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GaP for THz

Future work is focused on achieving improved 2D GaP layer growth conditions in order to prepare truly pseudomorphic GaP/Si0.8Ge0.2/Si(001) heterostructures with low defect densities and layer roughness. Therefore, further GaP deposition process developments by GSMBE and MOCVD systems are currently under way with our partners at Humboldt-University Berlin and Helmholtz-Centre for Material and Energy Berlin. As one part of these studies, we will investigate (selective) GaP growth in local HBT Si0.8Ge0.2/Si(001) mesa structures. Furthermore, electronic and electric investigations (band offsets, transport properties etc.) for GaP/Si0.8Ge0.2/Si(001) heterostacks at HBT model structures will be performed.

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.