Overview >> DRAM - High-k dielectrics for future DRAM cell technologies
| The Objective | Since the 4-Mbit DRAM generation, a sufficient amount of storage charge has been realized by fabricating three-dimensional (3D) memory cell concepts. Future Gbit deep-trench DRAM generations will require the integration of advanced dielectrics of high dielectric constant (k) and extremely low leakage current levels. more |
| IHP’s Contribution | Development of Praseodymium- and Hafnium-based high-k dielectric films for future deep-trench DRAM generations. |
| Funding | This so-called MEGAEPOS project is funded by BMBF. |
| Project Partners | Qimonda Dresden, PDI Berlin, TU Darmstadt, LU Hannover, AMD Dresden, AMO Aachen, NaMLab gGmbH Dresden, W. C. Heraeus GmbH Hanau |
| Interesting Links | www.megaepos.de; www.qimonda.com; www.samsung.com; www.minatec.com |