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Strain engineered Ge micro- and nanostructures

Strain engineered micro- and nanostructures on patterned wafers


Silicon (Si), dominating the platform for integrated circuitry (IC) technologies over the last 60 years, is running into fundamental physical limits with further miniaturization (“More Moore”) and / or functionalization (“More than Moore”). In this respect, new material candidates must be identified to enable new innovative functions without compromising the high performance of the Si chip baseline technology. One such potential candidate is Germanium (Ge) experiencing a renaissance in modern microelectronics due to its superior optoelectronic properties with respect to Si (band gap, charge carrier mobility etc.). In consequence, Ge is a promising material for building up active photonic modules (detectors, modulators and lasers) within i.e. the “More than Moore” approach to set up true electronic – photonic integrated circuits (EPICs) [1-3]. Despite clear advantages of Ge integration in Si technology (i.e. diamond crystal structure and Si CMOS compatibility), true integration challenges need to be overcome to enable high performing optoelectronic Ge modules within Si ICs.

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