[3]

Designs of 60 GHz Front-Ends in SiGe BiCMOS Technology

Yaoming Sun and Srdjan Glisic

Publication for Asian Pacific Microwave Conference

Abstract: This paper reports a newly fabricated 60 GHz front-end (FE) in a 0.25 um SiGe BiCMOS technology. The TX and RX FE chips have been mounted onto application boards through wire-bonding. Maximum error-free transmission is 5 meter in a typical indoor environment with an OFDM modulation. A differential Colpitts VCO has been designed to improve the phase noise performance. Its tuning range is from 55 to 57.9 GHz. The measured phase noise is 100.5 dBc/Hz at 1 MHz offset.

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Publications Publications, alphabetical order Publications 2008 Publications 2009 Publications 2010 Publications 2011 ICC 2009 PR 01/2009 Final Presentation	[3] Designs of 60 GHz Front-Ends in SiGe BiCMOS Technology Yaoming Sun and Srdjan Glisic Publication for Asian Pacific Microwave Conference Abstract: This paper reports a newly fabricated 60 GHz front-end (FE) in a 0.25 um SiGe BiCMOS technology. The TX and RX FE chips have been mounted onto application boards through wire-bonding. Maximum error-free transmission is 5 meter in a typical indoor environment with an OFDM modulation. A differential Colpitts VCO has been designed to improve the phase noise performance. Its tuning range is from 55 to 57.9 GHz. The measured phase noise is 100.5 dBc/Hz at 1 MHz offset.