osten
Patentanmeldung am 03.08.00, IB1012, Anm.-AZ: : 100 39 327.6
3)
Schichtstapel für pnp-Heterobipolar-Transistor
H.-J. Osten
Patentanmeldung am 04.02.00, IHP.119.98, Anm-AZ: 100 05 405.6
2)
Statischer Frequenzteiler mit umschaltbarem Teilerverhältnis
M. Pierschel, H. Gustat
Patentanmeldung am 18.03.00, IHP.173.00, Anm.-AZ 100 13 633.8
1)
Verfahren und Vorrichtungen zur Herstellung diffusionshemmender epitaktischer Halbleiterschichten
B. Tillack, G. Ritter, D. Wolansky, T. Grabolla
Patentanmeldung am 05.07.00, IHP.150.99, Anm.-AZ 100 33 940.9
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