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  • Publikationen 2016

Publikationen 2016

seit Januar 2016

(1) DAC-free Ultra-Low-Power Dual-Polarization 64-QAM Transmission with InP IQ Segmented MZM Module
A. Aimone, I. Garcia Lopez, S. Alreesh, P. Rito, T. Brast, V. Höhns, G. Fiol, M. Gruner, J.K. Fischer, J. Honecker, A.G. Steffan, D. Kissinger, A.C. Ulusoy, M. Schell
Proc. Optical Fiber Communication Conference and Exposition 2016, (2016)
(SASER)
We demonstrate for the first time 32 GBd 64-QAM signal generation without the usage
of DACs. The dual-polarization 64-QAM signal is transmitted error-free over 80 km of SSMF
with 7.8 pJ/bit record low energy consumption.

(2) A Dual 64 Gbaud, 10 KOhm, 5% THD Linear Differential Transimpedance Amplifier with Automatic Gain Control in 130 nm BiCMOS Technology for Optical Fiber Coherent Receivers
A. Awny, R. Nagulapalli, D. Micusik, J. Hoffmann, G. Fischer, D. Kissinger, A.C. Ulusoy
Proc. International Solid-State Circuits Conference (ISSCC 2016), 406 (2016)
The paper presents the first dual 64 Gbaud linear differential transimpedance amplifier with automatic gain control for long-haul coherent receivers. It achieves 10 KΩ differential transimpedance, 53 GHz 3-dB bandwidth, 12.43 pA/√Hz average input-noise current density, and 5% THD, while dissipating 277 mW/TIA of power. Integrated into a module with 90°optical hybrid and balanced photodiodes, the dual transimpedance amplifier chip demonstrates data transmission at a rate of 128 Gb/s.

(3) Industrial mmWave Radar Sensor in Embedded Wafer-Level BGA Packaging Technology
C. Beck, H.J. Ng, R. Agethen, M. PourMousavi, H.P. Forstner, M. Wojnowski, K. Pressel, R. Weigel, A. Hagelauer, D. Kissinger
IEEE Sensors Journal 16(17), 6566 (2016)
(HomiRadar)
We present highly integrated 60GHz radar transceivers for industrial sensor applications. The bistatic and monostatic transceivers are implemented in the SiGe bipolar technology and packaged using the embedded wafer-level ball grid array (eWLB) technology that allows for direct embedding of the antennas in the package redistribution layer. In this way, very compact and efficient radar frontends comprising all millimeter-wave components can be implemented in an 8 x 8 mm^2 package. These frontends were soldered on a standard low-cost PCB based on FR4 material. For verification of the proposed frontends, an FMCW radar system was developed and set up within this work. Theoretical considerations and simulations as well as corresponding measurements were carried out for the evaluation of the designed system. The demonstrator results of these embedded radar sensors show excellent system performance
at a high integration level.

(4) Technology Modules from Micro- and Nano-Electronics for the Life Sciences
M. Birkholz, A. Mai, Ch. Wenger, Ch. Meliani, R. Scholz
Wiley Interdisciplinary Reviews (WIREs). Nanomedicine & Nanobiotechnology 8, 355 (2016)
(Bioelectronics)
The capabilities of modern semiconductor manufacturing offer interesting possibilities to be applied in the life sciences as well as for their commercialization. In this review, the technology modules available in micro- and nano-electronics are exemplarily outlined for the case of 250 and 130 nm technology nodes. Their preparation procedures and the different transistor types as available in CMOS and BiCMOS technologies are introduced as the key elements of comprehensive chip architectures. Techniques for circuit design and the elements of fully integrated bioelectronics systems are presented. The possibility for external customers to make use of these technology modules for their research or development projects via so-called multi-project wafer services is emphasized. Various examples from diverse fields like (1) immobilization of biomolecules and cells on semiconductor surfaces, (2) biosensors operating by affinity principles, surface-acoustic waves, microring-resonators and dielectrophoresis, (3) complete systems for human body implants and monitors for bioreactors, and (4) the combination of microelectronics with microfluidics either by chip-in-plastic integration as well as Si-based microfluidic are demonstrated from common projects with partners from biotechnology and medicine.

(5) A Wideband Monolithically Integrated Photonic Receiver in 0.25-μm SiGe:C BiCMOS Technology
M.H. Eissa, A. Awny, G. Winzer, M. Kroh, St. Lischke, D. Knoll, L. Zimmermann, D. Kissinger, A.C. Ulusoy
Proc. European Solid-State Circuits Conference (ESSCIRC 2016), 487 (2016)
This work presents a 54 Gb/s monolithically integrated silicon photonics receiver (Rx). A germanium photodiode (Ge-PD) is monolithically integrated with a transimpedance amplifier (TIA) and low frequency feedback loop to compensate for the DC input overload current. Bandwidth enhancement techniques are used to extend the bandwidth compared to previously
published monolithically integrated receivers. Implemented in a 0.25 μm SiGe:C BiCMOS electronic/photonic integrated circuit (EPIC) technology, the Rx operates at  λ= 1.55 μm, achieves an optical/electrical (O/E) bandwidth of 47 GHz with only 5 ps group delay variation and a sensitivity of -2dBm for 4.5e-11BER at 40 Gb/s and -1.3dBm for 1.05e-6BER at 54 Gb/s. It dissipates 73mW of power, while occupying 1.6mm2 of area. To the best of the author’s knowledge, this work presents the state-of-the art bandwidth and bit rate in monolithically integrated photonic receivers.

(6) Low-Power Planar Complex Dielectric Sensor with DC Readout Circuit in a BiCMOS Technology
M.H. Eissa, F.I. Jamal, S. Guha, Ch. Meliani, D. Kissinger, J. Wessel
Proc. IEEE MTT-S International Microwave Symposium (IMS 2016), (2016)
(PlaqueCharM)
Sensing the dielectric constants real part (Ɛ’) and imaginary part (Ɛ’’) of a material under test (MUT) enhances the capability to differentiate between different materials. In this paper a low power dielectric sensor with two DC outputs, based on K-band sensing structure, is presented. The full solution is implemented in a standard 0.13 um SiGe:C BiCMOS technology.
Different concentrations of ethanol and methanol solutions were used to demonstrate the functionality of the proposed approach. The sensor showed a responsivity of 10 mV/Ɛ’ and 100 mV/Ɛ’’. The sensor can detect a variation of 0.15 of Ɛ’ and 0.002 of Ɛ’’ based on phase noise measurements and simulations. With the DC outputs and a total power consumption of 74mW the proposed sensor architecture is well suited for lab-on-chip systems.


(7) A 61 GHz Frequency Synthesizer in SiGe BiCMOS for 122 GHz FMCW Radar
A. Ergintav, Y. Sun, F. Herzel, H.J. Ng, G. Fischer, D. Kissinger
Proc. 11th Microwave Integrated Circuits Conference (EuMIC 2016), 325 (2016)
(Benchmarking Circuits/Radar Systems)
In this paper, a fractional-N phase-locked loop (PLL) with an integrated chirp generation circuit block for frequency-modulated continuous-wave (FMCW) radar systems is reported. The circuit is composed of a push-push voltage controlled oscillator (VCO), a feedback divider including pre-scaler and programmable divider stages, a phase-frequency detector followed by a current steering charge pump, a sigma-delta modulator (SDM) with an 18-bit resolution, a chirp generator and a serial-peripheral-interface (SPI) for programming the chirp generator. The circuit occupies an area of 2.6 mm2, consumes 310 mW from a 3.3 V voltage supply. In integer-N mode, the PLL phase noise is better than -95 dBc/Hz at 1 MHz offset from 60 GHz center frequency. The rms frequency error is 134 kHz when the chirp slope is 0.4 GHz / 1.28 ms. The circuit is fabricated in a 0.13 µm SiGe BiCMOS technology. It is well suited for sub-harmonic transceiver frontends of an FMCW radar system at 122GHz and offers full programmability in ramp type, ramp duration and ramp bandwidth.

