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  • Publikationen 2020

Publikationen 2020

seit Januar 2020

(1) Millimeter-Wave Single-Layer Full-Band WR12 Vertical Waveguide Transition
W. Ahmad, D. Kissinger, H.J. Ng
Proc. IEEE Radio and Wireless Symposium (RWS 2020), 298 (2020)

(2) Modular Scalable 80- and 160-GHz Radar Sensor Platform for Different Radar Techniques and Applications
W. Ahmad, M. Kucharski, A. Ergintav, D. Kissinger, H.J. Ng
IEEE MTT-S International Microwave Symposium (IMS 2020), 1275 (2020)

(3) Modular Scalable 80- and 160-GHz Radar Sensor Platform for Different Radar Techniques and Applications
W. Ahmad, M. Kucharski, A. Ergintav, D. Kissinger, H.J. Ng
IEEE MTT-S International Microwave Symposium (IMS 2020), 1275 (2020)

(4) 90 GHz Bandwidth Single-Ended PA for D-Band Applications in BiCMOS Technology
A. Ali, J. Yun, H.J. Ng, D. Kissinger, F. Giannini, P. Colantonio
Proc. 4th Australian Microwave Symposium (AMS 2020), (2020)
DOI: 10.1109/AMS48904.2020.9059473

(5) 220–360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology
A. Ali, J. Yun, M. Kucharski, H.J. Ng, D. Kissinger, P. Colantonio
IEEE Transactions on Microwave Theory and Techniques 68(7), 2701 (2020)
DOI: 10.1109/TMTT.2020.2988869
This article presents two broadband frequency multiplier chains (FMCs) fabricated with a standard 130-nm SiGe BiCMOS process. In both solutions, a broadband push-push frequency doubler (x2) operating at 220–360 GHz was employed. In order to properly drive such a doubler, with sufficient input power and bandwidth, two different power amplifiers (PAs) have been adopted: the former is based on a cascode configuration and the latter is based on a stacked topology. In addition, a D-band frequency quadrupler (x4) has been integrated before the PAs and doubler, to complete the design of frequency eighth tupler (x8) chains. The first FMC with the cascode PA achieves peak output power of 2.3 dBm, with maximum conversion gain (GC) and bandwidth of 15 dB and 127 GHz, respectively. The second FMC with the stacked PA delivers a saturated output power of 2.5 dBm, with a maximum GC and a bandwidth of 12 dB and 72 GHz, respectively. The two FMCs consume maximum dc power of 0.537 and 0.542 W. The complete design procedure of the FMCs is presented in this article. To the best of our knowledge, the reported bandwidth is state-of-the-art and widest among SiGe based FMCs.

(6) 100 Gbps 0.8-M Wireless Link based on Fully Integrated 240 GHz IQ Transmitter and Receiver
M.H. Eissa, N. Maletic, E. Grass, R. Kraemer, D. Kissinger, A. Malignaggi
Proc. IEEE MTT-S International Microwave Symposium (IMS 2020), 627 (2020)

(7) Frequency Interleaving IF Transmitter and Receiver for 240-GHz Communication in SiGe:C BiCMOS
M.H. Eissa, N. Maletic, L. Lopacinski, A. Malignaggi, G. Panic, R. Kraemer, G. Fischer, D. Kissinger
IEEE Transactions on Microwave Theory and Techniques 68(1), 239 (2020)
DOI: 10.1109/TMTT.2019.2940018, (fast spot)
This work presents fully-integrated modular wideband frequency interleaving (FI) transmitter and receiver for high data rate communication applications. At the transmitter side three independent I/Q baseband channels are up-converted to different intermediate frequencies (IF) and then interleaved. At the receiver side the interleaved signals are down-converted and separated back to each independent channel. Single-ended inputs and outputs are utilized in order to reduce the pin count, for a more practical realization and higher potential toward future system scaling. Special design techniques are followed to minimize cross-talk and inter-modulation products between the channels. All circuits are manufactured and measured in a 130nm SiGe:C BiCMOS technology with fT / fmax = 300 / 500 GHz. The FI transmitter achieves a channel bandwidth of 2.5 GHz with less than 3 dB difference across the different channels till 15 GHz IF. It consumes 560mW from 2.5V and 3.3V supplies, and occupies a silicon area of 1.9mm2. The FI receiver achieves a baseband channel bandwidth of 2.5GHz with a 1 dB difference between the channels till the same IF. It consumes 890mW from 2.5V and 3.3V supplies, and has a chip area of 1.55mm2. The circuits are deployed in a communication experiment, firstly in a back-to-back test with direct cable connection, demonstrating a data rate of 15.6 Gb/s across the three IQ channels with a 16- QAM modulation scheme and worst case transmitter-to-receiver (Tx-to-Rx) error vector magnitude (EVM) of -18.6 dB. Then a wireless experiment is performed with a 240 GHz front-end with on-chip antenna, demonstrating a data rate of 7.8 Gb/s with QPSK modulation and worst case EVM of -8.3 dB across a wireless link of 15 cm. To the best of the authors’ knowledge this is the first work that demonstrates a wireless transmission at sub-THz carrier frequencies utilizing frequency interleaving architectures.

