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RF Characterization: S-Parameter, RF Noise, Load Pull

Objective

  • S-Parameter determination for ultra-fast HBT devices with fMAX  > 500GHz
  • On wafer RF noise parameter characterization
  • Load Pull measurements for evaluation of large signal RF performance of power amplifiers, mixers  etc.

Methods

  • Two port S parameter measurement:  110-170 GHz (300K - 358K)/1-110 GHz ( 300K - 358K)/
    0.1 - 67 GHz ( 233K - 398K )/0.1 - 50 GHz ( 300K - 358K)
  • Four port S-parameter measurement (or true differential two port):  + 0.1 - 50 GHz
  • Active Load Pull Technique: Harmonic Loadpull, Harmonic Sourcepull, Measurement Modes: CW & Pulsed Mode, I(V)-Characterization up to 1A

      Equipment

      • S Parameter:  Agilent Network Analyzer:  E7350A, E8364A, 8720ES, E8361A,
      • RF Noise: Noise source N4002A  @ 2-26.5GHz ( Temp. 300K - 358K),
      • Load Pull: High Frequency Engineering Active Load Pull Measurement System (HFE), Two Active Loops: 4 - 18 GHz (Fundamental or Harmonic), On-Wafer (or Fixture),  Components limited to PMAX < 5 W, prevented from loop oscillations by loop Filters
          Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.