(8) A 40 Gbps Micro-Ring Modulator Driver Implemented in a SiGe BiCMOS Technology
A. Fatemi, D. Kissinger, H. Klar, F. Gerfers
Proc. IEEE Compound Semiconductor Integrated Circuits Conference (CSICS), 1 (2016)

(9) Realization of a Sliding-Correlator-Based Continuous-Wave Pseudorandom Binary Phase-Coded Radar Operating in W-Band
R. Feger, H. Haderer, H.J. Ng, A. Stelzer
IEEE Transactions on Microwave Theory and Techniques 64(10), 3302 (2016)
(HomiRadar)
In this paper, we present a continuous-wave (CW) mm-wave radar, which is based on binary phase-coded pseudorandom signals. The receiving section is operated as a sliding correlator, which allows to greatly reduce the bandwidth required in the baseband blocks of the system. A certain class of pseudorandom sequences, with so-called almost perfect autocorrelation properties, is used as probing signal. This leads to a good dynamic range, even for short sequence lengths. The presented hardware is based on a SiGe front-end chip, which includes a frequency multiplier to generate a 79-GHz carrier from a fixed-frequency source operating at 4.39 GHz. A field-programmable gate array generates the binary sequences with a bit rate of 1 Gb/s. This sequence is modulated onto the W -band carrier by binary phase-shift keying modulators realized within the SiGe chip. In this way, a flexible prototype was realized that was used to perform different radar experiments ranging from static single-target scenarios to range-Doppler measurements with multiple targets. It could be shown that the realized pseudorandom radar achieves a range resolution of 15 cm and ranging standard deviations in the millimeter range. This is comparable to frequency-modulated CW measurements with a bandwidth of 2 GHz, which were carried out using the same hardware for comparison purposes.

(10) High-Speed Ultra-Low-Power Hybrid Optical Transmitter Module with InP IQ-SEMZM and BiCMOS Drivers with 4-bit Integrated DAC
I. Garcia Lopez, A. Aimone, P. Rito, S. Alreesh, T. Brast, V. Höhns, G. Fiol, M. Gruner, J.K. Fischer, J. Honecker, A.G. Steffan, M. Schell, A. Awny, A.C. Ulusoy, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 64(12), 4598 (2016)
(SPEED)
A hybrid optical transmitter module comprising a 15-segment InP in-phase/quadrature-phase segmented Mach–Zehnder modulator and two SiGe:C BiCMOS drivers featuring integrated 4-b digital-to-analog converter functionality is described. The drivers, fabricated in the 0.13-μm process of IHP, deliver a differential output voltage of 2.5 Vpp across all the 15 segments while dissipating less than 1 W of power each, at the maximum. Clear electrical eye diagrams up to
40-Gb/s from every output are reported. The module allows a wide range of modulation formats, among which up to eight-pulse amplitude modulation and polarization-divisionmultiplexed (PDM) 64-quadrature amplitude modulation (QAM) back-to-back error-free electro-optical transmission at a record speed of 32 GBd are demonstrated. The 32-GBd PDM 64-QAM signal was transmitted error-free over 80 km of standard singlemode fiber, featuring 7.8-pJ/b energy consumption. The devised hybrid arrangement proves the suitability of SiGe HBT drivers for achieving higher speeds over their CMOS counterparts, with comparable low power dissipation, for advanced optical transceivers.

(11) High-Speed Ultra-Low-Power Hybrid Optical Transmitter Module with InP IQ-SEMZM and BiCMOS Drivers with 4-bit Integrated DAC
I. Garcia Lopez, A. Aimone, P. Rito, S. Alreesh, T. Brast, V. Höhns, G. Fiol, M. Gruner, J.K. Fischer, J. Honecker, A.G. Steffan, M. Schell, A. Awny, A.C. Ulusoy, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 64(12), 4598 (2016)
(SASER)
A hybrid optical transmitter module comprising a 15-segment InP in-phase/quadrature-phase segmented Mach–Zehnder modulator and two SiGe:C BiCMOS drivers featuring integrated 4-b digital-to-analog converter functionality is described. The drivers, fabricated in the 0.13-μm process of IHP, deliver a differential output voltage of 2.5 Vpp across all the 15 segments while dissipating less than 1 W of power each, at the maximum. Clear electrical eye diagrams up to
40-Gb/s from every output are reported. The module allows a wide range of modulation formats, among which up to eight-pulse amplitude modulation and polarization-divisionmultiplexed (PDM) 64-quadrature amplitude modulation (QAM) back-to-back error-free electro-optical transmission at a record speed of 32 GBd are demonstrated. The 32-GBd PDM 64-QAM signal was transmitted error-free over 80 km of standard singlemode fiber, featuring 7.8-pJ/b energy consumption. The devised hybrid arrangement proves the suitability of SiGe HBT drivers for achieving higher speeds over their CMOS counterparts, with comparable low power dissipation, for advanced optical transceivers.

(12) A 40 Gbaud SiGe:C BiCMOS Driver for InP Segmented MZMs with Integrated DAC Functionality for PAM-16 Generation
I. Garcia Lopez, P. Rito, L. Zimmermann, D. Kissinger, A.C. Ulusoy
Proc. IEEE MTT-S International Microwave Symposium (IMS 2016), (2016)
(SASER)
This paper outlines the design and electrical characterization of an optical modulator driver fabricated in a 0.13 µm BiCMOS SiGe:C technology. The prototype, optimized for hybrid assembly with a 15-segment InP segmented Mach Zehnder modulator (SE-MZM), displays integrated 4-bit digital to-analog converter (DAC) functionality, allowing the generation of PAM-16 modulation format. The driver delivers a differential output swing of 2.5 Vpp across all 15 segments, dissipating less than 1 W of power. Electrical eye diagrams up to 40 Gb/s are reported, demonstrating the capability for high speed 4 x 40 Gb/s electro-optical transmission. The devised hybrid solution proves the potential of SiGe HBT drivers for achieving higher speeds with comparable power dissipation as the CMOS counterparts.

(13) High Speed BiCMOS Linear Driver Core for Segmented InP Mach-Zehnder Modulators
I. Garcia Lopez, P. Rito, D. Micusik, A. Aimone, T. Brast, M. Gruner, G. Fiol, A. Steffan, J. Borngräber, L. Zimmermann, D. Kissinger, A.C. Ulusoy
Analog Integrated Circuits and Signal Processing 87(2), 105 (2016)
(SASER)
A hybrid arrangement for an optical transmitter sub-system comprising a linear driver fabricated in IHP SiGe 0.13 lm BiCMOS technology with an InP segmented Mach-Zehnder modulator is described. The proposed scheme, with direct interface to the digital to analog converter,
is suitable for coherent high order modulation formats intended for data transmission over optical fiber at a wavelength of 1550 nm. In this paper, a partial prototype, consisting of a single driver core and modulator segment is demonstrated. The driver core features an output differential
voltage of 2.5 Vpp, a gain of 9 dB and a 3 dB bandwidth of 32 GHz. Linearity is evaluated through total harmonic distortion measurements. With on–off-keying modulation, electro-optical eye diagram measurements of the single segment demonstrate successful operation up to
40 Gb/s data rate. While exhibiting clear capability for high speed operation, these results serve also to explore the boundaries of the proposed hybrid configuration.