(8) A V-Band Bidirectional Amplifier-Module for Hybrid Phased-Array Systems in BiCMOS Technology
A. Gadallah, M.H. Eissa, D. Kissinger, A. Malignaggi
Proc. IEEE Radio and Wireless Week (RWW 2020), 330 (2020)

(9) An Advanced Audio System for Stereo Reproduction Enhancement
A.D. Giliberti, F. Iseini, N. Pelagalli, A. Terenzi, S. Cecchi
Proc. 148th AES Convention 2020, 1 (2020)

(10) Broadband 110 - 170 GHz True Time Delay Circuit in a 130-nm SiGe BiCMOS Technology
A. Karakuzulu, M.H. Eissa, D. Kissinger, A. Malignaggi
Proc. IEEE MTT-S International Microwave Symposium (IMS 2020), 775 (2020)

(11) Ridge Gap Waveguide Based Liquid Crystal Phase Shifter
M. Nickel, A. Jimenez-Saez, P. Agrawal, A. Gadallah, A. Malignaggi, C. Schuster, R. Reese, H. Tesmer, E. Polat, D. Wang, P. Schumacher, R. Jakoby, D. Kissinger, H. Manue
IEEE Access 8, 77833 (2020)
In this paper, the gap waveguide technology is examined for packaging liquid crystal (LC) in tunable microwave devices. For this purpose, a line based passive phase shifter is designed and implemented in a ridge gap waveguide (RGW) topology and filled with LC serving as a functional material. The inherent direct current (DC) decoupling property of gap waveguides is used to utilize the waveguide surroundings as biasing electrodes for tuning the LC. The bed of nails structure of the RGW exhibits an E-field suppression of 76 dB in simulation, forming a completely shielded device. The phase shifter shows a maximum figure of merit (FoM) of 70°/dB from 20 GHz to 30 GHz with a differential phase shift of 387° at 25 GHz. The insertion loss ranges from 3.5 dB to 5.5 dB depending on the applied biasing voltage of 0V to 60 V.

(12) Modular Baseband Processing for mm-Wave and THz Communication
G. Panic, M.H. Eissa, L. Lopacinski, N. Maletic, R. Kraemer
Proc. 8th Small Systems Simulation Symposium (SSSS 2020), 49 (2020)

(13) A Compact, Low-Power and Constant Output Power 330 GHz Voltage-Controlled Oscillator in 130-nm SiGe BiCMOS
L. Pantoli, H. Bello, H.J. Ng, D. Kissinger, G. Leuzzi
International Journal of Infrared and Millimeter Waves (2020)
DOI: 10.1007/s10762-020-00712-3
Nowadays, terahertz and sub-terahertz frequencies are experiencing a significant interest from both academic and industrial world, since they offer a wide and unused spectrum available for different applications, as high-throughput communications, efficient imaging systems and medical uses. In this work an innovative sub-THz voltage-controlled oscillator (VCO) realized with a 130-nm SiGe process is proposed and described in detail. The technology is the SG13G2 bipolar-complementary-metal-oxide-semiconductor (BiCMOS) provided by IHP foundry. The signal source is conceived for high-resolution THz imaging camera; at design level it has been defined with a push-push architecture and adopts an oscillator core based on a Colpitts topology. State-of-the-art performance has been obtained thanks to the proposed design choices that are uncommon at these frequencies, as for instance, the VCO output taken from the common base node, the use of varactors in anti-series connection and the possibility to define a double output at different harmonic frequencies. These, as well as other innovative expedients, allow to simplify the integration at system level and to achieve compact sizes, very low power consumption and almost constant output power level over the full tuning bandwidth. A relative tuning range of about 5.5% has been obtained around a central frequency of 330 GHz, while the output power is about − 8 dBm with a maximum variation of 0.4 dB. Also the phase noise of − 110 dBc/Hz at 10 MHz offset is very promising. Measurements over different chip samples demonstrate the robustness of the proposed solution and the reliability of the design.

(14) A Compact Circular Multipass Cell for Millimeter-Wave/Terahertz Gas Spectroscopy
N. Rothbart, K. Schmalz, H.-W. Hübers
IEEE Transactions on Terahertz Science and Technology 10(1), 9 (2020)
DOI: 10.1109/TTHZ.2019.2950123, (DFG-AGS)
Millimeter-wave/Terahertz (mmW/THz) spectroscopy is a promising tool for gas sensing applications, such as breath analysis or the detection of toxic chemicals, which require compact portable systems. Long gas cells that are needed for high sensitivities are often bulky and limit the portability of the system. We present a compact mmW/THz circular multipass gas cell with an optical path length of 1.9 m and an outer diameter of only 21.5 cm. The beam is refocused at each internal reflection as a consequence of the large divergence of the mmW/THz beams. We determined the losses of the cell to about 3 dB around 250 GHz and demonstrated sensitive gas spectroscopy with a detection limit of 14 ppm/√Hz for acetaldehyde in a mixture with methanol.

(15) Fault Tolerant Platform for Communication and Distance Measurement in Highly Automated Driving
R.T. Syed, M. Ulbricht, W.A. Ahmad, H.J. Ng, V. Sark, R. Hasan, M. Krstic
Proc. 8th International Conference on Cyber-Physical Systems and Internet-of-Things (CPS & IoT 2020), 673 (2020)

(16) An Integrated Bistatic 4TX/4RX Six-Port MIMO-Transceiver at 60 GHz in a 130-nm SiGe BiCMOS Technology for Radar Applications
M. Voelkel, S. Pechmann, H.J. Ng, D. Kissinger, R. Weigel, A. Hagelauer
Proc. IEEE MTT-S International Microwave Symposium (IMS 2020), 1219 (2020)

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