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  • Characterization techniques

Strain engineered Ge micro- and nanostructures

A variety of characterization techniques employed by IHP´s material scientists within the project can be divided into laboratory-based equipment and 3rd generation Synchrotron radiation facilities.

 

Laboratory based equipment at IHP – Microelectronics

X-ray diffraction is certainly of special importance for the structural characterization of the prepared Ge/Si heterostructures. Here, the Smart Lab diffractometer from Rigaku presented in Fig. 1 is used. With a highly flexible diffractometer set-up, it offers suitable geometries for carrying out a wide range of studies (grazing incidence X-ray diffraction mode, pole figure studies, reciprocal space mapping for defect studies by diffuse X-ray scattering  etc).

 

Raman spectroscopy is one of the most common methods to study the fundamental properties of semiconductors and is widely used in Si microelectronics. The InVia Renishaw spectrometer (Fig. 2) offers the opportunity of in-depth semiconductor investigations using laser wavelengths in the range of 325 – 364 nm (UV) and 457 – 633 nm (visible). Micro-Raman setups with high spatial resolution for Raman mapping studies are also feasible; furthermore, temperature cells and polarization filters allow for further detailed materials science studies.

 

µ-Photoluminescence and µ-Electroluminescence are the techniques of choice to investigate the optical properties of materials and optoelectronic devices. The experimental tool in Fig.3 is equipped with a microscope and motorized stage enabling measurements with a spatial resolution of ~1µm. The sample temperature can be controlled in the 77-900 K. The system is equipped with a green (532 nm) and an infrared laser (1064 nm) and with several single- and multi-channel detectors, resulting in a very broad spectral responsivity, from 500 nm to 5.5 µm. Standard µ-manipulator scan be used to electrically contact devices without the need of wire bonding.

Third Generation Synchrotron Radiation Facilities in Europe

A core competence of IHP materials scientist is the use of 3rd generation Synchrotron radiation (SR) facilities. Due to the brilliance of SR beams, materials science studies at SR facilities provide unprecedented insights in materials on the nano-scale. Fig. 4 shows a top view on the European Synchrotron Radiation Facility (ESRF) in Grenoble (France). For further details, please consult the internet page: http://www.esrf.eu

Fig. 1: Smart Lab diffractometer from Rigaku for versatile X-ray diffraction studies.

Fig. 3: The µPL-µEL set-up.

Fig. 2: InVia Renishaw spectrometer for micro-Raman studies.

Fig. 4: European Synchrotron Radiation Facility (ESRF) in Grenoble (France).

Das Gebäude und die Infrastruktur des IHP wurden finanziert vom Europäischen Fonds für regionale Entwicklung, von der Bundesregierung und vom Land Brandenburg.