(14) A 50 Gb/s TIA in 0.25μm SiGe:C BiCMOS in Folded Cascode Architecture with pnp HBTs
I. Garcia Lopez, P. Rito, A. Awny, B. Heinemann, D. Kissinger, A.C. Ulusoy
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016), 9 (2016)

(15) A Versatile 10–80-Gb/s PRBS-Based Broadband Transmitter With Arbitrary 20–60-GHz Spectrum Shifting
A. Gharib, R. Weigel, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 64(11), 3654 (2016)
A versatile pseudorandom bit sequence (PRBS)-based transmitter with the ability to mix the generated PRBS spectrum to arbitrary frequencies is presented. It incorporates a 211−1 80-Gb/s PRBS generator, employing parallel architecture. The generator is optimized to provide a high bit rate as well as a long sequence length for low power consumption
without any need of inductive peaking, compared with the PRBS generators reported in the literature. The PRBS generator is capable of generating bit rates ranging from 10 up to 80 Gb/s. The transmitter can shift the generated PRBS spectrum to arbitrary frequencies ranging from 20 to 60 GHz via a broadband mixer of a double sideband output spectrum of 80-GHz bandwidth.
A radar is realized using the presented transmitter, where a
range resolution of 7.5 mm could be achieved. The transmitter
consumes power ranging from 576 mW to 1 W, depending on the
output bit rate of the integrated PRBS generator. The proposed
circuit was manufactured in an 0.35-μm SiGe technology with
an ft of 200 GHz.

(16) A 180 GHz Frequency Multiplier in a 130nm SiGe BiCMOS Technology
T. Girg, C. Beck, M. Dietz, A. Hagelauer, D. Kissinger, R. Weigel
Proc. IEEE International New Circuits and Systems Conference (NEWCAS 2016), (2016)

(17) SiGe HBT with fT/fmax of 505 GHz/720 GHz
B. Heinemann, H. Rücker, R. Barth, F. Bärwolf, J. Drews, G.G. Fischer, A. Fox, O. Fursenko, T. Grabolla, F. Herzel, J. Katzer, J. Korn, A. Krüger, P. Kulse, T. Lenke, M. Lisker, St. Marschmeyer, A. Scheit, D. Schmidt, J. Schmidt, M.A. Schubert, A. Trusch, Ch. Wipf, D. Wolansky
Proc. IEEE International Electron Devices Meeting (IEDM 2016), 16-51 (2016)

(18) A Fully Integrated Low-Power K-Band Chem-Bio-Sensor with On-Chip DC Read-out in SiGe BiCMOS Technology
F.I. Jamal, S. Guha, M.H. Eissa, Ch. Meliani, H.J. Ng, D. Kissinger, J. Wessel
Proc. European Microwave Conference (EuMC 2016), 273 (2016)
(PlaqueCharM)
This paper presents the design of an integrated low-power K-band chem-bio-sensor in standard 0.13 μm SiGe BiCMOS technology incorporated with sensing and on-chip read-out circuitry together. The material under test (MUT) is exposed on an open-stub inside a Colpitts oscillator; the open-stub works as a capacitive sensor and the oscillator results in a permittivity dependent output frequency. The frequency information is translated into DC voltage using a frequency discriminator comprised of a delay line, a single transistor mixer and a low-pass filter. The sensor has been calibrated using iso-propanol and ethanol, the sensitivity is demonstrated using solutions of methanol-ethanol mixtures with concentration differences of 5 % around a mixture ratio of 50:50. It is 2.1 in sq. mm in size and it consumes 127 mW power. Along with low power consumption, this makes it a compact solution capable of performing minimal invasive investigations of chemicals and bio-materials.

(19) A 24 GHz Dielectric Sensor Based on Distributed Architecture
F.I. Jamal, S. Guha, M.H. Eissa, Ch. Meliani, D. Kissinger, J. Wessel
Proc. German Microwave Conference (GeMiC 2016), 173 (2016)
(PlaqueCharM)
In this paper, a dielectric sensor based on distributed architecture topology is presented. The measured sensor delivers the dielectric information as a notch frequency between 21 GHz to 25 GHz. The proposed sensor is intended to perform as a microwave dielectric sensor to identify bio-materials but can be used for other applications as well. It is fabricated in a standard 0.25 μm SiGe BiCMOS process with HBTs (fT /fmax = 120/140 GHz) and it consumes 13.4 mW DC power. The sensor has been simulated and measured with different dielectric materials. For proof of concept, first experiments have been conducted for air, epoxy resin and honey. Owing to the distributed concept and the destructive interference, a sensitivity of 0.32 GHz per unit permittivity (1.35% of the center frequency) was achieved. Based on these permittivity measurements, the presented results illustrate that this technique is a promising solution for biomaterial sensing and characterization.

(20) Comparison of Microstrip Stub Resonators for Dielectric Sensing in Low-Power K-band VCO
F.I. Jamal, S. Guha, M.H. Eissa, J. Borngräber, Ch. Meliani, D. Kissinger, J. Wessel
Proc. IEEE Topical Conference on Biomedical Wireless Technologies, Networks, and Sensing Systems (BioWireleSS 2016), 62 (2016)
(PlaqueCharM)
This paper presents the design and comparison of
three K-band sensing oscillators with a open-stub, shunt-stub
and both stub combined as the sensing elements respectively. The
input impedances of the stubs are functions of permittivities of the
medium on top of the stub, therefore, the oscillation frequencies
correspond to the dielectric media of the stubs. The chips were
fabricated in standard 0.25 um SiGe:C BiCMOS technology
and each has a size of 0.6 mm^2 and different volume fraction
of Methanol-Ethanol solution have been used as the material
under test (MUT). The open-stub has shown 2.5% of frequency
shift compared to 2% of shunt-stub and the combined with both
stub showed 4.3% of frequency shift from Ethanol to Methanol
as the MUT. This sensor is proposed as the future front-end
block as integrated solution for minimal invasive bio-materials
investigations with low power consumption.

