Resistive RAMs based bio-inspired electronics
Neuromorphic devices
Zielstellung
Bio-inspired electronics emulating neuronal synaptic connections is a novel technique for future low power analog signal processing and more. Integrating such bio-inspired electronics on CMOS/BiCMOS platform enables fabrication and analysis of an array of such devices. HfO2 based resistive RAM devices together with IHP’s SiGe BiCMOS platform will be effectively used for designing such neuromorphic devices.
Beitrag des IHP
Investigating the multilevel switching property of HfO2 based resistive memory and subsequent circuit design for neuromorphic applications is done by IHP. IHP’s material research department has developed the switching physics of HfO2 based resistive memory devices.
Finanzierung
DFG finanziert durch das Projekt SCHR1123/7-1 sowie intern durch das IHP.
Projektpartner
TU Darmstadt, Germany
Universià degli Studi di Ferrara, Italy
Universitat Autonoma de Barcelona, Spain
Ausgewählte Publikationen
G. Niu et al., Scientific Reports, accepted for publications (2016).
A. Grossi et al., Solid-State Electronics, 115 A, 17-25 (2015).
A. Grossi et al., IEEE Transacrions on Electron Devices, 62, 2502 (2015).
H.-D. Kim et al., Journal of Vacuum Science and technology B 33, 052204 (2015).
C. Zambelli, Proc. IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 327 (2015).
A. Grossi et al., Proc. 7th International Memory Workshop (IMW), 93, (2015).
A. Grossi et al., IEEE international Conference on Memristive Systems (MEMRISYS), (2015).
P. Calka et al., ACS Applied Materials and Interfaces, 6, 5056-5060(2014).
