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Emerging Devices & Technologies

Fields

  • Si-based process technologies for RF, THz, and optoelectronic applications
  • High-speed SiGe heterojunction bipolar transistors (HBT)
  • BiCMOS integration
  • Integration of optical components in SiGe BiCMOS

 

Focus

A major focus of the process integration group is the development of high-speed SiGe BiCMOS technologies. These activities reach from basic device research to qualification of fabrication processes according to industry standards. Current research activities are directed towards SiGe HBTs with maximum oscillation frequencies of 0.7 THz.

A further research area is the development of technologies for high-speed electronic-photonic integrated circuit. This includes the integration of optical functions such as waveguides, photo diodes, and electro-optical modulators in SiGe BiCMOS technologies.

 

Main Achievements

Several generations of high-speed SiGe heterojunction bipolar transistors (HBT) have been developed and integrated in 0.25 µm and 0.13 µm BiCMOS technologies which are available for chip fabrication via IHP’s MPW and prototyping service. The 0.13 µm BiCMOS process SG13G2 represents the fastest currently available SiGe HBT technology featuring peak fT/fmax values of 300 GHz/500 GHz. These developments were based on a series of pioneering contributions to the development of SiGe HBTs including the introduction of carbon doping for stabilizing steep base doping profiles and new device constructions with reduced parasitic resistances and capacitance.

TEM cross section of high-speed SiGe:C HBT

TEM cross section of high-speed SiGe:C HBT
Contact

Dr. Holger Rücker

 

IHP

Im Technologiepark 25

15236 Frankfurt (Oder)

Germany

Phone: +49 335 5625 514

Projects

DOTSEVEN

Development of SiGe HBTs with maximum oscillation frequencies (fmax) of 0.7 THz

Fundamental challenges and potential solutions for THz SiGeC heterojunction bipolar transistors

DFG project addressing fundamental performance limits of SiGe HBTs

RF2THzSiSoC

From RF to MM-Wave and THz Silicon SOC Technologies

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.