(21) Multi-Gigabit Intra-Satellite Interconnects Employing Multi-Core Optical Engines and Fibers
M. Karppinen, P. Westbergh, A. Larsson, R. Safaisini, M. Ko, D. Kissinger, M. Sotom, L. Stampoulidis
Proc. International Conference on Space Optics (ICSO 2016), 269 (2016)
(MERLIN)

(22) Integration of 150 Gbps/Fiber Optical Engines Based on Multicore Fibers and 6-channel VCSELs and PDs
M. Karppinen, A. Tanskanen, V. Heikkinen, P. Myöhänen, N. Salminen, J. Ollila, O. Tapaninen, P. Westbergh, J. Gustavsson, A. Larsson, R. Safaisini, R. King, M. Ko, D. Kissinger, A.C. Ulusoy, T. Taunay, L. Bansal, L. Grüner-Nielsen, E. Kehayas, J. Edmunds, L. Stampoulidis
Proc. SPIE Optoelectronics and Photonics Conference (OPTO 2016), 9753, 97530S-1 (2016)
(MERLIN)

(23) Highly-Integrated Millimeter-Wave Radar Sensors for Autonomous Transportation
D. Kissinger, H.J. Ng
Proc. 11. Future Security 2016, 17 (2016)

(24) SiGe BiCMOS for Optoelectronics
D. Knoll, St. Lischke, A. Awny, L. Zimmermann
ECS Transactions 75(8), 121 (2016)
(RF2THzSiSoC)
Silicon-based electronic-photonic integrated circuit (ePIC) technology enables a high degree of integration of optoelectronic subsystems for optical communications. In this paper we give an overview about IHP’s work in ePIC technology development under use of different SiGe BiCMOS baseline processes. Focus is on “Photonic BiCMOS”, a new monolithic ePIC technology which combines high-performance BiCMOS technology with high-speed
photonic devices for electronic-photonic submodules for next generation communication networks. Main features of this technology are described, including an overview of offered
photonic and electronic devices. Examples of demonstrator circuits fabricated in the new technology are also presented. Another approach of merging photonics with electronics is hybrid assembly. In a second part of the paper we will demonstrate the potential of
SiGe BiCMOS as the ‘electronics supplier’ for this approach.

(25) SiGe BiCMOS for Optoelectronics
D. Knoll, St. Lischke, A. Awny, L. Zimmermann
ECS Transactions 75(8), 121 (2016)
(SPEED)
Silicon-based electronic-photonic integrated circuit (ePIC) technology enables a high degree of integration of optoelectronic subsystems for optical communications. In this paper we give an overview about IHP’s work in ePIC technology development under use of different SiGe BiCMOS baseline processes. Focus is on “Photonic BiCMOS”, a new monolithic ePIC technology which combines high-performance BiCMOS technology with high-speed
photonic devices for electronic-photonic submodules for next generation communication networks. Main features of this technology are described, including an overview of offered
photonic and electronic devices. Examples of demonstrator circuits fabricated in the new technology are also presented. Another approach of merging photonics with electronics is hybrid assembly. In a second part of the paper we will demonstrate the potential of
SiGe BiCMOS as the ‘electronics supplier’ for this approach.

(26) SiGe BiCMOS for Optoelectronics
D. Knoll, St. Lischke, A. Awny, L. Zimmermann
ECS Transactions 75(8), 121 (2016)
(SASER)
Silicon-based electronic-photonic integrated circuit (ePIC) technology enables a high degree of integration of optoelectronic subsystems for optical communications. In this paper we give an overview about IHP’s work in ePIC technology development under use of different SiGe BiCMOS baseline processes. Focus is on “Photonic BiCMOS”, a new monolithic ePIC technology which combines high-performance BiCMOS technology with high-speed
photonic devices for electronic-photonic submodules for next generation communication networks. Main features of this technology are described, including an overview of offered
photonic and electronic devices. Examples of demonstrator circuits fabricated in the new technology are also presented. Another approach of merging photonics with electronics is hybrid assembly. In a second part of the paper we will demonstrate the potential of
SiGe BiCMOS as the ‘electronics supplier’ for this approach.

(27) SiGe BiCMOS for Optoelectronics
D. Knoll, St. Lischke, A. Awny, L. Zimmermann
ECS Transactions 75(8), 121 (2016)
(MOSAIC)
Silicon-based electronic-photonic integrated circuit (ePIC) technology enables a high degree of integration of optoelectronic subsystems for optical communications. In this paper we give an overview about IHP’s work in ePIC technology development under use of different SiGe BiCMOS baseline processes. Focus is on “Photonic BiCMOS”, a new monolithic ePIC technology which combines high-performance BiCMOS technology with high-speed
photonic devices for electronic-photonic submodules for next generation communication networks. Main features of this technology are described, including an overview of offered
photonic and electronic devices. Examples of demonstrator circuits fabricated in the new technology are also presented. Another approach of merging photonics with electronics is hybrid assembly. In a second part of the paper we will demonstrate the potential of
SiGe BiCMOS as the ‘electronics supplier’ for this approach.

(28) 25-Gb/s/Channel VCSEL Driver and Transimpedance Amplifier Array ICs in 0.25-μm SiGe:C BiCMOS Technology for Space Applications
M. Ko, K. Tittelbach-Helmrich, V. Petrovic, D. Kissinger
Proc. 6th International Workshop on Analogue and Mixed-Signal Integrated Circuits for Space Applications (AMICSA 2016), 102 (2016)
(MERLIN)

(29) Monolithic Photonic-Electronic Linear Direct Detection Receiver for 56Gbps OOK
M. Kroh, A. Awny, G. Winzer, R. Nagulapalli, St. Lischke, D. Knoll, A. Peczek, D. Micusik, A.C. Ulusoy, D. Kissinger, L. Zimmermann, K. Petermann
Proc. 42nd European Conference on Optical Communication (ECOC 2016), 1157 (2016)
(SPEED)
A monolithic photonic-electronic direct detection single polarization linear receiver chip is presented. Electro-optical bandwidth and BER measurements reveal state-of-the-art performance of the integrated receiver.

(30) Monolithic Photonic-Electronic Linear Direct Detection Receiver for 56Gbps OOK
M. Kroh, A. Awny, G. Winzer, R. Nagulapalli, St. Lischke, D. Knoll, A. Peczek, D. Micusik, A.C. Ulusoy, D. Kissinger, L. Zimmermann, K. Petermann
Proc. 42nd European Conference on Optical Communication (ECOC 2016), 1157 (2016)
(SITOGA)
A monolithic photonic-electronic direct detection single polarization linear receiver chip is presented. Electro-optical bandwidth and BER measurements reveal state-of-the-art performance of the integrated receiver.

(31) Monolithic Photonic-Electronic Linear Direct Detection Receiver for 56Gbps OOK
M. Kroh, A. Awny, G. Winzer, R. Nagulapalli, St. Lischke, D. Knoll, A. Peczek, D. Micusik, A.C. Ulusoy, D. Kissinger, L. Zimmermann, K. Petermann
Proc. 42nd European Conference on Optical Communication (ECOC 2016), 1157 (2016)
(SFB787)
A monolithic photonic-electronic direct detection single polarization linear receiver chip is presented. Electro-optical bandwidth and BER measurements reveal state-of-the-art performance of the integrated receiver.

(32) Monolithic Photonic-Electronic Linear Direct Detection Receiver for 56Gbps OOK
M. Kroh, A. Awny, G. Winzer, R. Nagulapalli, St. Lischke, D. Knoll, A. Peczek, D. Micusik, A.C. Ulusoy, D. Kissinger, L. Zimmermann, K. Petermann
Proc. 42nd European Conference on Optical Communication (ECOC 2016), 1157 (2016)
(SASER)
A monolithic photonic-electronic direct detection single polarization linear receiver chip is presented. Electro-optical bandwidth and BER measurements reveal state-of-the-art performance of the integrated receiver.

