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Seminars 2012

 

24. Strained Ge/SiGe Heterostructures for Silicon-Based Emitters and 
      Amplifiers of Radiation in the Terahertz Range
      Dr. Michele Ortolani, Institute for Photonics and Nanotechnologies CNR-IFN
      Rome, Italy, 10.12.2012

 

23. Low Dimensional Electron Gases at Ssurfaces: Transport Properties
      and Collective Excitations
      Prof. Christoph Tegenkamp, Universität Hannover, Germany,  
      05.11.2012

 

22. Silicon Integrated Optoelectronics:  A Transition from Ddevices to 
       Systems
       Dr. Michael Hochberg, University of Delaware, USA, 10.10.2012

  

21. Band Structure Eengineering of Ge-rich SiGe Nanostructures for 
       Photonics Applications
       Prof. Michele Virgilio, Università degli Studi di Pisa, Italy, 05.10.2012

 

20. Switched-Capacitor Power Converters: Basics, Overview and Current
      State

      Prof. Dr.-Ing. Josif Kjosev, Faculty of Electrical Engineering and Information
      Technologies – Skopje, Macedonia, 02.10.2012 

 

19. IR-Thermographie mit mikroskopischer Orts- und hoher Zeitauflösung
      
Prof. Dr. Klaus-Peter Möllmann, FH Brandenburg, Germany, 11.09.2012

 

18. Silicon Photonics Technology for Diagnostics and Biological Research
      Dr. Cary Gunn, Genalyte / USA, 09.08.2012

 

17. Recent Development in Electrostatic Discharge (ESD) Protection of RF
      Integrated Circuits

      Prof. Juin J. Liou, Pegasus Distinguished Professor, University of  
      Central Florida, USA, 09.08.2012 

 

16. Functional Organization of Proteins into Micropatterns

      Jacob Piehler, Division of Biophysics, University of Osnabrueck, Germany,
      19.06.2012

 

15. Pulsed UV-laser Processing of Amorphous and Crystalline Group
      IV Semiconductors
      
      Dr. Stefano Chiussi, University Vigo, Spain, 18.06.2012

  

14. State-of-the-art GaN based Heterostructures Grown by MBE
       Stefan Schmult, TU Dresden, IHM, Nanoelectronics Materials,
       Germany, 07.05.2012

 

13. A Molecular Route to Carbon Nanomembranes and Graphene for
       Functional Applications
      
Andrey Turchanin, Physik supramolekularer Systeme und Oberflächen,
       Fakultät für Physik, Universität Bielefeld Bielefeld Institute of Biophysics
       and Nanoscience (BINAS), 20.04.2012

  

12. Monocrystalline Silicon Microwave MEMS Devices at KTH Royal
       Insitute of Technology, Stockholm
     

       Prof. Joachim Oberhammer, Stockholm, Sweden, 18.04.2012

 

11. Novel X-ray Diffraction Schemes for the Investigation of Nanoparticles
       under Reaction Conditions
       Prof. Andreas Stierle, DESY and University of Hamburg,
       Germany 17.04.2012 

 

10. Light-Matter Interaction in a Microcavity-Controlled Graphene

       transistor

       Michael Engel, Institute of Nanotechnology,Karlsruhe Institute of

       Technology, Karlsruhe, Germany, 04.04.2012

 

09. Nanoscale Analysis of Eelectroforming and Switching in Resistive

      Switching SrTiO3 Devices  

      Dr. R. Dittmann, FZ Jülich, Germany, 21.03.2012 

 

08. ReRAM – a Case Study of Wishful Thinking and Pitfalls      

       Prof. R. Waser, FZ Jülich, Germany, 21.03.2012 

  

07. Strained Si(Ge) Channels and Epitaxial Silicides for High
       Mobility QW- MOSFETs

       D. Buca, Peter Grünberg Institute 9 (PGI 9 -IT) and JARA-FIT,
       Forschungszentrum Jülich, Germany, 09.03.2012
 

06. Cognitive Sensorimotor Loops

       Dr. Manfred Hild, Humboldt-Universität zu Berlin, Germany,  07.03.2012 

 

05. Cerium Oxide on Metal and Semiconductor Surfaces

       Jan-Ingo Flege, Universität Bremen, Germany, 21.02.2012 

 

04. (HR)TEM and Electron Holography of Semiconductor Nanophotonic
       Devices
       Michael Lehmann, Institut für Optik und Atomare Physik, Technische
       Universität Berlin, Germany, 17.02.2012

  

03. Local Compressibility Measurements of Correlated States in Suspended
      Bilayer Graphene

      Dr. Jens Martin, School of Physics, Exeter University, UK, 23.01.2012
   
02. Raman Spectroscopy of Graphene

      Prof. Janina Maultzsch, TU Berlin, Germany, 12.01.2012

 

01. Microscopic Simulation of Noise in SiGe HBTs

      Prof. Christoph Jungemann, Institut für Theoretische Elektrotechnik RWTH  
      Aachen, Germany, 09.01.2012

 

 

 

 

 

 

 

The building and the infrastructure of the IHP were funded by the European Regional Development Fund of the European Union, funds of the Federal Government and also funds of the Federal State of Brandenburg.