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Embedded RRAM

Embedded non-volatile memories for wireless sensor networks (WSN), space applications and automotive electronics


Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM). The switching effect of RRAM devices is caused by chemical redox-reactions, therefore, radiation effects like total ionizing dose and single event effects do not affect the switching mechanism. The intrinsic radiation tolerance of RRAM significantly reduces sensitivity to radiation-induced bit upsets. Nevertheless, the 1T1R structure of the memory array consists of NMOS access transistors, which are sensitive to radiation. In standard NMOS devices, ionizing radiation may generate holes trapped in the gate oxide, and the trapped holes could induce leakage paths from the drain to source region. A suitable approach to eliminate the leakage path in NMOS transistors is to adopt a gate-enclosed layout.

Beitrag des IHP

IHP’s research activities on RRAM mainly focus on developing memory arrays for microcontrollers (μC) for wireless sensor networks (WSN) and for automotive electronics as well as on investigating the atomic-scale physical/chemical mechanism of the resistive switching behavior.


DFG Finanzierung unter der Projektnummer SCHR 1123 / 7-1.

ENIAC Joint Undertaking 2013-2, PANACHE No. 621217.Eurpean Union’s H2020 research and innovation program under grant agreement No 640073.


ST Microelectronics, Frankreich

ASM Europe, Niederlande

Robert Bosch GmbH, Deutschland

TU Darmstadt, Deutschland

Universitá degli Studi di Ferrara, Italien

Università della Calabria, Italien

REDCAT Devices, Italien

Jyvaskylan Yliopisto, Finnland

Universitat Autònoma de Barcelona, Spanien

Deutsches Elektronen-Synchrotron DESY, Deutschland

Slovak Academy of Science, Slowakei

Ausgewählte Publikationen

P. Calka et al., ACS Applied Materials & Interfaces, 6, 5056-5060, 2014.

S. U. Sharath et al., Appl. Phys. Lett., 104, 063502, 2014.

T. Bertaud et al., Appl. Phys. Lett. Vol. 101, 143501, 2012.

M. Sowinska et al., Appl. Phys. Lett. 100, 233509, 2012.

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.