(33) Monolithic Photonic-Electronic Linear Direct Detection Receiver for 56Gbps OOK
M. Kroh, A. Awny, G. Winzer, R. Nagulapalli, St. Lischke, D. Knoll, A. Peczek, D. Micusik, A.C. Ulusoy, D. Kissinger, L. Zimmermann, K. Petermann
Proc. 42nd European Conference on Optical Communication (ECOC 2016), 1157 (2016)
(BEACON)
A monolithic photonic-electronic direct detection single polarization linear receiver chip is presented. Electro-optical bandwidth and BER measurements reveal state-of-the-art performance of the integrated receiver.

(34) A Ka-Band BiCMOS LC-VCO with Wide Tuning Range and Low Phase Noise Using Switched Coupled Inductors
M. Kucharski, F. Herzel, H.J. Ng, D. Kissinger
Proc. European Microwave Integrated Circuits Conference (EuMIC 2016), (2016)
(Benchmarking Circuits/Radar Systems)
This paper presents a wideband and low phase noise
millimeter-wave (mm-wave) voltage-controlled oscillator (VCO)
fabricated in 130nm BiCMOS technology. The output signal
can sweep from 29.6 to 35.5 GHz, which corresponds to 18.1%
tuning range. The LC-tank of the VCO consists of two coupled
inductors and a binary weighted varactor bank. The secondary
inductor is terminated with a switch realized with heterojunction
bipolar transistor (HBT). Depending on the switch state, the
effective inductance of the LC-core can be changed which leads
to significant improvement of tuning range. It is shown that the
resistance of the switch in ON state can have a small effect on
the LC-tank quality factor Q if the switch is properly sized.
This results in a good phase noise performance over the whole
frequency range. The measured phase noise at 1MHz offset from
the carrier is better than -97 dBc/Hz, which results in a figure-ofmerit
of -180 dBc/Hz. The VCO dissipates 20mW and occupies
0.1mm2 chip area.

(35) Side-Use of a Ge p-i-n Photo Diode for Electrical Application in a Photonic BiCMOS Technology
St. Lischke, D. Knoll, S. Tolunay Wipf, Ch. Wipf, A. Fox, F. Herzel, M. Kaynak
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016), 126 (2016)
(BEACON)

(36) Side-Use of a Ge p-i-n Photo Diode for Electrical Application in a Photonic BiCMOS Technology
St. Lischke, D. Knoll, S. Tolunay Wipf, Ch. Wipf, A. Fox, F. Herzel, M. Kaynak
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016), 126 (2016)
(SPEED)

(37) Side-Use of a Ge p-i-n Photo Diode for Electrical Application in a Photonic BiCMOS Technology
St. Lischke, D. Knoll, S. Tolunay Wipf, Ch. Wipf, A. Fox, F. Herzel, M. Kaynak
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016), 126 (2016)
(DIMENSION)

(38) Side-Use of a Ge p-i-n Photo Diode for Electrical Application in a Photonic BiCMOS Technology
St. Lischke, D. Knoll, S. Tolunay Wipf, Ch. Wipf, A. Fox, F. Herzel, M. Kaynak
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016), 126 (2016)
(PHRESCO)

(39) Side-Use of a Ge p-i-n Photo Diode for Electrical Application in a Photonic BiCMOS Technology
St. Lischke, D. Knoll, S. Tolunay Wipf, Ch. Wipf, A. Fox, F. Herzel, M. Kaynak
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016), 126 (2016)
(SITOGA)

(40) LVDS : A Rad-Hard Octal 500 Mbps Bus LVDS Repeater for Space
J. Lopez, E. Cordero, M. Cirillo, R. Dittrich, A. Frouin, R. Jansen, D. Lopez
Proc. 6th International Workshop on Analogue and Mixed-Signal Integrated Circuits for Space Applications (AMICSA 2016), 142 (2016)
(MPW)

(41) An all-Transmission-Line 220 GHz Differential LNA in SiGe BiCMOS
Y. Mao, S. E, K. Schmalz, J.C. Scheytt
Proc. IEEE International Symposium on Radio-Frequency Integration Technology (RFIT 2016), (2016)
(DFG-AGS)

(42) A 4-32-GHz Chipset for a Highly Integrated Heterodyne Two-Port Vector Network Analyzer
J. Nehring, M. Dietz, K. Aufinger, G. Fischer, R. Weigel, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 64(3), 892 (2016)

(43) A 32 ppm/°C Temperature-Compensated Operational Amplifier for Application in Medical Device Tracking
M. Nenadovic, G. Fischer, N. Fiebig
Analog Integrated Circuits and Signal Processing 87, 117 (2016)
This paper presents a low-power, low-noise and high precision operational amplifier for a tracking system containing the intelligent medical device, and is an extended version of paper previously published by Nenadovic et al. in proc. of ICECS 2014. The accuracy of the tracking
system strongly depends on the accurate amplitude acquisition of the received signal. Therefore, an operational amplifier with precise gain control and effective temperature compensation has been designed and fabricated. The operational amplifier provides linear and temperature
independent signal amplification at frequencies between 0.2 and 20 kHz at a body temperature. The amplifier shows measured gain over temperature sensitivity as low as 32 ppm/°C in temperature range from 20 to 40 °C and consumes 300 µA from a supply voltage of 2.5 V. Furthermore, the measured gain over temperature sensitivity in the range from -40 to 130 °C is only 60 ppm/°C. Simulated linearity for signal amplitudes up to 10 mV is 0.4 % and the input-referred noise at 1 kHz is 32 nV/√Hz. An open-loop gain of 46 dB at 1 kHz and bandwidth-gain
product of 4.8 MHz is measured. The operational amplifier was designed in IHPs 250 nm SiGe BiCMOS technology and occupies an area of 0.2 mm2.

(44) Miniaturized 122 GHz System-on-Chip Radar Sensor with On-Chip Antennas Utilizing a Novel Antenna Design Approach
H.J. Ng, J. Wessel, D. Genschow, R. Wang, Y. Sun, D. Kissinger
Proc. IEEE MTT-S International Microwave Symposium (IMS 2016), (2016)
(HomiRadar)
This paper describes a highly-integrated 122-GHz system-on-chip radar sensor in a SiGe BiCMOS technology. The chip includes a radar transceiver and two on-chip antennas utilizing a novel antenna design approach that allows the use of the localized backside etching technique without compromising the mechanical stability of the chip. The implemented double folded-dipole antenna achieves an antenna gain of 6 dBi with a radiation efficiency of 54%. The transceiver is equipped with a 61-GHz VCO that is complemented with a frequency doubler to generate the transmit signal. The receive path includes an LNA, a 90 degree coupler, two passive subharmonic mixers and variable gain amplifiers. Radar measurements with static as well as moving targets were done to show the applicability of the developed system.

(45) Scalable Sensor Platform with Multi-Purpose Fully-Differential 61 and 122 GHz Transceivers for MIMO Radar Applications
H.J. Ng, M. Kucharski, D. Kissinger
Proc. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2016), 170 (2016)
(HomiRadar)
This paper describes a scalable sensor platform consisting of several multi-purpose 61 and 122 GHz transceivers that are designed in a fully-differential architecture and implemented in a Silicon-Germanium BiCMOS technology. The former transceiver achieves a higher transmit output power as well as receive gain and is meant for applications requiring a high dynamic range, while the latter transceiver allows a higher modulation bandwidth and is meant for high resolution applications. The transceivers include a frequency multiplier that generates the 61 and 122 GHz carrier signals from a single external 30.5 GHz LO signal that is also fed to an output buffer in the transceivers. The proposed architecture enables the cascading of multiple transceivers and allows thus the implementation of a MIMO radar system with 2 different frequency bands. The transceivers are equipped with BPSK modulators as well as an I/Q receiver and can be utilized as a base to build a very flexible software-defined radar platform.

