Flexible Graphene-Base Heterojunction Transistor for Several Hundred Gigahertz Operation Frequency
To increase today’s transfer and processing rate of data, transistors, the main building block of computation, have to operate at very high frequencies, ideally of several hundred gigahertz. Along with this, the increasing interest in the so-called Internet-of-things (IoT) demand the use of flexible electronics to further increase its reach. These requirements call to explore new materials, innovative combinations and architectures to open the path into flexible electronics operating at high frequencies.
High transit time at the base electrode is a limiting factor in increasing the operation frequency of bipolar transistors. Graphene, a 2D material, is an extremely thin material with high electron mobility, which can potentially reduce the transit time due to its thinness. Furthermore, graphene has the capability to withstand mechanical deformations, facilitating its possible use in flexible electronics.
The aim of this DFG project is to explore the use of graphene as the base electrode in flexible bipolar transistor architectures. To this end, hydrogenated amorphous silicon (a-Si:H), a material already used in flexible electronics, produces an electronic barrier with graphene which is highly dependent of the voltage and polarity applied. IHP together with Dresden University of Technology, and their expertise in the deposition and control of the electronic properties of a-Si:H, investigates the use of both materials for the fabrication of flexible high frequency transistors.
The project is funded by the German Research Foundation (DFG) in the framework of the Priority Program SPP 1796 FFlexcom
- Dresden University of Technology