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Fastest Si-based transistor in the world

The cross section on the left shows a silicon-germanium heterobipolar transistor (SiGe HBT) of the latest generation, recorded by a transmission electron microscope (TEM). The measurement curves on the right are used to determine the transit frequency, fT, and the maximum oscillation frequency, fmax. © IHP 2016

The cross section on the left shows a silicon-germanium heterobipolar transistor (SiGe HBT) of the latest generation, recorded by a transmission electron microscope (TEM). The measurement curves on the right are used to determine the transit frequency, fT, and the maximum oscillation frequency, fmax. © IHP

07.12.2016
IHP presents the fastest silicon-based transistor in the world. Contribution at the renowned semiconductors conference IEDM in San Francisco.

Scientist Dr. Bernd Heinemann of IHP presented results on silicon-germanium heterobipolar transistors (SiGe HBTs) developed in Frankfurt (Oder) on the “International Electron Devices Meeting” (IEDM) in San Francisco. His contribution titled “SiGe HBT with fT/fmax of 505 GHz/720 GHz “ presents speed parameters that set new standards for silicon transistors. These research results form the conclusion of the EU-funded project DOTSEVEN which is a merger of IHP, Infineon and twelve other project partners.

 

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