(46) ASIC Implementation of Highly Reliable IR-UWB Transceiver for Industrial Automation
S. Olonbayar, G. Fischer, D. Kreiser, D. Martynenko, O. Klymenko, R. Kraemer, E. Grass
Frequenz: Journal of RF-Engineering and Telecommunications 70(7-8), 319 (2016)
(KUSZ)
An in-depth treatment of impulse an radio ultra-wideband (IR-UWB) wireless system is provided reviewing theoretical background, proceeding with detailed implementation procedure, and finally giving simulation and test results. This is the first research and prototyping work to be published in the field of IR-UWB that operates in the 6-8 GHz band. The aim of this work is to implement an IR-UWB wireless system for industrial automation that is robust and reliable. To achieve this, an analogue bandwidth of 250 MHz and digital baseband processing at the clock frequency 499.2 MHz were realized in a 250 nm BiCMOS process, integrating the complete system into a single chip. Simulation and measurement results confirm that the implemented IR-UWB transceiver is operational across four frequency channels in the band 6-8 GHz each supporting three data rates 850 kb/s, 6.81 Mb/s and 27.24 Mb/s.

(47) Monolithically Integrated High-Extinction-Ratio MZM with a Segmented Driver in Photonic BiCMOS
D. Petousi, L. Zimmermann, P. Rito, M. Kroh, D. Knoll, St. Lischke, R. Barth, Ch. Mai, I. Garcia-Lopez, A.C. Ulusoy, A. Peczek, G. Winzer, K. Voigt, K. Petermann
IEEE Photonics Technology Letters 28(24), 2866 (2016)

(48) Monolithic Photonic BiCMOS Sub-System Comprising MZM and Segmented Driver with 13 dB ER at 28 Gb/s
D. Petousi, L. Zimmermann, P. Rito, M. Kroh, D. Knoll, St. Lischke, Ch. Mai, I. Garcia Lopez, A.C. Ulusoy, G. Winzer, K. Voigt, Klaus Petermann
Proc. Conference on Lasers and Electro-Optics (CLEO), STu4G.3 (2016)
(BEACON)
In this work, a monolithically integrated Si depletion-type Mach-Zehnder modulator with linear segmented driver is demonstrated. Electro-optic time-domain measurements show extinction ratio more than 13 dB at 28 Gb/s with 700 mVpp.

(49) Monolithic Photonic BiCMOS Sub-System Comprising MZM and Segmented Driver with 13 dB ER at 28 Gb/s
D. Petousi, L. Zimmermann, P. Rito, M. Kroh, D. Knoll, St. Lischke, Ch. Mai, I. Garcia Lopez, A.C. Ulusoy, G. Winzer, K. Voigt, Klaus Petermann
Proc. Conference on Lasers and Electro-Optics (CLEO), STu4G.3 (2016)
(SITOGA)
In this work, a monolithically integrated Si depletion-type Mach-Zehnder modulator with linear segmented driver is demonstrated. Electro-optic time-domain measurements show extinction ratio more than 13 dB at 28 Gb/s with 700 mVpp.

(50) Monolithic Photonic BiCMOS Sub-System Comprising MZM and Segmented Driver with 13 dB ER at 28 Gb/s
D. Petousi, L. Zimmermann, P. Rito, M. Kroh, D. Knoll, St. Lischke, Ch. Mai, I. Garcia Lopez, A.C. Ulusoy, G. Winzer, K. Voigt, Klaus Petermann
Proc. Conference on Lasers and Electro-Optics (CLEO), STu4G.3 (2016)
(SPEED)
In this work, a monolithically integrated Si depletion-type Mach-Zehnder modulator with linear segmented driver is demonstrated. Electro-optic time-domain measurements show extinction ratio more than 13 dB at 28 Gb/s with 700 mVpp.

(51) Monolithic Photonic BiCMOS Sub-System Comprising MZM and Segmented Driver with 13 dB ER at 28 Gb/s
D. Petousi, L. Zimmermann, P. Rito, M. Kroh, D. Knoll, St. Lischke, Ch. Mai, I. Garcia Lopez, A.C. Ulusoy, G. Winzer, K. Voigt, Klaus Petermann
Proc. Conference on Lasers and Electro-Optics (CLEO), STu4G.3 (2016)
(SASER)
In this work, a monolithically integrated Si depletion-type Mach-Zehnder modulator with linear segmented driver is demonstrated. Electro-optic time-domain measurements show extinction ratio more than 13 dB at 28 Gb/s with 700 mVpp.

(52) Monolithic Photonic BiCMOS Sub-System Comprising MZM and Segmented Driver with 13 dB ER at 28 Gb/s
D. Petousi, L. Zimmermann, P. Rito, M. Kroh, D. Knoll, St. Lischke, Ch. Mai, I. Garcia Lopez, A.C. Ulusoy, G. Winzer, K. Voigt, Klaus Petermann
Proc. Conference on Lasers and Electro-Optics (CLEO), STu4G.3 (2016)
(SFB787)
In this work, a monolithically integrated Si depletion-type Mach-Zehnder modulator with linear segmented driver is demonstrated. Electro-optic time-domain measurements show extinction ratio more than 13 dB at 28 Gb/s with 700 mVpp.

(53) High-Speed Monolithically Integrated Silicon Photonic Transmitters in 0.25 μm BiCMOS Platform 
D. Petousi, I. Garcia Lopez, St. Lischke, D. Knoll, P. Rito, M. Kroh, Ch. Mai, A.C. Ulusoy, K. Voigt, L. Zimmermann, K. Petermann
Proc. European Conference on Optical Communication (ECOC 2016), 604 (2016)
(SITOGA)
Monolithically integrated transmitters in 0.25 μm photonic BiCMOS platform with two different driver approaches are discussed: a linear and a more power efficient topology featuring integrated 4-bit DAC. From the latter, PAM-4 eye diagrams up to 40 Gb/s are demonstrated.

(54) High-Speed Monolithically Integrated Silicon Photonic Transmitters in 0.25 μm BiCMOS Platform 
D. Petousi, I. Garcia Lopez, St. Lischke, D. Knoll, P. Rito, M. Kroh, Ch. Mai, A.C. Ulusoy, K. Voigt, L. Zimmermann, K. Petermann
Proc. European Conference on Optical Communication (ECOC 2016), 604 (2016)
(SFB787)
Monolithically integrated transmitters in 0.25 μm photonic BiCMOS platform with two different driver approaches are discussed: a linear and a more power efficient topology featuring integrated 4-bit DAC. From the latter, PAM-4 eye diagrams up to 40 Gb/s are demonstrated.

(55) High-Speed Monolithically Integrated Silicon Photonic Transmitters in 0.25 μm BiCMOS Platform 
D. Petousi, I. Garcia Lopez, St. Lischke, D. Knoll, P. Rito, M. Kroh, Ch. Mai, A.C. Ulusoy, K. Voigt, L. Zimmermann, K. Petermann
Proc. European Conference on Optical Communication (ECOC 2016), 604 (2016)
(SASER)
Monolithically integrated transmitters in 0.25 μm photonic BiCMOS platform with two different driver approaches are discussed: a linear and a more power efficient topology featuring integrated 4-bit DAC. From the latter, PAM-4 eye diagrams up to 40 Gb/s are demonstrated.

