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Fully-Integrated 60 GHz Transceiver in SiGe BiCMOS, RF Modules, and 3.6 Gbit/s OFDM Data Transmission

Srdjan Glisic, J. Christoph Scheytt, Yaoming Sun, Frank Herzel, Ruoyu Wang, Klaus Schmalz, Mohamed Elkhouly, Chang-Soon Choi

The paper is submitted to the EuMA special issue on 60GHz communications.

Abstract: A fully integrated transmitter and receiver front-end chipset, produced in 0.25 μm SiGe:C BiCMOS technology, is presented. The Front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The transmitter and receiver features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz I/Q mixer, an IF amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter and a power amplifier. The RX features a low-noise amplifier, a 60 GHz mixer, a phase-locked loop and an IF demodulator. The measured 1–dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The low-noise amplifier has measured noise figure of 6.5 dB at 60 GHz. Error–free data transmission with a 16QAM OFDM signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.


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