(56) High-Speed Monolithically Integrated Silicon Photonic Transmitters in 0.25 μm BiCMOS Platform 
D. Petousi, I. Garcia Lopez, St. Lischke, D. Knoll, P. Rito, M. Kroh, Ch. Mai, A.C. Ulusoy, K. Voigt, L. Zimmermann, K. Petermann
Proc. European Conference on Optical Communication (ECOC 2016), 604 (2016)
(SPEED)
Monolithically integrated transmitters in 0.25 μm photonic BiCMOS platform with two different driver approaches are discussed: a linear and a more power efficient topology featuring integrated 4-bit DAC. From the latter, PAM-4 eye diagrams up to 40 Gb/s are demonstrated.

(57) High-Speed Monolithically Integrated Silicon Photonic Transmitters in 0.25 μm BiCMOS Platform 
D. Petousi, I. Garcia Lopez, St. Lischke, D. Knoll, P. Rito, M. Kroh, Ch. Mai, A.C. Ulusoy, K. Voigt, L. Zimmermann, K. Petermann
Proc. European Conference on Optical Communication (ECOC 2016), 604 (2016)
(BEACON)
Monolithically integrated transmitters in 0.25 μm photonic BiCMOS platform with two different driver approaches are discussed: a linear and a more power efficient topology featuring integrated 4-bit DAC. From the latter, PAM-4 eye diagrams up to 40 Gb/s are demonstrated.

(58) A Monolithically Integrated Segmented Linear Driver and Modulator in EPIC 0.25 μm SiGe:C BiCMOS Platform
P. Rito, I. García López, D. Petousi, L. Zimmermann, M. Kroh, St. Lischke, D. Knoll, D. Micusik, A. Awny, A.C. Ulusoy, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 64(12), 4561 (2016)

(SPEED)
In this work, a monolithically integrated segmented linear driver and Mach-Zehnder modulator (MZM) is presented. The transmitter is fabricated in electronic-photonic integrated circuit (EPIC) 0.25μm SiGe:C BiCMOS technology, with fT/fmax=190 GHz. The driver and the modulator are divided into 16 segments and the MZM phase shifter has a total length of 6.08 mm. The segmented driver delivers a maximum of 4 Vpp differentially, featuring a gain of 13 dB and THD below 5%. Electro-optical time-domain measurements using PAM-4 modulation format are performed, demonstrating optical eye-diagrams up to 25 Gbaud. The electro-optical bandwidth of the transmitter is 18 GHz. The power dissipation of the driver is 1.5W, resulting in an energy per bit of 30 pJ/bit at 50 Gb/s. The reported optical transmitter demonstrates for the first time an implementation of a linear driver integrated with a MZM in a Si monolithic process.

(59) A Monolithically Integrated Segmented Linear Driver and Modulator in EPIC 0.25 μm SiGe:C BiCMOS Platform
P. Rito, I. García López, D. Petousi, L. Zimmermann, M. Kroh, St. Lischke, D. Knoll, D. Micusik, A. Awny, A.C. Ulusoy, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 64(12), 4561 (2016)

(SASER)
In this work, a monolithically integrated segmented linear driver and Mach-Zehnder modulator (MZM) is presented. The transmitter is fabricated in electronic-photonic integrated circuit (EPIC) 0.25μm SiGe:C BiCMOS technology, with fT/fmax=190 GHz. The driver and the modulator are divided into 16 segments and the MZM phase shifter has a total length of 6.08 mm. The segmented driver delivers a maximum of 4 Vpp differentially, featuring a gain of 13 dB and THD below 5%. Electro-optical time-domain measurements using PAM-4 modulation format are performed, demonstrating optical eye-diagrams up to 25 Gbaud. The electro-optical bandwidth of the transmitter is 18 GHz. The power dissipation of the driver is 1.5W, resulting in an energy per bit of 30 pJ/bit at 50 Gb/s. The reported optical transmitter demonstrates for the first time an implementation of a linear driver integrated with a MZM in a Si monolithic process.

(60) A Monolithically Integrated Segmented Driver and Modulator in 0.25 μm SiGe:C BiCMOS with 13 dB Extinction Ratio at 28 Gb/s
P. Rito, I. Garcia Lopez, D. Petousi, L. Zimmermann, M. Kroh, St. Lischke, D. Knoll, D. Kissinger, A.C. Ulusoy
Proc. IEEE MTT-S International Microwave Symposium (IMS 2016), (2016)
(SASER)
In this work, a monolithically integrated segmented driver and Mach-Zehnder modulator (MZM) in 0.25 μm SiGe:C BiCMOS technology is presented. The driver and the modulator are divided in 16 segments and the MZM has a total length of 6.08 mm. The driver has a maximum gain of 14.5 dB. Electro-optical time-domain measurements were performed and an optical eye-diagram with more than 13 dB of extinction ratio at 28 Gb/s is demonstrated. The driver dissipates a total of 2 W of DC power. To the best knowledge of the authors, the presented work shows the highest extinction ratio achieved at 28 Gb/s in silicon modulators.

(61) Gas Spectroscopy by Voltage-Frequency Tuning of a 245 GHz SiGe Transmitter and Receiver
N. Rothbart, K. Schmalz, J. Borngräber, D. Kissinger, H.-W. Hübers
IEEE Sensors Journal 16(24), 8863 (2016)
(DFG-AGS)
We report on a terahertz/millimeter-wave gas
spectroscopy sensor system based on a 245 GHz transmitter (TX)
and receiver (RX) fabricated in SiGe BiCMOS technology. The
frequency is tuned by applying external voltages to voltagecontrolled
oscillators of the TX and RX. Exemplary 2f spectra of
methanol are presented that exhibit a high SNR of up to 560 and
a short acquisition time as short as 39 s, respectively.

(62) Gas Spectroscopy by Voltage-Frequency Tuning of a 245 GHz SiGe Transmitter and Receiver
N. Rothbart, K. Schmalz, J. Borngräber, D. Kissinger, H.-W. Hübers
IEEE Sensors Journal 16(24), 8863 (2016)
(Aeternitas)
We report on a terahertz/millimeter-wave gas
spectroscopy sensor system based on a 245 GHz transmitter (TX)
and receiver (RX) fabricated in SiGe BiCMOS technology. The
frequency is tuned by applying external voltages to voltagecontrolled
oscillators of the TX and RX. Exemplary 2f spectra of
methanol are presented that exhibit a high SNR of up to 560 and
a short acquisition time as short as 39 s, respectively.

(63) A Compact Gas Spectroscopy Sensor System Based on a Voltage-Frequency-Tuned 245 GHz SiGe Transmitter and Receiver
N. Rothbart, K. Schmalz, J. Borngräber, D. Kissinger, H.-W. Hübers
Proc. International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2016), (2016)
(DFG-AGS)

(64) 245 GHz Transmitter Array in SiGe BiCMOS for Gas Spectroscopy
K. Schmalz, J. Borngräber, W. Debski, M. Elkhouly, R. Wang, P. Neumaier, D. Kissinger, H.-W. Hübers
IEEE Transactions on Terahertz Science and Technology 6(2), 318 (2016)
(AvantSolar)
A 245 GHz transmitter (TX) array with an integrated antenna-array for a gas spectroscopy
system has been realized, which consists of a push-push VCO with a 1/64 frequency divider,
power amplifiers, frequency doublers, and on-chip antennas with localized backside etching.
The TX-frequency is tunable in the range from 238 GHz to 252 GHz. The TX-array has been
fabricated in a 0.13 μm SiGe:C BiCMOS technology with fT/fmax of 300GHz/500GHz. Its
estimated output power is 7 dBm at 245 GHz, and the EIRP reaches 18 dBm at 245 GHz. The
spectroscopy system includes a TX and a receiver (RX) in SiGe BiCMOS, and a gas
absorption cell. The sensitivity of this spectroscopy system is demonstrated by measuring the
high-resolution absorption spectrum of gaseous methanol (CH3OH) and is increased further
by the TX-array.

(65) 245 GHz Transmitter Array in SiGe BiCMOS for Gas Spectroscopy
K. Schmalz, J. Borngräber, W. Debski, M. Elkhouly, R. Wang, P. Neumaier, D. Kissinger, H.-W. Hübers
IEEE Transactions on Terahertz Science and Technology 6(2), 318 (2016)
(Telediagnostics)
A 245 GHz transmitter (TX) array with an integrated antenna-array for a gas spectroscopy
system has been realized, which consists of a push-push VCO with a 1/64 frequency divider,
power amplifiers, frequency doublers, and on-chip antennas with localized backside etching.
The TX-frequency is tunable in the range from 238 GHz to 252 GHz. The TX-array has been
fabricated in a 0.13 μm SiGe:C BiCMOS technology with fT/fmax of 300GHz/500GHz. Its
estimated output power is 7 dBm at 245 GHz, and the EIRP reaches 18 dBm at 245 GHz. The
spectroscopy system includes a TX and a receiver (RX) in SiGe BiCMOS, and a gas
absorption cell. The sensitivity of this spectroscopy system is demonstrated by measuring the
high-resolution absorption spectrum of gaseous methanol (CH3OH) and is increased further
by the TX-array.

(66) Gas Spectroscopy with 245 GHz Circuits in SiGeBiCMOS and Frac-N PLL for Frequency Ramps
K. Schmalz, J. Borngräber, S.B. Yilmaz, N. Rothbart, D. Kissinger, H-W. Hübers
Proc. IEEE SENSORS 2016, (2016)
(DFG-AGS)
A compact gas spectroscopy system is presented, which contains a 245 GHz transmitter (TX) and a subharmonic receiver (RX) in SiGe BiCMOS technology, as well as a gas absorption cell. The local oscillators (LOs) of the RX and the TX are controlled by two external Fractional-N phase-locked loops (Frac-N PLLs) allowing fast frequency ramps with superimposed frequency shift keying (FSK) or analog frequency modulation. The sensitivity of this spectroscopic system is evaluated by measuring the high-resolution absorption spectrum of gaseous methanol (CH3OH). Spectra of CH3OH are shown for the range 241 – 242 GHz, which exhibit a high signal-to-noise ratio (SNR).

(67) Gas Spectroscopy with 245 GHz Circuits in SiGeBiCMOS and Frac-N PLL for Frequency Ramps
K. Schmalz, J. Borngräber, S.B. Yilmaz, N. Rothbart, D. Kissinger, H-W. Hübers
Proc. IEEE SENSORS 2016, (2016)
(Aeternitas)
A compact gas spectroscopy system is presented, which contains a 245 GHz transmitter (TX) and a subharmonic receiver (RX) in SiGe BiCMOS technology, as well as a gas absorption cell. The local oscillators (LOs) of the RX and the TX are controlled by two external Fractional-N phase-locked loops (Frac-N PLLs) allowing fast frequency ramps with superimposed frequency shift keying (FSK) or analog frequency modulation. The sensitivity of this spectroscopic system is evaluated by measuring the high-resolution absorption spectrum of gaseous methanol (CH3OH). Spectra of CH3OH are shown for the range 241 – 242 GHz, which exhibit a high signal-to-noise ratio (SNR).

(68) Gas Spectroscopy System at 245 and 500 GHz usingTransmitters and Receivers in SiGe BiCMOS
K. Schmalz, J. Borngräber, P. Neumaier, N. Rothbart, D. Kissinger, H.-W. Hübers
Proc. 7th ESA Workshop on Millimetre-Wave Technology and Applications, 20 (2016)

(69) Sensor System in SiGe BiCMOS at 245 and 500 GHz for Gas Spectroscopy
K. Schmalz, J. Borngräber, P. Neumaier, H.-W. Hübers, D. Kissinger
Proc. 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2016), 70 (2016)

(Telediagnostics)

(70) Evaluation of a Reflection Based Dehydration Sensing Method for Wristwatch Integration
F. Trenz, R. Weigel, D. Kissinger
Proc. International Conference on Microwave, Radar and Wireless Communications (MIKON 2016), (2016)

(71) Packaging of a BiCMOS Sensor on a Catheter Tip for the Characterisation of Atherosclerotic Plaque
D. Wagner, F.I. Jamal, S. Guha, Ch. Wenger, J. Wessel, D. Kissinger, D. Ernst, K. Pitschmann, B. Schmidt, M. Detert
Proc. 6th Electronics System-Integration Technology Conference (ESTC 2016), (2016)
(PlaqueCharM)

(72) Application of Microwave Sensor Technology in Cardiovascular Disease for Plaque Detection
D. Wagner, S. Vogt, F.I. Jamal, S. Guha, Ch. Wenger, J. Wessel, D. Kissinger, K. Pitschmann, U. Schumann, B. Schmidt, M. Detert
Biomedical Engineering / Zeitschrift für Biomedizinische Technik 2(1), 273 (2016)
(PlaqueCharM)
Arteriosclerosis and associated cardiovascular disease remains the leading cause of mortality. Improved methods for vascular plaque detection allow early diagnose and better therapeutic options. Present diagnostic tools require intense technical expenditure and diminish value of modern screening methods. Our group developed an microwave sensor for on-site detection of plaque formation in arterial vessels. The sensor is an oscillator working
around 27 GHz which is coupled to a microstrip stub line. The final flexible polyimid interposer has a length of 38 cm, a width of 1.2 mm and a thickness of 200 μm. Because of its minimal size the interposer completed a catheter with a diameter of 8F ready for further clinical use
in cardiology and heart surgery.

(73) Oxygen Detection System Consisting of a Millimeter Wave Fabry-Pérot Resonator and an Integrated SiGe Front-End
J. Wecker, A. Bauch, S. Kurth, G. Mangalgiri, M. Gaitzsch, M. Meinig, T. Gessner, I. Nasr, R. Weigel, D. Kissinger, A. Hackner, U. Prechtel
Proc. SPIE Optoelectronics and Photonics Conference (OPTO), 9747, 97470C-1 (2016)

(74) Silicon-Germanium RF-Frontends for Terahertz Radar Imaging and Gas Spectroscopy
W. Winkler, K. Schmalz
Proc. 7th International Workshop on Terahertz Technology and Applications (THz 2016), (2016)
(DFG-AGS)

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.